DE69736523D1 - Verbesserte integrierte schaltungsstrukturen und verfahren zum erleichtern der genauen messung der integrierten schaltungen - Google Patents

Verbesserte integrierte schaltungsstrukturen und verfahren zum erleichtern der genauen messung der integrierten schaltungen

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Publication number
DE69736523D1
DE69736523D1 DE69736523T DE69736523T DE69736523D1 DE 69736523 D1 DE69736523 D1 DE 69736523D1 DE 69736523 T DE69736523 T DE 69736523T DE 69736523 T DE69736523 T DE 69736523T DE 69736523 D1 DE69736523 D1 DE 69736523D1
Authority
DE
Germany
Prior art keywords
accurate measurement
circuit structures
integrated circuit
facilitating accurate
integrated circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69736523T
Other languages
English (en)
Inventor
C Kalb
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
California Micro Devices Corp
Original Assignee
California Micro Devices Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by California Micro Devices Corp filed Critical California Micro Devices Corp
Application granted granted Critical
Publication of DE69736523D1 publication Critical patent/DE69736523D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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    • H01L2224/161—Disposition
    • H01L2224/16104—Disposition relative to the bonding area, e.g. bond pad
    • H01L2224/16106—Disposition relative to the bonding area, e.g. bond pad the bump connector connecting one bonding area to at least two respective bonding areas
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
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    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/12—Passive devices, e.g. 2 terminal devices
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
DE69736523T 1996-08-23 1997-08-21 Verbesserte integrierte schaltungsstrukturen und verfahren zum erleichtern der genauen messung der integrierten schaltungen Expired - Fee Related DE69736523D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2447896P 1996-08-23 1996-08-23
PCT/US1997/014849 WO1998008250A1 (en) 1996-08-23 1997-08-21 Improved integrated circuit structures and methods to facilitate accurate measurement of the ic devices

Publications (1)

Publication Number Publication Date
DE69736523D1 true DE69736523D1 (de) 2006-09-28

Family

ID=21820795

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69736523T Expired - Fee Related DE69736523D1 (de) 1996-08-23 1997-08-21 Verbesserte integrierte schaltungsstrukturen und verfahren zum erleichtern der genauen messung der integrierten schaltungen

Country Status (6)

Country Link
US (1) US6262434B1 (de)
EP (1) EP0946980B1 (de)
JP (1) JP2000517103A (de)
AU (1) AU4084697A (de)
DE (1) DE69736523D1 (de)
WO (1) WO1998008250A1 (de)

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US6510503B2 (en) * 1998-07-27 2003-01-21 Mosaid Technologies Incorporated High bandwidth memory interface
GB9922763D0 (en) 1999-09-28 1999-11-24 Koninkl Philips Electronics Nv Semiconductor devices
DE10247528A1 (de) * 2002-10-11 2004-01-08 Infineon Technologies Ag Integrierte Schaltung und Verfahren zum Herstellen derselben
US7064434B2 (en) * 2003-11-26 2006-06-20 Atmel Corporation Customized microelectronic device and method for making customized electrical interconnections
CN1730476B (zh) * 2004-08-06 2011-04-06 中国医学科学院药物研究所 芳胺酮类化合物、其合成方法、含有其的药物组合物及用途
US20060151785A1 (en) * 2005-01-13 2006-07-13 Campbell Robert J Semiconductor device with split pad design
JP5023529B2 (ja) * 2006-03-27 2012-09-12 株式会社日立製作所 半導体装置
JP4711940B2 (ja) * 2006-12-08 2011-06-29 株式会社東芝 半導体集積回路およびこの半導体集積回路の終端抵抗の測定方法

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US3396312A (en) 1965-06-30 1968-08-06 Texas Instruments Inc Air-isolated integrated circuits
US3766308A (en) * 1972-05-25 1973-10-16 Microsystems Int Ltd Joining conductive elements on microelectronic devices
JPS5555541A (en) 1978-10-20 1980-04-23 Hitachi Ltd Semiconductor element
US4298856A (en) * 1979-09-04 1981-11-03 Western Electric Company, Incorporated Metallized resistor and methods of manufacturing and adjusting the resistance of same
US4275404A (en) 1979-10-05 1981-06-23 Bell Telephone Laboratories, Incorporated Monolithic opto-isolator
JPS5759349A (en) 1980-09-29 1982-04-09 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS60176217A (ja) 1984-02-22 1985-09-10 松下電器産業株式会社 アルミ電解コンデンサ
JPS6236835A (ja) * 1985-08-09 1987-02-17 Sanyo Electric Co Ltd 集積回路装置
US4939616A (en) 1988-11-01 1990-07-03 Texas Instruments Incorporated Circuit structure with enhanced electrostatic discharge protection
US4929923A (en) * 1989-05-26 1990-05-29 Harris Corporation Thin film resistors and method of trimming
US5298790A (en) 1990-04-03 1994-03-29 International Business Machines Corporation Reactive ion etching buffer mask
US5268589A (en) 1990-09-28 1993-12-07 Siemens Aktiengesellschaft Semiconductor chip having at least one electrical resistor means
JP2568748B2 (ja) * 1990-10-30 1997-01-08 三菱電機株式会社 半導体装置
JP2637662B2 (ja) * 1992-02-25 1997-08-06 ローム株式会社 チップ型複合電子部品の製造方法及びチップ型ネットワーク抵抗器の製造方法
JPH0689962A (ja) * 1992-02-28 1994-03-29 Mega Chips:Kk 半導体装置
JP3519453B2 (ja) * 1994-06-20 2004-04-12 富士通株式会社 半導体装置
US5683928A (en) * 1994-12-05 1997-11-04 General Electric Company Method for fabricating a thin film resistor
US5675310A (en) * 1994-12-05 1997-10-07 General Electric Company Thin film resistors on organic surfaces
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US5547896A (en) * 1995-02-13 1996-08-20 Harris Corporation Direct etch for thin film resistor using a hard mask

Also Published As

Publication number Publication date
JP2000517103A (ja) 2000-12-19
AU4084697A (en) 1998-03-06
EP0946980A1 (de) 1999-10-06
US6262434B1 (en) 2001-07-17
EP0946980A4 (de) 2001-04-18
EP0946980B1 (de) 2006-08-16
WO1998008250A1 (en) 1998-02-26

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