DE69720212T2 - Verfahren zur chemisch-mechanischen planarisierung von stopschicht halbleiterscheiben - Google Patents
Verfahren zur chemisch-mechanischen planarisierung von stopschicht halbleiterscheibenInfo
- Publication number
- DE69720212T2 DE69720212T2 DE69720212T DE69720212T DE69720212T2 DE 69720212 T2 DE69720212 T2 DE 69720212T2 DE 69720212 T DE69720212 T DE 69720212T DE 69720212 T DE69720212 T DE 69720212T DE 69720212 T2 DE69720212 T2 DE 69720212T2
- Authority
- DE
- Germany
- Prior art keywords
- wafer
- chemical
- pad
- mechanical planarization
- stop layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/015—Temperature control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/651,896 US5893754A (en) | 1996-05-21 | 1996-05-21 | Method for chemical-mechanical planarization of stop-on-feature semiconductor wafers |
PCT/US1997/008786 WO1997044160A1 (en) | 1996-05-21 | 1997-05-21 | Method for chemical-mechanical planarization of stop-on-feature semiconductor wafers |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69720212D1 DE69720212D1 (de) | 2003-04-30 |
DE69720212T2 true DE69720212T2 (de) | 2003-12-18 |
Family
ID=24614677
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69720212T Expired - Lifetime DE69720212T2 (de) | 1996-05-21 | 1997-05-21 | Verfahren zur chemisch-mechanischen planarisierung von stopschicht halbleiterscheiben |
Country Status (8)
Country | Link |
---|---|
US (2) | US5893754A (de) |
EP (1) | EP0907460B1 (de) |
JP (1) | JP4219984B2 (de) |
KR (1) | KR100412165B1 (de) |
AT (1) | ATE235347T1 (de) |
AU (1) | AU3211697A (de) |
DE (1) | DE69720212T2 (de) |
WO (1) | WO1997044160A1 (de) |
Families Citing this family (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6075606A (en) | 1996-02-16 | 2000-06-13 | Doan; Trung T. | Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers and other microelectronic substrates |
US5871392A (en) * | 1996-06-13 | 1999-02-16 | Micron Technology, Inc. | Under-pad for chemical-mechanical planarization of semiconductor wafers |
JP3144635B2 (ja) * | 1998-10-13 | 2001-03-12 | 日本電気株式会社 | 半導体装置の製造方法 |
US6407000B1 (en) | 1999-04-09 | 2002-06-18 | Micron Technology, Inc. | Method and apparatuses for making and using bi-modal abrasive slurries for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6599836B1 (en) * | 1999-04-09 | 2003-07-29 | Micron Technology, Inc. | Planarizing solutions, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US20050118839A1 (en) * | 1999-04-23 | 2005-06-02 | Industrial Technology Research Institute | Chemical mechanical polish process control method using thermal imaging of polishing pad |
JP2001018169A (ja) | 1999-07-07 | 2001-01-23 | Ebara Corp | 研磨装置 |
US6383934B1 (en) | 1999-09-02 | 2002-05-07 | Micron Technology, Inc. | Method and apparatus for chemical-mechanical planarization of microelectronic substrates with selected planarizing liquids |
US6364749B1 (en) | 1999-09-02 | 2002-04-02 | Micron Technology, Inc. | CMP polishing pad with hydrophilic surfaces for enhanced wetting |
US6306768B1 (en) | 1999-11-17 | 2001-10-23 | Micron Technology, Inc. | Method for planarizing microelectronic substrates having apertures |
US6498101B1 (en) | 2000-02-28 | 2002-12-24 | Micron Technology, Inc. | Planarizing pads, planarizing machines and methods for making and using planarizing pads in mechanical and chemical-mechanical planarization of microelectronic device substrate assemblies |
US6402591B1 (en) * | 2000-03-31 | 2002-06-11 | Lam Research Corporation | Planarization system for chemical-mechanical polishing |
US6313038B1 (en) | 2000-04-26 | 2001-11-06 | Micron Technology, Inc. | Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates |
US6387289B1 (en) * | 2000-05-04 | 2002-05-14 | Micron Technology, Inc. | Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6612901B1 (en) | 2000-06-07 | 2003-09-02 | Micron Technology, Inc. | Apparatus for in-situ optical endpointing of web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6520834B1 (en) | 2000-08-09 | 2003-02-18 | Micron Technology, Inc. | Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates |
US6736869B1 (en) * | 2000-08-28 | 2004-05-18 | Micron Technology, Inc. | Method for forming a planarizing pad for planarization of microelectronic substrates |
US6838382B1 (en) * | 2000-08-28 | 2005-01-04 | Micron Technology, Inc. | Method and apparatus for forming a planarizing pad having a film and texture elements for planarization of microelectronic substrates |
US6592443B1 (en) | 2000-08-30 | 2003-07-15 | Micron Technology, Inc. | Method and apparatus for forming and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates |
US6609947B1 (en) * | 2000-08-30 | 2003-08-26 | Micron Technology, Inc. | Planarizing machines and control systems for mechanical and/or chemical-mechanical planarization of micro electronic substrates |
US6652764B1 (en) | 2000-08-31 | 2003-11-25 | Micron Technology, Inc. | Methods and apparatuses for making and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates |
US6623329B1 (en) | 2000-08-31 | 2003-09-23 | Micron Technology, Inc. | Method and apparatus for supporting a microelectronic substrate relative to a planarization pad |
US6679769B2 (en) | 2000-09-19 | 2004-01-20 | Rodel Holdings, Inc | Polishing pad having an advantageous micro-texture and methods relating thereto |
US6935013B1 (en) * | 2000-11-10 | 2005-08-30 | Hitachi Global Storage Technologies Netherlands B.V. | Apparatus and method for precise lapping of recessed and protruding elements in a workpiece |
US6811470B2 (en) | 2001-07-16 | 2004-11-02 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing shallow trench isolation substrates |
US6722943B2 (en) * | 2001-08-24 | 2004-04-20 | Micron Technology, Inc. | Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces |
US6866566B2 (en) * | 2001-08-24 | 2005-03-15 | Micron Technology, Inc. | Apparatus and method for conditioning a contact surface of a processing pad used in processing microelectronic workpieces |
US6677239B2 (en) | 2001-08-24 | 2004-01-13 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing |
US6666749B2 (en) | 2001-08-30 | 2003-12-23 | Micron Technology, Inc. | Apparatus and method for enhanced processing of microelectronic workpieces |
US7199056B2 (en) * | 2002-02-08 | 2007-04-03 | Applied Materials, Inc. | Low cost and low dishing slurry for polysilicon CMP |
US7131889B1 (en) * | 2002-03-04 | 2006-11-07 | Micron Technology, Inc. | Method for planarizing microelectronic workpieces |
US6541397B1 (en) * | 2002-03-29 | 2003-04-01 | Applied Materials, Inc. | Removable amorphous carbon CMP stop |
US6869335B2 (en) | 2002-07-08 | 2005-03-22 | Micron Technology, Inc. | Retaining rings, planarizing apparatuses including retaining rings, and methods for planarizing micro-device workpieces |
US7341502B2 (en) * | 2002-07-18 | 2008-03-11 | Micron Technology, Inc. | Methods and systems for planarizing workpieces, e.g., microelectronic workpieces |
US7169014B2 (en) * | 2002-07-18 | 2007-01-30 | Micron Technology, Inc. | Apparatuses for controlling the temperature of polishing pads used in planarizing micro-device workpieces |
US6860798B2 (en) * | 2002-08-08 | 2005-03-01 | Micron Technology, Inc. | Carrier assemblies, planarizing apparatuses including carrier assemblies, and methods for planarizing micro-device workpieces |
US7094695B2 (en) * | 2002-08-21 | 2006-08-22 | Micron Technology, Inc. | Apparatus and method for conditioning a polishing pad used for mechanical and/or chemical-mechanical planarization |
US7004817B2 (en) | 2002-08-23 | 2006-02-28 | Micron Technology, Inc. | Carrier assemblies, planarizing apparatuses including carrier assemblies, and methods for planarizing micro-device workpieces |
US7011566B2 (en) * | 2002-08-26 | 2006-03-14 | Micron Technology, Inc. | Methods and systems for conditioning planarizing pads used in planarizing substrates |
US6841991B2 (en) * | 2002-08-29 | 2005-01-11 | Micron Technology, Inc. | Planarity diagnostic system, E.G., for microelectronic component test systems |
US7008299B2 (en) * | 2002-08-29 | 2006-03-07 | Micron Technology, Inc. | Apparatus and method for mechanical and/or chemical-mechanical planarization of micro-device workpieces |
US7063597B2 (en) | 2002-10-25 | 2006-06-20 | Applied Materials | Polishing processes for shallow trench isolation substrates |
US7074114B2 (en) | 2003-01-16 | 2006-07-11 | Micron Technology, Inc. | Carrier assemblies, polishing machines including carrier assemblies, and methods for polishing micro-device workpieces |
US6884152B2 (en) | 2003-02-11 | 2005-04-26 | Micron Technology, Inc. | Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces |
US6872132B2 (en) * | 2003-03-03 | 2005-03-29 | Micron Technology, Inc. | Systems and methods for monitoring characteristics of a polishing pad used in polishing micro-device workpieces |
US6935929B2 (en) | 2003-04-28 | 2005-08-30 | Micron Technology, Inc. | Polishing machines including under-pads and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces |
US7131891B2 (en) * | 2003-04-28 | 2006-11-07 | Micron Technology, Inc. | Systems and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces |
US7763548B2 (en) * | 2003-08-06 | 2010-07-27 | Micron Technology, Inc. | Microfeature workpiece processing system for, e.g., semiconductor wafer analysis |
US7030603B2 (en) * | 2003-08-21 | 2006-04-18 | Micron Technology, Inc. | Apparatuses and methods for monitoring rotation of a conductive microfeature workpiece |
US6939211B2 (en) * | 2003-10-09 | 2005-09-06 | Micron Technology, Inc. | Planarizing solutions including abrasive elements, and methods for manufacturing and using such planarizing solutions |
US7086927B2 (en) * | 2004-03-09 | 2006-08-08 | Micron Technology, Inc. | Methods and systems for planarizing workpieces, e.g., microelectronic workpieces |
US7066792B2 (en) * | 2004-08-06 | 2006-06-27 | Micron Technology, Inc. | Shaped polishing pads for beveling microfeature workpiece edges, and associate system and methods |
US7033253B2 (en) * | 2004-08-12 | 2006-04-25 | Micron Technology, Inc. | Polishing pad conditioners having abrasives and brush elements, and associated systems and methods |
US20060088976A1 (en) * | 2004-10-22 | 2006-04-27 | Applied Materials, Inc. | Methods and compositions for chemical mechanical polishing substrates |
US7264539B2 (en) * | 2005-07-13 | 2007-09-04 | Micron Technology, Inc. | Systems and methods for removing microfeature workpiece surface defects |
US7438626B2 (en) * | 2005-08-31 | 2008-10-21 | Micron Technology, Inc. | Apparatus and method for removing material from microfeature workpieces |
US7326105B2 (en) * | 2005-08-31 | 2008-02-05 | Micron Technology, Inc. | Retaining rings, and associated planarizing apparatuses, and related methods for planarizing micro-device workpieces |
US7294049B2 (en) * | 2005-09-01 | 2007-11-13 | Micron Technology, Inc. | Method and apparatus for removing material from microfeature workpieces |
TW200736001A (en) * | 2006-03-27 | 2007-10-01 | Toshiba Kk | Polishing pad, method of polishing and polishing apparatus |
US7754612B2 (en) * | 2007-03-14 | 2010-07-13 | Micron Technology, Inc. | Methods and apparatuses for removing polysilicon from semiconductor workpieces |
KR20190035241A (ko) * | 2017-09-26 | 2019-04-03 | 삼성전자주식회사 | 화학 기계적 연마 공정의 온도 제어 방법, 이를 수행하기 위한 온도 제어 유닛, 및 이러한 온도 제어 유닛을 포함하는 화학 기계적 연마 장치 |
CN117733662B (zh) * | 2024-02-19 | 2024-04-16 | 南方科技大学 | 一种基于等离子体刻蚀和改性作用的金刚石抛光方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4910155A (en) * | 1988-10-28 | 1990-03-20 | International Business Machines Corporation | Wafer flood polishing |
US5020283A (en) * | 1990-01-22 | 1991-06-04 | Micron Technology, Inc. | Polishing pad with uniform abrasion |
US5234867A (en) * | 1992-05-27 | 1993-08-10 | Micron Technology, Inc. | Method for planarizing semiconductor wafers with a non-circular polishing pad |
US5104828A (en) * | 1990-03-01 | 1992-04-14 | Intel Corporation | Method of planarizing a dielectric formed over a semiconductor substrate |
US5036015A (en) * | 1990-09-24 | 1991-07-30 | Micron Technology, Inc. | Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers |
US5069002A (en) * | 1991-04-17 | 1991-12-03 | Micron Technology, Inc. | Apparatus for endpoint detection during mechanical planarization of semiconductor wafers |
MY114512A (en) * | 1992-08-19 | 2002-11-30 | Rodel Inc | Polymeric substrate with polymeric microelements |
US5232875A (en) * | 1992-10-15 | 1993-08-03 | Micron Technology, Inc. | Method and apparatus for improving planarity of chemical-mechanical planarization operations |
US5300155A (en) * | 1992-12-23 | 1994-04-05 | Micron Semiconductor, Inc. | IC chemical mechanical planarization process incorporating slurry temperature control |
US5575706A (en) * | 1996-01-11 | 1996-11-19 | Taiwan Semiconductor Manufacturing Company Ltd. | Chemical/mechanical planarization (CMP) apparatus and polish method |
US5647952A (en) * | 1996-04-01 | 1997-07-15 | Industrial Technology Research Institute | Chemical/mechanical polish (CMP) endpoint method |
-
1996
- 1996-05-21 US US08/651,896 patent/US5893754A/en not_active Expired - Lifetime
-
1997
- 1997-05-21 WO PCT/US1997/008786 patent/WO1997044160A1/en active IP Right Grant
- 1997-05-21 DE DE69720212T patent/DE69720212T2/de not_active Expired - Lifetime
- 1997-05-21 JP JP54277597A patent/JP4219984B2/ja not_active Expired - Fee Related
- 1997-05-21 KR KR10-1998-0709557A patent/KR100412165B1/ko not_active IP Right Cessation
- 1997-05-21 AT AT97927723T patent/ATE235347T1/de not_active IP Right Cessation
- 1997-05-21 EP EP97927723A patent/EP0907460B1/de not_active Expired - Lifetime
- 1997-05-21 AU AU32116/97A patent/AU3211697A/en not_active Abandoned
-
1999
- 1999-04-07 US US09/287,953 patent/US5981396A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2000511355A (ja) | 2000-08-29 |
EP0907460A1 (de) | 1999-04-14 |
EP0907460B1 (de) | 2003-03-26 |
AU3211697A (en) | 1997-12-09 |
KR100412165B1 (ko) | 2004-04-28 |
US5981396A (en) | 1999-11-09 |
DE69720212D1 (de) | 2003-04-30 |
JP4219984B2 (ja) | 2009-02-04 |
US5893754A (en) | 1999-04-13 |
WO1997044160A1 (en) | 1997-11-27 |
KR20000015996A (ko) | 2000-03-25 |
ATE235347T1 (de) | 2003-04-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69720212D1 (de) | Verfahren zur chemisch-mechanischen planarisierung von stopschicht halbleiterscheiben | |
ATE320881T1 (de) | Schleifmittel mit einem fenstersystem zum polieren von wafern und verfahren hierfür | |
DE69738133D1 (de) | Cmp methode von einem substrat mit einer polierscheibe mit flixiertem schleifmittel | |
ATE334176T1 (de) | Verfahren zum chemisch mechanisch polieren von materialien mit einer niedrigen dielektrizitätskonstanten | |
TW376350B (en) | Process for polishing a semiconductor device substrate | |
US6517426B2 (en) | Composite polishing pad for chemical-mechanical polishing | |
KR100267597B1 (ko) | 워크피스리테이닝기구및그의생산방법 | |
ATE168306T1 (de) | Vorrichtung zum chemisch-mechanischen polieren mit verbesserter verteilung der polierzusammensetzung | |
KR970030439A (ko) | 폴리싱방법, 반도체장치의 제조방법 및 반도체 제조장치 | |
KR101027190B1 (ko) | 견실한 밀봉 모서리를 갖는 하위 패드 | |
WO2002053322A3 (en) | System and method for polishing and planarization of semiconductor wafers using reduced surface area polishing pads | |
EP1138438A4 (de) | Polierkissen und poliervorrichtung | |
AU5532898A (en) | Composition for oxide cmp | |
ATE280014T1 (de) | Hin- und hergehende linear poliermaschine mit ladbarem halter | |
KR970061445A (ko) | 웨이퍼 및 기판의 재생방법 및 장치 | |
TW328149B (en) | Manufacturing method of wafer for silicon semiconductor discrete element | |
GB2329601A (en) | Methods and apparatus for the chemical mechanical planarization of electronic devices | |
US20020193059A1 (en) | Stacked polishing pad having sealed edge | |
TW376349B (en) | Planarizing apparatus and a method of its use | |
KR950007015A (ko) | 트렌치 평탄화법에 의해 서브 마이크론적으로 접합된 soi | |
DE60116148D1 (de) | System zur endpunktbestimmung beim chemisch-mechanischen polieren | |
US6197692B1 (en) | Semiconductor wafer planarizing device and method for planarizing a surface of semiconductor wafer by polishing it | |
ATE291277T1 (de) | Verfahren zum chemisch-mechanischen polieren von halbleitenden oder isolierenden schichten | |
WO2002020214A3 (en) | Method for polishing a memory or rigid disk with a polishing composition containing an oxidized halide and an acid | |
KR20190116923A (ko) | SiC 기판의 연마 방법 |