DE69808192D1 - Intern optisch gepumpter, feldmodulierter, oberflächenemittierender Laser mit vertikalem Resonator - Google Patents
Intern optisch gepumpter, feldmodulierter, oberflächenemittierender Laser mit vertikalem ResonatorInfo
- Publication number
- DE69808192D1 DE69808192D1 DE69808192T DE69808192T DE69808192D1 DE 69808192 D1 DE69808192 D1 DE 69808192D1 DE 69808192 T DE69808192 T DE 69808192T DE 69808192 T DE69808192 T DE 69808192T DE 69808192 D1 DE69808192 D1 DE 69808192D1
- Authority
- DE
- Germany
- Prior art keywords
- modulated
- field
- emitting laser
- optically pumped
- vertical resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
- H01S5/426—Vertically stacked cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2302/00—Amplification / lasing wavelength
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0614—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by electric field, i.e. whereby an additional electric field is used to tune the bandgap, e.g. using the Stark-effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
- H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB9714820.9A GB9714820D0 (en) | 1997-07-14 | 1997-07-14 | Field modulated vertical cavity surface-emitting laser with internal optical pumping |
GBGB9718082.2A GB9718082D0 (en) | 1997-08-27 | 1997-08-27 | Field modulated vertical cavity surface-emitting laser with internal optical pumping |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69808192D1 true DE69808192D1 (de) | 2002-10-31 |
DE69808192T2 DE69808192T2 (de) | 2003-04-30 |
Family
ID=26311881
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69808192T Expired - Fee Related DE69808192T2 (de) | 1997-07-14 | 1998-07-13 | Intern optisch gepumpter, feldmodulierter, oberflächenemittierender Laser mit vertikalem Resonator |
Country Status (4)
Country | Link |
---|---|
US (1) | US6285704B1 (de) |
EP (1) | EP0892474B1 (de) |
CA (1) | CA2242670A1 (de) |
DE (1) | DE69808192T2 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6849862B2 (en) * | 1997-11-18 | 2005-02-01 | Technologies And Devices International, Inc. | III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer |
US6483859B1 (en) | 1999-06-24 | 2002-11-19 | Lockheed Martin Corporation | System and method for high-speed laser detection of ultrasound |
US7286241B2 (en) * | 1999-06-24 | 2007-10-23 | Lockheed Martin Corporation | System and method for high-speed laser detection of ultrasound |
US6795477B1 (en) * | 1999-08-12 | 2004-09-21 | Cortek Inc. | Method for modulating an optically pumped, tunable vertical cavity surface emitting laser (VCSEL) |
US6424669B1 (en) * | 1999-10-29 | 2002-07-23 | E20 Communications, Inc. | Integrated optically pumped vertical cavity surface emitting laser |
WO2001031756A1 (en) * | 1999-10-29 | 2001-05-03 | E20 Communications, Inc. | Modulated integrated optically pumped vertical cavity surface emitting lasers |
JP2001223429A (ja) * | 2000-02-09 | 2001-08-17 | Fuji Photo Film Co Ltd | 半導体レーザ装置 |
DE10108079A1 (de) * | 2000-05-30 | 2002-09-12 | Osram Opto Semiconductors Gmbh | Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung |
US6816525B2 (en) | 2000-09-22 | 2004-11-09 | Andreas Stintz | Quantum dot lasers |
US6600169B2 (en) * | 2000-09-22 | 2003-07-29 | Andreas Stintz | Quantum dash device |
US6553051B1 (en) * | 2000-10-31 | 2003-04-22 | Agilent Technologies, Inc. | System for optically pumping a long wavelength laser using a short wavelength laser |
WO2002071562A2 (en) * | 2001-03-02 | 2002-09-12 | Science & Technology Corporation @ Unm | Quantum dot vertical cavity surface emitting laser |
US6556610B1 (en) | 2001-04-12 | 2003-04-29 | E20 Communications, Inc. | Semiconductor lasers |
US6567454B1 (en) * | 2001-05-01 | 2003-05-20 | Sandia Corporation | Coupled-resonator vertical-cavity lasers with two active gain regions |
EP1399994B1 (de) * | 2001-06-20 | 2005-07-27 | Infineon Technologies AG | Photonen-emitter und datenübertragungsvorrichtung |
US6717964B2 (en) | 2001-07-02 | 2004-04-06 | E20 Communications, Inc. | Method and apparatus for wavelength tuning of optically pumped vertical cavity surface emitting lasers |
US6714307B2 (en) | 2001-10-16 | 2004-03-30 | Zygo Corporation | Measurement of complex surface shapes using a spherical wavefront |
FR2833758B1 (fr) * | 2001-12-13 | 2004-12-10 | Commissariat Energie Atomique | Dispositif d'emission de lumiere a micro-cavite et procede de fabrication de ce dispositif |
DE10214120B4 (de) * | 2002-03-28 | 2007-06-06 | Osram Opto Semiconductors Gmbh | Optisch pumpbare oberflächenemittierende Halbleiterlaservorrichtung |
US6865208B1 (en) | 2002-06-10 | 2005-03-08 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Ultrafast laser beam switching and pulse train generation by using coupled vertical-cavity, surface-emitting lasers (VCSELS) |
US7209506B2 (en) * | 2003-07-31 | 2007-04-24 | Osram Opto Semiconductors Gmbh | Optically pumped semiconductor device and method for producing it |
DE10341085A1 (de) * | 2003-07-31 | 2005-03-03 | Osram Opto Semiconductors Gmbh | Optisch gepumpte Halbleitervorrichtung und Verfahren zu deren Herstellung |
US7282732B2 (en) * | 2003-10-24 | 2007-10-16 | Stc. Unm | Quantum dot structures |
TW200524236A (en) * | 2003-12-01 | 2005-07-16 | Nl Nanosemiconductor Gmbh | Optoelectronic device incorporating an interference filter |
WO2005122349A1 (en) * | 2004-06-07 | 2005-12-22 | Nl Nanosemiconductor Gmbh | Electrooptically wavelength-tunable resonant cavity optoelectronic device for high-speed data transfer |
US7593436B2 (en) * | 2006-06-16 | 2009-09-22 | Vi Systems Gmbh | Electrooptically Bragg-reflector stopband-tunable optoelectronic device for high-speed data transfer |
US7772615B2 (en) * | 2007-08-10 | 2010-08-10 | Connector Optics | Anti stark electrooptic medium and electrooptically modulated optoelectronic device based thereupon |
US7580595B1 (en) | 2008-05-09 | 2009-08-25 | Technische Universitaet Berlin | Data transmission optoelectric device |
GB2526140B (en) | 2014-05-15 | 2019-03-13 | Toshiba Res Europe Limited | Photon Source comprising a Control Signal and a Quantum Structure |
CN115079617B (zh) * | 2022-07-22 | 2022-11-22 | 中国科学院精密测量科学与技术创新研究院 | 一种微型Mz光泵原子传感器的伺服环路锁定装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2927908B2 (ja) * | 1990-08-14 | 1999-07-28 | キヤノン株式会社 | 発光素子 |
DE9012119U1 (de) | 1990-08-23 | 1991-12-19 | Muenz, Werner, 8056 Neufahrn, De | |
EP0549853B1 (de) * | 1991-12-16 | 1997-02-05 | International Business Machines Corporation | Abstimmbarer Laser mit gekoppelter Quantumwell-Struktur |
US5513204A (en) | 1995-04-12 | 1996-04-30 | Optical Concepts, Inc. | Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump |
US5914976A (en) | 1997-01-08 | 1999-06-22 | W. L. Gore & Associates, Inc. | VCSEL-based multi-wavelength transmitter and receiver modules for serial and parallel optical links |
-
1998
- 1998-07-09 CA CA002242670A patent/CA2242670A1/en not_active Abandoned
- 1998-07-13 US US09/114,142 patent/US6285704B1/en not_active Expired - Lifetime
- 1998-07-13 EP EP98305554A patent/EP0892474B1/de not_active Expired - Lifetime
- 1998-07-13 DE DE69808192T patent/DE69808192T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0892474B1 (de) | 2002-09-25 |
EP0892474A1 (de) | 1999-01-20 |
CA2242670A1 (en) | 1999-01-14 |
US6285704B1 (en) | 2001-09-04 |
DE69808192T2 (de) | 2003-04-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: ZARLINK SEMICONDUCTOR AB, JARFALLA, SE |
|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |