DE69624973T2 - Versiegelte Hohlraumanordnung - Google Patents

Versiegelte Hohlraumanordnung

Info

Publication number
DE69624973T2
DE69624973T2 DE69624973T DE69624973T DE69624973T2 DE 69624973 T2 DE69624973 T2 DE 69624973T2 DE 69624973 T DE69624973 T DE 69624973T DE 69624973 T DE69624973 T DE 69624973T DE 69624973 T2 DE69624973 T2 DE 69624973T2
Authority
DE
Germany
Prior art keywords
cavities
relates
sealed cavity
cavity arrangement
conductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69624973T
Other languages
English (en)
Other versions
DE69624973D1 (de
Inventor
Henrik Jakobsen
Terje Kvisteroy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Sensonor AS
Original Assignee
Sensonor ASA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sensonor ASA filed Critical Sensonor ASA
Publication of DE69624973D1 publication Critical patent/DE69624973D1/de
Application granted granted Critical
Publication of DE69624973T2 publication Critical patent/DE69624973T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261Processes for packaging MEMS devices
    • B81C1/00301Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481Internal lead connections, e.g. via connections, feedthrough structures
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00Microstructural systems or auxiliary parts thereof
    • B81B2207/09Packages
    • B81B2207/091Arrangements for connecting external electrical signals to mechanical structures inside the package
    • B81B2207/094Feed-through, via
    • B81B2207/096Feed-through, via through the substrate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00Microstructural systems or auxiliary parts thereof
    • B81B2207/09Packages
    • B81B2207/091Arrangements for connecting external electrical signals to mechanical structures inside the package
    • B81B2207/097Interconnects arranged on the substrate or the lid, and covered by the package seal
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/64Interconnection or interfacing through or under capping or via rear of substrate in microsensors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • H01L2924/15192Resurf arrangement of the internal vias
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/012Bonding, e.g. electrostatic for strain gauges
DE69624973T 1995-04-12 1996-04-11 Versiegelte Hohlraumanordnung Expired - Lifetime DE69624973T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US42166595A 1995-04-12 1995-04-12

Publications (2)

Publication Number Publication Date
DE69624973D1 DE69624973D1 (de) 2003-01-09
DE69624973T2 true DE69624973T2 (de) 2003-08-28

Family

ID=23671517

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69624973T Expired - Lifetime DE69624973T2 (de) 1995-04-12 1996-04-11 Versiegelte Hohlraumanordnung

Country Status (6)

Country Link
US (1) US5591679A (de)
EP (1) EP0742581B1 (de)
JP (1) JP3073442B2 (de)
KR (1) KR100271386B1 (de)
AT (1) ATE228718T1 (de)
DE (1) DE69624973T2 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10005536B4 (de) * 1999-02-09 2007-11-29 Hitachi, Ltd. Sensor mit eingebauten Schaltungen
DE102014202825B4 (de) 2014-02-17 2023-06-07 Robert Bosch Gmbh Mikromechanisches Bauteil mit hermetischer Durchkontaktierung und Verfahren zur Herstellung eines mikromechanischen Bauteils mit einer hermetischen Durchkontaktierung

