DE69624780D1 - Nichtflüchtiger elektrisch veränderbarer halbleiterspeicher für analoge und digitale speicherung - Google Patents

Nichtflüchtiger elektrisch veränderbarer halbleiterspeicher für analoge und digitale speicherung

Info

Publication number
DE69624780D1
DE69624780D1 DE69624780T DE69624780T DE69624780D1 DE 69624780 D1 DE69624780 D1 DE 69624780D1 DE 69624780 T DE69624780 T DE 69624780T DE 69624780 T DE69624780 T DE 69624780T DE 69624780 D1 DE69624780 D1 DE 69624780D1
Authority
DE
Germany
Prior art keywords
analog
semiconductor memory
digital storage
volatile electrically
electrically changeable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69624780T
Other languages
English (en)
Other versions
DE69624780T2 (de
Inventor
Trevor Blyth
T Simko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Winbond Electronics Corp
Original Assignee
Information Storage Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Information Storage Devices Inc filed Critical Information Storage Devices Inc
Publication of DE69624780D1 publication Critical patent/DE69624780D1/de
Application granted granted Critical
Publication of DE69624780T2 publication Critical patent/DE69624780T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G11C11/5635—Erasing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/005—Electric analogue stores, e.g. for storing instantaneous values with non-volatile charge storage, e.g. on floating gate or MNOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/16—Storage of analogue signals in digital stores using an arrangement comprising analogue/digital [A/D] converters, digital memories and digital/analogue [D/A] converters 
DE69624780T 1995-07-31 1996-07-24 Nichtflüchtiger elektrisch veränderbarer halbleiterspeicher für analoge und digitale speicherung Expired - Fee Related DE69624780T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/509,348 US5973956A (en) 1995-07-31 1995-07-31 Non-volatile electrically alterable semiconductor memory for analog and digital storage
PCT/US1996/012237 WO1997005620A1 (en) 1995-07-31 1996-07-24 Non-volatile electrically alterable semiconductor memory for analog and digital storage

Publications (2)

Publication Number Publication Date
DE69624780D1 true DE69624780D1 (de) 2002-12-19
DE69624780T2 DE69624780T2 (de) 2003-07-17

Family

ID=24026281

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69624780T Expired - Fee Related DE69624780T2 (de) 1995-07-31 1996-07-24 Nichtflüchtiger elektrisch veränderbarer halbleiterspeicher für analoge und digitale speicherung

Country Status (8)

Country Link
US (2) US5973956A (de)
EP (1) EP0783756B1 (de)
JP (1) JP3545420B2 (de)
KR (1) KR100281812B1 (de)
AU (1) AU6598496A (de)
CA (1) CA2201366A1 (de)
DE (1) DE69624780T2 (de)
WO (1) WO1997005620A1 (de)

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US7675783B2 (en) * 2007-02-27 2010-03-09 Samsung Electronics Co., Ltd. Nonvolatile memory device and driving method thereof
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US9558814B2 (en) * 2015-04-10 2017-01-31 HGST Netherlands, B.V. Hybrid analog and digital memory device

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Also Published As

Publication number Publication date
EP0783756B1 (de) 2002-11-13
CA2201366A1 (en) 1997-02-13
EP0783756A4 (de) 1999-06-16
JP3545420B2 (ja) 2004-07-21
JPH10510658A (ja) 1998-10-13
KR970706579A (ko) 1997-11-03
AU6598496A (en) 1997-02-26
DE69624780T2 (de) 2003-07-17
US5969987A (en) 1999-10-19
US5973956A (en) 1999-10-26
KR100281812B1 (ko) 2001-02-15
EP0783756A1 (de) 1997-07-16
WO1997005620A1 (en) 1997-02-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: WINBOND ELECTRONICS CORP., HSINCHU, TW

8339 Ceased/non-payment of the annual fee