TW415970B
(en)
*
|
1997-01-08 |
2000-12-21 |
Ebara Corp |
Vapor-phase film growth apparatus and gas ejection head
|
JP3341619B2
(ja)
*
|
1997-03-04 |
2002-11-05 |
東京エレクトロン株式会社 |
成膜装置
|
US6106625A
(en)
*
|
1997-12-02 |
2000-08-22 |
Applied Materials, Inc. |
Reactor useful for chemical vapor deposition of titanium nitride
|
US6395640B2
(en)
|
1999-12-17 |
2002-05-28 |
Texas Instruments Incorporated |
Apparatus and method for selectivity restricting process fluid flow in semiconductor processing
|
US20020053694A1
(en)
|
1998-06-10 |
2002-05-09 |
Sutcliffe Victor C. |
Method of forming a memory cell with self-aligned contacts
|
US6228208B1
(en)
*
|
1998-08-12 |
2001-05-08 |
Applied Materials, Inc. |
Plasma density and etch rate enhancing semiconductor processing chamber
|
US6454860B2
(en)
*
|
1998-10-27 |
2002-09-24 |
Applied Materials, Inc. |
Deposition reactor having vaporizing, mixing and cleaning capabilities
|
US6300255B1
(en)
*
|
1999-02-24 |
2001-10-09 |
Applied Materials, Inc. |
Method and apparatus for processing semiconductive wafers
|
KR100328820B1
(ko)
*
|
1999-02-25 |
2002-03-14 |
박종섭 |
화학기상증착 장비의 가스분사장치
|
JP2000249058A
(ja)
|
1999-02-26 |
2000-09-12 |
Ebara Corp |
トラップ装置
|
TW582050B
(en)
*
|
1999-03-03 |
2004-04-01 |
Ebara Corp |
Apparatus and method for processing substrate
|
KR100302609B1
(ko)
*
|
1999-05-10 |
2001-09-13 |
김영환 |
온도가변 가스 분사 장치
|
DE19921744B4
(de)
*
|
1999-05-11 |
2008-04-30 |
Applied Materials Gmbh & Co. Kg |
Verfahren zum Transport von mindestens einer dampfförmigen Substanz durch die Wand einer Vakuumkammer in die Vakuumkammer sowie Vorrichtung zur Durchführung des Verfahrens und deren Verwendung
|
US7515264B2
(en)
*
|
1999-06-15 |
2009-04-07 |
Tokyo Electron Limited |
Particle-measuring system and particle-measuring method
|
US6245192B1
(en)
|
1999-06-30 |
2001-06-12 |
Lam Research Corporation |
Gas distribution apparatus for semiconductor processing
|
US6206972B1
(en)
*
|
1999-07-08 |
2001-03-27 |
Genus, Inc. |
Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
|
US7554829B2
(en)
|
1999-07-30 |
2009-06-30 |
Micron Technology, Inc. |
Transmission lines for CMOS integrated circuits
|
US6943392B2
(en)
|
1999-08-30 |
2005-09-13 |
Micron Technology, Inc. |
Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen
|
JP4487338B2
(ja)
*
|
1999-08-31 |
2010-06-23 |
東京エレクトロン株式会社 |
成膜処理装置及び成膜処理方法
|
US6537420B2
(en)
*
|
1999-12-17 |
2003-03-25 |
Texas Instruments Incorporated |
Method and apparatus for restricting process fluid flow within a showerhead assembly
|
US6335049B1
(en)
*
|
2000-01-03 |
2002-01-01 |
Micron Technology, Inc. |
Chemical vapor deposition methods of forming a high K dielectric layer and methods of forming a capacitor
|
US6558517B2
(en)
|
2000-05-26 |
2003-05-06 |
Micron Technology, Inc. |
Physical vapor deposition methods
|
TW200819555A
(en)
*
|
2000-09-08 |
2008-05-01 |
Tokyo Electron Ltd |
Shower head structure, device and method for film formation, and method for cleaning
|
US6641673B2
(en)
*
|
2000-12-20 |
2003-11-04 |
General Electric Company |
Fluid injector for and method of prolonged delivery and distribution of reagents into plasma
|
KR101004222B1
(ko)
*
|
2001-02-09 |
2010-12-24 |
도쿄엘렉트론가부시키가이샤 |
성막 장치
|
US6852167B2
(en)
*
|
2001-03-01 |
2005-02-08 |
Micron Technology, Inc. |
Methods, systems, and apparatus for uniform chemical-vapor depositions
|
US20030017266A1
(en)
|
2001-07-13 |
2003-01-23 |
Cem Basceri |
Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer
|
JP4236882B2
(ja)
*
|
2001-08-01 |
2009-03-11 |
東京エレクトロン株式会社 |
ガス処理装置およびガス処理方法
|
US7011978B2
(en)
|
2001-08-17 |
2006-03-14 |
Micron Technology, Inc. |
Methods of forming capacitor constructions comprising perovskite-type dielectric materials with different amount of crystallinity regions
|
US8026161B2
(en)
|
2001-08-30 |
2011-09-27 |
Micron Technology, Inc. |
Highly reliable amorphous high-K gate oxide ZrO2
|
US6844203B2
(en)
*
|
2001-08-30 |
2005-01-18 |
Micron Technology, Inc. |
Gate oxides, and methods of forming
|
US20030047282A1
(en)
*
|
2001-09-10 |
2003-03-13 |
Yasumi Sago |
Surface processing apparatus
|
US6953730B2
(en)
|
2001-12-20 |
2005-10-11 |
Micron Technology, Inc. |
Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics
|
US6767795B2
(en)
|
2002-01-17 |
2004-07-27 |
Micron Technology, Inc. |
Highly reliable amorphous high-k gate dielectric ZrOXNY
|
US6812100B2
(en)
|
2002-03-13 |
2004-11-02 |
Micron Technology, Inc. |
Evaporation of Y-Si-O films for medium-k dielectrics
|
KR100455430B1
(ko)
*
|
2002-03-29 |
2004-11-06 |
주식회사 엘지이아이 |
열교환기 표면처리장비의 냉각장치 및 그 제조방법
|
KR100829327B1
(ko)
*
|
2002-04-05 |
2008-05-13 |
가부시키가이샤 히다치 고쿠사이 덴키 |
기판 처리 장치 및 반응 용기
|
AU2003224977A1
(en)
*
|
2002-04-19 |
2003-11-03 |
Mattson Technology, Inc. |
System for depositing a film onto a substrate using a low vapor pressure gas precursor
|
US7160577B2
(en)
|
2002-05-02 |
2007-01-09 |
Micron Technology, Inc. |
Methods for atomic-layer deposition of aluminum oxides in integrated circuits
|
US7205218B2
(en)
|
2002-06-05 |
2007-04-17 |
Micron Technology, Inc. |
Method including forming gate dielectrics having multiple lanthanide oxide layers
|
US7135421B2
(en)
|
2002-06-05 |
2006-11-14 |
Micron Technology, Inc. |
Atomic layer-deposited hafnium aluminum oxide
|
US6804136B2
(en)
*
|
2002-06-21 |
2004-10-12 |
Micron Technology, Inc. |
Write once read only memory employing charge trapping in insulators
|
US7193893B2
(en)
|
2002-06-21 |
2007-03-20 |
Micron Technology, Inc. |
Write once read only memory employing floating gates
|
US7221586B2
(en)
|
2002-07-08 |
2007-05-22 |
Micron Technology, Inc. |
Memory utilizing oxide nanolaminates
|
US7221017B2
(en)
|
2002-07-08 |
2007-05-22 |
Micron Technology, Inc. |
Memory utilizing oxide-conductor nanolaminates
|
US6921702B2
(en)
*
|
2002-07-30 |
2005-07-26 |
Micron Technology Inc. |
Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
|
US6884739B2
(en)
*
|
2002-08-15 |
2005-04-26 |
Micron Technology Inc. |
Lanthanide doped TiOx dielectric films by plasma oxidation
|
US6967154B2
(en)
*
|
2002-08-26 |
2005-11-22 |
Micron Technology, Inc. |
Enhanced atomic layer deposition
|
