DE69710609D1 - Herstellungsverfahern eines integrierten schaltkreises mit unterschiedlicher gateoxidedicke - Google Patents
Herstellungsverfahern eines integrierten schaltkreises mit unterschiedlicher gateoxidedickeInfo
- Publication number
- DE69710609D1 DE69710609D1 DE69710609T DE69710609T DE69710609D1 DE 69710609 D1 DE69710609 D1 DE 69710609D1 DE 69710609 T DE69710609 T DE 69710609T DE 69710609 T DE69710609 T DE 69710609T DE 69710609 D1 DE69710609 D1 DE 69710609D1
- Authority
- DE
- Germany
- Prior art keywords
- gateoxide
- manufacturing
- thickness
- different
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/981—Utilizing varying dielectric thickness
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/699,249 US5882993A (en) | 1996-08-19 | 1996-08-19 | Integrated circuit with differing gate oxide thickness and process for making same |
| PCT/US1997/009638 WO1998008254A1 (en) | 1996-08-19 | 1997-05-29 | Integrated circuit with differing gate oxide thickness and process for making same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69710609D1 true DE69710609D1 (de) | 2002-03-28 |
| DE69710609T2 DE69710609T2 (de) | 2002-10-17 |
Family
ID=24808513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69710609T Expired - Lifetime DE69710609T2 (de) | 1996-08-19 | 1997-05-29 | Herstellungsverfahern eines integrierten schaltkreises mit unterschiedlicher gateoxidedicke |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US5882993A (de) |
| EP (1) | EP0944921B1 (de) |
| JP (1) | JP2000517102A (de) |
| KR (1) | KR100517677B1 (de) |
| DE (1) | DE69710609T2 (de) |
| WO (1) | WO1998008254A1 (de) |
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| US5882993A (en) | 1996-08-19 | 1999-03-16 | Advanced Micro Devices, Inc. | Integrated circuit with differing gate oxide thickness and process for making same |
| US6033943A (en) * | 1996-08-23 | 2000-03-07 | Advanced Micro Devices, Inc. | Dual gate oxide thickness integrated circuit and process for making same |
| US5789305A (en) | 1997-01-27 | 1998-08-04 | Chartered Semiconductor Manufacturing Ltd. | Locos with bird's beak suppression by a nitrogen implantation |
| US6117736A (en) * | 1997-01-30 | 2000-09-12 | Lsi Logic Corporation | Method of fabricating insulated-gate field-effect transistors having different gate capacitances |
| US5872376A (en) | 1997-03-06 | 1999-02-16 | Advanced Micro Devices, Inc. | Oxide formation technique using thin film silicon deposition |
| US5962914A (en) | 1998-01-14 | 1999-10-05 | Advanced Micro Devices, Inc. | Reduced bird's beak field oxidation process using nitrogen implanted into active region |
| US5963803A (en) * | 1998-02-02 | 1999-10-05 | Advanced Micro Devices, Inc. | Method of making N-channel and P-channel IGFETs with different gate thicknesses and spacer widths |
| US6093659A (en) * | 1998-03-25 | 2000-07-25 | Texas Instruments Incorporated | Selective area halogen doping to achieve dual gate oxide thickness on a wafer |
| JP3194370B2 (ja) * | 1998-05-11 | 2001-07-30 | 日本電気株式会社 | 半導体装置とその製造方法 |
| US6165849A (en) * | 1998-12-04 | 2000-12-26 | Advanced Micro Devices, Inc. | Method of manufacturing mosfet with differential gate oxide thickness on the same IC chip |
| US6147008A (en) * | 1999-11-19 | 2000-11-14 | Chartered Semiconductor Manufacturing Ltd. | Creation of multiple gate oxide with high thickness ratio in flash memory process |
-
1996
- 1996-08-19 US US08/699,249 patent/US5882993A/en not_active Expired - Lifetime
-
1997
- 1997-05-29 EP EP97927970A patent/EP0944921B1/de not_active Expired - Lifetime
- 1997-05-29 WO PCT/US1997/009638 patent/WO1998008254A1/en not_active Application Discontinuation
- 1997-05-29 JP JP10510718A patent/JP2000517102A/ja active Pending
- 1997-05-29 DE DE69710609T patent/DE69710609T2/de not_active Expired - Lifetime
- 1997-05-29 KR KR10-1999-7001315A patent/KR100517677B1/ko active IP Right Grant
-
1998
- 1998-12-08 US US09/207,437 patent/US6661061B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0944921B1 (de) | 2002-02-20 |
| US5882993A (en) | 1999-03-16 |
| DE69710609T2 (de) | 2002-10-17 |
| EP0944921A1 (de) | 1999-09-29 |
| KR100517677B1 (ko) | 2005-09-29 |
| JP2000517102A (ja) | 2000-12-19 |
| US6661061B1 (en) | 2003-12-09 |
| KR20000030013A (ko) | 2000-05-25 |
| WO1998008254A1 (en) | 1998-02-26 |
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