DE69626099D1 - Leseverstärker mit Verstärkungsmodulation, insbesondere für Speicheranordnungen - Google Patents

Leseverstärker mit Verstärkungsmodulation, insbesondere für Speicheranordnungen

Info

Publication number
DE69626099D1
DE69626099D1 DE69626099T DE69626099T DE69626099D1 DE 69626099 D1 DE69626099 D1 DE 69626099D1 DE 69626099 T DE69626099 T DE 69626099T DE 69626099 T DE69626099 T DE 69626099T DE 69626099 D1 DE69626099 D1 DE 69626099D1
Authority
DE
Germany
Prior art keywords
sense amplifiers
gain modulation
memory arrangements
arrangements
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69626099T
Other languages
English (en)
Other versions
DE69626099T2 (de
Inventor
Luigi Pascucci
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69626099D1 publication Critical patent/DE69626099D1/de
Publication of DE69626099T2 publication Critical patent/DE69626099T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
DE69626099T 1996-03-29 1996-03-29 Leseverstärker mit Verstärkungsmodulation, insbesondere für Speicheranordnungen Expired - Fee Related DE69626099T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP96830164A EP0798732B1 (de) 1996-03-29 1996-03-29 Leseverstärker mit Verstärkungsmodulation, insbesondere für Speicheranordnungen

Publications (2)

Publication Number Publication Date
DE69626099D1 true DE69626099D1 (de) 2003-03-13
DE69626099T2 DE69626099T2 (de) 2003-11-27

Family

ID=8225853

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69626099T Expired - Fee Related DE69626099T2 (de) 1996-03-29 1996-03-29 Leseverstärker mit Verstärkungsmodulation, insbesondere für Speicheranordnungen

Country Status (3)

Country Link
US (2) US5901087A (de)
EP (1) EP0798732B1 (de)
DE (1) DE69626099T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU7706198A (en) 1997-05-30 1998-12-30 Micron Technology, Inc. 256 meg dynamic random access memory
IT1295910B1 (it) * 1997-10-31 1999-05-28 Sgs Thomson Microelectronics Circuito di lettura per memorie non volatili
EP0961285B1 (de) * 1998-05-29 2003-12-17 STMicroelectronics S.r.l. Anordnung und Verfahren zum Lesen von nichtflüchtigen Speicherzellen
KR100287884B1 (ko) * 1998-11-26 2001-05-02 김영환 반도체 메모리소자의 센싱회로 및 그를 이용한센싱방법
US6424181B1 (en) * 1999-02-17 2002-07-23 Elbrus International Limited High-speed low-power sense amplifying half-latch and apparatus thereof for small-swing differential logic (SSDL)
US6507525B1 (en) 2000-08-25 2003-01-14 Micron Technology, Inc. Differential sensing in a memory
US6496434B1 (en) * 2000-08-25 2002-12-17 Micron Technology Inc. Differential sensing in a memory using two cycle pre-charge
US6519197B2 (en) * 2000-08-30 2003-02-11 Micron Technology, Inc. Sense amplifier with improved read access
US6608786B2 (en) 2001-03-30 2003-08-19 Intel Corporation Apparatus and method for a memory storage cell leakage cancellation scheme
US6930516B2 (en) * 2001-05-30 2005-08-16 Agere Systems Inc. Comparator circuits having non-complementary input structures
JP4075777B2 (ja) * 2003-11-19 2008-04-16 沖電気工業株式会社 コンパレータ回路
CN105719679B (zh) * 2014-12-01 2018-02-02 中国科学院微电子研究所 灵敏放大器及一种信号处理的方法
JP2018156697A (ja) * 2017-03-15 2018-10-04 東芝メモリ株式会社 半導体記憶装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4551641A (en) * 1983-11-23 1985-11-05 Motorola, Inc. Sense amplifier
US4719602A (en) * 1985-02-07 1988-01-12 Visic, Inc. Memory with improved column access
US4694205A (en) * 1985-06-03 1987-09-15 Advanced Micro Devices, Inc. Midpoint sense amplification scheme for a CMOS DRAM
US5029136A (en) * 1987-11-25 1991-07-02 Texas Instruments Incorporated High-speed DRAM sense amp with high noise immunity
US4972374A (en) * 1989-12-27 1990-11-20 Motorola, Inc. Output amplifying stage with power saving feature
US5491434A (en) * 1994-12-05 1996-02-13 Motorola, Inc. Circuit and method of differential amplitude detection
EP0747903B1 (de) * 1995-04-28 2002-04-10 STMicroelectronics S.r.l. Leseschaltung für Speicherzellen mit niedriger Versorgungsspannung
US5668765A (en) * 1996-06-06 1997-09-16 Philips Electronics North America Corporation Charge transfer sense amplifier

Also Published As

Publication number Publication date
DE69626099T2 (de) 2003-11-27
US5901087A (en) 1999-05-04
EP0798732B1 (de) 2003-02-05
EP0798732A1 (de) 1997-10-01
US6078523A (en) 2000-06-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee