DE69830463D1 - Oberflächenemittierender Laser mit vertikalem Resonator und getrennten optischen Leitern und Stromleitern - Google Patents

Oberflächenemittierender Laser mit vertikalem Resonator und getrennten optischen Leitern und Stromleitern

Info

Publication number
DE69830463D1
DE69830463D1 DE69830463T DE69830463T DE69830463D1 DE 69830463 D1 DE69830463 D1 DE 69830463D1 DE 69830463 T DE69830463 T DE 69830463T DE 69830463 T DE69830463 T DE 69830463T DE 69830463 D1 DE69830463 D1 DE 69830463D1
Authority
DE
Germany
Prior art keywords
conductors
emitting laser
surface emitting
cavity surface
vertical cavity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69830463T
Other languages
English (en)
Other versions
DE69830463T2 (de
Inventor
Leo Maria Chirovsky
Asaro Lucian Arthur D
William Scott Hobson
Sanghee Park Hui
Ronald Eugene Leibenguth
Betty Jyue Tseng
James Dennis Wynn
George John Zydzik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agere Systems LLC
Original Assignee
Agere Systems Optoelectronics Guardian Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agere Systems Optoelectronics Guardian Corp filed Critical Agere Systems Optoelectronics Guardian Corp
Publication of DE69830463D1 publication Critical patent/DE69830463D1/de
Application granted granted Critical
Publication of DE69830463T2 publication Critical patent/DE69830463T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
DE69830463T 1997-12-23 1998-12-11 Oberflächenemittierender Laser mit vertikalem Resonator und getrennten optischen Leitern und Stromleitern Expired - Lifetime DE69830463T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/997,710 US6169756B1 (en) 1997-12-23 1997-12-23 Vertical cavity surface-emitting laser with optical guide and current aperture
US997710 1997-12-23

Publications (2)

Publication Number Publication Date
DE69830463D1 true DE69830463D1 (de) 2005-07-14
DE69830463T2 DE69830463T2 (de) 2006-03-23

Family

ID=25544302

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69830463T Expired - Lifetime DE69830463T2 (de) 1997-12-23 1998-12-11 Oberflächenemittierender Laser mit vertikalem Resonator und getrennten optischen Leitern und Stromleitern

Country Status (4)

Country Link
US (1) US6169756B1 (de)
EP (1) EP0926786B1 (de)
JP (1) JP3497752B2 (de)
DE (1) DE69830463T2 (de)

