DE69631562D1 - GaN-System-Halbleiterlaservorrichtung - Google Patents

GaN-System-Halbleiterlaservorrichtung

Info

Publication number: DE69631562D1
Authority: DE; Germany
Prior art keywords: semiconductor laser; laser device; system semiconductor; gan system; gan
Prior art date: 1995-05-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE69631562T

Other languages

English (en)

Other versions

DE69631562T2 (de

Inventor

Hiroaki Fujii

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Renesas Electronics Corp

Original Assignee

NEC Compound Semiconductor Devices Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1995-05-19

Filing date

1996-05-20

Publication date

2004-03-25

1996-05-20 Application filed by NEC Compound Semiconductor Devices Ltd filed Critical NEC Compound Semiconductor Devices Ltd

2004-03-25 Publication of DE69631562D1 publication Critical patent/DE69631562D1/de

2004-12-16 Application granted granted Critical

2004-12-16 Publication of DE69631562T2 publication Critical patent/DE69631562T2/de

2016-05-21 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0213—Sapphire, quartz or diamond based substrates
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth

DE69631562T 1995-05-19 1996-05-20 GaN-System-Halbleiterlaservorrichtung Expired - Lifetime DE69631562T2 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP12187895		1995-05-19
JP12187895A JPH08316582A (ja)	1995-05-19	1995-05-19	半導体レーザ

Publications (2)

Publication Number	Publication Date
DE69631562D1 true DE69631562D1 (de)	2004-03-25
DE69631562T2 DE69631562T2 (de)	2004-12-16

Family

ID=14822166

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69631562T Expired - Lifetime DE69631562T2 (de)	1995-05-19	1996-05-20	GaN-System-Halbleiterlaservorrichtung

Country Status (4)

Country	Link
US (1)	US5742628A (de)
EP (1)	EP0743727B1 (de)
JP (1)	JPH08316582A (de)
DE (1)	DE69631562T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO1997008759A1 (fr) *	1995-08-31	1997-03-06	Kabushiki Kaisha Toshiba	Dispositif emetteur de lumiere bleue et son procede de fabrication
US6103604A (en) *	1997-02-10	2000-08-15	Trw Inc.	High electron mobility transparent conductor
JPH10335750A (ja) *	1997-06-03	1998-12-18	Sony Corp	半導体基板および半導体装置
TW393785B (en) *	1997-09-19	2000-06-11	Siemens Ag	Method to produce many semiconductor-bodies
DE19838810B4 (de) *	1998-08-26	2006-02-09	Osram Opto Semiconductors Gmbh	Verfahren zum Herstellen einer Mehrzahl von Ga(In,Al)N-Leuchtdiodenchips
JP3955367B2 (ja)	1997-09-30	2007-08-08	フィリップスルミレッズライティングカンパニーリミテッドライアビリティカンパニー	光半導体素子およびその製造方法
US6849472B2 (en) *	1997-09-30	2005-02-01	Lumileds Lighting U.S., Llc	Nitride semiconductor device with reduced polarization fields
JP3180743B2 (ja) *	1997-11-17	2001-06-25	日本電気株式会社	窒化化合物半導体発光素子およびその製法
JPH11340576A (ja) *	1998-05-28	1999-12-10	Sumitomo Electric Ind Ltd	窒化ガリウム系半導体デバイス
TW418549B (en) *	1998-06-26	2001-01-11	Sharp Kk	Crystal growth method for nitride semiconductor, nitride semiconductor light emitting device, and method for producing the same
JP3262080B2 (ja) *	1998-09-25	2002-03-04	株式会社村田製作所	半導体発光素子
US6744800B1 (en) *	1998-12-30	2004-06-01	Xerox Corporation	Method and structure for nitride based laser diode arrays on an insulating substrate
JP2001053339A (ja) *	1999-08-11	2001-02-23	Toshiba Corp	半導体発光素子およびその製造方法
US6265322B1 (en) *	1999-09-21	2001-07-24	Agere Systems Guardian Corp.	Selective growth process for group III-nitride-based semiconductors
JP3723434B2 (ja) *	1999-09-24	2005-12-07	三洋電機株式会社	半導体発光素子
JP3929008B2 (ja) *	2000-01-14	2007-06-13	シャープ株式会社	窒化物系化合物半導体発光素子およびその製造方法
DE10025562C1 (de) *	2000-05-24	2002-04-25	Osram Opto Semiconductors Gmbh	Verfahren zur Herstellung einer Nitrid-Schicht auf einem Substrat und mit dem Verfahren hergestelltes Quasisubstrat
JP3761418B2 (ja) *	2001-05-10	2006-03-29	Ｈｏｙａ株式会社	化合物結晶およびその製造法
GB2378039B (en) *	2001-07-27	2003-09-17	Juses Chao	AlInGaN LED Device
US7339255B2 (en) *	2004-08-24	2008-03-04	Kabushiki Kaisha Toshiba	Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes
JP4451371B2 (ja) *	2004-12-20	2010-04-14	シャープ株式会社	窒化物半導体レーザ素子
US20070069225A1 (en) *	2005-09-27	2007-03-29	Lumileds Lighting U.S., Llc	III-V light emitting device
JP2008091962A (ja) *	2007-12-28	2008-04-17	Rohm Co Ltd	半導体発光素子
JP4638958B1 (ja) *	2009-08-20	2011-02-23	株式会社パウデック	半導体素子の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0460710B1 (de) *	1987-01-31	1994-12-07	Toyoda Gosei Co., Ltd.	Galliumnitridartige Halbleiterverbindung und daraus bestehende lichtemittierende Vorrichtung sowie Verfahren zu deren Herstellung
JP3160914B2 (ja) *	1990-12-26	2001-04-25	豊田合成株式会社	窒化ガリウム系化合物半導体レーザダイオード
US5578839A (en) *	1992-11-20	1996-11-26	Nichia Chemical Industries, Ltd.	Light-emitting gallium nitride-based compound semiconductor device
US6083812A (en) *	1993-02-02	2000-07-04	Texas Instruments Incorporated	Heteroepitaxy by large surface steps
US5432808A (en) *	1993-03-15	1995-07-11	Kabushiki Kaisha Toshiba	Compound semicondutor light-emitting device
JP2748354B2 (ja) *	1993-10-21	1998-05-06	日亜化学工業株式会社	窒化ガリウム系化合物半導体チップの製造方法
JPH07249831A (ja) *	1994-03-10	1995-09-26	Hitachi Ltd	結晶成長方法
US5604763A (en) *	1994-04-20	1997-02-18	Toyoda Gosei Co., Ltd.	Group III nitride compound semiconductor laser diode and method for producing same
JPH0818159A (ja) *	1994-04-25	1996-01-19	Hitachi Ltd	半導体レーザ素子及びその作製方法
JP2953326B2 (ja) *	1994-11-30	1999-09-27	日亜化学工業株式会社	窒化ガリウム系化合物半導体レーザ素子の製造方法
JP3523700B2 (ja) *	1995-01-12	2004-04-26	日亜化学工業株式会社	窒化物半導体レーザ素子
JPH08195530A (ja) *	1995-01-18	1996-07-30	Hitachi Ltd	半導体レーザ装置
US5585648A (en) *	1995-02-03	1996-12-17	Tischler; Michael A.	High brightness electroluminescent device, emitting in the green to ultraviolet spectrum, and method of making the same

