DE69621387D1 - Flächiges Teil für Halbleitergehäuse - Google Patents

Flächiges Teil für Halbleitergehäuse

Info

Publication number
DE69621387D1
DE69621387D1 DE69621387T DE69621387T DE69621387D1 DE 69621387 D1 DE69621387 D1 DE 69621387D1 DE 69621387 T DE69621387 T DE 69621387T DE 69621387 T DE69621387 T DE 69621387T DE 69621387 D1 DE69621387 D1 DE 69621387D1
Authority
DE
Germany
Prior art keywords
earth metal
alkaline earth
plate type
type member
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69621387T
Other languages
English (en)
Other versions
DE69621387T2 (de
Inventor
Mitsunori Kobayashi
Akira Fukui
Kouichi Takashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69621387D1 publication Critical patent/DE69621387D1/de
Application granted granted Critical
Publication of DE69621387T2 publication Critical patent/DE69621387T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736Metallic materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4871Bases, plates or heatsinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492Bases or plates or solder therefor
    • H01L23/4922Bases or plates or solder therefor having a heterogeneous or anisotropic structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
DE69621387T 1995-08-03 1996-07-02 Flächiges Teil für Halbleitergehäuse Expired - Lifetime DE69621387T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7198302A JPH0945815A (ja) 1995-08-03 1995-08-03 半導体用パッケージ、該パッケージ用板状部材及びその製造方法

Publications (2)

Publication Number Publication Date
DE69621387D1 true DE69621387D1 (de) 2002-07-04
DE69621387T2 DE69621387T2 (de) 2002-10-17

Family

ID=16388879

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69621387T Expired - Lifetime DE69621387T2 (de) 1995-08-03 1996-07-02 Flächiges Teil für Halbleitergehäuse

Country Status (5)

Country Link
US (1) US5990548A (de)
EP (1) EP0757383B1 (de)
JP (1) JPH0945815A (de)
AT (1) ATE218245T1 (de)
DE (1) DE69621387T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003100968A (ja) * 2001-09-21 2003-04-04 Toyota Industries Corp 放熱材及びその製造方法
DE102016125348B4 (de) * 2016-12-22 2020-06-25 Rogers Germany Gmbh Trägersubstrat für elektrische Bauteile und Verfahren zur Herstellung eines Trägersubstrats

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5921032A (ja) * 1982-07-26 1984-02-02 Sumitomo Electric Ind Ltd 半導体装置用基板
JPS5946050A (ja) * 1982-09-09 1984-03-15 Narumi China Corp 半導体用セラミツクパツケ−ジ
US4965659A (en) * 1987-06-30 1990-10-23 Sumitomo Electric Industries, Ltd. Member for a semiconductor structure
JP2517024B2 (ja) * 1987-12-08 1996-07-24 新光電気工業株式会社 セラミックパッケ―ジとその製造方法
JPH01272733A (ja) * 1988-04-25 1989-10-31 Mitsubishi Shindoh Co Ltd 半導体装置用Cu合金製リードフレーム材
US5015803A (en) * 1989-05-31 1991-05-14 Olin Corporation Thermal performance package for integrated circuit chip
KR940010455B1 (ko) * 1992-09-24 1994-10-22 김영길 고강도, 우수한 전기전도도 및 열적안정성을 갖는 동(Cu)합금 및 그 제조방법

Also Published As

Publication number Publication date
JPH0945815A (ja) 1997-02-14
US5990548A (en) 1999-11-23
ATE218245T1 (de) 2002-06-15
EP0757383A2 (de) 1997-02-05
EP0757383A3 (de) 1998-09-30
EP0757383B1 (de) 2002-05-29
DE69621387T2 (de) 2002-10-17

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN

8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: BOCKHORNI & KOLLEGEN, 80687 MUENCHEN