US7199023B2
(en)
|
2002-08-28 |
2007-04-03 |
Micron Technology, Inc. |
Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed
|
US6946033B2
(en)
*
|
2002-09-16 |
2005-09-20 |
Applied Materials Inc. |
Heated gas distribution plate for a processing chamber
|
US20040052969A1
(en)
*
|
2002-09-16 |
2004-03-18 |
Applied Materials, Inc. |
Methods for operating a chemical vapor deposition chamber using a heated gas distribution plate
|
US7101813B2
(en)
|
2002-12-04 |
2006-09-05 |
Micron Technology Inc. |
Atomic layer deposited Zr-Sn-Ti-O films
|
US6958302B2
(en)
*
|
2002-12-04 |
2005-10-25 |
Micron Technology, Inc. |
Atomic layer deposited Zr-Sn-Ti-O films using TiI4
|
US20040118519A1
(en)
*
|
2002-12-20 |
2004-06-24 |
Applied Materials, Inc. |
Blocker plate bypass design to improve clean rate at the edge of the chamber
|
JP2007500794A
(ja)
*
|
2003-05-16 |
2007-01-18 |
エスブイティー アソーシエイツ インコーポレイテッド |
薄膜蒸着エバポレーター
|
KR100526928B1
(ko)
*
|
2003-07-16 |
2005-11-09 |
삼성전자주식회사 |
식각장치
|
US20050109276A1
(en)
*
|
2003-11-25 |
2005-05-26 |
Applied Materials, Inc. |
Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber
|
US7645341B2
(en)
*
|
2003-12-23 |
2010-01-12 |
Lam Research Corporation |
Showerhead electrode assembly for plasma processing apparatuses
|
US20050233477A1
(en)
*
|
2004-03-05 |
2005-10-20 |
Tokyo Electron Limited |
Substrate processing apparatus, substrate processing method, and program for implementing the method
|
US20050223986A1
(en)
*
|
2004-04-12 |
2005-10-13 |
Choi Soo Y |
Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition
|
US8083853B2
(en)
|
2004-05-12 |
2011-12-27 |
Applied Materials, Inc. |
Plasma uniformity control by gas diffuser hole design
|
US7712434B2
(en)
*
|
2004-04-30 |
2010-05-11 |
Lam Research Corporation |
Apparatus including showerhead electrode and heater for plasma processing
|
US20050252447A1
(en)
*
|
2004-05-11 |
2005-11-17 |
Applied Materials, Inc. |
Gas blocker plate for improved deposition
|
US8074599B2
(en)
*
|
2004-05-12 |
2011-12-13 |
Applied Materials, Inc. |
Plasma uniformity control by gas diffuser curvature
|
US8328939B2
(en)
|
2004-05-12 |
2012-12-11 |
Applied Materials, Inc. |
Diffuser plate with slit valve compensation
|
US7622005B2
(en)
*
|
2004-05-26 |
2009-11-24 |
Applied Materials, Inc. |
Uniformity control for low flow process and chamber to chamber matching
|
US7572337B2
(en)
*
|
2004-05-26 |
2009-08-11 |
Applied Materials, Inc. |
Blocker plate bypass to distribute gases in a chemical vapor deposition system
|
CN101090998B
(zh)
*
|
2004-08-02 |
2013-10-16 |
维高仪器股份有限公司 |
用于化学气相沉积反应器的多气体分配喷射器
|
US7628863B2
(en)
*
|
2004-08-03 |
2009-12-08 |
Applied Materials, Inc. |
Heated gas box for PECVD applications
|
US7429410B2
(en)
|
2004-09-20 |
2008-09-30 |
Applied Materials, Inc. |
Diffuser gravity support
|
KR101121417B1
(ko)
*
|
2004-10-28 |
2012-03-15 |
주성엔지니어링(주) |
표시소자의 제조장치
|
US7886687B2
(en)
*
|
2004-12-23 |
2011-02-15 |
Advanced Display Process Engineering Co. Ltd. |
Plasma processing apparatus
|
KR100661744B1
(ko)
*
|
2004-12-23 |
2006-12-27 |
주식회사 에이디피엔지니어링 |
플라즈마 처리장치
|
JP2006179770A
(ja)
*
|
2004-12-24 |
2006-07-06 |
Watanabe Shoko:Kk |
基板表面処理装置
|
JP4918224B2
(ja)
*
|
2005-01-21 |
2012-04-18 |
昭和シェル石油株式会社 |
透明導電膜製膜装置及び多層透明導電膜連続製膜装置
|
WO2006093136A1
(ja)
*
|
2005-03-01 |
2006-09-08 |
Hitachi Kokusai Electric Inc. |
基板処理装置および半導体デバイスの製造方法
|
US7687409B2
(en)
|
2005-03-29 |
2010-03-30 |
Micron Technology, Inc. |
Atomic layer deposited titanium silicon oxide films
|
US7662729B2
(en)
|
2005-04-28 |
2010-02-16 |
Micron Technology, Inc. |
Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
|
KR100629358B1
(ko)
*
|
2005-05-24 |
2006-10-02 |
삼성전자주식회사 |
샤워 헤드
|
US7927948B2
(en)
|
2005-07-20 |
2011-04-19 |
Micron Technology, Inc. |
Devices with nanocrystals and methods of formation
|
DE102005055468A1
(de)
*
|
2005-11-22 |
2007-05-24 |
Aixtron Ag |
Verfahren zum Abscheiden von Schichten in einem CVD-Reaktor sowie Gaseinlassorgan für einen CVD-Reaktor
|
CN101003895B
(zh)
*
|
2006-01-16 |
2011-10-19 |
中微半导体设备(上海)有限公司 |
一种传送反应物到基片的装置及其处理方法
|
US7709402B2
(en)
|
2006-02-16 |
2010-05-04 |
Micron Technology, Inc. |
Conductive layers for hafnium silicon oxynitride films
|
WO2007111348A1
(ja)
*
|
2006-03-28 |
2007-10-04 |
Hitachi Kokusai Electric Inc. |
基板処理装置
|
JP5045000B2
(ja)
*
|
2006-06-20 |
2012-10-10 |
東京エレクトロン株式会社 |
成膜装置、ガス供給装置、成膜方法及び記憶媒体
|
US7501355B2
(en)
|
2006-06-29 |
2009-03-10 |
Applied Materials, Inc. |
Decreasing the etch rate of silicon nitride by carbon addition
|
US7563730B2
(en)
|
2006-08-31 |
2009-07-21 |
Micron Technology, Inc. |
Hafnium lanthanide oxynitride films
|
KR100849929B1
(ko)
*
|
2006-09-16 |
2008-08-26 |
주식회사 피에조닉스 |
반응 기체의 분사 속도를 적극적으로 조절하는 샤워헤드를구비한 화학기상 증착 방법 및 장치
|
US20080099147A1
(en)
*
|
2006-10-26 |
2008-05-01 |
Nyi Oo Myo |
Temperature controlled multi-gas distribution assembly
|
JP2008186865A
(ja)
*
|
2007-01-26 |
2008-08-14 |
Tokyo Electron Ltd |
基板処理装置
|
US8069817B2
(en)
*
|
2007-03-30 |
2011-12-06 |
Lam Research Corporation |
Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
|
US20080317973A1
(en)
*
|
2007-06-22 |
2008-12-25 |
White John M |
Diffuser support
|
JP5568212B2
(ja)
*
|
2007-09-19 |
2014-08-06 |
株式会社日立国際電気 |
基板処理装置、そのコーティング方法、基板処理方法及び半導体デバイスの製造方法
|
US20090095221A1
(en)
*
|
2007-10-16 |
2009-04-16 |
Alexander Tam |
Multi-gas concentric injection showerhead
|
US8673080B2
(en)
*
|
2007-10-16 |
2014-03-18 |
Novellus Systems, Inc. |
Temperature controlled showerhead
|
US20090095222A1
(en)
*
|
2007-10-16 |
2009-04-16 |
Alexander Tam |
Multi-gas spiral channel showerhead
|
US7976631B2
(en)
*
|
2007-10-16 |
2011-07-12 |
Applied Materials, Inc. |
Multi-gas straight channel showerhead
|
KR101192326B1
(ko)
*
|
2007-12-31 |
2012-10-17 |
(주)에이디에스 |
가스분사장치 및 이를 구비하는 박막증착장치
|
US8628621B2
(en)
*
|
2007-12-31 |
2014-01-14 |
Jusung Engineering Co., Ltd. |
Gas injector and film deposition apparatus having the same
|
KR101004927B1
(ko)
*
|
2008-04-24 |
2010-12-29 |
삼성엘이디 주식회사 |
Cvd용 샤워 헤드 및 이를 구비하는 화학 기상 증착 장치
|
FR2930561B1
(fr)
*
|
2008-04-28 |
2011-01-14 |
Altatech Semiconductor |
Dispositif et procede de traitement chimique en phase vapeur.