1995
- 1995-05-19 JP JP12187895A patent/JPH08316582A/ja active Pending
1996
- 1996-05-20 DE DE69631562T patent/DE69631562T2/de not_active Expired - Lifetime
- 1996-05-20 EP EP96108019A patent/EP0743727B1/de not_active Expired - Lifetime
- 1996-05-20 US US08/650,439 patent/US5742628A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0743727B1 (de)	2004-02-18
US5742628A (en)	1998-04-21
EP0743727A1 (de)	1996-11-20
DE69631562T2 (de)	2004-12-16
JPH08316582A (ja)	1996-11-29

Legal Events

Date	Code	Title	Description
2005-03-17	8364	No opposition during term of opposition
2007-07-26	8327	Change in the person/name/address of the patent owner	Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP
2012-08-28	R082	Change of representative	Ref document number: 743727 Country of ref document: EP Representative=s name: SPLANEMANN BARONETZKY KNITTER PATENTANWAELTE R, DE
2012-10-18	R081	Change of applicant/patentee	Ref document number: 743727 Country of ref document: EP Owner name: RENESAS ELECTRONICS CORPORATION, JP Free format text: FORMER OWNER: NEC ELECTRONICS CORP., KAWASAKI, JP Effective date: 20120828
2012-10-18	R082	Change of representative	Ref document number: 743727 Country of ref document: EP Representative=s name: SPLANEMANN BARONETZKY KNITTER PATENTANWAELTE R, DE Effective date: 20120828

Publication	Publication Date	Title
DE69631562D1 (de)	2004-03-25	GaN-System-Halbleiterlaservorrichtung
DE69633203D1 (de)	2004-09-23	Halbleiterlaser-Vorrichtungen
DE69610457D1 (de)	2000-11-02	Halbleitervorrichtung
KR970004020A (ko)	1997-01-29	반도체장치
KR970005998A (ko)	1997-02-19	반도체 장치
DE69608850D1 (de)	2000-07-20	Halbleiterlaser
DE69828942D1 (de)	2005-03-17	Halbleiterlaservorrichtung
DE69606812T2 (de)	2000-08-17	Halbleiterlaser
DE69700573T2 (de)	2000-05-31	Optoelektronische Halbleitervorrichtung
DE69631940D1 (de)	2004-04-29	Halbleitervorrichtung
DE69500600T2 (de)	1998-04-09	Halbleiterlaservorrichtung
DE59607521D1 (de)	2001-09-27	Halbleiter-Bauelement-Konfiguration
DE69423196T2 (de)	2000-08-24	Halbleiterlaservorrichtung
DE69517044T2 (de)	2000-10-26	Halbleiterlaservorrichtung
DE69734384D1 (de)	2005-11-24	Halbleiter-Laservorrichtung
DE19681689T1 (de)	1998-11-05	Gesichertes Halbleiterbauelement
DE69701609T2 (de)	2000-07-20	Halbleiterlaservorrichtung
DE69615331D1 (de)	2001-10-25	Selbstschwingende Halbleiterlaservorrichtung
DE69708582T2 (de)	2002-07-25	Halbleiterlaservorrichtung
DE69815461D1 (de)	2003-07-17	Halbleiterlaservorrichtung
DE69300247D1 (de)	1995-08-17	Halbleiterlaservorrichtung.
DE69404942D1 (de)	1997-09-18	Halbleiterlaservorrichtung
DE69723009D1 (de)	2003-07-31	Halbleiterlaservorrichtung
DE69635334D1 (de)	2005-12-01	Halbleiteranordnung
KR970025773U (ko)	1997-06-20	반도체 장치