DE69630875D1 - Neuartige logikfamilie mit zweipoligen chalkogenidschaltern als logische gatter - Google Patents

Neuartige logikfamilie mit zweipoligen chalkogenidschaltern als logische gatter

Info

Publication number
DE69630875D1
DE69630875D1 DE69630875T DE69630875T DE69630875D1 DE 69630875 D1 DE69630875 D1 DE 69630875D1 DE 69630875 T DE69630875 T DE 69630875T DE 69630875 T DE69630875 T DE 69630875T DE 69630875 D1 DE69630875 D1 DE 69630875D1
Authority
DE
Germany
Prior art keywords
bipolar
logical gate
new logic
logic family
chalcogenide switches
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69630875T
Other languages
English (en)
Other versions
DE69630875T2 (de
Inventor
R Ovshinsky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of DE69630875D1 publication Critical patent/DE69630875D1/de
Application granted granted Critical
Publication of DE69630875T2 publication Critical patent/DE69630875T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
DE69630875T 1995-02-10 1996-01-17 Neuartige logikfamilie mit zweipoligen chalkogenidschaltern als logische gatter Expired - Fee Related DE69630875T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/386,902 US5543737A (en) 1995-02-10 1995-02-10 Logical operation circuit employing two-terminal chalcogenide switches
US386902 1995-02-10
PCT/US1996/000602 WO1996024985A1 (en) 1995-02-10 1996-01-17 A novel logic family employing two-terminal chalcogenide switches as the logic gates therein

Publications (2)

Publication Number Publication Date
DE69630875D1 true DE69630875D1 (de) 2004-01-08
DE69630875T2 DE69630875T2 (de) 2004-09-02

Family

ID=23527554

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69630875T Expired - Fee Related DE69630875T2 (de) 1995-02-10 1996-01-17 Neuartige logikfamilie mit zweipoligen chalkogenidschaltern als logische gatter

Country Status (7)

Country Link
US (1) US5543737A (de)
EP (1) EP0809888B1 (de)
KR (1) KR100460941B1 (de)
AU (1) AU4700796A (de)
CA (1) CA2211438C (de)
DE (1) DE69630875T2 (de)
WO (1) WO1996024985A1 (de)

Families Citing this family (97)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6140838A (en) * 1995-04-21 2000-10-31 Johnson; Mark B. High density and high speed magneto-electronic logic family
US6741494B2 (en) * 1995-04-21 2004-05-25 Mark B. Johnson Magnetoelectronic memory element with inductively coupled write wires
US5714768A (en) * 1995-10-24 1998-02-03 Energy Conversion Devices, Inc. Second-layer phase change memory array on top of a logic device
US5694054A (en) * 1995-11-28 1997-12-02 Energy Conversion Devices, Inc. Integrated drivers for flat panel displays employing chalcogenide logic elements
US7935951B2 (en) * 1996-10-28 2011-05-03 Ovonyx, Inc. Composite chalcogenide materials and devices
US6555860B2 (en) 2000-09-29 2003-04-29 Intel Corporation Compositionally modified resistive electrode
US6638820B2 (en) 2001-02-08 2003-10-28 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices
US6727192B2 (en) 2001-03-01 2004-04-27 Micron Technology, Inc. Methods of metal doping a chalcogenide material
US6734455B2 (en) 2001-03-15 2004-05-11 Micron Technology, Inc. Agglomeration elimination for metal sputter deposition of chalcogenides
US7102150B2 (en) 2001-05-11 2006-09-05 Harshfield Steven T PCRAM memory cell and method of making same
US6951805B2 (en) 2001-08-01 2005-10-04 Micron Technology, Inc. Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry
US6737312B2 (en) 2001-08-27 2004-05-18 Micron Technology, Inc. Method of fabricating dual PCRAM cells sharing a common electrode
US6955940B2 (en) 2001-08-29 2005-10-18 Micron Technology, Inc. Method of forming chalcogenide comprising devices
US6784018B2 (en) 2001-08-29 2004-08-31 Micron Technology, Inc. Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry
US6881623B2 (en) 2001-08-29 2005-04-19 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device
US20030047765A1 (en) * 2001-08-30 2003-03-13 Campbell Kristy A. Stoichiometry for chalcogenide glasses useful for memory devices and method of formation
US6815818B2 (en) 2001-11-19 2004-11-09 Micron Technology, Inc. Electrode structure for use in an integrated circuit
US6791859B2 (en) 2001-11-20 2004-09-14 Micron Technology, Inc. Complementary bit PCRAM sense amplifier and method of operation
US6873538B2 (en) 2001-12-20 2005-03-29 Micron Technology, Inc. Programmable conductor random access memory and a method for writing thereto
US6909656B2 (en) 2002-01-04 2005-06-21 Micron Technology, Inc. PCRAM rewrite prevention
US20030143782A1 (en) 2002-01-31 2003-07-31 Gilton Terry L. Methods of forming germanium selenide comprising devices and methods of forming silver selenide comprising structures
US6867064B2 (en) 2002-02-15 2005-03-15 Micron Technology, Inc. Method to alter chalcogenide glass for improved switching characteristics
US6791885B2 (en) 2002-02-19 2004-09-14 Micron Technology, Inc. Programmable conductor random access memory and method for sensing same
US6809362B2 (en) 2002-02-20 2004-10-26 Micron Technology, Inc. Multiple data state memory cell
US7151273B2 (en) 2002-02-20 2006-12-19 Micron Technology, Inc. Silver-selenide/chalcogenide glass stack for resistance variable memory
US6891749B2 (en) 2002-02-20 2005-05-10 Micron Technology, Inc. Resistance variable ‘on ’ memory
US7087919B2 (en) 2002-02-20 2006-08-08 Micron Technology, Inc. Layered resistance variable memory device and method of fabrication
US6937528B2 (en) 2002-03-05 2005-08-30 Micron Technology, Inc. Variable resistance memory and method for sensing same
US6849868B2 (en) 2002-03-14 2005-02-01 Micron Technology, Inc. Methods and apparatus for resistance variable material cells
US6858482B2 (en) 2002-04-10 2005-02-22 Micron Technology, Inc. Method of manufacture of programmable switching circuits and memory cells employing a glass layer
US6864500B2 (en) 2002-04-10 2005-03-08 Micron Technology, Inc. Programmable conductor memory cell structure
US6855975B2 (en) 2002-04-10 2005-02-15 Micron Technology, Inc. Thin film diode integrated with chalcogenide memory cell
US6890790B2 (en) 2002-06-06 2005-05-10 Micron Technology, Inc. Co-sputter deposition of metal-doped chalcogenides
US6825135B2 (en) 2002-06-06 2004-11-30 Micron Technology, Inc. Elimination of dendrite formation during metal/chalcogenide glass deposition
JP4027282B2 (ja) * 2002-07-10 2007-12-26 キヤノン株式会社 インクジェット記録ヘッド
US7015494B2 (en) 2002-07-10 2006-03-21 Micron Technology, Inc. Assemblies displaying differential negative resistance
US7209378B2 (en) 2002-08-08 2007-04-24 Micron Technology, Inc. Columnar 1T-N memory cell structure
US7018863B2 (en) 2002-08-22 2006-03-28 Micron Technology, Inc. Method of manufacture of a resistance variable memory cell
US7294527B2 (en) 2002-08-29 2007-11-13 Micron Technology Inc. Method of forming a memory cell
US6867996B2 (en) 2002-08-29 2005-03-15 Micron Technology, Inc. Single-polarity programmable resistance-variable memory element
US6831019B1 (en) 2002-08-29 2004-12-14 Micron Technology, Inc. Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes
US7010644B2 (en) 2002-08-29 2006-03-07 Micron Technology, Inc. Software refreshed memory device and method
US6864521B2 (en) * 2002-08-29 2005-03-08 Micron Technology, Inc. Method to control silver concentration in a resistance variable memory element
US7364644B2 (en) 2002-08-29 2008-04-29 Micron Technology, Inc. Silver selenide film stoichiometry and morphology control in sputter deposition
US6867114B2 (en) 2002-08-29 2005-03-15 Micron Technology Inc. Methods to form a memory cell with metal-rich metal chalcogenide
US7163837B2 (en) 2002-08-29 2007-01-16 Micron Technology, Inc. Method of forming a resistance variable memory element
US6856002B2 (en) * 2002-08-29 2005-02-15 Micron Technology, Inc. Graded GexSe100-x concentration in PCRAM
US6985377B2 (en) * 2002-10-15 2006-01-10 Nanochip, Inc. Phase change media for high density data storage