Families Citing this family (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6084257A (en) * 1995-05-24 2000-07-04 Lucas Novasensor Single crystal silicon sensor with high aspect ratio and curvilinear structures
US6316796B1 (en) 1995-05-24 2001-11-13 Lucas Novasensor Single crystal silicon sensor with high aspect ratio and curvilinear structures
US6046840A (en) * 1995-06-19 2000-04-04 Reflectivity, Inc. Double substrate reflective spatial light modulator with self-limiting micro-mechanical elements
US5866469A (en) * 1996-06-13 1999-02-02 Boeing North American, Inc. Method of anodic wafer bonding
US6140144A (en) * 1996-08-08 2000-10-31 Integrated Sensing Systems, Inc. Method for packaging microsensors
US5994161A (en) * 1997-09-03 1999-11-30 Motorola, Inc. Temperature coefficient of offset adjusted semiconductor device and method thereof
DE19741428A1 (de) * 1997-09-19 1999-04-01 Siemens Ag Halbleitersensor mit einem Grundkörper und wenigstens einem Verformungskörper
DE19741924C2 (de) * 1997-09-23 2000-03-02 Siemens Ag Verfahren zum elektrochemischen Verbinden und Verbundteil
FR2770339B1 (fr) * 1997-10-27 2003-06-13 Commissariat Energie Atomique Structure munie de contacts electriques formes a travers le substrat de cette structure et procede d'obtention d'une telle structure
DE19800574B4 (de) * 1998-01-09 2013-11-14 Robert Bosch Gmbh Mikromechanisches Bauelement
US6062461A (en) * 1998-06-03 2000-05-16 Delphi Technologies, Inc. Process for bonding micromachined wafers using solder
US6074891A (en) * 1998-06-16 2000-06-13 Delphi Technologies, Inc. Process for verifying a hermetic seal and semiconductor device therefor
US6278167B1 (en) 1998-08-14 2001-08-21 Infineon Technologies Ag Semiconductor sensor with a base element and at least one deformation element
US6534340B1 (en) * 1998-11-18 2003-03-18 Analog Devices, Inc. Cover cap for semiconductor wafer devices
US6232150B1 (en) * 1998-12-03 2001-05-15 The Regents Of The University Of Michigan Process for making microstructures and microstructures made thereby
DE19857550A1 (de) * 1998-12-14 2000-06-21 Bosch Gmbh Robert Verfahren zur Verkapselung von metallischen Mikrobauteilen
EP1234330A2 (de) * 1999-10-19 2002-08-28 Imego Ab Methode für anodisches bonden
US6951797B1 (en) * 1999-10-19 2005-10-04 Imego Ab Method relating to anodic bonding
DE69925837T2 (de) * 1999-10-29 2005-10-27 Sensonor Asa Mikromechanischer Sensor
EP1110905A1 (de) * 1999-12-24 2001-06-27 SensoNor asa Mikro-Elektromechanische Vorrichtung
US6550337B1 (en) 2000-01-19 2003-04-22 Measurement Specialties, Inc. Isolation technique for pressure sensing structure
US6753638B2 (en) * 2000-02-03 2004-06-22 Calient Networks, Inc. Electrostatic actuator for micromechanical systems
DE10014048A1 (de) * 2000-03-23 2001-10-11 Rubitec Gesellschaft Fuer Innovation & Technologie Ruhr Univ Bochum Mbh Druck-und Temperatursensor
EP1307720A1 (de) 2000-07-06 2003-05-07 California Institute Of Technology Drucksensor mit mikrobearbeiteter oberfläche und hochdruckanwendung
US6795605B1 (en) * 2000-08-01 2004-09-21 Cheetah Omni, Llc Micromechanical optical switch
DE10053307B4 (de) * 2000-10-27 2008-06-26 Eads Deutschland Gmbh Kapsel für Mikrosensoren, Verfahren zur Verkapselung von Mikrosensoren und Kapselelement
US6564642B1 (en) 2000-11-02 2003-05-20 Kavlico Corporation Stable differential pressure measuring system
US6809424B2 (en) * 2000-12-19 2004-10-26 Harris Corporation Method for making electronic devices including silicon and LTCC and devices produced thereby
EP1223420A3 (de) 2001-01-16 2003-07-09 Fujikura Ltd. Drucksensor und zugehöriges Herstellungsverfahren
US7145704B1 (en) * 2003-11-25 2006-12-05 Cheetah Omni, Llc Optical logic gate based optical router
US7280014B2 (en) * 2001-03-13 2007-10-09 Rochester Institute Of Technology Micro-electro-mechanical switch and a method of using and making thereof
US6581468B2 (en) 2001-03-22 2003-06-24 Kavlico Corporation Independent-excitation cross-coupled differential-pressure transducer
AU2002303933A1 (en) * 2001-05-31 2002-12-09 Rochester Institute Of Technology Fluidic valves, agitators, and pumps and methods thereof
WO2002101807A1 (en) * 2001-06-11 2002-12-19 Rochester Institute Of Technology Electrostatic interaction systems and methods thereof
DE10129821C2 (de) * 2001-06-13 2003-06-18 X Fab Semiconductor Foundries Verfahren zum Passivieren anodischer Bondgebiete, die über elektrisch aktiven Strukturen von mikroelektromechanischen Systemen angeordnet sind (Microelectromechnical System: MEMS)
KR100514240B1 (ko) 2001-06-21 2005-09-13 미쓰비시덴키 가부시키가이샤 가속도 센서 및 그 제조방법
EP1423713A1 (de) * 2001-08-24 2004-06-02 Honeywell International Inc. Hermetisch abgedichtetes, mikromechanisch hergestelltes elektromechanisches system (mems) mit eindiffundierten leiterbahnen
US7378775B2 (en) * 2001-10-26 2008-05-27 Nth Tech Corporation Motion based, electrostatic power source and methods thereof
US7211923B2 (en) * 2001-10-26 2007-05-01 Nth Tech Corporation Rotational motion based, electrostatic power source and methods thereof
US7110671B1 (en) * 2001-12-03 2006-09-19 Cheetah Omni, Llc Method and apparatus for scheduling communication using a star switching fabric
US6608370B1 (en) * 2002-01-28 2003-08-19 Motorola, Inc. Semiconductor wafer having a thin die and tethers and methods of making the same
GB0302271D0 (en) * 2003-01-31 2003-03-05 Melexis Nv Integrated pressure and acceleration measurement device and a method of manufacture thereof
CN1307683C (zh) * 2003-08-22 2007-03-28 沈阳仪表科学研究院 一种传感器小间隙非粘连静电封接方法
