DE69811968T2 - Herstellungsverfahren für einen infrarotempfindlichen Strahlungsdetektor, insbesondere einen infrarotempfindlichen Bolometer - Google Patents
Herstellungsverfahren für einen infrarotempfindlichen Strahlungsdetektor, insbesondere einen infrarotempfindlichen BolometerInfo
- Publication number
- DE69811968T2 DE69811968T2 DE69811968T DE69811968T DE69811968T2 DE 69811968 T2 DE69811968 T2 DE 69811968T2 DE 69811968 T DE69811968 T DE 69811968T DE 69811968 T DE69811968 T DE 69811968T DE 69811968 T2 DE69811968 T2 DE 69811968T2
- Authority
- DE
- Germany
- Prior art keywords
- infrared
- sensitive
- manufacturing
- radiation detector
- bolometer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000005855 radiation Effects 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/0065—Mechanical properties
- B81C1/00666—Treatments for controlling internal stress or strain in MEMS structures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0161—Controlling physical properties of the material
- B81C2201/0163—Controlling internal stress of deposited layers
- B81C2201/017—Methods for controlling internal stress of deposited layers not provided for in B81C2201/0164 - B81C2201/0169
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP97870044A EP0867701A1 (de) | 1997-03-28 | 1997-03-28 | Herstellungsverfahren eines infrarotempfindlichen Strahlungsdetektors, insbesondere eines infrarotempfindlichen Bolometers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69811968D1 DE69811968D1 (de) | 2003-04-17 |
| DE69811968T2 true DE69811968T2 (de) | 2003-12-11 |
Family
ID=8230989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69811968T Expired - Lifetime DE69811968T2 (de) | 1997-03-28 | 1998-03-26 | Herstellungsverfahren für einen infrarotempfindlichen Strahlungsdetektor, insbesondere einen infrarotempfindlichen Bolometer |
Country Status (4)
| Country | Link |
|---|---|
| US (5) | US6194722B1 (de) |
| EP (3) | EP0867701A1 (de) |
| JP (2) | JPH1140824A (de) |
| DE (1) | DE69811968T2 (de) |
Families Citing this family (102)
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| US7176111B2 (en) | 1997-03-28 | 2007-02-13 | Interuniversitair Microelektronica Centrum (Imec) | Method for depositing polycrystalline SiGe suitable for micromachining and devices obtained thereof |
| WO2001074708A2 (en) * | 2000-04-05 | 2001-10-11 | Interuniversitair Microelektronica Centrum (Imec) | Method for depositing polycrystalline sige suitable for micromachining and devices obtained thereof |
| EP1136440A1 (de) * | 2000-03-24 | 2001-09-26 | Interuniversitair Micro-Elektronica Centrum Vzw | Verfahren zur Verbesserung der mechanischen Festigkeit von mikro-elektro-mechanischen Systemen und so hergestellte Anordnungen |
| US6107653A (en) * | 1997-06-24 | 2000-08-22 | Massachusetts Institute Of Technology | Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization |
| US7227176B2 (en) * | 1998-04-10 | 2007-06-05 | Massachusetts Institute Of Technology | Etch stop layer system |
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| JP4511739B2 (ja) * | 1999-01-15 | 2010-07-28 | ザ リージェンツ オブ ザ ユニヴァーシティ オブ カリフォルニア | マイクロ電子機械システムを形成するための多結晶シリコンゲルマニウム膜 |
| JP2001153720A (ja) * | 1999-11-30 | 2001-06-08 | Nec Corp | 熱型赤外線検出器 |
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-
1997
- 1997-03-28 EP EP97870044A patent/EP0867701A1/de not_active Withdrawn
-
1998
- 1998-03-26 EP EP02077978A patent/EP1263056A3/de not_active Withdrawn
- 1998-03-26 DE DE69811968T patent/DE69811968T2/de not_active Expired - Lifetime
- 1998-03-26 EP EP98870058A patent/EP0867702B1/de not_active Expired - Lifetime
- 1998-03-27 JP JP10122633A patent/JPH1140824A/ja active Pending
- 1998-03-27 US US09/049,797 patent/US6194722B1/en not_active Expired - Lifetime
-
2000
- 2000-10-31 US US09/702,501 patent/US6274462B1/en not_active Expired - Lifetime
-
2001
- 2001-05-18 US US09/861,334 patent/US6884636B2/en not_active Expired - Lifetime
-
2004
- 2004-08-17 US US10/921,012 patent/US7075081B2/en not_active Expired - Lifetime
-
2006
- 2006-05-05 US US11/418,973 patent/US7320896B2/en not_active Expired - Fee Related
-
2007
- 2007-02-08 JP JP2007029141A patent/JP2007165927A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1140824A (ja) | 1999-02-12 |
| US6274462B1 (en) | 2001-08-14 |
| EP0867702A3 (de) | 1998-10-21 |
| US7075081B2 (en) | 2006-07-11 |
| DE69811968D1 (de) | 2003-04-17 |
| US6194722B1 (en) | 2001-02-27 |
| EP0867701A1 (de) | 1998-09-30 |
| EP0867702B1 (de) | 2003-03-12 |
| JP2007165927A (ja) | 2007-06-28 |
| EP1263056A3 (de) | 2003-12-03 |
| US6884636B2 (en) | 2005-04-26 |
| EP0867702A2 (de) | 1998-09-30 |
| US20050012040A1 (en) | 2005-01-20 |
| EP1263056A2 (de) | 2002-12-04 |
| US20060289764A1 (en) | 2006-12-28 |
| US7320896B2 (en) | 2008-01-22 |
| US20010055833A1 (en) | 2001-12-27 |
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