US7085155B2 (en) * 2003-03-10 2006-08-01 Energy Conversion Devices, Inc. Secured phase-change devices
US7227170B2 (en) * 2003-03-10 2007-06-05 Energy Conversion Devices, Inc. Multiple bit chalcogenide storage device
US6813178B2 (en) 2003-03-12 2004-11-02 Micron Technology, Inc. Chalcogenide glass constant current device, and its method of fabrication and operation
US7022579B2 (en) 2003-03-14 2006-04-04 Micron Technology, Inc. Method for filling via with metal
US7050327B2 (en) 2003-04-10 2006-05-23 Micron Technology, Inc. Differential negative resistance memory
US6930909B2 (en) * 2003-06-25 2005-08-16 Micron Technology, Inc. Memory device and methods of controlling resistance variation and resistance profile drift
US6961277B2 (en) 2003-07-08 2005-11-01 Micron Technology, Inc. Method of refreshing a PCRAM memory device
US7061004B2 (en) 2003-07-21 2006-06-13 Micron Technology, Inc. Resistance variable memory elements and methods of formation
US6903361B2 (en) 2003-09-17 2005-06-07 Micron Technology, Inc. Non-volatile memory structure
US7153721B2 (en) * 2004-01-28 2006-12-26 Micron Technology, Inc. Resistance variable memory elements based on polarized silver-selenide network growth
US7105864B2 (en) * 2004-01-29 2006-09-12 Micron Technology, Inc. Non-volatile zero field splitting resonance memory
US7583551B2 (en) 2004-03-10 2009-09-01 Micron Technology, Inc. Power management control and controlling memory refresh operations
US7098068B2 (en) 2004-03-10 2006-08-29 Micron Technology, Inc. Method of forming a chalcogenide material containing device
US7301887B2 (en) * 2004-04-16 2007-11-27 Nanochip, Inc. Methods for erasing bit cells in a high density data storage device
US20050232061A1 (en) 2004-04-16 2005-10-20 Rust Thomas F Systems for writing and reading highly resolved domains for high density data storage
US7379412B2 (en) 2004-04-16 2008-05-27 Nanochip, Inc. Methods for writing and reading highly resolved domains for high density data storage
US7326950B2 (en) 2004-07-19 2008-02-05 Micron Technology, Inc. Memory device with switching glass layer
US7190048B2 (en) 2004-07-19 2007-03-13 Micron Technology, Inc. Resistance variable memory device and method of fabrication
US7354793B2 (en) 2004-08-12 2008-04-08 Micron Technology, Inc. Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element
US7365411B2 (en) 2004-08-12 2008-04-29 Micron Technology, Inc. Resistance variable memory with temperature tolerant materials
US7151688B2 (en) 2004-09-01 2006-12-19 Micron Technology, Inc. Sensing of resistance variable memory devices
US7374174B2 (en) 2004-12-22 2008-05-20 Micron Technology, Inc. Small electrode for resistance variable devices
US7317200B2 (en) 2005-02-23 2008-01-08 Micron Technology, Inc. SnSe-based limited reprogrammable cell
US7427770B2 (en) 2005-04-22 2008-09-23 Micron Technology, Inc. Memory array for increased bit density
US7709289B2 (en) 2005-04-22 2010-05-04 Micron Technology, Inc. Memory elements having patterned electrodes and method of forming the same
US7269044B2 (en) 2005-04-22 2007-09-11 Micron Technology, Inc. Method and apparatus for accessing a memory array
US7269079B2 (en) 2005-05-16 2007-09-11 Micron Technology, Inc. Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory
US7233520B2 (en) 2005-07-08 2007-06-19 Micron Technology, Inc. Process for erasing chalcogenide variable resistance memory bits
US7274034B2 (en) 2005-08-01 2007-09-25 Micron Technology, Inc. Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
US7317567B2 (en) 2005-08-02 2008-01-08 Micron Technology, Inc. Method and apparatus for providing color changing thin film material
US7332735B2 (en) 2005-08-02 2008-02-19 Micron Technology, Inc. Phase change memory cell and method of formation
US7579615B2 (en) 2005-08-09 2009-08-25 Micron Technology, Inc. Access transistor for memory device
US7767992B2 (en) * 2005-08-09 2010-08-03 Ovonyx, Inc. Multi-layer chalcogenide devices
US7525117B2 (en) * 2005-08-09 2009-04-28 Ovonyx, Inc. Chalcogenide devices and materials having reduced germanium or telluruim content
US7304368B2 (en) 2005-08-11 2007-12-04 Micron Technology, Inc. Chalcogenide-based electrokinetic memory element and method of forming the same
US7251154B2 (en) 2005-08-15 2007-07-31 Micron Technology, Inc. Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
US7277313B2 (en) 2005-08-31 2007-10-02 Micron Technology, Inc. Resistance variable memory element with threshold device and method of forming the same
US7547906B2 (en) * 2006-05-22 2009-06-16 Ovonyx, Inc. Multi-functional chalcogenide electronic devices having gain
US7560723B2 (en) 2006-08-29 2009-07-14 Micron Technology, Inc. Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
US7895560B2 (en) * 2006-10-02 2011-02-22 William Stuart Lovell Continuous flow instant logic binary circuitry actively structured by code-generated pass transistor interconnects
US7969769B2 (en) * 2007-03-15 2011-06-28 Ovonyx, Inc. Multi-terminal chalcogenide logic circuits
US8467236B2 (en) 2008-08-01 2013-06-18 Boise State University Continuously variable resistor
US20100090189A1 (en) * 2008-09-15 2010-04-15 Savransky Semyon D Nanoscale electrical device
US8148707B2 (en) 2008-12-30 2012-04-03 Stmicroelectronics S.R.L. Ovonic threshold switch film composition for TSLAGS material
US8377741B2 (en) * 2008-12-30 2013-02-19 Stmicroelectronics S.R.L. Self-heating phase change memory cell architecture
US8384429B2 (en) 2010-04-16 2013-02-26 Infineon Technologies Ag Integrated circuit and method for manufacturing same
US9336180B2 (en) 2011-04-07 2016-05-10 Via Technologies, Inc. Microprocessor that makes 64-bit general purpose registers available in MSR address space while operating in non-64-bit mode
KR102544160B1 (ko) * 2016-09-19 2023-06-16 에스케이하이닉스 주식회사 전압 제어 장치
US11322202B1 (en) 2021-01-11 2022-05-03 International Business Machines Corporation Semiconductor logic circuits including a non-volatile memory cell

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL61678A (en) * 1979-12-13 1984-04-30 Energy Conversion Devices Inc Programmable cell and programmable electronic arrays comprising such cells
US4731610A (en) * 1986-01-21 1988-03-15 Ovonic Imaging Systems, Inc. Balanced drive electronic matrix system and method of operating the same
US4782340A (en) * 1986-08-22 1988-11-01 Energy Conversion Devices, Inc. Electronic arrays having thin film line drivers
US4845533A (en) * 1986-08-22 1989-07-04 Energy Conversion Devices, Inc. Thin film electrical devices with amorphous carbon electrodes and method of making same
JPS63181486A (ja) * 1987-01-23 1988-07-26 Hiroshima Univ 半導体発光装置

Also Published As

Publication number Publication date
KR100460941B1 (ko) 2005-04-08
EP0809888A4 (de) 1999-09-08
EP0809888A1 (de) 1997-12-03
EP0809888B1 (de) 2003-11-26
KR19980701855A (ko) 1998-06-25
CA2211438C (en) 2004-11-23
DE69630875T2 (de) 2004-09-02
CA2211438A1 (en) 1996-08-15
US5543737A (en) 1996-08-06
AU4700796A (en) 1996-08-27
WO1996024985A1 (en) 1996-08-15

Similar Documents

Publication Publication Date Title
DE69630875D1 (de) Neuartige logikfamilie mit zweipoligen chalkogenidschaltern als logische gatter
DE69819278D1 (de) Integrierte Halbleiterschaltung mit logischem Gatter mit drei Betriebszuständen
DE69428107D1 (de) Atm-vermittlung mit kontrolliertem zugang
DE69023883T2 (de) Umkehrkreuzungsschalter mit verteilter Steuerung.
DE629098T1 (de) Haushaltszähler.
DE69515621D1 (de) Referenzspannungsquelle mit Verschiebung um eine Schwellenspannung
DE59511001D1 (de) Polycarbonat-Formmassen mit verbesserter Zähigkeit
DE69228511T2 (de) Schalter mit heterogenen Toren
DE69515370T2 (de) Türschloss mit integriertem Schalter
DE69519650D1 (de) Plattenspieler von Wechseltyp
DE69605139T2 (de) Kunststoff Türklinkenhebel, mit wartungsfähigem Stabhalter
DE59604764D1 (de) Drehknopf mit zwei Betätigungsfunktionen
DE69505255D1 (de) Staubsauger mit fuzzy logic steuerung
DE69428893T2 (de) Aktive gleichspannungsgekoppelte pull-down ecl-schaltung mit selbstjustierende treibfähigkeit
DE69325875D1 (de) Schaltung mit geschalteten Kapazitäten
DE69614372D1 (de) Lautstärkeregelung mit doppelter wirkungsweise
DE69721865D1 (de) Statischer Schalter mit drei Schaltzuständen
DE29510696U1 (de) Berührungsloser Rotationsschalter mit mindestens drei Schaltpositionen
DE59502555D1 (de) Schalter mit einem als Bipolartransistor ausgebildeten ersten Schaltelement
DE59002883D1 (de) Schalter mit mehreren schaltstellungen.
DE9418245U1 (de) Elektromechanisches Schaltschloß mit beiderseitig unterschiedlichen Schaltfunktionen
DE29613016U1 (de) Geschirrspülmaschine mit einem Enthärter
DE69519255T2 (de) Mehrprogramm-waschmaschine mit einem elektromechanischen Schaltwerk und einer digitalen Steuereinheit
KR960024595U (ko) 스위칭센싱로직
DE59709797D1 (de) Formgegenstand mit reaktiven funktionen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee