DE69615538T2 - Integrierte speicherredundanzschaltung für programmierbare festwertspeicher und progammierungsverfahren - Google Patents

Integrierte speicherredundanzschaltung für programmierbare festwertspeicher und progammierungsverfahren

Info

Publication number
DE69615538T2
DE69615538T2 DE69615538T DE69615538T DE69615538T2 DE 69615538 T2 DE69615538 T2 DE 69615538T2 DE 69615538 T DE69615538 T DE 69615538T DE 69615538 T DE69615538 T DE 69615538T DE 69615538 T2 DE69615538 T2 DE 69615538T2
Authority
DE
Germany
Prior art keywords
memory cells
memory
programming
defective
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69615538T
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English (en)
Other versions
DE69615538D1 (de
Inventor
E O'toole
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of DE69615538D1 publication Critical patent/DE69615538D1/de
Application granted granted Critical
Publication of DE69615538T2 publication Critical patent/DE69615538T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
    • G11C29/765—Masking faults in memories by using spares or by reconfiguring using address translation or modifications in solid state disks
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/52—Protection of memory contents; Detection of errors in memory contents
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/816—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout
    • G11C29/82—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout for EEPROMs
DE69615538T 1995-02-13 1996-02-07 Integrierte speicherredundanzschaltung für programmierbare festwertspeicher und progammierungsverfahren Expired - Lifetime DE69615538T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/387,244 US5513144A (en) 1995-02-13 1995-02-13 On-chip memory redundancy circuitry for programmable non-volatile memories, and methods for programming same
PCT/US1996/001756 WO1996025744A1 (en) 1995-02-13 1996-02-07 On-chip memory redundancy circuitry for programmable non-volatile memories, and methods for programming same

Publications (2)

Publication Number Publication Date
DE69615538D1 DE69615538D1 (de) 2001-10-31
DE69615538T2 true DE69615538T2 (de) 2002-05-08

Family

ID=23529081

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69615538T Expired - Lifetime DE69615538T2 (de) 1995-02-13 1996-02-07 Integrierte speicherredundanzschaltung für programmierbare festwertspeicher und progammierungsverfahren

Country Status (8)

Country Link
US (3) US5513144A (de)
EP (1) EP0809849B1 (de)
JP (1) JP3764167B2 (de)
KR (1) KR100386132B1 (de)
AT (1) ATE206241T1 (de)
DE (1) DE69615538T2 (de)
TW (1) TW290690B (de)
WO (1) WO1996025744A1 (de)

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US5513144A (en) 1996-04-30
US5751647A (en) 1998-05-12
DE69615538D1 (de) 2001-10-31
JPH11500561A (ja) 1999-01-12
WO1996025744A1 (en) 1996-08-22
US5648934A (en) 1997-07-15
EP0809849A1 (de) 1997-12-03
KR19980702143A (ko) 1998-07-15
JP3764167B2 (ja) 2006-04-05
KR100386132B1 (ko) 2003-08-19
TW290690B (de) 1996-11-11
EP0809849B1 (de) 2001-09-26
ATE206241T1 (de) 2001-10-15

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