DE69703261D1 - Oberflächenemittierende Laser - Google Patents

Oberflächenemittierende Laser

Info

Publication number
DE69703261D1
DE69703261D1 DE69703261T DE69703261T DE69703261D1 DE 69703261 D1 DE69703261 D1 DE 69703261D1 DE 69703261 T DE69703261 T DE 69703261T DE 69703261 T DE69703261 T DE 69703261T DE 69703261 D1 DE69703261 D1 DE 69703261D1
Authority
DE
Germany
Prior art keywords
surface emitting
emitting lasers
lasers
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69703261T
Other languages
English (en)
Other versions
DE69703261T2 (de
Inventor
Scott W Corzine
Michael R T Tan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies International Sales Pte Ltd
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Application granted granted Critical
Publication of DE69703261D1 publication Critical patent/DE69703261D1/de
Publication of DE69703261T2 publication Critical patent/DE69703261T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2072—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by vacancy induced diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3415—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers
DE69703261T 1996-03-12 1997-03-07 Oberflächenemittierende Laser Expired - Lifetime DE69703261T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/614,988 US5867516A (en) 1996-03-12 1996-03-12 Vertical cavity surface emitting laser with reduced turn-on jitter and increased single-mode output

Publications (2)

Publication Number Publication Date
DE69703261D1 true DE69703261D1 (de) 2000-11-16
DE69703261T2 DE69703261T2 (de) 2001-02-22

Family

ID=24463542

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69703261T Expired - Lifetime DE69703261T2 (de) 1996-03-12 1997-03-07 Oberflächenemittierende Laser

Country Status (4)

Country Link
US (1) US5867516A (de)
EP (1) EP0795940B1 (de)
JP (1) JP4053109B2 (de)
DE (1) DE69703261T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU747260B2 (en) 1997-07-25 2002-05-09 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US6256333B1 (en) * 1997-12-12 2001-07-03 Honeywell Inc. VCSEL structure insensitive to mobile hydrogen
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
DE60043536D1 (de) * 1999-03-04 2010-01-28 Nichia Corp Nitridhalbleiterlaserelement
US6751245B1 (en) 1999-06-02 2004-06-15 Optical Communication Products, Inc. Single mode vertical cavity surface emitting laser
TW429289B (en) * 1999-12-10 2001-04-11 Delta Electronics Inc Novel magnetic suspending bearing structure
US6647041B1 (en) * 2000-05-26 2003-11-11 Finisar Corporation Electrically pumped vertical optical cavity with improved electrical performance
JP2004288674A (ja) 2003-03-19 2004-10-14 Fuji Xerox Co Ltd 面発光型半導体レーザおよびそれを用いた光通信システム
US7218660B2 (en) 2003-10-27 2007-05-15 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Single-mode vertical cavity surface emitting lasers and methods of making the same
DE10355600B4 (de) * 2003-11-28 2021-06-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip und Verfahren zur Herstellung von Halbleiterchips
US7372886B2 (en) 2004-06-07 2008-05-13 Avago Technologies Fiber Ip Pte Ltd High thermal conductivity vertical cavity surface emitting laser (VCSEL)
US20060023761A1 (en) * 2004-07-29 2006-02-02 Canon Kabushiki Kaisha Semiconductor laser drive control apparatus
TWI362769B (en) * 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
EP2533380B8 (de) * 2011-06-06 2017-08-30 Mellanox Technologies, Ltd. Hochgeschwindigkeitslaservorrichtung
CN114707344B (zh) * 2022-04-15 2023-09-19 西南交通大学 一种基于系统动力学的多年冻土活动层厚度计算方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2661576B2 (ja) * 1994-12-08 1997-10-08 日本電気株式会社 半導体発光素子
US5659568A (en) * 1995-05-23 1997-08-19 Hewlett-Packard Company Low noise surface emitting laser for multimode optical link applications
DE19524655A1 (de) * 1995-07-06 1997-01-09 Huang Kuo Hsin LED-Struktur

Also Published As

Publication number Publication date
EP0795940B1 (de) 2000-10-11
JPH09326530A (ja) 1997-12-16
US5867516A (en) 1999-02-02
JP4053109B2 (ja) 2008-02-27
DE69703261T2 (de) 2001-02-22
EP0795940A1 (de) 1997-09-17

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: HEWLETT-PACKARD CO. (N.D.GES.D.STAATES DELAWARE),

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D.STAATES DELA

8327 Change in the person/name/address of the patent owner

Owner name: AVAGO TECHNOLOGIES FIBER IP (SINGAPORE) PTE. LTD.,

8328 Change in the person/name/address of the agent

Representative=s name: DILG HAEUSLER SCHINDELMANN PATENTANWALTSGESELLSCHA