DE69727744D1 - Zum Betrieb mit niedrigen Versorgungsspannungen geeigneter Speicher und Leseverstärker dafür - Google Patents
Zum Betrieb mit niedrigen Versorgungsspannungen geeigneter Speicher und Leseverstärker dafürInfo
- Publication number
- DE69727744D1 DE69727744D1 DE69727744T DE69727744T DE69727744D1 DE 69727744 D1 DE69727744 D1 DE 69727744D1 DE 69727744 T DE69727744 T DE 69727744T DE 69727744 T DE69727744 T DE 69727744T DE 69727744 D1 DE69727744 D1 DE 69727744D1
- Authority
- DE
- Germany
- Prior art keywords
- sense amplifiers
- supply voltages
- low supply
- memories
- suitable memories
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/703,176 US5729493A (en) | 1996-08-23 | 1996-08-23 | Memory suitable for operation at low power supply voltages and sense amplifier therefor |
US703176 | 1996-08-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69727744D1 true DE69727744D1 (de) | 2004-04-01 |
DE69727744T2 DE69727744T2 (de) | 2004-08-12 |
Family
ID=24824347
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69727744T Expired - Lifetime DE69727744T2 (de) | 1996-08-23 | 1997-08-05 | Zum Betrieb mit niedrigen Versorgungsspannungen geeigneter Speicher und Leseverstärker dafür |
Country Status (8)
Country | Link |
---|---|
US (2) | US5729493A (de) |
EP (1) | EP0828253B1 (de) |
JP (1) | JP3663039B2 (de) |
KR (1) | KR100439783B1 (de) |
CN (1) | CN1105389C (de) |
DE (1) | DE69727744T2 (de) |
SG (1) | SG71717A1 (de) |
TW (1) | TW337020B (de) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10162573A (ja) * | 1996-11-29 | 1998-06-19 | Nec Corp | 半導体記憶装置 |
DE19735136C1 (de) * | 1997-08-13 | 1998-10-01 | Siemens Ag | Schaltungsanordnung für die Bewertung des Dateninhalts von Speicherzellen |
US6114724A (en) * | 1998-03-31 | 2000-09-05 | Cypress Semiconductor Corporation | Nonvolatile semiconductor memory cell with select gate |
US6292117B1 (en) * | 1999-09-01 | 2001-09-18 | Hewlett-Packard Company | Integrated adjustable current to voltage converter and digital quadrature generator in a printer paper positioning system |
IT1313873B1 (it) * | 1999-11-12 | 2002-09-24 | St Microelectronics Srl | Architettura per la gestione delle tensioni interne in una memoria nonvolatile, in particolare di tipo flash dual-work a singola tensione di |
FR2801719B1 (fr) * | 1999-11-30 | 2002-03-01 | St Microelectronics Sa | Dispositif de lecture pour memoire en circuit integre |
KR100635195B1 (ko) * | 2000-12-29 | 2006-10-16 | 주식회사 하이닉스반도체 | 플래쉬 메모리 장치 |
JP2002230989A (ja) | 2001-01-31 | 2002-08-16 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
US6707715B2 (en) | 2001-08-02 | 2004-03-16 | Stmicroelectronics, Inc. | Reference generator circuit and method for nonvolatile memory devices |
DE60224406T2 (de) * | 2001-08-08 | 2008-12-24 | Nxp B.V. | Direktzugriffspeicheranordnungen mit einem diodenpuffer |
KR100406539B1 (ko) * | 2001-12-24 | 2003-11-20 | 주식회사 하이닉스반도체 | 센스앰프 오버 드라이버 스킴에서의 소모전류 감소를 위한반도체 메모리 장치 및 그 방법 |
US6667910B2 (en) * | 2002-05-10 | 2003-12-23 | Micron Technology, Inc. | Method and apparatus for discharging an array well in a flash memory device |
JP4052895B2 (ja) * | 2002-08-07 | 2008-02-27 | シャープ株式会社 | メモリセル情報の読み出し回路および半導体記憶装置 |
US6785177B2 (en) * | 2002-12-10 | 2004-08-31 | Freescale Semiconductor Inc. | Method of accessing memory and device thereof |
JP4346482B2 (ja) * | 2004-03-25 | 2009-10-21 | Necエレクトロニクス株式会社 | 不揮発性記憶装置及び不揮発性記憶装置の検証方法 |
US7212447B2 (en) * | 2005-08-04 | 2007-05-01 | Micron Technology, Inc. | NAND flash memory cell programming |
US7489546B2 (en) | 2005-12-20 | 2009-02-10 | Micron Technology, Inc. | NAND architecture memory devices and operation |
JP2007272943A (ja) * | 2006-03-30 | 2007-10-18 | Matsushita Electric Ind Co Ltd | 不揮発性半導体記憶装置 |
US7450422B2 (en) * | 2006-05-11 | 2008-11-11 | Micron Technology, Inc. | NAND architecture memory devices and operation |
US7505341B2 (en) * | 2006-05-17 | 2009-03-17 | Micron Technology, Inc. | Low voltage sense amplifier and sensing method |
US7279959B1 (en) | 2006-05-26 | 2007-10-09 | Freescale Semiconductor, Inc. | Charge pump system with reduced ripple and method therefor |
US7369450B2 (en) | 2006-05-26 | 2008-05-06 | Freescale Semiconductor, Inc. | Nonvolatile memory having latching sense amplifier and method of operation |
US7551467B2 (en) * | 2006-08-04 | 2009-06-23 | Micron Technology, Inc. | Memory device architectures and operation |
KR100805838B1 (ko) * | 2006-08-10 | 2008-02-21 | 삼성전자주식회사 | 엑스아이피 플래시 메모리 장치 및 그 프로그램 방법 |
US8154936B2 (en) * | 2008-12-30 | 2012-04-10 | Stmicroelectronics Pvt. Ltd. | Single-ended bit line based storage system |
US8879332B2 (en) * | 2012-02-10 | 2014-11-04 | Macronix International Co., Ltd. | Flash memory with read tracking clock and method thereof |
US10720215B2 (en) | 2014-09-06 | 2020-07-21 | Fu-Chang Hsu | Methods and apparatus for writing nonvolatile 3D NAND flash memory using multiple-page programming |
US10242743B2 (en) * | 2014-09-06 | 2019-03-26 | NEO Semiconductor, Inc. | Method and apparatus for writing nonvolatile memory using multiple-page programming |
CN105741874B (zh) | 2014-12-08 | 2019-10-25 | 中芯国际集成电路制造(上海)有限公司 | 用于快闪存储器的双位线读出电路和读出方法 |
ITUB20153235A1 (it) | 2015-08-26 | 2017-02-26 | St Microelectronics Srl | Decodificatore di riga per un dispositivo di memoria non volatile e relativo dispositivo di memoria non volatile |
US10090027B2 (en) | 2016-05-25 | 2018-10-02 | Ememory Technology Inc. | Memory system with low read power |
US10534554B2 (en) * | 2017-10-13 | 2020-01-14 | Silicon Storage Technology, Inc. | Anti-hacking mechanisms for flash memory device |
US10340794B1 (en) | 2018-06-21 | 2019-07-02 | Linear Technology Llc | Reverse capacitor voltage balancing for high current high voltage charge pump circuits |
EP3736813A1 (de) * | 2019-05-08 | 2020-11-11 | Ferroelectric Memory GmbH | Spannungsversorgungsschaltung, speicherzellenanordnung und verfahren zum betrieb einer speicherzellenanordnung |
US11243559B2 (en) * | 2019-05-29 | 2022-02-08 | Drexel University | Flexible on-chip power and clock |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4661931A (en) * | 1985-08-05 | 1987-04-28 | Motorola, Inc. | Asynchronous row and column control |
US4713797A (en) * | 1985-11-25 | 1987-12-15 | Motorola Inc. | Current mirror sense amplifier for a non-volatile memory |
JPH0682520B2 (ja) * | 1987-07-31 | 1994-10-19 | 株式会社東芝 | 半導体メモリ |
JP2507529B2 (ja) * | 1988-03-31 | 1996-06-12 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JPH01271996A (ja) * | 1988-04-22 | 1989-10-31 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
EP0347935B1 (de) * | 1988-06-24 | 1995-07-26 | Kabushiki Kaisha Toshiba | Halbleiterspeicheranordnung |
GB2221111B (en) * | 1988-07-23 | 1993-01-06 | Motorola Inc | Eprom low voltage sense amplifier |
US5237534A (en) * | 1989-04-27 | 1993-08-17 | Kabushiki Kaisha Toshiba | Data sense circuit for a semiconductor nonvolatile memory device |
US5153853A (en) * | 1990-09-20 | 1992-10-06 | Sharp Kabushiki Kaisha | Method and apparatus for measuring EEPROM threshold voltages in a nonvolatile DRAM memory device |
JP3160316B2 (ja) * | 1991-07-25 | 2001-04-25 | 株式会社東芝 | 不揮発性半導体記憶装置 |
FR2682505B1 (fr) * | 1991-10-11 | 1996-09-27 | Sgs Thomson Microelectronics | Dispositif pour detecter le contenu de cellules au sein d'une memoire, notamment une memoire eprom, procede mis en óoeuvre dans ce dispositif, et memoire munie de ce dispositif. |
JP2564067B2 (ja) * | 1992-01-09 | 1996-12-18 | 株式会社東芝 | センス回路を有する読み出し出力回路 |
JPH06290591A (ja) * | 1993-03-31 | 1994-10-18 | Sony Corp | 半導体不揮発性記憶装置 |
US5471422A (en) * | 1994-04-11 | 1995-11-28 | Motorola, Inc. | EEPROM cell with isolation transistor and methods for making and operating the same |
GB9423032D0 (en) * | 1994-11-15 | 1995-01-04 | Sgs Thomson Microelectronics | Bit line sensing in a memory array |
-
1996
- 1996-08-23 US US08/703,176 patent/US5729493A/en not_active Expired - Lifetime
-
1997
- 1997-04-21 US US08/845,097 patent/US5754482A/en not_active Expired - Lifetime
- 1997-08-05 DE DE69727744T patent/DE69727744T2/de not_active Expired - Lifetime
- 1997-08-05 EP EP97113470A patent/EP0828253B1/de not_active Expired - Lifetime
- 1997-08-06 TW TW086111274A patent/TW337020B/zh not_active IP Right Cessation
- 1997-08-07 SG SG1997002812A patent/SG71717A1/en unknown
- 1997-08-19 JP JP23775597A patent/JP3663039B2/ja not_active Expired - Fee Related
- 1997-08-22 CN CN97117646A patent/CN1105389C/zh not_active Expired - Fee Related
- 1997-08-23 KR KR1019970040914A patent/KR100439783B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US5754482A (en) | 1998-05-19 |
CN1176466A (zh) | 1998-03-18 |
TW337020B (en) | 1998-07-21 |
EP0828253B1 (de) | 2004-02-25 |
CN1105389C (zh) | 2003-04-09 |
EP0828253A3 (de) | 1999-06-16 |
SG71717A1 (en) | 2000-04-18 |
JPH1083682A (ja) | 1998-03-31 |
US5729493A (en) | 1998-03-17 |
EP0828253A2 (de) | 1998-03-11 |
DE69727744T2 (de) | 2004-08-12 |
KR100439783B1 (ko) | 2004-10-12 |
KR19980019017A (ko) | 1998-06-05 |
JP3663039B2 (ja) | 2005-06-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US |