|
JP2010016225A
(ja)
*
|
2008-07-04 |
2010-01-21 |
Tokyo Electron Ltd |
温度調節機構および温度調節機構を用いた半導体製造装置
|
JP5231117B2
(ja)
*
|
2008-07-24 |
2013-07-10 |
株式会社ニューフレアテクノロジー |
成膜装置および成膜方法
|
US8895107B2
(en)
|
2008-11-06 |
2014-11-25 |
Veeco Instruments Inc. |
Chemical vapor deposition with elevated temperature gas injection
|
US8293013B2
(en)
*
|
2008-12-30 |
2012-10-23 |
Intermolecular, Inc. |
Dual path gas distribution device
|
WO2010107842A2
(en)
*
|
2009-03-16 |
2010-09-23 |
Alta Devices, Inc. |
Showerhead for vapor deposition
|
US9394608B2
(en)
|
2009-04-06 |
2016-07-19 |
Asm America, Inc. |
Semiconductor processing reactor and components thereof
|
US8802201B2
(en)
|
2009-08-14 |
2014-08-12 |
Asm America, Inc. |
Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
|
US9449859B2
(en)
*
|
2009-10-09 |
2016-09-20 |
Applied Materials, Inc. |
Multi-gas centrally cooled showerhead design
|
US9034142B2
(en)
*
|
2009-12-18 |
2015-05-19 |
Novellus Systems, Inc. |
Temperature controlled showerhead for high temperature operations
|
KR100996210B1
(ko)
*
|
2010-04-12 |
2010-11-24 |
세메스 주식회사 |
가스 분사 유닛 및 이를 이용한 박막 증착 장치 및 방법
|
US20110256692A1
(en)
*
|
2010-04-14 |
2011-10-20 |
Applied Materials, Inc. |
Multiple precursor concentric delivery showerhead
|
US8551248B2
(en)
*
|
2010-04-19 |
2013-10-08 |
Texas Instruments Incorporated |
Showerhead for CVD depositions
|
US9441295B2
(en)
*
|
2010-05-14 |
2016-09-13 |
Solarcity Corporation |
Multi-channel gas-delivery system
|
JP5933602B2
(ja)
|
2011-03-04 |
2016-06-15 |
ノベラス・システムズ・インコーポレーテッドNovellus Systems Incorporated |
ガス分配を行なう装置および基板処理装置
|
TWI534291B
(zh)
*
|
2011-03-18 |
2016-05-21 |
應用材料股份有限公司 |
噴淋頭組件
|
US9312155B2
(en)
|
2011-06-06 |
2016-04-12 |
Asm Japan K.K. |
High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
|
US20130023129A1
(en)
|
2011-07-20 |
2013-01-24 |
Asm America, Inc. |
Pressure transmitter for a semiconductor processing environment
|
US9109754B2
(en)
|
2011-10-19 |
2015-08-18 |
Applied Materials, Inc. |
Apparatus and method for providing uniform flow of gas
|
US9017481B1
(en)
|
2011-10-28 |
2015-04-28 |
Asm America, Inc. |
Process feed management for semiconductor substrate processing
|
KR20140092892A
(ko)
*
|
2011-11-08 |
2014-07-24 |
어플라이드 머티어리얼스, 인코포레이티드 |
개선된 증착 균일성을 위한 전구체 분배 피처들
|
US9388494B2
(en)
*
|
2012-06-25 |
2016-07-12 |
Novellus Systems, Inc. |
Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
|
US9121097B2
(en)
*
|
2012-08-31 |
2015-09-01 |
Novellus Systems, Inc. |
Variable showerhead flow by varying internal baffle conductance
|
US10714315B2
(en)
|
2012-10-12 |
2020-07-14 |
Asm Ip Holdings B.V. |
Semiconductor reaction chamber showerhead
|
JP2014082354A
(ja)
*
|
2012-10-17 |
2014-05-08 |
Hitachi High-Technologies Corp |
プラズマ処理装置
|
DE102013113817A1
(de)
*
|
2012-12-14 |
2014-06-18 |
Aixtron Se |
Gasmischvorrichtung
|
US20160376700A1
(en)
|
2013-02-01 |
2016-12-29 |
Asm Ip Holding B.V. |
System for treatment of deposition reactor
|
US9267417B2
(en)
|
2013-10-31 |
2016-02-23 |
Faurecia Emissions Control Technologies Usa, Llc |
Diffuser plate
|
KR102376429B1
(ko)
|
2013-12-18 |
2022-03-17 |
램 리써치 코포레이션 |
균일성 베플들을 포함하는 반도체 기판 프로세싱 장치
|
KR101560623B1
(ko)
*
|
2014-01-03 |
2015-10-15 |
주식회사 유진테크 |
기판처리장치 및 기판처리방법
|
US10683571B2
(en)
|
2014-02-25 |
2020-06-16 |
Asm Ip Holding B.V. |
Gas supply manifold and method of supplying gases to chamber using same
|
US11015245B2
(en)
|
2014-03-19 |
2021-05-25 |
Asm Ip Holding B.V. |
Gas-phase reactor and system having exhaust plenum and components thereof
|
US10741365B2
(en)
|
2014-05-05 |
2020-08-11 |
Lam Research Corporation |
Low volume showerhead with porous baffle
|
KR102451499B1
(ko)
*
|
2014-05-16 |
2022-10-06 |
어플라이드 머티어리얼스, 인코포레이티드 |
샤워헤드 설계
|
US10858737B2
(en)
|
2014-07-28 |
2020-12-08 |
Asm Ip Holding B.V. |
Showerhead assembly and components thereof
|
JP6298383B2
(ja)
*
|
2014-08-19 |
2018-03-20 |
株式会社日立国際電気 |
基板処理装置及び半導体装置の製造方法
|
US9890456B2
(en)
|
2014-08-21 |
2018-02-13 |
Asm Ip Holding B.V. |
Method and system for in situ formation of gas-phase compounds
|
WO2016039909A1
(en)
*
|
2014-09-08 |
2016-03-17 |
Applied Materials, Inc. |
Honeycomb multi-zone gas distribution plate
|
US10941490B2
(en)
|
2014-10-07 |
2021-03-09 |
Asm Ip Holding B.V. |
Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
|
US10276355B2
(en)
|
2015-03-12 |
2019-04-30 |
Asm Ip Holding B.V. |
Multi-zone reactor, system including the reactor, and method of using the same
|
US11384432B2
(en)
*
|
2015-04-22 |
2022-07-12 |
Applied Materials, Inc. |
Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate
|
US10378107B2
(en)
|
2015-05-22 |
2019-08-13 |
Lam Research Corporation |
Low volume showerhead with faceplate holes for improved flow uniformity
|
US10023959B2
(en)
|
2015-05-26 |
2018-07-17 |
Lam Research Corporation |
Anti-transient showerhead
|
US20160359080A1
(en)
|
2015-06-07 |
2016-12-08 |
Solarcity Corporation |
System, method and apparatus for chemical vapor deposition
|
US10458018B2
(en)
|
2015-06-26 |
2019-10-29 |
Asm Ip Holding B.V. |
Structures including metal carbide material, devices including the structures, and methods of forming same
|
US10211308B2
(en)
|
2015-10-21 |
2019-02-19 |
Asm Ip Holding B.V. |
NbMC layers
|
JP6606403B2
(ja)
|
2015-11-05 |
2019-11-13 |
株式会社ニューフレアテクノロジー |
シャワープレート、気相成長装置および気相成長方法
|
US11139308B2
(en)
|
2015-12-29 |
2021-10-05 |
Asm Ip Holding B.V. |
Atomic layer deposition of III-V compounds to form V-NAND devices
|
US10529554B2
(en)
|
2016-02-19 |
2020-01-07 |
Asm Ip Holding B.V. |
Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
|
JP6718730B2
(ja)
*
|
2016-04-19 |
2020-07-08 |
株式会社ニューフレアテクノロジー |
シャワープレート、気相成長装置及び気相成長方法
|
US10865475B2
(en)
|
2016-04-21 |
2020-12-15 |
Asm Ip Holding B.V. |
Deposition of metal borides and silicides
|
US10190213B2
(en)
|
2016-04-21 |
2019-01-29 |
Asm Ip Holding B.V. |
Deposition of metal borides
|
US10032628B2
(en)
|
2016-05-02 |
2018-07-24 |
Asm Ip Holding B.V. |
Source/drain performance through conformal solid state doping
|
US10367080B2
(en)
|
2016-05-02 |
2019-07-30 |
Asm Ip Holding B.V. |
Method of forming a germanium oxynitride film
|
US9748434B1
(en)
|
2016-05-24 |
2017-08-29 |
Tesla, Inc. |
Systems, method and apparatus for curing conductive paste
|
US11453943B2
(en)
|
2016-05-25 |
2022-09-27 |
Asm Ip Holding B.V. |
Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
|
US9859151B1
(en)
|
2016-07-08 |
2018-01-02 |
Asm Ip Holding B.V. |
Selective film deposition method to form air gaps
|
US10612137B2
(en)
|
2016-07-08 |
2020-04-07 |
Asm Ip Holdings B.V. |
Organic reactants for atomic layer deposition
|
US10714385B2
(en)
|
2016-07-19 |
2020-07-14 |
Asm Ip Holding B.V. |
Selective deposition of tungsten
|
CN106011792B
(zh)
*
|
2016-07-26 |
2019-01-29 |
北京中科优唯科技有限公司 |
旋转预混气的mocvd上下盘匀气组件
|
CN106011793B
(zh)
*
|
2016-07-26 |
2019-07-26 |
山西中科潞安紫外光电科技有限公司 |
气盘及气体反应设备
|
KR102532607B1
(ko)
|
2016-07-28 |
2023-05-15 |
에이에스엠 아이피 홀딩 비.브이. |
기판 가공 장치 및 그 동작 방법
|
US9887082B1
(en)
|
2016-07-28 |
2018-02-06 |
Asm Ip Holding B.V. |
Method and apparatus for filling a gap
|
US9812320B1
(en)
|
2016-07-28 |
2017-11-07 |
Asm Ip Holding B.V. |
Method and apparatus for filling a gap
|
US9954136B2
(en)
|
2016-08-03 |
2018-04-24 |
Tesla, Inc. |
Cassette optimized for an inline annealing system
|
US10643826B2
(en)
|
2016-10-26 |
2020-05-05 |
Asm Ip Holdings B.V. |
Methods for thermally calibrating reaction chambers
|
US11532757B2
(en)
|
2016-10-27 |
2022-12-20 |
Asm Ip Holding B.V. |
Deposition of charge trapping layers
|
US10115856B2
(en)
|
2016-10-31 |
2018-10-30 |
Tesla, Inc. |
System and method for curing conductive paste using induction heating
|
US10714350B2
(en)
|
2016-11-01 |
2020-07-14 |
ASM IP Holdings, B.V. |
Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
|
US10229833B2
(en)
|
2016-11-01 |
2019-03-12 |
Asm Ip Holding B.V. |
Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
|
KR102546317B1
(ko)
*
|
2016-11-15 |
2023-06-21 |
에이에스엠 아이피 홀딩 비.브이. |
기체 공급 유닛 및 이를 포함하는 기판 처리 장치
|
KR20180068582A
(ko)
|
2016-12-14 |
2018-06-22 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
US11581186B2
(en)
|
2016-12-15 |
2023-02-14 |
Asm Ip Holding B.V. |
Sequential infiltration synthesis apparatus
|
US11447861B2
(en)
|
2016-12-15 |
2022-09-20 |
Asm Ip Holding B.V. |
Sequential infiltration synthesis apparatus and a method of forming a patterned structure
|
KR20180070971A
(ko)
|
2016-12-19 |
2018-06-27 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
US10269558B2
(en)
|
2016-12-22 |
2019-04-23 |
Asm Ip Holding B.V. |
Method of forming a structure on a substrate
|
US10867788B2
(en)
|
2016-12-28 |
2020-12-15 |
Asm Ip Holding B.V. |
Method of forming a structure on a substrate
|
US11390950B2
(en)
|
2017-01-10 |
2022-07-19 |
Asm Ip Holding B.V. |
Reactor system and method to reduce residue buildup during a film deposition process
|
US10655221B2
(en)
|
2017-02-09 |
2020-05-19 |
Asm Ip Holding B.V. |
Method for depositing oxide film by thermal ALD and PEALD
|
US10468261B2
(en)
|
2017-02-15 |
2019-11-05 |
Asm Ip Holding B.V. |
Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
|
TWI649446B
(zh)
*
|
2017-03-15 |
2019-02-01 |
漢民科技股份有限公司 |
應用於半導體設備之可拆卸式噴氣裝置
|
US10529563B2
(en)
|
2017-03-29 |
2020-01-07 |
Asm Ip Holdings B.V. |
Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
|
KR102457289B1
(ko)
|
2017-04-25 |
2022-10-21 |
에이에스엠 아이피 홀딩 비.브이. |
박막 증착 방법 및 반도체 장치의 제조 방법
|
US10892156B2
(en)
|
2017-05-08 |
2021-01-12 |
Asm Ip Holding B.V. |
Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
|
US10770286B2
(en)
|
2017-05-08 |
2020-09-08 |
Asm Ip Holdings B.V. |
Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
|
US11306395B2
(en)
|
2017-06-28 |
2022-04-19 |
Asm Ip Holding B.V. |
Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
|
US10685834B2
(en)
|
2017-07-05 |
2020-06-16 |
Asm Ip Holdings B.V. |
Methods for forming a silicon germanium tin layer and related semiconductor device structures
|
KR20190009245A
(ko)
|
2017-07-18 |
2019-01-28 |
에이에스엠 아이피 홀딩 비.브이. |
반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
|
US11018002B2
(en)
|
2017-07-19 |
2021-05-25 |
Asm Ip Holding B.V. |
Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
|
US10541333B2
(en)
|
2017-07-19 |
2020-01-21 |
Asm Ip Holding B.V. |
Method for depositing a group IV semiconductor and related semiconductor device structures
|
US11374112B2
(en)
|
2017-07-19 |
2022-06-28 |
Asm Ip Holding B.V. |
Method for depositing a group IV semiconductor and related semiconductor device structures
|
US10590535B2
(en)
|
2017-07-26 |
2020-03-17 |
Asm Ip Holdings B.V. |
Chemical treatment, deposition and/or infiltration apparatus and method for using the same
|
US10770336B2
(en)
|
2017-08-08 |
2020-09-08 |
Asm Ip Holding B.V. |
Substrate lift mechanism and reactor including same
|
US10692741B2
(en)
|
2017-08-08 |
2020-06-23 |
Asm Ip Holdings B.V. |
Radiation shield
|
US11769682B2
(en)
|
2017-08-09 |
2023-09-26 |
Asm Ip Holding B.V. |
Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
|
US10249524B2
(en)
|
2017-08-09 |
2019-04-02 |
Asm Ip Holding B.V. |
Cassette holder assembly for a substrate cassette and holding member for use in such assembly
|
US11139191B2
(en)
|
2017-08-09 |
2021-10-05 |
Asm Ip Holding B.V. |
Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
|
US10276411B2
(en)
|
2017-08-18 |
2019-04-30 |
Applied Materials, Inc. |
High pressure and high temperature anneal chamber
|
US11830730B2
(en)
|
2017-08-29 |
2023-11-28 |
Asm Ip Holding B.V. |
Layer forming method and apparatus
|
US11056344B2
(en)
|
2017-08-30 |
2021-07-06 |
Asm Ip Holding B.V. |
Layer forming method
|
KR102491945B1
(ko)
|
2017-08-30 |
2023-01-26 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
US11295980B2
(en)
|
2017-08-30 |
2022-04-05 |
Asm Ip Holding B.V. |
Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
|
KR102630301B1
(ko)
|
2017-09-21 |
2024-01-29 |
에이에스엠 아이피 홀딩 비.브이. |
침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
|
US10844484B2
(en)
|
2017-09-22 |
2020-11-24 |
Asm Ip Holding B.V. |
Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
|
US10658205B2
(en)
|
2017-09-28 |
2020-05-19 |
Asm Ip Holdings B.V. |
Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
|
US10403504B2
(en)
|
2017-10-05 |
2019-09-03 |
Asm Ip Holding B.V. |
Method for selectively depositing a metallic film on a substrate
|
US10319588B2
(en)
|
2017-10-10 |
2019-06-11 |
Asm Ip Holding B.V. |
Method for depositing a metal chalcogenide on a substrate by cyclical deposition
|
US10923344B2
(en)
|
2017-10-30 |
2021-02-16 |
Asm Ip Holding B.V. |
Methods for forming a semiconductor structure and related semiconductor structures
|
KR102443047B1
(ko)
|
2017-11-16 |
2022-09-14 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치 방법 및 그에 의해 제조된 장치
|
US10910262B2
(en)
|
2017-11-16 |
2021-02-02 |
Asm Ip Holding B.V. |
Method of selectively depositing a capping layer structure on a semiconductor device structure
|
US11022879B2
(en)
|
2017-11-24 |
2021-06-01 |
Asm Ip Holding B.V. |
Method of forming an enhanced unexposed photoresist layer
|
WO2019103610A1
(en)
|
2017-11-27 |
2019-05-31 |
Asm Ip Holding B.V. |
Apparatus including a clean mini environment
|
CN111316417B
(zh)
|
2017-11-27 |
2023-12-22 |
阿斯莫Ip控股公司 |
与批式炉偕同使用的用于储存晶圆匣的储存装置
|
US10872771B2
(en)
|
2018-01-16 |
2020-12-22 |
Asm Ip Holding B. V. |
Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
|
TW202325889A
(zh)
|
2018-01-19 |
2023-07-01 |
荷蘭商Asm 智慧財產控股公司 |
沈積方法
|
WO2019142055A2
(en)
|
2018-01-19 |
2019-07-25 |
Asm Ip Holding B.V. |
Method for depositing a gap-fill layer by plasma-assisted deposition
|
USD903477S1
(en)
|
2018-01-24 |
2020-12-01 |
Asm Ip Holdings B.V. |
Metal clamp
|
US11018047B2
(en)
|
2018-01-25 |
2021-05-25 |
Asm Ip Holding B.V. |
Hybrid lift pin
|
USD880437S1
(en)
|
2018-02-01 |
2020-04-07 |
Asm Ip Holding B.V. |
Gas supply plate for semiconductor manufacturing apparatus
|
US11081345B2
(en)
|
2018-02-06 |
2021-08-03 |
Asm Ip Holding B.V. |
Method of post-deposition treatment for silicon oxide film
|
EP3737779A1
(de)
|
2018-02-14 |
2020-11-18 |
ASM IP Holding B.V. |
Verfahren zum abscheiden eines ruthenium-haltigen films auf einem substrat durch ein zyklisches abscheidungsverfahren
|
US10896820B2
(en)
|
2018-02-14 |
2021-01-19 |
Asm Ip Holding B.V. |
Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
|
US10731249B2
(en)
|
2018-02-15 |
2020-08-04 |
Asm Ip Holding B.V. |
Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
|
KR102636427B1
(ko)
|
2018-02-20 |
2024-02-13 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 방법 및 장치
|
US10975470B2
(en)
|
2018-02-23 |
2021-04-13 |
Asm Ip Holding B.V. |
Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
|
US11473195B2
(en)
|
2018-03-01 |
2022-10-18 |
Asm Ip Holding B.V. |
Semiconductor processing apparatus and a method for processing a substrate
|
US11629406B2
(en)
|
2018-03-09 |
2023-04-18 |
Asm Ip Holding B.V. |
Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
|
US11114283B2
(en)
|
2018-03-16 |
2021-09-07 |
Asm Ip Holding B.V. |
Reactor, system including the reactor, and methods of manufacturing and using same
|
SG11202008268RA
(en)
|
2018-03-19 |
2020-10-29 |
Applied Materials Inc |
Methods for depositing coatings on aerospace components
|
KR102646467B1
(ko)
|
2018-03-27 |
2024-03-11 |
에이에스엠 아이피 홀딩 비.브이. |
기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
|
US11088002B2
(en)
|
2018-03-29 |
2021-08-10 |
Asm Ip Holding B.V. |
Substrate rack and a substrate processing system and method
|
US11230766B2
(en)
|
2018-03-29 |
2022-01-25 |
Asm Ip Holding B.V. |
Substrate processing apparatus and method
|
KR102501472B1
(ko)
|
2018-03-30 |
2023-02-20 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 방법
|
SG11202009888RA
(en)
*
|
2018-04-17 |
2020-11-27 |
Applied Materials Inc |
Heated ceramic faceplate
|
WO2019209401A1
(en)
|
2018-04-27 |
2019-10-31 |
Applied Materials, Inc. |
Protection of components from corrosion
|
TWI811348B
(zh)
|
2018-05-08 |
2023-08-11 |
荷蘭商Asm 智慧財產控股公司 |
藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構
|
TW202349473A
(zh)
|
2018-05-11 |
2023-12-16 |
荷蘭商Asm Ip私人控股有限公司 |
用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構
|
KR102596988B1
(ko)
|
2018-05-28 |
2023-10-31 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 방법 및 그에 의해 제조된 장치
|
US11270899B2
(en)
|
2018-06-04 |
2022-03-08 |
Asm Ip Holding B.V. |
Wafer handling chamber with moisture reduction
|
US11718913B2
(en)
|
2018-06-04 |
2023-08-08 |
Asm Ip Holding B.V. |
Gas distribution system and reactor system including same
|
US11286562B2
(en)
|
2018-06-08 |
2022-03-29 |
Asm Ip Holding B.V. |
Gas-phase chemical reactor and method of using same
|
US10797133B2
(en)
|
2018-06-21 |
2020-10-06 |
Asm Ip Holding B.V. |
Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
|
KR102568797B1
(ko)
|
2018-06-21 |
2023-08-21 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 시스템
|
US11499222B2
(en)
|
2018-06-27 |
2022-11-15 |
Asm Ip Holding B.V. |
Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
|
JP2021529254A
(ja)
|
2018-06-27 |
2021-10-28 |
エーエスエム・アイピー・ホールディング・ベー・フェー |
金属含有材料ならびに金属含有材料を含む膜および構造体を形成するための周期的堆積方法
|
JP6575641B1
(ja)
*
|
2018-06-28 |
2019-09-18 |
株式会社明電舎 |
シャワーヘッドおよび処理装置
|
KR20200002519A
(ko)
|
2018-06-29 |
2020-01-08 |
에이에스엠 아이피 홀딩 비.브이. |
박막 증착 방법 및 반도체 장치의 제조 방법
|
US10612136B2
(en)
|
2018-06-29 |
2020-04-07 |
ASM IP Holding, B.V. |
Temperature-controlled flange and reactor system including same
|
US10388513B1
(en)
|
2018-07-03 |
2019-08-20 |
Asm Ip Holding B.V. |
Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
|
US10755922B2
(en)
|
2018-07-03 |
2020-08-25 |
Asm Ip Holding B.V. |
Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
|
US10767789B2
(en)
|
2018-07-16 |
2020-09-08 |
Asm Ip Holding B.V. |
Diaphragm valves, valve components, and methods for forming valve components
|
US11053591B2
(en)
|
2018-08-06 |
2021-07-06 |
Asm Ip Holding B.V. |
Multi-port gas injection system and reactor system including same
|
US10883175B2
(en)
|
2018-08-09 |
2021-01-05 |
Asm Ip Holding B.V. |
Vertical furnace for processing substrates and a liner for use therein
|
US10829852B2
(en)
|
2018-08-16 |
2020-11-10 |
Asm Ip Holding B.V. |
Gas distribution device for a wafer processing apparatus
|
US11430674B2
(en)
|
2018-08-22 |
2022-08-30 |
Asm Ip Holding B.V. |
Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
|
US11009339B2
(en)
|
2018-08-23 |
2021-05-18 |
Applied Materials, Inc. |
Measurement of thickness of thermal barrier coatings using 3D imaging and surface subtraction methods for objects with complex geometries
|
KR20200030162A
(ko)
|
2018-09-11 |
2020-03-20 |
에이에스엠 아이피 홀딩 비.브이. |
박막 증착 방법
|
US11024523B2
(en)
|
2018-09-11 |
2021-06-01 |
Asm Ip Holding B.V. |
Substrate processing apparatus and method
|
US11049751B2
(en)
|
2018-09-14 |
2021-06-29 |
Asm Ip Holding B.V. |
Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
|
CN110970344A
(zh)
|
2018-10-01 |
2020-04-07 |
Asm Ip控股有限公司 |
衬底保持设备、包含所述设备的系统及其使用方法
|
US11232963B2
(en)
|
2018-10-03 |
2022-01-25 |
Asm Ip Holding B.V. |
Substrate processing apparatus and method
|
KR102592699B1
(ko)
|
2018-10-08 |
2023-10-23 |
에이에스엠 아이피 홀딩 비.브이. |
기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
|
US10847365B2
(en)
|
2018-10-11 |
2020-11-24 |
Asm Ip Holding B.V. |
Method of forming conformal silicon carbide film by cyclic CVD
|
US10811256B2
(en)
|
2018-10-16 |
2020-10-20 |
Asm Ip Holding B.V. |
Method for etching a carbon-containing feature
|
KR102546322B1
(ko)
|
2018-10-19 |
2023-06-21 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치 및 기판 처리 방법
|
KR102605121B1
(ko)
|
2018-10-19 |
2023-11-23 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치 및 기판 처리 방법
|
USD948463S1
(en)
|
2018-10-24 |
2022-04-12 |
Asm Ip Holding B.V. |
Susceptor for semiconductor substrate supporting apparatus
|
US11087997B2
(en)
|
2018-10-31 |
2021-08-10 |
Asm Ip Holding B.V. |
Substrate processing apparatus for processing substrates
|
KR20200051105A
(ko)
|
2018-11-02 |
2020-05-13 |
에이에스엠 아이피 홀딩 비.브이. |
기판 지지 유닛 및 이를 포함하는 기판 처리 장치
|
US11572620B2
(en)
|
2018-11-06 |
2023-02-07 |
Asm Ip Holding B.V. |
Methods for selectively depositing an amorphous silicon film on a substrate
|
US11031242B2
(en)
|
2018-11-07 |
2021-06-08 |
Asm Ip Holding B.V. |
Methods for depositing a boron doped silicon germanium film
|
US10847366B2
(en)
|
2018-11-16 |
2020-11-24 |
Asm Ip Holding B.V. |
Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
|
US10818758B2
(en)
|
2018-11-16 |
2020-10-27 |
Asm Ip Holding B.V. |
Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
|
KR102641752B1
(ko)
*
|
2018-11-21 |
2024-03-04 |
삼성전자주식회사 |
가스 주입 모듈, 기판 처리 장치, 및 그를 이용한 반도체 소자의 제조방법
|
US11217444B2
(en)
|
2018-11-30 |
2022-01-04 |
Asm Ip Holding B.V. |
Method for forming an ultraviolet radiation responsive metal oxide-containing film
|
KR102636428B1
(ko)
|
2018-12-04 |
2024-02-13 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치를 세정하는 방법
|
US11158513B2
(en)
|
2018-12-13 |
2021-10-26 |
Asm Ip Holding B.V. |
Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
|
JP2020096183A
(ja)
|
2018-12-14 |
2020-06-18 |
エーエスエム・アイピー・ホールディング・ベー・フェー |
窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
|
TWI819180B
(zh)
|
2019-01-17 |
2023-10-21 |
荷蘭商Asm 智慧財產控股公司 |
藉由循環沈積製程於基板上形成含過渡金屬膜之方法
|
KR20200091543A
(ko)
|
2019-01-22 |
2020-07-31 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
CN111524788B
(zh)
|
2019-02-01 |
2023-11-24 |
Asm Ip私人控股有限公司 |
氧化硅的拓扑选择性膜形成的方法
|
TW202104632A
(zh)
|
2019-02-20 |
2021-02-01 |
荷蘭商Asm Ip私人控股有限公司 |
用來填充形成於基材表面內之凹部的循環沉積方法及設備
|
US11482533B2
(en)
|
2019-02-20 |
2022-10-25 |
Asm Ip Holding B.V. |
Apparatus and methods for plug fill deposition in 3-D NAND applications
|
JP2020136678A
(ja)
|
2019-02-20 |
2020-08-31 |
エーエスエム・アイピー・ホールディング・ベー・フェー |
基材表面内に形成された凹部を充填するための方法および装置
|
KR102626263B1
(ko)
|
2019-02-20 |
2024-01-16 |
에이에스엠 아이피 홀딩 비.브이. |
처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
|
TW202100794A
(zh)
|
2019-02-22 |
2021-01-01 |
荷蘭商Asm Ip私人控股有限公司 |
基材處理設備及處理基材之方法
|
KR20200108242A
(ko)
|
2019-03-08 |
2020-09-17 |
에이에스엠 아이피 홀딩 비.브이. |
실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
|
US11742198B2
(en)
|
2019-03-08 |
2023-08-29 |
Asm Ip Holding B.V. |
Structure including SiOCN layer and method of forming same
|
KR20200108243A
(ko)
|
2019-03-08 |
2020-09-17 |
에이에스엠 아이피 홀딩 비.브이. |
SiOC 층을 포함한 구조체 및 이의 형성 방법
|
KR20200109620A
(ko)
*
|
2019-03-13 |
2020-09-23 |
(주)포인트엔지니어링 |
접합부품
|
JP2020167398A
(ja)
|
2019-03-28 |
2020-10-08 |
エーエスエム・アイピー・ホールディング・ベー・フェー |
ドアオープナーおよびドアオープナーが提供される基材処理装置
|
KR20200116855A
(ko)
|
2019-04-01 |
2020-10-13 |
에이에스엠 아이피 홀딩 비.브이. |
반도체 소자를 제조하는 방법
|
CN113795908A
(zh)
|
2019-04-08 |
2021-12-14 |
应用材料公司 |
用于修改光刻胶轮廓和调整临界尺寸的方法
|
US11447864B2
(en)
|
2019-04-19 |
2022-09-20 |
Asm Ip Holding B.V. |
Layer forming method and apparatus
|
KR20200125453A
(ko)
|
2019-04-24 |
2020-11-04 |
에이에스엠 아이피 홀딩 비.브이. |
기상 반응기 시스템 및 이를 사용하는 방법
|
US11732353B2
(en)
|
2019-04-26 |
2023-08-22 |
Applied Materials, Inc. |
Methods of protecting aerospace components against corrosion and oxidation
|
KR20200130118A
(ko)
|
2019-05-07 |
2020-11-18 |
에이에스엠 아이피 홀딩 비.브이. |
비정질 탄소 중합체 막을 개질하는 방법
|
KR20200130121A
(ko)
|
2019-05-07 |
2020-11-18 |
에이에스엠 아이피 홀딩 비.브이. |
딥 튜브가 있는 화학물질 공급원 용기
|
KR20200130652A
(ko)
|
2019-05-10 |
2020-11-19 |
에이에스엠 아이피 홀딩 비.브이. |
표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
|
JP2020188255A
(ja)
|
2019-05-16 |
2020-11-19 |
エーエスエム アイピー ホールディング ビー.ブイ. |
ウェハボートハンドリング装置、縦型バッチ炉および方法
|
US11794382B2
(en)
|
2019-05-16 |
2023-10-24 |
Applied Materials, Inc. |
Methods for depositing anti-coking protective coatings on aerospace components
|
USD947913S1
(en)
|
2019-05-17 |
2022-04-05 |
Asm Ip Holding B.V. |
Susceptor shaft
|
USD975665S1
(en)
|
2019-05-17 |
2023-01-17 |
Asm Ip Holding B.V. |
Susceptor shaft
|
USD935572S1
(en)
|
2019-05-24 |
2021-11-09 |
Asm Ip Holding B.V. |
Gas channel plate
|
USD922229S1
(en)
|
2019-06-05 |
2021-06-15 |
Asm Ip Holding B.V. |
Device for controlling a temperature of a gas supply unit
|
KR20200141002A
(ko)
|
2019-06-06 |
2020-12-17 |
에이에스엠 아이피 홀딩 비.브이. |
배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법
|
KR20200143254A
(ko)
|
2019-06-11 |
2020-12-23 |
에이에스엠 아이피 홀딩 비.브이. |
개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
|
US11697879B2
(en)
|
2019-06-14 |
2023-07-11 |
Applied Materials, Inc. |
Methods for depositing sacrificial coatings on aerospace components
|
USD944946S1
(en)
|
2019-06-14 |
2022-03-01 |
Asm Ip Holding B.V. |
Shower plate
|
USD931978S1
(en)
|
2019-06-27 |
2021-09-28 |
Asm Ip Holding B.V. |
Showerhead vacuum transport
|
KR20210005515A
(ko)
|
2019-07-03 |
2021-01-14 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
|
JP2021015791A
(ja)
|
2019-07-09 |
2021-02-12 |
エーエスエム アイピー ホールディング ビー.ブイ. |
同軸導波管を用いたプラズマ装置、基板処理方法
|
CN112216646A
(zh)
|
2019-07-10 |
2021-01-12 |
Asm Ip私人控股有限公司 |
基板支撑组件及包括其的基板处理装置
|
KR20210010307A
(ko)
|
2019-07-16 |
2021-01-27 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
KR20210010820A
(ko)
|
2019-07-17 |
2021-01-28 |
에이에스엠 아이피 홀딩 비.브이. |
실리콘 게르마늄 구조를 형성하는 방법
|
KR20210010816A
(ko)
|
2019-07-17 |
2021-01-28 |
에이에스엠 아이피 홀딩 비.브이. |
라디칼 보조 점화 플라즈마 시스템 및 방법
|
US11643724B2
(en)
|
2019-07-18 |
2023-05-09 |
Asm Ip Holding B.V. |
Method of forming structures using a neutral beam
|
JP2021019198A
(ja)
|
2019-07-19 |
2021-02-15 |
エーエスエム・アイピー・ホールディング・ベー・フェー |
トポロジー制御されたアモルファスカーボンポリマー膜の形成方法
|
CN112309843A
(zh)
|
2019-07-29 |
2021-02-02 |
Asm Ip私人控股有限公司 |
实现高掺杂剂掺入的选择性沉积方法
|
CN112309899A
(zh)
|
2019-07-30 |
2021-02-02 |
Asm Ip私人控股有限公司 |
基板处理设备
|
CN112309900A
(zh)
|
2019-07-30 |
2021-02-02 |
Asm Ip私人控股有限公司 |
基板处理设备
|
US11587814B2
(en)
|
2019-07-31 |
2023-02-21 |
Asm Ip Holding B.V. |
Vertical batch furnace assembly
|
US11227782B2
(en)
|
2019-07-31 |
2022-01-18 |
Asm Ip Holding B.V. |
Vertical batch furnace assembly
|
US11587815B2
(en)
|
2019-07-31 |
2023-02-21 |
Asm Ip Holding B.V. |
Vertical batch furnace assembly
|
KR20210018759A
(ko)
|
2019-08-05 |
2021-02-18 |
에이에스엠 아이피 홀딩 비.브이. |
화학물질 공급원 용기를 위한 액체 레벨 센서
|
USD965044S1
(en)
|
2019-08-19 |
2022-09-27 |
Asm Ip Holding B.V. |
Susceptor shaft
|
USD965524S1
(en)
|
2019-08-19 |
2022-10-04 |
Asm Ip Holding B.V. |
Susceptor support
|
JP2021031769A
(ja)
|
2019-08-21 |
2021-03-01 |
エーエスエム アイピー ホールディング ビー.ブイ. |
成膜原料混合ガス生成装置及び成膜装置
|
USD940837S1
(en)
|
2019-08-22 |
2022-01-11 |
Asm Ip Holding B.V. |
Electrode
|
USD930782S1
(en)
|
2019-08-22 |
2021-09-14 |
Asm Ip Holding B.V. |
Gas distributor
|
USD949319S1
(en)
|
2019-08-22 |
2022-04-19 |
Asm Ip Holding B.V. |
Exhaust duct
|
USD979506S1
(en)
|
2019-08-22 |
2023-02-28 |
Asm Ip Holding B.V. |
Insulator
|
KR20210024423A
(ko)
|
2019-08-22 |
2021-03-05 |
에이에스엠 아이피 홀딩 비.브이. |
홀을 구비한 구조체를 형성하기 위한 방법
|
US11286558B2
(en)
|
2019-08-23 |
2022-03-29 |
Asm Ip Holding B.V. |
Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
|
KR20210024420A
(ko)
|
2019-08-23 |
2021-03-05 |
에이에스엠 아이피 홀딩 비.브이. |
비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
|
KR20210029090A
(ko)
|
2019-09-04 |
2021-03-15 |
에이에스엠 아이피 홀딩 비.브이. |
희생 캡핑 층을 이용한 선택적 증착 방법
|
KR20210029663A
(ko)
|
2019-09-05 |
2021-03-16 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
US11466364B2
(en)
|
2019-09-06 |
2022-10-11 |
Applied Materials, Inc. |
Methods for forming protective coatings containing crystallized aluminum oxide
|
US11562901B2
(en)
|
2019-09-25 |
2023-01-24 |
Asm Ip Holding B.V. |
Substrate processing method
|
CN112593212B
(zh)
|
2019-10-02 |
2023-12-22 |
Asm Ip私人控股有限公司 |
通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
|
TW202129060A
(zh)
|
2019-10-08 |
2021-08-01 |
荷蘭商Asm Ip控股公司 |
基板處理裝置、及基板處理方法
|
TW202115273A
(zh)
|
2019-10-10 |
2021-04-16 |
荷蘭商Asm Ip私人控股有限公司 |
形成光阻底層之方法及包括光阻底層之結構
|
KR20210045930A
(ko)
|
2019-10-16 |
2021-04-27 |
에이에스엠 아이피 홀딩 비.브이. |
실리콘 산화물의 토폴로지-선택적 막의 형성 방법
|
US11637014B2
(en)
|
2019-10-17 |
2023-04-25 |
Asm Ip Holding B.V. |
Methods for selective deposition of doped semiconductor material
|
KR20210047808A
(ko)
|
2019-10-21 |
2021-04-30 |
에이에스엠 아이피 홀딩 비.브이. |
막을 선택적으로 에칭하기 위한 장치 및 방법
|
US11646205B2
(en)
|
2019-10-29 |
2023-05-09 |
Asm Ip Holding B.V. |
Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
|
KR20210054983A
(ko)
|
2019-11-05 |
2021-05-14 |
에이에스엠 아이피 홀딩 비.브이. |
도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
|
US11501968B2
(en)
|
2019-11-15 |
2022-11-15 |
Asm Ip Holding B.V. |
Method for providing a semiconductor device with silicon filled gaps
|
KR20210062561A
(ko)
|
2019-11-20 |
2021-05-31 |
에이에스엠 아이피 홀딩 비.브이. |
기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
|
KR20210065848A
(ko)
|
2019-11-26 |
2021-06-04 |
에이에스엠 아이피 홀딩 비.브이. |
제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
|
CN112951697A
(zh)
|
2019-11-26 |
2021-06-11 |
Asm Ip私人控股有限公司 |
基板处理设备
|
CN112885693A
(zh)
|
2019-11-29 |
2021-06-01 |
Asm Ip私人控股有限公司 |
基板处理设备
|
CN112885692A
(zh)
|
2019-11-29 |
2021-06-01 |
Asm Ip私人控股有限公司 |
基板处理设备
|
JP2021090042A
(ja)
|
2019-12-02 |
2021-06-10 |
エーエスエム アイピー ホールディング ビー.ブイ. |
基板処理装置、基板処理方法
|
CN110904438A
(zh)
*
|
2019-12-04 |
2020-03-24 |
沈阳拓荆科技有限公司 |
用于多种化学源之气体分配装置
|
KR20210070898A
(ko)
|
2019-12-04 |
2021-06-15 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
TW202125596A
(zh)
|
2019-12-17 |
2021-07-01 |
荷蘭商Asm Ip私人控股有限公司 |
形成氮化釩層之方法以及包括該氮化釩層之結構
|
US11527403B2
(en)
|
2019-12-19 |
2022-12-13 |
Asm Ip Holding B.V. |
Methods for filling a gap feature on a substrate surface and related semiconductor structures
|
KR20210095050A
(ko)
|
2020-01-20 |
2021-07-30 |
에이에스엠 아이피 홀딩 비.브이. |
박막 형성 방법 및 박막 표면 개질 방법
|
TW202130846A
(zh)
|
2020-02-03 |
2021-08-16 |
荷蘭商Asm Ip私人控股有限公司 |
形成包括釩或銦層的結構之方法
|
KR20210100010A
(ko)
|
2020-02-04 |
2021-08-13 |
에이에스엠 아이피 홀딩 비.브이. |
대형 물품의 투과율 측정을 위한 방법 및 장치
|
US11776846B2
(en)
|
2020-02-07 |
2023-10-03 |
Asm Ip Holding B.V. |
Methods for depositing gap filling fluids and related systems and devices
|
US11781243B2
(en)
|
2020-02-17 |
2023-10-10 |
Asm Ip Holding B.V. |
Method for depositing low temperature phosphorous-doped silicon
|
KR20210116240A
(ko)
|
2020-03-11 |
2021-09-27 |
에이에스엠 아이피 홀딩 비.브이. |
조절성 접합부를 갖는 기판 핸들링 장치
|
US11876356B2
(en)
|
2020-03-11 |
2024-01-16 |
Asm Ip Holding B.V. |
Lockout tagout assembly and system and method of using same
|
CN113394086A
(zh)
|
2020-03-12 |
2021-09-14 |
Asm Ip私人控股有限公司 |
用于制造具有目标拓扑轮廓的层结构的方法
|
KR20210124042A
(ko)
|
2020-04-02 |
2021-10-14 |
에이에스엠 아이피 홀딩 비.브이. |
박막 형성 방법
|
TW202146689A
(zh)
|
2020-04-03 |
2021-12-16 |
荷蘭商Asm Ip控股公司 |
阻障層形成方法及半導體裝置的製造方法
|
TW202145344A
(zh)
|
2020-04-08 |
2021-12-01 |
荷蘭商Asm Ip私人控股有限公司 |
用於選擇性蝕刻氧化矽膜之設備及方法
|
US11821078B2
(en)
|
2020-04-15 |
2023-11-21 |
Asm Ip Holding B.V. |
Method for forming precoat film and method for forming silicon-containing film
|
KR20210132605A
(ko)
|
2020-04-24 |
2021-11-04 |
에이에스엠 아이피 홀딩 비.브이. |
냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리
|
KR20210132600A
(ko)
|
2020-04-24 |
2021-11-04 |
에이에스엠 아이피 홀딩 비.브이. |
바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
|
TW202140831A
(zh)
|
2020-04-24 |
2021-11-01 |
荷蘭商Asm Ip私人控股有限公司 |
形成含氮化釩層及包含該層的結構之方法
|
KR20210134226A
(ko)
|
2020-04-29 |
2021-11-09 |
에이에스엠 아이피 홀딩 비.브이. |
고체 소스 전구체 용기
|
KR20210134869A
(ko)
|
2020-05-01 |
2021-11-11 |
에이에스엠 아이피 홀딩 비.브이. |
Foup 핸들러를 이용한 foup의 빠른 교환
|
KR20210141379A
(ko)
|
2020-05-13 |
2021-11-23 |
에이에스엠 아이피 홀딩 비.브이. |
반응기 시스템용 레이저 정렬 고정구
|
KR20210143653A
(ko)
|
2020-05-19 |
2021-11-29 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치
|
US11519066B2
(en)
|
2020-05-21 |
2022-12-06 |
Applied Materials, Inc. |
Nitride protective coatings on aerospace components and methods for making the same
|
KR20210145078A
(ko)
|
2020-05-21 |
2021-12-01 |
에이에스엠 아이피 홀딩 비.브이. |
다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
|
TW202201602A
(zh)
|
2020-05-29 |
2022-01-01 |
荷蘭商Asm Ip私人控股有限公司 |
基板處理方法
|
TW202218133A
(zh)
|
2020-06-24 |
2022-05-01 |
荷蘭商Asm Ip私人控股有限公司 |
形成含矽層之方法
|
TW202217953A
(zh)
|
2020-06-30 |
2022-05-01 |
荷蘭商Asm Ip私人控股有限公司 |
基板處理方法
|
WO2022005696A1
(en)
|
2020-07-03 |
2022-01-06 |
Applied Materials, Inc. |
Methods for refurbishing aerospace components
|
KR20220010438A
(ko)
|
2020-07-17 |
2022-01-25 |
에이에스엠 아이피 홀딩 비.브이. |
포토리소그래피에 사용하기 위한 구조체 및 방법
|
TW202204662A
(zh)
|
2020-07-20 |
2022-02-01 |
荷蘭商Asm Ip私人控股有限公司 |
用於沉積鉬層之方法及系統
|
KR20220027026A
(ko)
|
2020-08-26 |
2022-03-07 |
에이에스엠 아이피 홀딩 비.브이. |
금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템
|
USD990534S1
(en)
|
2020-09-11 |
2023-06-27 |
Asm Ip Holding B.V. |
Weighted lift pin
|
USD1012873S1
(en)
|
2020-09-24 |
2024-01-30 |
Asm Ip Holding B.V. |
Electrode for semiconductor processing apparatus
|
TW202229613A
(zh)
|
2020-10-14 |
2022-08-01 |
荷蘭商Asm Ip私人控股有限公司 |
於階梯式結構上沉積材料的方法
|
KR20220053482A
(ko)
|
2020-10-22 |
2022-04-29 |
에이에스엠 아이피 홀딩 비.브이. |
바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
|
TW202223136A
(zh)
|
2020-10-28 |
2022-06-16 |
荷蘭商Asm Ip私人控股有限公司 |
用於在基板上形成層之方法、及半導體處理系統
|
KR20220076343A
(ko)
|
2020-11-30 |
2022-06-08 |
에이에스엠 아이피 홀딩 비.브이. |
기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터
|
US11946137B2
(en)
|
2020-12-16 |
2024-04-02 |
Asm Ip Holding B.V. |
Runout and wobble measurement fixtures
|
TW202231903A
(zh)
|
2020-12-22 |
2022-08-16 |
荷蘭商Asm Ip私人控股有限公司 |
過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
|
USD981973S1
(en)
|
2021-05-11 |
2023-03-28 |
Asm Ip Holding B.V. |
Reactor wall for substrate processing apparatus
|
USD980814S1
(en)
|
2021-05-11 |
2023-03-14 |
Asm Ip Holding B.V. |
Gas distributor for substrate processing apparatus
|
USD980813S1
(en)
|
2021-05-11 |
2023-03-14 |
Asm Ip Holding B.V. |
Gas flow control plate for substrate processing apparatus
|
USD1023959S1
(en)
|
2021-05-11 |
2024-04-23 |
Asm Ip Holding B.V. |
Electrode for substrate processing apparatus
|
USD990441S1
(en)
|
2021-09-07 |
2023-06-27 |
Asm Ip Holding B.V. |
Gas flow control plate
|