DE69817251D1 - System und Verfahren zur Abscheidung von Schichten - Google Patents

System und Verfahren zur Abscheidung von Schichten

Info

Publication number
DE69817251D1
DE69817251D1 DE69817251T DE69817251T DE69817251D1 DE 69817251 D1 DE69817251 D1 DE 69817251D1 DE 69817251 T DE69817251 T DE 69817251T DE 69817251 T DE69817251 T DE 69817251T DE 69817251 D1 DE69817251 D1 DE 69817251D1
Authority
DE
Germany
Prior art keywords
depositing layers
depositing
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69817251T
Other languages
English (en)
Other versions
DE69817251T2 (de
Inventor
David Cheung
Wai-Fan Yau
Joe Feng
Judy H Huang
Madhu Deshpande
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69817251D1 publication Critical patent/DE69817251D1/de
Publication of DE69817251T2 publication Critical patent/DE69817251T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
DE69817251T 1997-05-07 1998-04-30 System und Verfahren zur Abscheidung von Schichten Expired - Fee Related DE69817251T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US852786 1997-05-07
US08/852,786 US6083852A (en) 1997-05-07 1997-05-07 Method for applying films using reduced deposition rates

Publications (2)

Publication Number Publication Date
DE69817251D1 true DE69817251D1 (de) 2003-09-25
DE69817251T2 DE69817251T2 (de) 2004-06-09

Family

ID=25314220

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69817251T Expired - Fee Related DE69817251T2 (de) 1997-05-07 1998-04-30 System und Verfahren zur Abscheidung von Schichten

Country Status (5)

Country Link
US (2) US6083852A (de)
EP (1) EP0877098B1 (de)
JP (1) JPH1167745A (de)
DE (1) DE69817251T2 (de)
TW (1) TW401461B (de)

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US7163879B2 (en) * 2002-05-30 2007-01-16 Sharp Kabushiki Kaisha Hard mask etch for gate polyetch
US6853043B2 (en) * 2002-11-04 2005-02-08 Applied Materials, Inc. Nitrogen-free antireflective coating for use with photolithographic patterning
US7972663B2 (en) * 2002-12-20 2011-07-05 Applied Materials, Inc. Method and apparatus for forming a high quality low temperature silicon nitride layer
US7365029B2 (en) * 2002-12-20 2008-04-29 Applied Materials, Inc. Method for silicon nitride chemical vapor deposition
US7172792B2 (en) * 2002-12-20 2007-02-06 Applied Materials, Inc. Method for forming a high quality low temperature silicon nitride film
EP1584100A2 (de) * 2002-12-20 2005-10-12 Applied Materials, Inc. Verfahren und vorrichtung zur herstellung eines hochqualitätsfilmes bei niedrigtemperatur
US20040121146A1 (en) * 2002-12-20 2004-06-24 Xiao-Ming He Composite barrier films and method
US7473566B1 (en) * 2004-02-03 2009-01-06 Advanced Micro Devices, Inc. Method and apparatus for controlling a film formation process with multiple objectives
US7288484B1 (en) 2004-07-13 2007-10-30 Novellus Systems, Inc. Photoresist strip method for low-k dielectrics
US7202176B1 (en) * 2004-12-13 2007-04-10 Novellus Systems, Inc. Enhanced stripping of low-k films using downstream gas mixing
US8193096B2 (en) 2004-12-13 2012-06-05 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
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US7740768B1 (en) 2006-10-12 2010-06-22 Novellus Systems, Inc. Simultaneous front side ash and backside clean
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US8591661B2 (en) 2009-12-11 2013-11-26 Novellus Systems, Inc. Low damage photoresist strip method for low-K dielectrics
KR101770008B1 (ko) 2009-12-11 2017-08-21 노벨러스 시스템즈, 인코포레이티드 고주입량 주입 박리 전에 실리콘을 보호하기 위한 개선된 패시베이션 공정
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US9514954B2 (en) 2014-06-10 2016-12-06 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films

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Also Published As

Publication number Publication date
DE69817251T2 (de) 2004-06-09
JPH1167745A (ja) 1999-03-09
EP0877098B1 (de) 2003-08-20
EP0877098A1 (de) 1998-11-11
TW401461B (en) 2000-08-11
US6083852A (en) 2000-07-04
US6324439B1 (en) 2001-11-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: BOECK, TAPPE, KIRSCHNER RECHTSANWAELTE PATENTANWAELTE

8328 Change in the person/name/address of the agent

Representative=s name: PUSCHMANN & BORCHERT, 82041 OBERHACHING

8339 Ceased/non-payment of the annual fee