DE69637352D1 - Verfahren zur Herstellung einer vertikalen nichtflüchtigen Speicherzelle - Google Patents

Verfahren zur Herstellung einer vertikalen nichtflüchtigen Speicherzelle

Info

Publication number
DE69637352D1
DE69637352D1 DE69637352T DE69637352T DE69637352D1 DE 69637352 D1 DE69637352 D1 DE 69637352D1 DE 69637352 T DE69637352 T DE 69637352T DE 69637352 T DE69637352 T DE 69637352T DE 69637352 D1 DE69637352 D1 DE 69637352D1
Authority
DE
Germany
Prior art keywords
producing
memory cell
nonvolatile memory
vertical nonvolatile
vertical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69637352T
Other languages
English (en)
Other versions
DE69637352T2 (de
Inventor
Youjuang W Liu
Sameer S Haddad
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spansion LLC
Original Assignee
Spansion LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Spansion LLC filed Critical Spansion LLC
Application granted granted Critical
Publication of DE69637352D1 publication Critical patent/DE69637352D1/de
Publication of DE69637352T2 publication Critical patent/DE69637352T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
DE69637352T 1995-08-01 1996-07-31 Verfahren zur Herstellung einer vertikalen nichtflüchtigen Speicherzelle Expired - Lifetime DE69637352T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/510,118 US5945705A (en) 1995-08-01 1995-08-01 Three-dimensional non-volatile memory
US510118 1995-08-01
PCT/US1996/012527 WO1997005655A1 (en) 1995-08-01 1996-07-31 Three-dimensional non-volatile memory

Publications (2)

Publication Number Publication Date
DE69637352D1 true DE69637352D1 (de) 2008-01-17
DE69637352T2 DE69637352T2 (de) 2008-11-13

Family

ID=24029441

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69637352T Expired - Lifetime DE69637352T2 (de) 1995-08-01 1996-07-31 Verfahren zur Herstellung einer vertikalen nichtflüchtigen Speicherzelle

Country Status (6)

Country Link
US (2) US5945705A (de)
EP (1) EP0784867B1 (de)
JP (2) JP3821848B2 (de)
KR (1) KR970706609A (de)
DE (1) DE69637352T2 (de)
WO (1) WO1997005655A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6765257B1 (en) * 1997-07-23 2004-07-20 Texas Instruments Incorporated Implanted vertical source-line under straight stack for flash eprom
US6093606A (en) * 1998-03-05 2000-07-25 Taiwan Semiconductor Manufacturing Company Method of manufacture of vertical stacked gate flash memory device
US6333228B1 (en) * 2000-03-24 2001-12-25 Taiwan Semiconductor Manufacturing Company Method to improve the control of bird's beak profile of poly in split gate flash
US6300199B1 (en) * 2000-05-24 2001-10-09 Micron Technology, Inc. Method of defining at least two different field effect transistor channel lengths using differently angled sidewall segments of a channel defining layer
DE10158564C1 (de) * 2001-11-29 2003-07-17 Infineon Technologies Ag Leiterbahnstruktur für eine integrierte Schaltung und entsprechendes Herstellungsverfahren
DE10220922B4 (de) * 2002-05-10 2006-09-28 Infineon Technologies Ag Flash-Speicherzelle, Anordnung von Flash-Speicherzellen und Verfahren zur Herstellung von Flash-Speicherzellen
TW536797B (en) * 2002-06-24 2003-06-11 Macronix Int Co Ltd Multi-bit memory cell and its manufacturing method
DE10231202A1 (de) * 2002-07-10 2004-02-05 Infineon Technologies Ag Vertikaltransistor-Speicherzelle, Speicherzellen-Anordnung, Verfahren zum Herstellen einer Vertikaltransistor-Speicherzelle und Verfahren zum Betreiben einer Vertikaltransistor-Speicherzelle
US6790752B1 (en) * 2003-02-05 2004-09-14 Advanced Micro Devices, Inc. Methods of controlling VSS implants on memory devices, and system for performing same
US6853031B2 (en) * 2003-04-17 2005-02-08 United Microelectronics Corp. Structure of a trapezoid-triple-gate FET
KR100755058B1 (ko) * 2005-04-04 2007-09-06 주식회사 하이닉스반도체 스텝게이트를 갖는 반도체소자 및 그 제조방법
US20060255412A1 (en) * 2005-05-13 2006-11-16 Nirmal Ramaswamy Enhanced access devices using selective epitaxial silicon over the channel region during the formation of a semiconductor device and systems including same
KR100855992B1 (ko) 2007-04-02 2008-09-02 삼성전자주식회사 경사진 측벽을 갖는 활성 필라를 구비하는 비휘발성 메모리트랜지스터, 이를 구비하는 비휘발성 메모리 어레이 및상기 비휘발성 메모리 트랜지스터의 제조방법
US7933136B2 (en) * 2008-11-07 2011-04-26 Seagate Technology Llc Non-volatile memory cell with multiple resistive sense elements sharing a common switching device
CN102456745B (zh) 2010-10-22 2013-09-04 北京大学 一种快闪存储器及其制备方法和操作方法
WO2023144656A1 (ja) * 2022-01-31 2023-08-03 株式会社半導体エネルギー研究所 表示装置

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3500142A (en) * 1967-06-05 1970-03-10 Bell Telephone Labor Inc Field effect semiconductor apparatus with memory involving entrapment of charge carriers
US4203158A (en) * 1978-02-24 1980-05-13 Intel Corporation Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same
US4267632A (en) * 1979-10-19 1981-05-19 Intel Corporation Process for fabricating a high density electrically programmable memory array
US4698787A (en) * 1984-11-21 1987-10-06 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
US4763177A (en) * 1985-02-19 1988-08-09 Texas Instruments Incorporated Read only memory with improved channel length isolation and method of forming
US5017977A (en) * 1985-03-26 1991-05-21 Texas Instruments Incorporated Dual EPROM cells on trench walls with virtual ground buried bit lines
US4698900A (en) * 1986-03-27 1987-10-13 Texas Instruments Incorporated Method of making a non-volatile memory having dielectric filled trenches
US4814286A (en) * 1987-02-02 1989-03-21 Intel Corporation EEPROM cell with integral select transistor
JP2735193B2 (ja) * 1987-08-25 1998-04-02 株式会社東芝 不揮発性半導体装置及びその製造方法
US4780424A (en) * 1987-09-28 1988-10-25 Intel Corporation Process for fabricating electrically alterable floating gate memory devices
US4849363A (en) * 1988-03-18 1989-07-18 Digital Equipment Corporation Integrated circuit having laser-alterable metallization layer
US5268319A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
GB2232798B (en) * 1989-06-12 1994-02-23 Intel Corp Electrically programmable read-only memory
KR940006094B1 (ko) * 1989-08-17 1994-07-06 삼성전자 주식회사 불휘발성 반도체 기억장치 및 그 제조방법
US5077691A (en) * 1989-10-23 1991-12-31 Advanced Micro Devices, Inc. Flash EEPROM array with negative gate voltage erase operation
US5111270A (en) * 1990-02-22 1992-05-05 Intel Corporation Three-dimensional contactless non-volatile memory cell
US4964080A (en) * 1990-03-09 1990-10-16 Intel Corporation Three-dimensional memory cell with integral select transistor
US5049515A (en) * 1990-03-09 1991-09-17 Intel Corporation, Inc. Method of making a three-dimensional memory cell with integral select transistor
US5087584A (en) * 1990-04-30 1992-02-11 Intel Corporation Process for fabricating a contactless floating gate memory array utilizing wordline trench vias
US5053842A (en) * 1990-05-30 1991-10-01 Seiko Instruments Inc. Semiconductor nonvolatile memory
US5077230A (en) * 1990-08-03 1991-12-31 Intel Corporation Method for improving erase characteristics of buried bit line flash EPROM devices by use of a thin nitride layer formed during field oxide growth
US5102814A (en) * 1990-11-02 1992-04-07 Intel Corporation Method for improving device scalability of buried bit line flash EPROM devices having short reoxidation beaks and shallower junctions
US5235544A (en) * 1990-11-09 1993-08-10 John Caywood Flash EPROM cell and method for operating same
US5103274A (en) * 1990-11-29 1992-04-07 Intel Corporation Self-aligned source process and apparatus
US5120671A (en) * 1990-11-29 1992-06-09 Intel Corporation Process for self aligning a source region with a field oxide region and a polysilicon gate
JPH056977A (ja) * 1990-11-30 1993-01-14 Toshiba Corp ダイナミツク型半導体記憶装置およびその製造方法
JP3454520B2 (ja) * 1990-11-30 2003-10-06 インテル・コーポレーション フラッシュ記憶装置の書込み状態を確認する回路及びその方法
US5343063A (en) * 1990-12-18 1994-08-30 Sundisk Corporation Dense vertical programmable read only memory cell structure and processes for making them
US5245570A (en) * 1990-12-21 1993-09-14 Intel Corporation Floating gate non-volatile memory blocks and select transistors
EP0509697B1 (de) * 1991-04-18 1999-06-09 National Semiconductor Corporation Gestapeltes Ätzverfahren für Koppelpunkt-EPROM-Matrizen
