DE69531141D1 - Einseitige Zweitorspeicherzelle - Google Patents

Einseitige Zweitorspeicherzelle

Info

Publication number
DE69531141D1
DE69531141D1 DE69531141T DE69531141T DE69531141D1 DE 69531141 D1 DE69531141 D1 DE 69531141D1 DE 69531141 T DE69531141 T DE 69531141T DE 69531141 T DE69531141 T DE 69531141T DE 69531141 D1 DE69531141 D1 DE 69531141D1
Authority
DE
Germany
Prior art keywords
sided
memory cell
port memory
port
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69531141T
Other languages
English (en)
Other versions
DE69531141T2 (de
Inventor
Andrew L Hawkins
Stefan P Sywyk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cypress Semiconductor Corp
Original Assignee
Cypress Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cypress Semiconductor Corp filed Critical Cypress Semiconductor Corp
Application granted granted Critical
Publication of DE69531141D1 publication Critical patent/DE69531141D1/de
Publication of DE69531141T2 publication Critical patent/DE69531141T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
DE69531141T 1994-12-22 1995-11-22 Einseitige Zweitorspeicherzelle Expired - Fee Related DE69531141T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36363794A 1994-12-22 1994-12-22
US363637 1994-12-22

Publications (2)

Publication Number Publication Date
DE69531141D1 true DE69531141D1 (de) 2003-07-31
DE69531141T2 DE69531141T2 (de) 2004-04-29

Family

ID=23431048

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69531141T Expired - Fee Related DE69531141T2 (de) 1994-12-22 1995-11-22 Einseitige Zweitorspeicherzelle

Country Status (4)

Country Link
US (2) US6005795A (de)
EP (1) EP0718847B1 (de)
JP (1) JPH0922987A (de)
DE (1) DE69531141T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69727939D1 (de) 1997-11-28 2004-04-08 St Microelectronics Srl RAM-Speicherzelle mit niedriger Leistungsaufnahme und einer einzigen Bitleitung
JP2000232168A (ja) * 1999-02-10 2000-08-22 Sony Corp 半導体記憶装置
US6388939B1 (en) * 1999-09-30 2002-05-14 Cypress Semiconductor Corp. Dual port sram
TW484117B (en) 1999-11-08 2002-04-21 Semiconductor Energy Lab Electronic device
JP5420582B2 (ja) * 2000-05-16 2014-02-19 ルネサスエレクトロニクス株式会社 半導体装置
US6556471B2 (en) * 2001-06-27 2003-04-29 Intel Corporation VDD modulated SRAM for highly scaled, high performance cache
KR100460141B1 (ko) * 2002-07-08 2004-12-03 삼성전자주식회사 듀얼 포트 정적 메모리 셀 및 이 셀을 구비한 반도체메모리 장치
US7738496B1 (en) 2002-12-31 2010-06-15 Cypress Semiconductor Corporation Device that provides the functionality of dual-ported memory using single-ported memory for multiple clock domains
KR100539229B1 (ko) * 2003-01-30 2005-12-27 삼성전자주식회사 듀얼 포트 반도체 메모리 장치
US20040257856A1 (en) * 2003-06-23 2004-12-23 Texas Instruments Incorporated Dual-port functionality for a single-port cell memory device
US6845059B1 (en) * 2003-06-26 2005-01-18 International Business Machines Corporation High performance gain cell architecture
US7870334B2 (en) * 2003-11-12 2011-01-11 International Business Machines Corporation Distributed task queues in a multiple-port storage system
US7113445B1 (en) 2003-09-26 2006-09-26 Cypress Semiconductor Corporation Multi-port memory cell and access method
US7934057B1 (en) 2003-12-24 2011-04-26 Cypress Semiconductor Corporation Logic for implementing a dual clock domain read access with predictable timing for bi-directional inputs/outputs
US7042792B2 (en) * 2004-01-14 2006-05-09 Integrated Device Technology, Inc. Multi-port memory cells for use in FIFO applications that support data transfers between cache and supplemental memory arrays
US7962698B1 (en) 2005-10-03 2011-06-14 Cypress Semiconductor Corporation Deterministic collision detection
JP4984828B2 (ja) * 2006-10-31 2012-07-25 株式会社デンソー 半導体メモリ回路装置
US8589632B1 (en) 2007-03-09 2013-11-19 Cypress Semiconductor Corporation Arbitration method for programmable multiple clock domain bi-directional interface
US8145809B1 (en) 2007-03-09 2012-03-27 Cypress Semiconductor Corporation Busy detection logic for asynchronous communication port
US8153985B2 (en) * 2009-01-30 2012-04-10 Honeywell International Inc. Neutron detector cell efficiency
US8339893B2 (en) * 2009-09-25 2012-12-25 International Business Machines Corporation Dual beta ratio SRAM
TWI518684B (en) * 2014-10-16 2016-01-21 6t sram cell

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55101185A (en) * 1979-01-29 1980-08-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor memory device
US5428574A (en) * 1988-12-05 1995-06-27 Motorola, Inc. Static RAM with test features
DE68922738T2 (de) * 1989-12-23 1996-01-25 Ibm Hochintegrierter Halbleiterspeicher mit Mehrfachzugang.
US5289432A (en) * 1991-04-24 1994-02-22 International Business Machines Corporation Dual-port static random access memory cell
JPH05151778A (ja) * 1991-06-05 1993-06-18 Mitsubishi Electric Corp スタテイツクランダムアクセスメモリおよびその制御方法
US5434818A (en) * 1993-12-23 1995-07-18 Unisys Corporation Four port RAM cell

Also Published As

Publication number Publication date
EP0718847A3 (de) 1997-07-02
US6005795A (en) 1999-12-21
DE69531141T2 (de) 2004-04-29
EP0718847B1 (de) 2003-06-25
US6181595B1 (en) 2001-01-30
EP0718847A2 (de) 1996-06-26
JPH0922987A (ja) 1997-01-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee