DE69735323D1 - Halbleiteranordnung und deren Herstellungsverfahren - Google Patents

Halbleiteranordnung und deren Herstellungsverfahren

Info

Publication number
DE69735323D1
DE69735323D1 DE69735323T DE69735323T DE69735323D1 DE 69735323 D1 DE69735323 D1 DE 69735323D1 DE 69735323 T DE69735323 T DE 69735323T DE 69735323 T DE69735323 T DE 69735323T DE 69735323 D1 DE69735323 D1 DE 69735323D1
Authority
DE
Germany
Prior art keywords
production method
semiconductor arrangement
semiconductor
arrangement
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69735323T
Other languages
English (en)
Other versions
DE69735323T2 (de
Inventor
Junji Hirase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69735323D1 publication Critical patent/DE69735323D1/de
Publication of DE69735323T2 publication Critical patent/DE69735323T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
DE69735323T 1996-09-05 1997-09-03 Halbleiteranordnung und deren Herstellungsverfahren Expired - Lifetime DE69735323T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP23485996 1996-09-05
JP23485996 1996-09-05

Publications (2)

Publication Number Publication Date
DE69735323D1 true DE69735323D1 (de) 2006-04-27
DE69735323T2 DE69735323T2 (de) 2006-11-02

Family

ID=16977474

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69735323T Expired - Lifetime DE69735323T2 (de) 1996-09-05 1997-09-03 Halbleiteranordnung und deren Herstellungsverfahren

Country Status (7)

Country Link
US (1) US6066522A (de)
EP (1) EP0831518B1 (de)
JP (1) JP3031880B2 (de)
KR (1) KR100286969B1 (de)
CN (1) CN1087499C (de)
DE (1) DE69735323T2 (de)
TW (1) TW362275B (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100260559B1 (ko) * 1997-12-29 2000-07-01 윤종용 비휘발성 메모리 장치의 웰 구조 및 그 제조 방법
KR100282706B1 (ko) * 1998-07-07 2001-03-02 윤종용 반도체 장치의 제조 방법
JP3733252B2 (ja) * 1998-11-02 2006-01-11 セイコーエプソン株式会社 半導体記憶装置及びその製造方法
JP4517410B2 (ja) * 1998-11-25 2010-08-04 エルピーダメモリ株式会社 半導体装置
US6144076A (en) * 1998-12-08 2000-11-07 Lsi Logic Corporation Well formation For CMOS devices integrated circuit structures
JP3348782B2 (ja) 1999-07-22 2002-11-20 日本電気株式会社 半導体装置の製造方法
US20040053439A1 (en) * 2002-09-17 2004-03-18 Infineon Technologies North America Corp. Method for producing low-resistance ohmic contacts between substrates and wells in CMOS integrated circuits
US7442996B2 (en) 2006-01-20 2008-10-28 International Business Machines Corporation Structure and method for enhanced triple well latchup robustness
US20150364475A1 (en) * 2013-01-28 2015-12-17 Yasushi Yamazaki Semiconductor device and method for producing same
KR101450436B1 (ko) * 2013-03-04 2014-10-13 주식회사 동부하이텍 반도체 소자의 웰 형성 방법
JP2014207361A (ja) * 2013-04-15 2014-10-30 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP6255915B2 (ja) * 2013-11-07 2018-01-10 富士通セミコンダクター株式会社 半導体装置の製造方法及び半導体装置
CN105336691B (zh) * 2014-07-31 2018-06-15 无锡华润上华科技有限公司 阱区制备方法
WO2016138924A1 (en) 2015-03-02 2016-09-09 Arcelik Anonim Sirketi A laundry machine with an improved fluid distribution load balance system
US9831134B1 (en) * 2016-09-28 2017-11-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device having deep wells

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0671067B2 (ja) * 1985-11-20 1994-09-07 株式会社日立製作所 半導体装置
US5354699A (en) * 1987-05-13 1994-10-11 Hitachi, Ltd. Method of manufacturing semiconductor integrated circuit device
JPH01161752A (ja) * 1987-12-18 1989-06-26 Toshiba Corp 半導体装置製造方法
US5116777A (en) * 1990-04-30 1992-05-26 Sgs-Thomson Microelectronics, Inc. Method for fabricating semiconductor devices by use of an N+ buried layer for complete isolation
JP2965783B2 (ja) * 1991-07-17 1999-10-18 三菱電機株式会社 半導体装置およびその製造方法
JPH05198666A (ja) * 1991-11-20 1993-08-06 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5475335A (en) * 1994-04-01 1995-12-12 National Semiconductor Corporation High voltage cascaded charge pump
KR0131723B1 (ko) * 1994-06-08 1998-04-14 김주용 반도체소자 및 그 제조방법
US5501993A (en) * 1994-11-22 1996-03-26 Genus, Inc. Method of constructing CMOS vertically modulated wells (VMW) by clustered MeV BILLI (buried implanted layer for lateral isolation) implantation
JP2776350B2 (ja) * 1995-12-18 1998-07-16 日本電気株式会社 半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
CN1175796A (zh) 1998-03-11
KR100286969B1 (ko) 2001-04-16
JPH10135351A (ja) 1998-05-22
KR19980024386A (ko) 1998-07-06
TW362275B (en) 1999-06-21
EP0831518B1 (de) 2006-03-01
JP3031880B2 (ja) 2000-04-10
US6066522A (en) 2000-05-23
CN1087499C (zh) 2002-07-10
DE69735323T2 (de) 2006-11-02
EP0831518A1 (de) 1998-03-25

Similar Documents

Publication Publication Date Title
DE69739354D1 (de) Halbleiteranordnung und deren Herstellungsverfahren
DE69533233D1 (de) Halbleitervorrichtung und deren Herstellungsverfahren
DE69510337T2 (de) Halbleiterspeicheranordnungen und herstellungsverfahren
DE69435045D1 (de) Halbleiter-Anordnung und Herstellungsverfahren dafür
DE69834561D1 (de) Halbleiteranordnung und herstellungsverfahren dafür
KR950034612A (ko) 반도체 구조물 및 그 제조 방법
DE69818185D1 (de) Halbleiterverpackung und deren Herstellungsmethode
DE69935095D1 (de) Halbleiterbauelement und deren Herstellungsverfahren
DE69721411D1 (de) Halbleiteranordnung und Herstellungsverfahren dafür
DE69831903D1 (de) Halbleiterbauelement mit Kondensator und deren Herstellungsmethode
DE69738012D1 (de) Halbleitervorrichtung und deren Herstellungsverfahren
DE69534938D1 (de) Photovoltaisches Bauelement und Herstellungsverfahren
DE69533511D1 (de) Lichtemittierende halbleitervorrichtung und herstellungsverfahren
DE69527330T2 (de) Halbleiteranordnung und Herstellungsverfahren
DE69733450D1 (de) Thermoelektrischer Halbleiter und Herstellungsverfahren dafür
DE69736151D1 (de) Photovoltaische Anordnung und Herstellungsverfahren
DE69522514T2 (de) Halbleiteranordnung und Herstellungsverfahren
DE69526539D1 (de) Halbleiteranordnung und Herstellungsverfahren
DE69737588D1 (de) Halbleiteranordnung und Herstellungsverfahren dafür
KR960009107A (ko) 반도체장치와 그 제조방법
DE69424728T2 (de) Halbleiteranordnung und zugehörige Herstellungsmethode
DE69429906T2 (de) Halbleiterstruktur und Herstellungsverfahren
DE69904731D1 (de) Feinzerkleinerer und feinzerkleinerungsverfahren
DE69420944T2 (de) Halbleitervorrichtung und herstellungsverfahren
DE69735323D1 (de) Halbleiteranordnung und deren Herstellungsverfahren

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP