DE69531244D1 - Vereinfachter doppel-damaszenen prozess für die herstellung einer mehrlagen-metallisierung und einer verbindungsstruktur - Google Patents

Vereinfachter doppel-damaszenen prozess für die herstellung einer mehrlagen-metallisierung und einer verbindungsstruktur

Info

Publication number
DE69531244D1
DE69531244D1 DE69531244T DE69531244T DE69531244D1 DE 69531244 D1 DE69531244 D1 DE 69531244D1 DE 69531244 T DE69531244 T DE 69531244T DE 69531244 T DE69531244 T DE 69531244T DE 69531244 D1 DE69531244 D1 DE 69531244D1
Authority
DE
Germany
Prior art keywords
damascen
production
connecting structure
multiple layer
simplified double
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69531244T
Other languages
English (en)
Other versions
DE69531244T2 (de
Inventor
J Huang
Angela Hui
Robin Cheung
Mark Chang
Ming-Ren Lin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalFoundries Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of DE69531244D1 publication Critical patent/DE69531244D1/de
Publication of DE69531244T2 publication Critical patent/DE69531244T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/7681—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving one or more buried masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76813—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving a partial via etch
DE69531244T 1994-10-11 1995-09-25 Vereinfachter doppel-damaszenen prozess für die herstellung einer mehrlagen-metallisierung und einer verbindungsstruktur Expired - Lifetime DE69531244T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/320,516 US5635423A (en) 1994-10-11 1994-10-11 Simplified dual damascene process for multi-level metallization and interconnection structure
US320516 1994-10-11
PCT/US1995/012194 WO1996012297A2 (en) 1994-10-11 1995-09-25 Simplified dual damascene process for multilevel metallization and interconnection structure

Publications (2)

Publication Number Publication Date
DE69531244D1 true DE69531244D1 (de) 2003-08-14
DE69531244T2 DE69531244T2 (de) 2004-04-15

Family

ID=23246781

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69531244T Expired - Lifetime DE69531244T2 (de) 1994-10-11 1995-09-25 Vereinfachter doppel-damaszenen prozess für die herstellung einer mehrlagen-metallisierung und einer verbindungsstruktur

Country Status (5)

Country Link
US (1) US5635423A (de)
EP (1) EP0761014B1 (de)
DE (1) DE69531244T2 (de)
TW (1) TW293149B (de)
WO (1) WO1996012297A2 (de)

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DE69531244T2 (de) 2004-04-15
WO1996012297A3 (en) 1996-07-25
EP0761014B1 (de) 2003-07-09
US5635423A (en) 1997-06-03
WO1996012297A2 (en) 1996-04-25

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