DE69610517T2 - Mit einer ferroelektrischen Dünnschicht beschichtetes Substrat, Methode zu dessen Herstellung sowie nichtflüchtiger Speicher, der dieses Substrat enthält - Google Patents

Mit einer ferroelektrischen Dünnschicht beschichtetes Substrat, Methode zu dessen Herstellung sowie nichtflüchtiger Speicher, der dieses Substrat enthält

Info

Publication number
DE69610517T2
DE69610517T2 DE69610517T DE69610517T DE69610517T2 DE 69610517 T2 DE69610517 T2 DE 69610517T2 DE 69610517 T DE69610517 T DE 69610517T DE 69610517 T DE69610517 T DE 69610517T DE 69610517 T2 DE69610517 T2 DE 69610517T2
Authority
DE
Germany
Prior art keywords
substrate
production
thin film
volatile memory
ferroelectric thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69610517T
Other languages
English (en)
Other versions
DE69610517D1 (de
Inventor
Takeshi Kijima
Sakiko Satoh
Hironori Matsunaga
Masayoshi Koba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69610517D1 publication Critical patent/DE69610517D1/de
Application granted granted Critical
Publication of DE69610517T2 publication Critical patent/DE69610517T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Volatile Memory (AREA)
  • Inorganic Insulating Materials (AREA)
  • Insulating Bodies (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
DE69610517T 1995-03-08 1996-03-07 Mit einer ferroelektrischen Dünnschicht beschichtetes Substrat, Methode zu dessen Herstellung sowie nichtflüchtiger Speicher, der dieses Substrat enthält Expired - Lifetime DE69610517T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7833895 1995-03-08
JP01790996A JP3363301B2 (ja) 1995-03-08 1996-02-02 強誘電体薄膜被覆基板及びその製造方法及び強誘電体薄膜被覆基板によって構成された不揮発性メモリ

Publications (2)

Publication Number Publication Date
DE69610517D1 DE69610517D1 (de) 2000-11-09
DE69610517T2 true DE69610517T2 (de) 2001-05-17

Family

ID=26354495

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69610517T Expired - Lifetime DE69610517T2 (de) 1995-03-08 1996-03-07 Mit einer ferroelektrischen Dünnschicht beschichtetes Substrat, Methode zu dessen Herstellung sowie nichtflüchtiger Speicher, der dieses Substrat enthält

Country Status (4)

Country Link
US (1) US5821005A (de)
EP (1) EP0732422B1 (de)
JP (1) JP3363301B2 (de)
DE (1) DE69610517T2 (de)

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JPH10182291A (ja) * 1996-12-20 1998-07-07 Sharp Corp 強誘電体薄膜の製造方法、強誘電体薄膜被覆基板及びキャパシタ
JPH10209392A (ja) * 1997-01-22 1998-08-07 Sony Corp 半導体メモリセル用キャパシタの電極及び半導体メモリセル用キャパシタ、並びに、それらの作製方法
US6104049A (en) * 1997-03-03 2000-08-15 Symetrix Corporation Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same
JPH10313097A (ja) * 1997-05-13 1998-11-24 Sharp Corp 強誘電体薄膜、製造方法及び強誘電体薄膜を含んでなる素子
JP3549715B2 (ja) * 1997-10-15 2004-08-04 日本電気株式会社 Ｂｉ層状強誘電体薄膜の製造方法
US5967497A (en) * 1997-12-15 1999-10-19 Energy Absorption Systems, Inc. Highway barrier and guardrail
US6010744A (en) * 1997-12-23 2000-01-04 Advanced Technology Materials, Inc. Method for nucleation controlled chemical vapor deposition of metal oxide ferroelectric thin films
US6120846A (en) * 1997-12-23 2000-09-19 Advanced Technology Materials, Inc. Method for the selective deposition of bismuth based ferroelectric thin films by chemical vapor deposition
JPH11251586A (ja) * 1998-03-03 1999-09-17 Fuji Electric Co Ltd 電界効果トランジスタ
US6255122B1 (en) 1999-04-27 2001-07-03 International Business Machines Corporation Amorphous dielectric capacitors on silicon
US6388285B1 (en) 1999-06-04 2002-05-14 International Business Machines Corporation Feram cell with internal oxygen source and method of oxygen release
EP1096502B1 (de) * 1999-10-13 2005-06-29 Rohm Co., Ltd. Nichtflüchtiger Speicher und Steuerungsverfahren dafür
US6437392B1 (en) * 1999-12-08 2002-08-20 Agere Systems Optoelectronics Guardian Corp. Article comprising a dielectric material of ZR-Ge-Ti-O or Hf-Ge-Ti-O and method of making the same
US6562678B1 (en) * 2000-03-07 2003-05-13 Symetrix Corporation Chemical vapor deposition process for fabricating layered superlattice materials
US7008669B2 (en) * 2001-06-13 2006-03-07 Seiko Epson Corporation Ceramic and method of manufacturing the same, dielectric capacitor, semiconductor device, and element
US6489645B1 (en) * 2001-07-03 2002-12-03 Matsushita Electric Industrial Co., Ltd. Integrated circuit device including a layered superlattice material with an interface buffer layer
JP4108602B2 (ja) * 2001-08-28 2008-06-25 Ｔｄｋ株式会社 薄膜容量素子用組成物、高誘電率絶縁膜、薄膜容量素子および薄膜積層コンデンサ
WO2003021615A1 (en) * 2001-08-28 2003-03-13 Tdk Corporation Thin film capacity element-use composition, high-permittivity insulation film, thin film capacity element and thin film multilayer capacitor
JP3949990B2 (ja) * 2002-03-29 2007-07-25 株式会社東芝 電圧制御発振器
US6559014B1 (en) * 2001-10-15 2003-05-06 Advanced Micro Devices, Inc. Preparation of composite high-K / standard-K dielectrics for semiconductor devices
KR100493155B1 (ko) * 2002-05-23 2005-06-03 삼성전자주식회사 열적으로 안정한 강유전성 메모리 장치
US6818469B2 (en) * 2002-05-27 2004-11-16 Nec Corporation Thin film capacitor, method for manufacturing the same and printed circuit board incorporating the same
JP2004031728A (ja) * 2002-06-27 2004-01-29 Matsushita Electric Ind Co Ltd 記憶装置
US6928376B2 (en) * 2002-10-03 2005-08-09 Texas Instruments Incorporated Apparatus and methods for ferroelectric ram fatigue testing
WO2004077565A1 (ja) * 2003-02-27 2004-09-10 Tdk Corporation 薄膜容量素子ならびにそれを含んだ電子回路および電子機器
WO2004077566A1 (ja) * 2003-02-27 2004-09-10 Tdk Corporation 高誘電率絶縁膜、薄膜容量素子、薄膜積層コンデンサおよび薄膜容量素子の製造方法
JP4977976B2 (ja) * 2004-08-06 2012-07-18 三菱瓦斯化学株式会社 絶縁化超微粉末および高誘電率樹脂複合材料
JP2008028197A (ja) * 2006-07-21 2008-02-07 Matsushita Electric Ind Co Ltd 強誘電体膜およびその製造方法、強誘電体キャパシタ、強誘電体メモリおよびその製造方法
JP4433214B2 (ja) 2007-10-23 2010-03-17 セイコーエプソン株式会社 圧電素子の製造方法、および圧電素子
JP5504008B2 (ja) 2009-03-06 2014-05-28 株式会社半導体エネルギー研究所 半導体装置
JP5527527B2 (ja) * 2010-03-12 2014-06-18 セイコーエプソン株式会社 液体噴射ヘッド及び液体噴射装置
US9607717B2 (en) * 2014-06-06 2017-03-28 Texas Instruments Incorporated Reliability screening of ferroelectric memories in integrated circuits

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* Cited by examiner, † Cited by third party
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JPH03108770A (ja) * 1989-09-22 1991-05-08 Olympus Optical Co Ltd 強誘電体メモリ
JPH03108192A (ja) * 1989-09-22 1991-05-08 Olympus Optical Co Ltd 強誘電体メモリ
US5423285A (en) * 1991-02-25 1995-06-13 Olympus Optical Co., Ltd. Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications
JP3182909B2 (ja) * 1991-09-25 2001-07-03 セイコーエプソン株式会社 強誘電体キャパシタの製造方法及び強誘電体メモリ装置の製造方法
WO1994010704A1 (en) * 1992-10-23 1994-05-11 Symetrix Corporation Integrated circuit with layered superlattice material and method of fabricating same
US5514484A (en) * 1992-11-05 1996-05-07 Fuji Xerox Co., Ltd. Oriented ferroelectric thin film
US5248564A (en) * 1992-12-09 1993-09-28 Bell Communications Research, Inc. C-axis perovskite thin films grown on silicon dioxide
JPH06302872A (ja) * 1993-04-14 1994-10-28 Sumitomo Electric Ind Ltd 酸化物超電導薄膜上に上層の薄膜を積層する方法
US5548475A (en) * 1993-11-15 1996-08-20 Sharp Kabushiki Kaisha Dielectric thin film device
JP3113141B2 (ja) * 1993-12-28 2000-11-27 シャープ株式会社 強誘電体結晶薄膜被覆基板、その製造方法及び強誘電体結晶薄膜被覆基板を用いた強誘電体薄膜デバイス
JP3095944B2 (ja) * 1994-06-21 2000-10-10 シャープ株式会社 酸化物結晶薄膜の製造方法及び薄膜素子

Also Published As

Publication number Publication date
EP0732422B1 (de) 2000-10-04
EP0732422A2 (de) 1996-09-18
JPH08306231A (ja) 1996-11-22
JP3363301B2 (ja) 2003-01-08
DE69610517D1 (de) 2000-11-09
EP0732422A3 (de) 1996-12-04
US5821005A (en) 1998-10-13

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