DE69715075D1 - Verfahren zum epitaktischen Wachsen einer Halbleiterverbindung in der Dampffase - Google Patents

Verfahren zum epitaktischen Wachsen einer Halbleiterverbindung in der Dampffase

Info

Publication number
DE69715075D1
DE69715075D1 DE69715075T DE69715075T DE69715075D1 DE 69715075 D1 DE69715075 D1 DE 69715075D1 DE 69715075 T DE69715075 T DE 69715075T DE 69715075 T DE69715075 T DE 69715075T DE 69715075 D1 DE69715075 D1 DE 69715075D1
Authority
DE
Germany
Prior art keywords
vapor phase
semiconductor compound
epitaxially growing
epitaxially
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69715075T
Other languages
English (en)
Other versions
DE69715075T2 (de
Inventor
Takuji Okahisa
Mitsuru Shimazu
Masato Matsushima
Yoshiki Miura
Kensaku Motoki
Hisashi Seki
Akinori Koukitu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69715075D1 publication Critical patent/DE69715075D1/de
Application granted granted Critical
Publication of DE69715075T2 publication Critical patent/DE69715075T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2077—Methods of obtaining the confinement using lateral bandgap control during growth, e.g. selective growth, mask induced
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2308—Amplifier arrangements, e.g. MOPA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates
DE69715075T 1996-03-25 1997-03-25 Verfahren zum epitaktischen Wachsen einer Halbleiterverbindung in der Dampffase Expired - Lifetime DE69715075T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6776296 1996-03-25
JP8757097A JP3879173B2 (ja) 1996-03-25 1997-03-21 化合物半導体気相成長方法

Publications (2)

Publication Number Publication Date
DE69715075D1 true DE69715075D1 (de) 2002-10-10
DE69715075T2 DE69715075T2 (de) 2003-01-23

Family

ID=26408975

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69715075T Expired - Lifetime DE69715075T2 (de) 1996-03-25 1997-03-25 Verfahren zum epitaktischen Wachsen einer Halbleiterverbindung in der Dampffase

Country Status (6)

Country Link
US (1) US5970314A (de)
EP (1) EP0801156B1 (de)
JP (1) JP3879173B2 (de)
KR (1) KR100497262B1 (de)
CN (1) CN1097847C (de)
DE (1) DE69715075T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10335700A (ja) * 1997-06-04 1998-12-18 Toshiba Corp 半導体発光素子およびその製造方法
EP0896406B1 (de) 1997-08-08 2006-06-07 Matsushita Electric Industrial Co., Ltd. Halbleiterlaservorrichtung , optisches Kommunikationssystem unter Verwendung desselben und Herstellungsverfahren
US20110163323A1 (en) * 1997-10-30 2011-07-07 Sumitomo Electric Industires, Ltd. GaN SINGLE CRYSTAL SUBSTRATE AND METHOD OF MAKING THE SAME
EP1041610B1 (de) * 1997-10-30 2010-12-15 Sumitomo Electric Industries, Ltd. Gan einkristall-substrat und herstellungsmethode
JP3349931B2 (ja) * 1997-10-30 2002-11-25 松下電器産業株式会社 半導体レーザ装置の製造方法
TW398084B (en) * 1998-06-05 2000-07-11 Hewlett Packard Co Multilayered indium-containing nitride buffer layer for nitride epitaxy
CN1062917C (zh) * 1998-08-12 2001-03-07 北京大学 铟镓氮单晶薄膜金属有机物气相外延生长技术
US6812053B1 (en) * 1999-10-14 2004-11-02 Cree, Inc. Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
KR100595177B1 (ko) * 2000-02-10 2006-07-03 엘지전자 주식회사 질화물 발광소자 제조방법
AU2002235146A1 (en) 2000-11-30 2002-06-11 North Carolina State University Non-thermionic sputter material transport device, methods of use, and materials produced thereby
AU2002219966A1 (en) 2000-11-30 2002-06-11 North Carolina State University Methods and apparatus for producing m'n based materials
US6599362B2 (en) 2001-01-03 2003-07-29 Sandia Corporation Cantilever epitaxial process
US6576932B2 (en) 2001-03-01 2003-06-10 Lumileds Lighting, U.S., Llc Increasing the brightness of III-nitride light emitting devices
US6645885B2 (en) 2001-09-27 2003-11-11 The National University Of Singapore Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
JP4532846B2 (ja) * 2003-05-07 2010-08-25 キヤノン株式会社 半導体基板の製造方法
KR100586975B1 (ko) * 2004-06-30 2006-06-08 삼성전기주식회사 질화물 반도체 소자 및 제조방법
FR2904008B1 (fr) * 2006-07-18 2009-12-04 Centre Nat Rech Scient NOUVEAU PROCEDE POUR LA CROISSANCE DE NITRURES D'ELEMENTS DU GROUPE IIIb.
DE112008000279T5 (de) * 2007-01-31 2010-04-01 Sumitomo Chemical Co. Ltd. Verfahren zur Herstellung von Gruppe III-V-Verbindungshalbleitern
WO2011058697A1 (ja) * 2009-11-12 2011-05-19 パナソニック株式会社 窒化物半導体素子の製造方法
CN103840044B (zh) * 2012-11-27 2016-10-26 比亚迪股份有限公司 外延片量子阱结构的制备方法
CN103078016A (zh) * 2012-12-29 2013-05-01 光达光电设备科技（嘉兴）有限公司 Led外延片沉积方法和led外延片沉积设备
ITUA20161691A1 (it) * 2016-03-15 2017-09-15 Univ Degli Studi Di Milano Bicocca Metodo per la produzione di elettrodi per dispositivi elettrochimici
CN114717535B (zh) * 2022-03-21 2023-07-14 太原理工大学 一种在硅衬底上制备纤锌矿InGaN纳米棒的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5422276B2 (de) * 1973-03-19 1979-08-06
JPS51126036A (en) * 1974-07-23 1976-11-02 Fujitsu Ltd Semi-conductor crystal growth method
JPS58167766A (ja) * 1982-03-30 1983-10-04 Agency Of Ind Science & Technol 化学蒸着装置
JPS6291495A (ja) * 1985-10-15 1987-04-25 Nec Corp 半導体薄膜気相成長法
US5012158A (en) * 1986-07-25 1991-04-30 National Research Institute For Metals Plasma CVD apparatus
IT1225612B (it) * 1988-07-29 1990-11-22 Sgs Thomson Microelectronics Processo di fabbricazione di dispositivi integrati cmos con lunghezza di gate ridotta e transistori a canale superficiale
US5334277A (en) * 1990-10-25 1994-08-02 Nichia Kagaky Kogyo K.K. Method of vapor-growing semiconductor crystal and apparatus for vapor-growing the same
WO1994003931A1 (fr) * 1992-08-07 1994-02-17 Asahi Kasei Kogyo Kabushiki Kaisha Dispositif semi-conducteur a base de nitrure et fabrication
JP3274907B2 (ja) * 1992-11-20 2002-04-15 日亜化学工業株式会社 窒化インジウムガリウム化合物半導体の成長方法
US5656832A (en) * 1994-03-09 1997-08-12 Kabushiki Kaisha Toshiba Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness
US5661074A (en) * 1995-02-03 1997-08-26 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same

Also Published As

Publication number Publication date
EP0801156B1 (de) 2002-09-04
KR100497262B1 (ko) 2005-09-28
JP3879173B2 (ja) 2007-02-07
JPH09315899A (ja) 1997-12-09
US5970314A (en) 1999-10-19
CN1164759A (zh) 1997-11-12
EP0801156A3 (de) 1998-05-27
DE69715075T2 (de) 2003-01-23
KR970068061A (ko) 1997-10-13
CN1097847C (zh) 2003-01-01
EP0801156A2 (de) 1997-10-15

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