DE69726211D1 - Dünnschicht Elektronenemitter-Vorrichtung und Anwendungsgerät - Google Patents

Dünnschicht Elektronenemitter-Vorrichtung und Anwendungsgerät

Info

Publication number
DE69726211D1
DE69726211D1 DE69726211T DE69726211T DE69726211D1 DE 69726211 D1 DE69726211 D1 DE 69726211D1 DE 69726211 T DE69726211 T DE 69726211T DE 69726211 T DE69726211 T DE 69726211T DE 69726211 D1 DE69726211 D1 DE 69726211D1
Authority
DE
Germany
Prior art keywords
thin film
electron emitter
film electron
application device
application
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69726211T
Other languages
English (en)
Other versions
DE69726211T2 (de
Inventor
Toshiaki Kusunoki
Mutsumi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE69726211D1 publication Critical patent/DE69726211D1/de
Application granted granted Critical
Publication of DE69726211T2 publication Critical patent/DE69726211T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M16/00Structural combinations of different types of electrochemical generators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/30Cold cathodes, e.g. field-emissive cathode
    • H01J1/312Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of Metal-Insulator-Metal [MIM] type
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/3175Lithography
    • H01J2237/31777Lithography by projection
    • H01J2237/31781Lithography by projection from patterned cold cathode
    • H01J2237/31783M-I-M cathode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00Electron emission display panels, e.g. field emission display panels
DE69726211T 1996-03-22 1997-03-12 Dünnschicht Elektronenemitter-Vorrichtung und Anwendungsgerät Expired - Lifetime DE69726211T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP6583196 1996-03-22
JP6583196 1996-03-22
JP31450296A JP3633154B2 (ja) 1996-03-22 1996-11-26 薄膜型電子源および薄膜型電子源応用機器
JP31450296 1996-11-26

Publications (2)

Publication Number Publication Date
DE69726211D1 true DE69726211D1 (de) 2003-12-24
DE69726211T2 DE69726211T2 (de) 2004-09-09

Family

ID=26406981

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69726211T Expired - Lifetime DE69726211T2 (de) 1996-03-22 1997-03-12 Dünnschicht Elektronenemitter-Vorrichtung und Anwendungsgerät

Country Status (7)

Country Link
US (1) US5936257A (de)
EP (1) EP0797233B1 (de)
JP (1) JP3633154B2 (de)
KR (1) KR100421559B1 (de)
CN (1) CN1105392C (de)
DE (1) DE69726211T2 (de)
TW (1) TW355807B (de)

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JPH1167064A (ja) * 1997-08-08 1999-03-09 Pioneer Electron Corp 電子放出素子及びこれを用いた表示装置
JPH1167065A (ja) * 1997-08-08 1999-03-09 Pioneer Electron Corp 電子放出素子及びこれを用いた表示装置
EP0926698A3 (de) * 1997-12-25 2001-10-17 Pioneer Electronic Corporation Flacher Bildschirm mit Elektronenemittern
WO1999040601A1 (fr) * 1998-02-09 1999-08-12 Matsushita Electric Industrial Co., Ltd. Dispositif emetteur d'electrons, son procede de production, et son procede d'excitation; afficheur d'images comprenant ledit emetteur d'electrons et son procede de fabrication
US6875324B2 (en) 1998-06-17 2005-04-05 Tanaka Kikinzoku Kogyo K.K. Sputtering target material
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US6781305B1 (en) * 1998-12-25 2004-08-24 Sanyo Electric Co., Ltd. Organic electroluminescent device having negative electrode containing a selective combination of elements
JP3323853B2 (ja) * 1999-02-25 2002-09-09 キヤノン株式会社 電子放出素子、電子源及び画像形成装置の製造方法
JP2002543575A (ja) * 1999-05-03 2002-12-17 エテック システムズ インコーポレイテッド 基板上の電荷の蓄積を減少させる装置及び方法
US6818941B1 (en) 1999-05-28 2004-11-16 Hitachi, Ltd. Thin film electron emitter, display device using the same and applied machine
JP3878365B2 (ja) 1999-09-09 2007-02-07 株式会社日立製作所 画像表示装置および画像表示装置の製造方法
JP3863325B2 (ja) * 1999-09-10 2006-12-27 株式会社日立製作所 画像表示装置
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JP4253416B2 (ja) * 2000-01-14 2009-04-15 パイオニア株式会社 電子放出素子を用いた撮像素子
US6617774B1 (en) * 2000-04-10 2003-09-09 Hitachi, Ltd. Thin-film electron emitter device having multi-layered electron emission areas
JP3658342B2 (ja) 2000-05-30 2005-06-08 キヤノン株式会社 電子放出素子、電子源及び画像形成装置、並びにテレビジョン放送表示装置
JP2004503061A (ja) 2000-07-11 2004-01-29 エコル ポリテクニック フェデラル ドゥ ローザンヌ 電子ビームフォトリソグラフィ用ホット電子放出アレイ及び表示スクリーン
JP3610325B2 (ja) 2000-09-01 2005-01-12 キヤノン株式会社 電子放出素子、電子源及び画像形成装置の製造方法
JP3658346B2 (ja) 2000-09-01 2005-06-08 キヤノン株式会社 電子放出素子、電子源および画像形成装置、並びに電子放出素子の製造方法
JP3639809B2 (ja) 2000-09-01 2005-04-20 キヤノン株式会社 電子放出素子,電子放出装置,発光装置及び画像表示装置
JP3639808B2 (ja) 2000-09-01 2005-04-20 キヤノン株式会社 電子放出素子及び電子源及び画像形成装置及び電子放出素子の製造方法
JP3634781B2 (ja) 2000-09-22 2005-03-30 キヤノン株式会社 電子放出装置、電子源、画像形成装置及びテレビジョン放送表示装置
JP2002203499A (ja) * 2000-12-28 2002-07-19 Pioneer Electronic Corp 電子放出素子フラットパネル表示装置
JP3768908B2 (ja) 2001-03-27 2006-04-19 キヤノン株式会社 電子放出素子、電子源、画像形成装置
JP3703415B2 (ja) 2001-09-07 2005-10-05 キヤノン株式会社 電子放出素子、電子源及び画像形成装置、並びに電子放出素子及び電子源の製造方法
JP3605105B2 (ja) 2001-09-10 2004-12-22 キヤノン株式会社 電子放出素子、電子源、発光装置、画像形成装置および基板の各製造方法
US6847045B2 (en) * 2001-10-12 2005-01-25 Hewlett-Packard Development Company, L.P. High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission
EP1421594B1 (de) * 2001-12-06 2013-10-09 Pioneer Corporation Elektronenemittierende vorrichtung,verfahren zur herstellung derselben und damit ausgestattetes anzeigegerät
KR20040010026A (ko) * 2002-07-25 2004-01-31 가부시키가이샤 히타치세이사쿠쇼 전계방출형 화상표시장치
EP1553616A4 (de) * 2002-10-18 2007-10-10 Hitachi Ltd Flachdisplay des kaltkathodentyps
TW568882B (en) * 2002-12-20 2004-01-01 Ind Tech Res Inst Self-organized nano-interfacial structure applied to electric device
JP4203954B2 (ja) * 2002-12-26 2009-01-07 株式会社日立製作所 画像表示装置
JP2005228556A (ja) 2004-02-12 2005-08-25 Pioneer Electronic Corp 電子放出素子を用いた光電変換装置および撮像装置
US7795617B2 (en) * 2004-10-29 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, IC card, IC tag, RFID, transponder, paper money, valuable securities, passport, electronic device, bag, and clothes
US20060151777A1 (en) * 2005-01-12 2006-07-13 Naberhuis Steven L Multi-layer thin film in a ballistic electron emitter
KR20060104657A (ko) 2005-03-31 2006-10-09 삼성에스디아이 주식회사 전자 방출 소자
JP2007189199A (ja) * 2005-12-12 2007-07-26 Tdk Corp キャパシタおよびその製造方法
KR100803207B1 (ko) * 2005-12-21 2008-02-14 삼성전자주식회사 표면전자 방출소자 및 그를 구비한 디스플레이 장치
JP4670717B2 (ja) * 2006-04-14 2011-04-13 株式会社日立製作所 薄膜型電子源
TW201002722A (en) 2008-01-22 2010-01-16 Ricoh Co Ltd Benzobisthiazole compound, benzobisthiazole polymer, organic film including the compound or polymer and transistor including the organic film
KR100975204B1 (ko) * 2008-08-04 2010-08-10 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
CN101714496B (zh) * 2009-11-10 2014-04-23 西安交通大学 利用多层薄膜型电子源的平面气体激发光源
US9564270B2 (en) 2013-12-27 2017-02-07 Tdk Corporation Thin film capacitor
JP6446877B2 (ja) 2014-07-16 2019-01-09 Tdk株式会社 薄膜キャパシタ
JP6365216B2 (ja) 2014-10-15 2018-08-01 Tdk株式会社 薄膜キャパシタ
JP6641872B2 (ja) 2015-10-15 2020-02-05 Tdk株式会社 電子デバイスシート
TWI700799B (zh) * 2016-10-04 2020-08-01 聯華電子股份有限公司 導電結構、包含導電結構之佈局結構以及導電結構之製作方法

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WO1994020975A1 (en) * 1993-03-11 1994-09-15 Fed Corporation Emitter tip structure and field emission device comprising same, and method of making same
US5534743A (en) * 1993-03-11 1996-07-09 Fed Corporation Field emission display devices, and field emission electron beam source and isolation structure components therefor
JP3390495B2 (ja) * 1993-08-30 2003-03-24 株式会社日立製作所 Mim構造素子およびその製造方法
JP3746080B2 (ja) * 1994-02-15 2006-02-15 株式会社日立製作所 薄膜型電子源の駆動方法
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Also Published As

Publication number Publication date
EP0797233A2 (de) 1997-09-24
JP3633154B2 (ja) 2005-03-30
DE69726211T2 (de) 2004-09-09
EP0797233A3 (de) 1999-12-22
TW355807B (en) 1999-04-11
KR970067995A (ko) 1997-10-13
CN1105392C (zh) 2003-04-09
JPH09320456A (ja) 1997-12-12
US5936257A (en) 1999-08-10
EP0797233B1 (de) 2003-11-19
KR100421559B1 (ko) 2004-05-20
CN1165393A (zh) 1997-11-19

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Legal Events

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8364 No opposition during term of opposition