DE69608669D1 - Stromloses aufbringen von metallfilmen mit sprayprozessor - Google Patents

Stromloses aufbringen von metallfilmen mit sprayprozessor

Info

Publication number
DE69608669D1
DE69608669D1 DE69608669T DE69608669T DE69608669D1 DE 69608669 D1 DE69608669 D1 DE 69608669D1 DE 69608669 T DE69608669 T DE 69608669T DE 69608669 T DE69608669 T DE 69608669T DE 69608669 D1 DE69608669 D1 DE 69608669D1
Authority
DE
Germany
Prior art keywords
application
metal films
spray processor
spray
processor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69608669T
Other languages
English (en)
Other versions
DE69608669T2 (de
Inventor
Yosi Shacham-Diamand
Vinh Nguyen
Valery Dubin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FSI INTERNATIONAL CHASKA
Cornell Research Foundation Inc
Tel Manufacturing and Engineering of America Inc
Original Assignee
FSI INTERNATIONAL CHASKA
Cornell Research Foundation Inc
FSI International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FSI INTERNATIONAL CHASKA, Cornell Research Foundation Inc, FSI International Inc filed Critical FSI INTERNATIONAL CHASKA
Publication of DE69608669D1 publication Critical patent/DE69608669D1/de
Application granted granted Critical
Publication of DE69608669T2 publication Critical patent/DE69608669T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C23C18/40—Coating with copper using reducing agents
    • C23C18/405—Formaldehyde
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1619—Apparatus for electroless plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1655—Process features
    • C23C18/1658—Process features with two steps starting with metal deposition followed by addition of reducing agent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1655—Process features
    • C23C18/166—Process features with two steps starting with addition of reducing agent followed by metal deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1675—Process conditions
    • C23C18/1676—Heating of the solution
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1675—Process conditions
    • C23C18/1682—Control of atmosphere
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1689—After-treatment
    • C23C18/1692—Heat-treatment
DE69608669T 1995-12-19 1996-12-18 Stromloses aufbringen von metallfilmen mit sprayprozessor Expired - Fee Related DE69608669T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US884895P 1995-12-19 1995-12-19
PCT/US1996/020354 WO1997022733A1 (en) 1995-12-19 1996-12-18 Electroless deposition of metal films with spray processor

Publications (2)

Publication Number Publication Date
DE69608669D1 true DE69608669D1 (de) 2000-07-06
DE69608669T2 DE69608669T2 (de) 2001-03-01

Family

ID=21734043

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69608669T Expired - Fee Related DE69608669T2 (de) 1995-12-19 1996-12-18 Stromloses aufbringen von metallfilmen mit sprayprozessor

Country Status (5)

Country Link
US (1) US6065424A (de)
EP (1) EP0811083B1 (de)
JP (1) JPH11510219A (de)
DE (1) DE69608669T2 (de)
WO (1) WO1997022733A1 (de)

Families Citing this family (265)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6429120B1 (en) 2000-01-18 2002-08-06 Micron Technology, Inc. Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals
US6020266A (en) * 1997-12-31 2000-02-01 Intel Corporation Single step electroplating process for interconnect via fill and metal line patterning
US6197181B1 (en) * 1998-03-20 2001-03-06 Semitool, Inc. Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece
US6565729B2 (en) 1998-03-20 2003-05-20 Semitool, Inc. Method for electrochemically depositing metal on a semiconductor workpiece
JP4304547B2 (ja) * 1998-03-20 2009-07-29 キヤノンアネルバ株式会社 枚葉式ｃｖｄ装置および枚葉式ｃｖｄ方法
TWI223678B (en) 1998-03-20 2004-11-11 Semitool Inc Process for applying a metal structure to a workpiece, the treated workpiece and a solution for electroplating copper
JP2000011323A (ja) * 1998-06-16 2000-01-14 Hitachi Metals Ltd 薄膜磁気ヘッド
US6284656B1 (en) 1998-08-04 2001-09-04 Micron Technology, Inc. Copper metallurgy in integrated circuits
US7033463B1 (en) * 1998-08-11 2006-04-25 Ebara Corporation Substrate plating method and apparatus
US6037271A (en) * 1998-10-21 2000-03-14 Fsi International, Inc. Low haze wafer treatment process
US7338908B1 (en) 2003-10-20 2008-03-04 Novellus Systems, Inc. Method for fabrication of semiconductor interconnect structure with reduced capacitance, leakage current, and improved breakdown voltage
US20040065540A1 (en) * 2002-06-28 2004-04-08 Novellus Systems, Inc. Liquid treatment using thin liquid layer
JP2000212754A (ja) 1999-01-22 2000-08-02 Sony Corp めっき方法及びその装置、並びにめっき構造
US6265020B1 (en) * 1999-09-01 2001-07-24 Shipley Company, L.L.C. Fluid delivery systems for electronic device manufacture
US6610151B1 (en) * 1999-10-02 2003-08-26 Uri Cohen Seed layers for interconnects and methods and apparatus for their fabrication
US7105434B2 (en) 1999-10-02 2006-09-12 Uri Cohen Advanced seed layery for metallic interconnects
US6395164B1 (en) * 1999-10-07 2002-05-28 International Business Machines Corporation Copper seed layer repair technique using electroless touch-up
US20020152955A1 (en) * 1999-12-30 2002-10-24 Yezdi Dordi Apparatus and method for depositing an electroless solution
US7262130B1 (en) * 2000-01-18 2007-08-28 Micron Technology, Inc. Methods for making integrated-circuit wiring from copper, silver, gold, and other metals
US6420262B1 (en) * 2000-01-18 2002-07-16 Micron Technology, Inc. Structures and methods to enhance copper metallization
US6376370B1 (en) * 2000-01-18 2002-04-23 Micron Technology, Inc. Process for providing seed layers for using aluminum, copper, gold and silver metallurgy process for providing seed layers for using aluminum, copper, gold and silver metallurgy
JP2001355074A (ja) * 2000-04-10 2001-12-25 Sony Corp 無電解メッキ処理方法およびその装置
US6674167B1 (en) * 2000-05-31 2004-01-06 Micron Technology, Inc. Multilevel copper interconnect with double passivation
US6423629B1 (en) * 2000-05-31 2002-07-23 Kie Y. Ahn Multilevel copper interconnects with low-k dielectrics and air gaps
US6489857B2 (en) * 2000-11-30 2002-12-03 International Business Machines Corporation Multiposition micro electromechanical switch
JP4482744B2 (ja) * 2001-02-23 2010-06-16 株式会社日立製作所 無電解銅めっき液、無電解銅めっき方法、配線板の製造方法
US20030008243A1 (en) * 2001-07-09 2003-01-09 Micron Technology, Inc. Copper electroless deposition technology for ULSI metalization
US6664122B1 (en) 2001-10-19 2003-12-16 Novellus Systems, Inc. Electroless copper deposition method for preparing copper seed layers
US7265323B2 (en) 2001-10-26 2007-09-04 Engineered Glass Products, Llc Electrically conductive heated glass panel assembly, control system, and method for producing panels
JP2003147541A (ja) * 2001-11-15 2003-05-21 Hitachi Ltd 無電解銅めっき液、無電解銅めっき用補給液及び配線板の製造方法
US6843852B2 (en) * 2002-01-16 2005-01-18 Intel Corporation Apparatus and method for electroless spray deposition
US6824666B2 (en) * 2002-01-28 2004-11-30 Applied Materials, Inc. Electroless deposition method over sub-micron apertures
US7138014B2 (en) 2002-01-28 2006-11-21 Applied Materials, Inc. Electroless deposition apparatus
US6913651B2 (en) * 2002-03-22 2005-07-05 Blue29, Llc Apparatus and method for electroless deposition of materials on semiconductor substrates
US6899816B2 (en) * 2002-04-03 2005-05-31 Applied Materials, Inc. Electroless deposition method
US6905622B2 (en) * 2002-04-03 2005-06-14 Applied Materials, Inc. Electroless deposition method
US20050072455A1 (en) * 2002-04-04 2005-04-07 Engineered Glass Products, Llc Glass solar panels
US7690324B1 (en) 2002-06-28 2010-04-06 Novellus Systems, Inc. Small-volume electroless plating cell
US20030207206A1 (en) * 2002-04-22 2003-11-06 General Electric Company Limited play data storage media and method for limiting access to data thereon
WO2003091476A1 (fr) * 2002-04-23 2003-11-06 Nikko Materials Co., Ltd. Procede de depot non electrolytique et tranche de semi-conducteur sur laquelle est formee une couche de depot metallique
US7189313B2 (en) * 2002-05-09 2007-03-13 Applied Materials, Inc. Substrate support with fluid retention band
US8257781B1 (en) * 2002-06-28 2012-09-04 Novellus Systems, Inc. Electroless plating-liquid system
US7025866B2 (en) * 2002-08-21 2006-04-11 Micron Technology, Inc. Microelectronic workpiece for electrochemical deposition processing and methods of manufacturing and using such microelectronic workpieces
US7897198B1 (en) 2002-09-03 2011-03-01 Novellus Systems, Inc. Electroless layer plating process and apparatus
US6821909B2 (en) * 2002-10-30 2004-11-23 Applied Materials, Inc. Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application
FI20030816A (fi) * 2003-05-30 2004-12-01 Metso Corp Menetelmä metallijohtimien valmistamiseksi substraatille
US20050006339A1 (en) * 2003-07-11 2005-01-13 Peter Mardilovich Electroless deposition methods and systems
US7220665B2 (en) * 2003-08-05 2007-05-22 Micron Technology, Inc. H2 plasma treatment
US7654221B2 (en) * 2003-10-06 2010-02-02 Applied Materials, Inc. Apparatus for electroless deposition of metals onto semiconductor substrates
US7827930B2 (en) * 2004-01-26 2010-11-09 Applied Materials, Inc. Apparatus for electroless deposition of metals onto semiconductor substrates
US7064065B2 (en) * 2003-10-15 2006-06-20 Applied Materials, Inc. Silver under-layers for electroless cobalt alloys
US7465358B2 (en) * 2003-10-15 2008-12-16 Applied Materials, Inc. Measurement techniques for controlling aspects of a electroless deposition process
US20070111519A1 (en) * 2003-10-15 2007-05-17 Applied Materials, Inc. Integrated electroless deposition system
WO2005038084A2 (en) * 2003-10-17 2005-04-28 Applied Materials, Inc. Selective self-initiating electroless capping of copper with cobalt-containing alloys
US20050095830A1 (en) * 2003-10-17 2005-05-05 Applied Materials, Inc. Selective self-initiating electroless capping of copper with cobalt-containing alloys
US8158532B2 (en) * 2003-10-20 2012-04-17 Novellus Systems, Inc. Topography reduction and control by selective accelerator removal
US7972970B2 (en) 2003-10-20 2011-07-05 Novellus Systems, Inc. Fabrication of semiconductor interconnect structure
US7531463B2 (en) * 2003-10-20 2009-05-12 Novellus Systems, Inc. Fabrication of semiconductor interconnect structure
US8530359B2 (en) * 2003-10-20 2013-09-10 Novellus Systems, Inc. Modulated metal removal using localized wet etching
US8372757B2 (en) 2003-10-20 2013-02-12 Novellus Systems, Inc. Wet etching methods for copper removal and planarization in semiconductor processing
US20050092611A1 (en) * 2003-11-03 2005-05-05 Semitool, Inc. Bath and method for high rate copper deposition
US7205233B2 (en) * 2003-11-07 2007-04-17 Applied Materials, Inc. Method for forming CoWRe alloys by electroless deposition
US20060003570A1 (en) * 2003-12-02 2006-01-05 Arulkumar Shanmugasundram Method and apparatus for electroless capping with vapor drying
US7597763B2 (en) * 2004-01-22 2009-10-06 Intel Corporation Electroless plating systems and methods
US20050170650A1 (en) * 2004-01-26 2005-08-04 Hongbin Fang Electroless palladium nitrate activation prior to cobalt-alloy deposition
US20050181226A1 (en) * 2004-01-26 2005-08-18 Applied Materials, Inc. Method and apparatus for selectively changing thin film composition during electroless deposition in a single chamber
US20050161338A1 (en) * 2004-01-26 2005-07-28 Applied Materials, Inc. Electroless cobalt alloy deposition process
US20060033678A1 (en) * 2004-01-26 2006-02-16 Applied Materials, Inc. Integrated electroless deposition system
US20050230350A1 (en) 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US7300860B2 (en) * 2004-03-30 2007-11-27 Intel Corporation Integrated circuit with metal layer having carbon nanotubes and methods of making same
US20050253268A1 (en) * 2004-04-22 2005-11-17 Shao-Ta Hsu Method and structure for improving adhesion between intermetal dielectric layer and cap layer
US7476327B2 (en) * 2004-05-04 2009-01-13 Idc, Llc Method of manufacture for microelectromechanical devices
US7186652B2 (en) * 2004-05-05 2007-03-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method for preventing Cu contamination and oxidation in semiconductor device manufacturing
WO2006005692A1 (en) * 2004-07-09 2006-01-19 Akzo Nobel N.V. Composition comprising choline hydroxide and process for preparing the same
US7564612B2 (en) 2004-09-27 2009-07-21 Idc, Llc Photonic MEMS and structures
US20060162658A1 (en) * 2005-01-27 2006-07-27 Applied Materials, Inc. Ruthenium layer deposition apparatus and method
US7438949B2 (en) * 2005-01-27 2008-10-21 Applied Materials, Inc. Ruthenium containing layer deposition method
US20060240187A1 (en) * 2005-01-27 2006-10-26 Applied Materials, Inc. Deposition of an intermediate catalytic layer on a barrier layer for copper metallization
US20060246699A1 (en) * 2005-03-18 2006-11-02 Weidman Timothy W Process for electroless copper deposition on a ruthenium seed
TW200707640A (en) * 2005-03-18 2007-02-16 Applied Materials Inc Contact metallization scheme using a barrier layer over a silicide layer
US7651934B2 (en) 2005-03-18 2010-01-26 Applied Materials, Inc. Process for electroless copper deposition
US20060246217A1 (en) * 2005-03-18 2006-11-02 Weidman Timothy W Electroless deposition process on a silicide contact
US7681581B2 (en) * 2005-04-01 2010-03-23 Fsi International, Inc. Compact duct system incorporating moveable and nestable baffles for use in tools used to process microelectronic workpieces with one or more treatment fluids
US20070071888A1 (en) * 2005-09-21 2007-03-29 Arulkumar Shanmugasundram Method and apparatus for forming device features in an integrated electroless deposition system
US7456102B1 (en) 2005-10-11 2008-11-25 Novellus Systems, Inc. Electroless copper fill process
US7605082B1 (en) 2005-10-13 2009-10-20 Novellus Systems, Inc. Capping before barrier-removal IC fabrication method
US20070099806A1 (en) * 2005-10-28 2007-05-03 Stewart Michael P Composition and method for selectively removing native oxide from silicon-containing surfaces
US7527998B2 (en) 2006-06-30 2009-05-05 Qualcomm Mems Technologies, Inc. Method of manufacturing MEMS devices providing air gap control
CN104299928B (zh) 2006-07-07 2018-02-23 Tel Fsi股份有限公司 用于处理微电子工件的设备和方法
TWI348499B (en) * 2006-07-07 2011-09-11 Rohm & Haas Elect Mat Electroless copper and redox couples
US7684106B2 (en) * 2006-11-02 2010-03-23 Qualcomm Mems Technologies, Inc. Compatible MEMS switch architecture
CN101802975B (zh) * 2007-08-07 2012-10-03 Fsi国际公司 在用于通过一种或多种处理流体来处理微电子工件的工具中的阻挡板和文氏管容纳系统的漂洗方法以及相关装置
US7867900B2 (en) * 2007-09-28 2011-01-11 Applied Materials, Inc. Aluminum contact integration on cobalt silicide junction
US9439293B2 (en) * 2007-11-21 2016-09-06 Xerox Corporation Galvanic process for making printed conductive metal markings for chipless RFID applications
CN102683249B (zh) * 2008-05-09 2015-06-17 泰尔Fsi公司 用于处理微电子工件的系统
US8475637B2 (en) * 2008-12-17 2013-07-02 Novellus Systems, Inc. Electroplating apparatus with vented electrolyte manifold
KR20120080595A (ko) 2009-09-02 2012-07-17 노벨러스 시스템즈, 인코포레이티드 감소된 등방성 에칭제 물질 소비 및 폐기물 발생
TW201109267A (en) * 2009-09-08 2011-03-16 Jung-Tang Huang A general strength and sensitivity enhancement method for micromachined devices
KR20130100232A (ko) 2010-04-09 2013-09-10 퀄컴 엠이엠에스 테크놀로지스, 인크. 전기 기계 디바이스의 기계층 및 그 형성 방법
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US8632628B2 (en) 2010-10-29 2014-01-21 Lam Research Corporation Solutions and methods for metal deposition
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
JP5496925B2 (ja) * 2011-01-25 2014-05-21 東京エレクトロン株式会社 めっき処理装置、めっき処理方法および記憶媒体
US8771539B2 (en) 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US8963159B2 (en) 2011-04-04 2015-02-24 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US9134527B2 (en) 2011-04-04 2015-09-15 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
US8679982B2 (en) 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
US8679983B2 (en) 2011-09-01 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
WO2013070436A1 (en) 2011-11-08 2013-05-16 Applied Materials, Inc. Methods of reducing substrate dislocation during gapfill processing
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8765574B2 (en) 2012-11-09 2014-07-01 Applied Materials, Inc. Dry etch process
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US9064816B2 (en) 2012-11-30 2015-06-23 Applied Materials, Inc. Dry-etch for selective oxidation removal
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US8801952B1 (en) 2013-03-07 2014-08-12 Applied Materials, Inc. Conformal oxide dry etch
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
USD737946S1 (en) 2013-03-15 2015-09-01 Illinois Tool Works Inc. Filter for an air filtration device
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
USD732647S1 (en) 2013-03-15 2015-06-23 Illinois Tool Works Inc. Air filtration device
USD737945S1 (en) 2013-03-15 2015-09-01 Illinois Tool Works Inc. Filter
US9700821B2 (en) 2013-03-15 2017-07-11 Illinois Tool Works Inc. Portable industrial air filtration device
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
SG10201708364XA (en) 2013-06-06 2017-11-29 Entegris Inc Compositions and methods for selectively etching titanium nitride
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
USD758558S1 (en) 2014-03-10 2016-06-07 Illinois Tool Works Inc. Air filtration device
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9847289B2 (en) 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
USD761946S1 (en) 2014-09-12 2016-07-19 Illinois Tool Works Inc. Filter for an air filtration device
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9517428B2 (en) 2014-09-12 2016-12-13 Illinois Tool Works Inc. Filter for a portable industrial air filtration device
US9478434B2 (en) 2014-09-24 2016-10-25 Applied Materials, Inc. Chlorine-based hardmask removal
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
JP7030020B2 (ja) * 2018-06-13 2022-03-04 株式会社Ｓｃｒｅｅｎホールディングス 無電解めっき方法、無電解めっき装置およびプログラム
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
WO2021177015A1 (ja) * 2020-03-05 2021-09-10 富士フイルム株式会社 被覆方法
FR3133199A1 (fr) * 2022-03-04 2023-09-08 Jet Metal Technologies Procede de fabrication d’un article tridimensionnel a motif(s) metallique(s)
CN114934265B (zh) * 2022-05-26 2023-03-07 中国科学院长春光学精密机械与物理研究所 薄膜生长装置、方法及二氧化钒薄膜生长方法
CN115595566A (zh) * 2022-11-17 2023-01-13 西华大学（Cn） 一种环保节能高效灵活的化学镀装置和方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3075855A (en) * 1958-03-31 1963-01-29 Gen Electric Copper plating process and solutions
US2938805A (en) * 1958-03-31 1960-05-31 Gen Electric Process of stabilizing autocatalytic copper plating solutions
US3075856A (en) * 1958-03-31 1963-01-29 Gen Electric Copper plating process and solution
US2956900A (en) * 1958-07-25 1960-10-18 Alpha Metal Lab Inc Nickel coating composition and method of coating
GB880414A (en) * 1958-11-20 1961-10-18 Pilkington Brothers Ltd Improvements in or relating to the deposition of copper
CH428372A (de) * 1963-02-21 1967-01-15 Ermes Rolf Automatisches Silberspritzgerät zur chemischen Versilberung von Gegenständen
US3990462A (en) * 1975-05-19 1976-11-09 Fluoroware Systems Corporation Substrate stripping and cleaning apparatus
US4286541A (en) * 1979-07-26 1981-09-01 Fsi Corporation Applying photoresist onto silicon wafers
US4525390A (en) * 1984-03-09 1985-06-25 International Business Machines Corporation Deposition of copper from electroless plating compositions
US4682615A (en) * 1984-07-02 1987-07-28 Fsi Corporation Rinsing in acid processing of substrates
US4609575A (en) * 1984-07-02 1986-09-02 Fsi Corporation Method of apparatus for applying chemicals to substrates in an acid processing system
US5401539A (en) * 1985-11-12 1995-03-28 Osprey Metals Limited Production of metal spray deposits
US4908242A (en) * 1986-10-31 1990-03-13 Kollmorgen Corporation Method of consistently producing a copper deposit on a substrate by electroless deposition which deposit is essentially free of fissures
JP2675309B2 (ja) * 1987-09-19 1997-11-12 パイオニア株式会社 無電解めっき方法及びその装置
US5077090A (en) * 1990-03-02 1991-12-31 General Electric Company Method of forming dual alloy disks
JPH0734257A (ja) * 1993-07-21 1995-02-03 Sony Corp 無電解メッキ用薬液供給装置

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US6065424A (en) 2000-05-23
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