US5180680A (en) * 1991-05-17 1993-01-19 United Microelectronics Corporation Method of fabricating electrically erasable read only memory cell
US5258634A (en) * 1991-05-17 1993-11-02 United Microelectronics Corporation Electrically erasable read only memory cell array having elongated control gate in a trench
JPH0567791A (ja) * 1991-06-20 1993-03-19 Mitsubishi Electric Corp 電気的に書込および消去可能な半導体記憶装置およびその製造方法
EP0550770B1 (de) * 1991-07-26 1997-11-12 Denso Corporation Verfahren zur herstellung vertikaler mosfets
US5245572A (en) * 1991-07-30 1993-09-14 Intel Corporation Floating gate nonvolatile memory with reading while writing capability
US5289026A (en) * 1991-08-14 1994-02-22 Intel Corporation Asymmetric floating gate overlap for improved device characteristics in buried bit-line devices
JPH0613627A (ja) * 1991-10-08 1994-01-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US5293328A (en) * 1992-01-15 1994-03-08 National Semiconductor Corporation Electrically reprogrammable EPROM cell with merged transistor and optiumum area
US5196722A (en) * 1992-03-12 1993-03-23 International Business Machines Corporation Shadow ram cell having a shallow trench eeprom
US5399516A (en) * 1992-03-12 1995-03-21 International Business Machines Corporation Method of making shadow RAM cell having a shallow trench EEPROM
US5315142A (en) * 1992-03-23 1994-05-24 International Business Machines Corporation High performance trench EEPROM cell
US5301150A (en) * 1992-06-22 1994-04-05 Intel Corporation Flash erasable single poly EPROM device
JPH0750558B2 (ja) * 1992-09-22 1995-05-31 インターナショナル・ビジネス・マシーンズ・コーポレイション 一括消去型不揮発性メモリ
DE69227772T2 (de) * 1992-09-30 1999-06-24 St Microelectronics Srl Verfahren zur Herstellung von nichtflüchtigen Speichern und so hergestellte Speicher
US5365082A (en) * 1992-09-30 1994-11-15 Texas Instruments Incorporated MOSFET cell array
JPH06120515A (ja) * 1992-10-09 1994-04-28 Oki Electric Ind Co Ltd 半導体不揮発性メモリのデータ書き込み及びデータ消去方法
US5297082A (en) * 1992-11-12 1994-03-22 Micron Semiconductor, Inc. Shallow trench source eprom cell
US5379255A (en) * 1992-12-14 1995-01-03 Texas Instruments Incorporated Three dimensional famos memory devices and methods of fabricating
JPH06212167A (ja) * 1993-01-20 1994-08-02 Mitsubishi Kasei Corp コークス炉の操業管理における原料炭配合精度管理システム
US5329487A (en) * 1993-03-08 1994-07-12 Altera Corporation Two transistor flash EPROM cell
US5399917A (en) * 1993-03-31 1995-03-21 Intel Corporation High voltage tolerant switch constructed for a low voltage CMOS process
JP3317459B2 (ja) * 1993-04-30 2002-08-26 ローム株式会社 不揮発性記憶素子およびこれを利用した不揮発性記憶装置、この記憶装置の駆動方法、ならびにこの記憶素子の製造方法
SG47058A1 (en) * 1993-09-10 1998-03-20 Intel Corp Circuitry and method for selecting a drain programming voltage for a nonvolatile memory
US5378909A (en) * 1993-10-18 1995-01-03 Hughes Aircraft Company Flash EEPROM cell having gap between floating gate and drain for high hot electron injection efficiency for programming
US5408115A (en) * 1994-04-04 1995-04-18 Motorola Inc. Self-aligned, split-gate EEPROM device
US5460988A (en) * 1994-04-25 1995-10-24 United Microelectronics Corporation Process for high density flash EPROM cell
KR0144902B1 (ko) * 1995-04-17 1998-07-01 김광호 불휘발성 메모리장치 및 그 제조방법
US5589411A (en) * 1995-07-28 1996-12-31 United Microelectronics Corporation Process for fabricating a high-voltage MOSFET

Also Published As

Publication number Publication date
DE69637352T2 (de) 2008-11-13
JP2006049926A (ja) 2006-02-16
US6043122A (en) 2000-03-28
KR970706609A (ko) 1997-11-03
EP0784867B1 (de) 2007-12-05
WO1997005655A1 (en) 1997-02-13
US5945705A (en) 1999-08-31
EP0784867A1 (de) 1997-07-23
JP3821848B2 (ja) 2006-09-13
JP3968107B2 (ja) 2007-08-29
JPH10507319A (ja) 1998-07-14

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