JP4380264B2 (ja) * 2003-08-25 2009-12-09 カシオ計算機株式会社 接合基板及び基板の接合方法
US7217582B2 (en) 2003-08-29 2007-05-15 Rochester Institute Of Technology Method for non-damaging charge injection and a system thereof
US7287328B2 (en) * 2003-08-29 2007-10-30 Rochester Institute Of Technology Methods for distributed electrode injection
EP1522521B1 (de) 2003-10-10 2015-12-09 Infineon Technologies AG Kapazitiver Sensor
US6949807B2 (en) * 2003-12-24 2005-09-27 Honeywell International, Inc. Signal routing in a hermetically sealed MEMS device
DE102004003413A1 (de) * 2004-01-23 2005-08-11 Robert Bosch Gmbh Verfahren zum Verpacken von Halbleiterchips und entsprechende Halbleiterchipanordnung
US20050172717A1 (en) * 2004-02-06 2005-08-11 General Electric Company Micromechanical device with thinned cantilever structure and related methods
US8581308B2 (en) * 2004-02-19 2013-11-12 Rochester Institute Of Technology High temperature embedded charge devices and methods thereof
US20050205951A1 (en) * 2004-03-18 2005-09-22 Honeywell Internatioanl, Inc. Flip chip bonded micro-electromechanical system (MEMS) device
US20060037398A1 (en) * 2004-08-19 2006-02-23 Rich David B Method for making an impact detector
NO321281B1 (no) * 2004-09-15 2006-04-18 Sintef Infrarod kilde
FR2881224B1 (fr) * 2005-01-21 2007-11-23 Auxitrol Sa Sa Ensemble de detection de la pression absolue d'un fluide
US20060202304A1 (en) * 2005-03-11 2006-09-14 Orr Raymond K Integrated circuit with temperature-controlled component
US7470971B2 (en) * 2005-05-13 2008-12-30 Sarnoff Corporation Anodically bonded ultra-high-vacuum cell
US7622782B2 (en) * 2005-08-24 2009-11-24 General Electric Company Pressure sensors and methods of making the same
US20070074731A1 (en) * 2005-10-05 2007-04-05 Nth Tech Corporation Bio-implantable energy harvester systems and methods thereof
WO2007042336A2 (en) * 2005-10-14 2007-04-19 Stmicroelectronics S.R.L. Substrate-level assembly for an integrated device, manufacturing process thereof and related integrated device
US7420817B2 (en) 2006-01-09 2008-09-02 Honeywell International Inc. MEMS device seal using liquid crystal polymer
DE102007002725A1 (de) 2007-01-18 2008-07-31 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gehäuse für in mobilen Anwendungen eingesetzte mikromechanische und mikrooptische Bauelemente
EP1953516B1 (de) * 2007-01-31 2011-03-09 Infineon Technologies AG Mikromechanischer Drucksensor
JP5142742B2 (ja) * 2007-02-16 2013-02-13 株式会社デンソー 圧力センサおよびその製造方法
US20080277747A1 (en) * 2007-05-08 2008-11-13 Nazir Ahmad MEMS device support structure for sensor packaging
DE102007034888B3 (de) * 2007-07-16 2009-01-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mikrosystem und Verfahren zum Herstellen eines Mikrosystems
US7644625B2 (en) * 2007-12-14 2010-01-12 Honeywell International Inc. Differential pressure sense die based on silicon piezoresistive technology
US8130506B2 (en) * 2008-06-19 2012-03-06 Infineon Technologies Ag Sensor module
US8643127B2 (en) * 2008-08-21 2014-02-04 S3C, Inc. Sensor device packaging
EP2166330A1 (de) * 2008-09-22 2010-03-24 GE Infrastructure Sensing, Inc. Miniaturdruckwandler mit länglichem Basiswafer und einsetzbar bei hohen Temperaturen
US7775119B1 (en) * 2009-03-03 2010-08-17 S3C, Inc. Media-compatible electrically isolated pressure sensor for high temperature applications
EP2252077B1 (de) 2009-05-11 2012-07-11 STMicroelectronics Srl Anordnung eines kapazitiven mikroelektromechanischen Akustikwandlers und Verpackung dafür
IT1394898B1 (it) * 2009-06-03 2012-07-20 St Microelectronics Rousset Giroscopio microelettromeccanico con attuazione a controllo di posizione e metodo per il controllo di un giroscopio microelettromeccanico
US7998777B1 (en) * 2010-12-15 2011-08-16 General Electric Company Method for fabricating a sensor
FR3003246B1 (fr) 2013-03-13 2017-12-22 Commissariat Energie Atomique Procede d'encapsulation de micro-dispositif par scellement anodique
JP5783297B2 (ja) * 2013-08-06 2015-09-24 株式会社デンソー 力学量センサ
US9470593B2 (en) 2013-09-12 2016-10-18 Honeywell International Inc. Media isolated pressure sensor
US9102512B2 (en) 2013-10-04 2015-08-11 Analog Devices, Inc. Sealed MEMS devices with multiple chamber pressures
US9764946B2 (en) 2013-10-24 2017-09-19 Analog Devices, Inc. MEMs device with outgassing shield
EP3092499B1 (de) * 2013-12-30 2018-10-31 Robert Bosch GmbH Robuste trägheitssensoren
CN103792036B (zh) * 2014-03-05 2016-01-20 中国电子科技集团公司第三十八研究所 气压与加速度传感器相集成的mems芯片及其制作方法
US10032936B2 (en) 2015-05-29 2018-07-24 Seiko Epson Corporation Method for manufacturing resistive element, method for manufacturing pressure sensor element, pressure sensor element, pressure sensor, altimeter, electronic apparatus, and moving object
JP2017053742A (ja) * 2015-09-10 2017-03-16 セイコーエプソン株式会社 電子デバイスの製造方法、電子デバイス、電子機器、および移動体
US10446331B2 (en) 2015-09-22 2019-10-15 Analog Devices, Inc. Wafer-capped rechargeable power source
US20170089792A1 (en) * 2015-09-28 2017-03-30 Merit Medical Systems, Inc. Dampened pressure port
EP3211393A1 (de) * 2016-02-29 2017-08-30 ETH Zürich Mems-vorrichtung mit einer freigesetzten vorrichtungsschicht als membran
IT201700103489A1 (it) 2017-09-15 2019-03-15 St Microelectronics Srl Metodo di fabbricazione di una membrana filtrante sottile, dispositivo trasduttore acustico includente la membrana filtrante, metodo di assemblaggio del dispositivo trasduttore acustico e sistema elettronico
KR101985946B1 (ko) * 2018-11-21 2019-06-04 호산엔지니어링(주) Msg를 이용한 로드셀 장치
US20210020455A1 (en) * 2019-07-17 2021-01-21 Nanya Technology Corporation Conductive via structure

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4023562A (en) * 1975-09-02 1977-05-17 Case Western Reserve University Miniature pressure transducer for medical use and assembly method
JPS54131892A (en) * 1978-04-05 1979-10-13 Hitachi Ltd Semiconductor pressure converter
JPS5544786A (en) * 1978-09-27 1980-03-29 Hitachi Ltd Pressure sensor
JPH0712086B2 (ja) * 1984-01-27 1995-02-08 株式会社日立製作所 ダイヤフラムセンサの製造方法
US4975390A (en) * 1986-12-18 1990-12-04 Nippondenso Co. Ltd. Method of fabricating a semiconductor pressure sensor
JPH0810170B2 (ja) * 1987-03-06 1996-01-31 株式会社日立製作所 半導体絶対圧力センサの製造方法
JPH05273231A (ja) * 1992-03-27 1993-10-22 Toyoda Mach Works Ltd 容量型加速度センサ
JP3257272B2 (ja) * 1994-09-05 2002-02-18 株式会社デンソー 力学量センサおよびその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10005536B4 (de) * 1999-02-09 2007-11-29 Hitachi, Ltd. Sensor mit eingebauten Schaltungen
DE102014202825B4 (de) 2014-02-17 2023-06-07 Robert Bosch Gmbh Mikromechanisches Bauteil mit hermetischer Durchkontaktierung und Verfahren zur Herstellung eines mikromechanischen Bauteils mit einer hermetischen Durchkontaktierung

Also Published As

Publication number Publication date
EP0742581A2 (de) 1996-11-13
DE69624973D1 (de) 2003-01-09
EP0742581A3 (de) 1997-05-02
US5591679A (en) 1997-01-07
KR100271386B1 (ko) 2001-01-15
JPH08306936A (ja) 1996-11-22
EP0742581B1 (de) 2002-11-27
JP3073442B2 (ja) 2000-08-07
KR960037894A (ko) 1996-11-19
ATE228718T1 (de) 2002-12-15

Similar Documents

Publication Publication Date Title
DE69624973D1 (de) Versiegelte Hohlraumanordnung
TW376556B (en) Semiconductor package, and semiconductor device and their manufacture
SG76632A1 (en) Semiconductor device
WO2003041174A1 (fr) Capteur d'images a semi-conducteur et procede de fabrication associe
WO2005017954A3 (en) Wafer-level sealed microdevice having trench isolation and methods for making the same
DE60141748D1 (de) Statisches relais und dieses verwendendes kommunikationsgerät
TW374249B (en) TFT array and a method for manufacturing the same and a method for manufacturing liquid crystal display using the same
AU2002351771A1 (en) Semiconductor structure with one or more through-holes
DE69601218T2 (de) Elektrische differentialschutzvorrichtung mit prüfkreis
EP1267401A3 (de) Halbleiter und seine Herstellung
WO1997006660A3 (en) Surface mount conductive polymer devices and method for manufacturing such devices
TW369714B (en) Electrical contact to buried SOI structures
EP0809289A3 (de) Deckelluftbrücke für integrierte Schaltung
TW356569B (en) Bulk silicon voltage plane for SOI applications
EP0975072A3 (de) Vorrichtung mit einer optischen Funktion und speziellen Verbindungselektroden und Herstellungsverfahren
EP0780893A3 (de) Halbleiter und seine Herstellung
DE69705676D1 (de) Abgedichtete elektrische Verbindungsanordnung
DE69020760T2 (de) Elektrische Halbleiter-Leistungskonvertierungseinrichtung.
SG77704A1 (en) Semiconductor device and method of fabricating the same
WO1999019906A3 (en) Method and apparatus for packaging high temperature solid state electronic devices
DE69721272D1 (de) Elektrische Isolierung optoelektronischer Bauelemente
DE69601008T2 (de) Abgedichtete elektrische Verbinderanordnung
WO1999022368A3 (en) Magnetic field sensor comprising a spin-tunnel junction
EP1234330A2 (de) Methode für anodisches bonden
JPH04307769A (ja) 電子デバイス及びその形成方法

Legal Events

Date Code Title Description
8364 No opposition during term of opposition