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US6493368B1 (en) * 1999-07-21 2002-12-10 Agere Systems Inc. Lateral injection vertical cavity surface-emitting laser
DE10012869C2 (de) 2000-03-16 2002-05-29 Infineon Technologies Ag Vertikalresonator-Laserdiode mit koplanaren elektrischen Anschlußkontakten und Verfahren zu ihrer Herstellung
DE10038235A1 (de) * 2000-08-04 2002-02-21 Osram Opto Semiconductors Gmbh Oberflächenemittierender Laser mit seitlicher Strominjektion
US6589805B2 (en) * 2001-03-26 2003-07-08 Gazillion Bits, Inc. Current confinement structure for vertical cavity surface emitting laser
US6901099B1 (en) * 2001-06-29 2005-05-31 Optical Communication Products, Inc. Antiguide single mode vertical cavity laser
US6680963B2 (en) * 2001-07-24 2004-01-20 Lux Net Corporation Vertical-cavity surface emitting laser utilizing a reversed biased diode for improved current confinement
US6534331B2 (en) 2001-07-24 2003-03-18 Luxnet Corporation Method for making a vertical-cavity surface emitting laser with improved current confinement
US6553053B2 (en) 2001-07-25 2003-04-22 Luxnet Corporation Vertical cavity surface emitting laser having improved light output function
US6674948B2 (en) 2001-08-13 2004-01-06 Optoic Technology, Inc. Optoelectronic IC module
US6692979B2 (en) 2001-08-13 2004-02-17 Optoic Technology, Inc. Methods of fabricating optoelectronic IC modules
US7026178B2 (en) 2001-11-13 2006-04-11 Applied Optoelectronics, Inc. Method for fabricating a VCSEL with ion-implanted current-confinement structure
US6738409B2 (en) * 2001-12-28 2004-05-18 Honeywell International Inc. Current confinement, capacitance reduction and isolation of VCSELs using deep elemental traps
US6618414B1 (en) 2002-03-25 2003-09-09 Optical Communication Products, Inc. Hybrid vertical cavity laser with buried interface
US6795478B2 (en) 2002-03-28 2004-09-21 Applied Optoelectronics, Inc. VCSEL with antiguide current confinement layer
JP3846367B2 (ja) * 2002-05-30 2006-11-15 セイコーエプソン株式会社 半導体素子部材及び半導体装置並びにそれらの製造方法、電気光学装置、電子機器
JP3812500B2 (ja) * 2002-06-20 2006-08-23 セイコーエプソン株式会社 半導体装置とその製造方法、電気光学装置、電子機器
AU2003256382A1 (en) * 2002-07-06 2004-01-23 Optical Communication Products, Inc. Method of self-aligning an oxide aperture with an annular intra-cavity contact in a long wavelength vcsel
TW567292B (en) 2002-07-31 2003-12-21 Benq Corp Lamp module and back light device having the same
US7092421B2 (en) * 2003-08-30 2006-08-15 Lucent Technologies Inc. Unipolar, intraband optoelectronic transducers with micro-cavity resonators
WO2005029655A2 (en) * 2003-09-18 2005-03-31 Nanosource Inc. Epitaxial mode-confined vertical cavity surface emitting laser (vcsel) and method of manufacturing same
JP4058635B2 (ja) * 2003-09-18 2008-03-12 セイコーエプソン株式会社 面発光型半導体レーザおよびその製造方法
US6906353B1 (en) 2003-11-17 2005-06-14 Jds Uniphase Corporation High speed implanted VCSEL
CN1305191C (zh) * 2004-04-06 2007-03-14 北京工业大学 三轴自对准法制备内腔接触式垂直腔面发射激光器
WO2006024025A2 (en) * 2004-08-25 2006-03-02 Nanosource, Inc. Optical-mode-confined and electrical-current-confined semiconductor light sources utilizing resistive interfacial layers
US7826506B2 (en) * 2004-10-01 2010-11-02 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
WO2006039341A2 (en) * 2004-10-01 2006-04-13 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
US7860137B2 (en) * 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
US8815617B2 (en) * 2004-10-01 2014-08-26 Finisar Corporation Passivation of VCSEL sidewalls
FR2880684B1 (fr) * 2005-01-07 2007-09-21 Centre Nat Rech Scient Filtre optoelectronique selectif accordable en longueur d'onde.
US20060227823A1 (en) * 2005-03-30 2006-10-12 Edris Mohammed Electroabsorption vertical cavity surface emitting laser modulator and/or detector
JP5100434B2 (ja) * 2008-02-20 2012-12-19 古河電気工業株式会社 面発光半導体レーザ及び面発光半導体レーザアレイ
WO2009119171A1 (ja) * 2008-03-28 2009-10-01 日本電気株式会社 面発光レーザ
WO2009119172A1 (ja) * 2008-03-28 2009-10-01 日本電気株式会社 面発光レーザ
US8204093B2 (en) * 2009-09-16 2012-06-19 The Furukawa Electric Co., Ltd. Method of manufacturing vertical-cavity surface emitting laser and vertical-cavity surface emitting laser array
JP2011216557A (ja) * 2010-03-31 2011-10-27 Furukawa Electric Co Ltd:The 面発光レーザ、面発光レーザアレイ、光源、および光モジュール
TWI405379B (zh) * 2010-09-14 2013-08-11 True Light Corp 垂直共振腔面射型雷射及其製作方法
KR20130085763A (ko) * 2012-01-20 2013-07-30 삼성전자주식회사 광 집적 회로용 혼성 레이저 광원
JP6102525B2 (ja) * 2012-07-23 2017-03-29 株式会社リコー 面発光レーザ素子及び原子発振器
JP6107089B2 (ja) * 2012-11-30 2017-04-05 株式会社リコー 面発光レーザ素子及び原子発振器
CN108141005B (zh) 2015-07-30 2021-08-10 奥普蒂脉冲公司 刚性高功率和高速激光网格结构
US10374705B2 (en) 2017-09-06 2019-08-06 Optipulse Inc. Method and apparatus for alignment of a line-of-sight communications link
EP3490084A1 (de) 2017-11-23 2019-05-29 Koninklijke Philips N.V. Oberflächenemittierender laser mit vertikalem resonator
CN112189288A (zh) * 2018-05-11 2021-01-05 加利福尼亚大学董事会 具有埋入式折射率引导型电流限制层的垂直腔面发射器件
US20230006421A1 (en) * 2019-12-20 2023-01-05 Sony Group Corporation Vertical cavity surface emitting laser element, vertical cavity surface emitting laser element array, vertical cavity surface emitting laser module, and method of producing vertical cavity surface emitting laser element
CN113311410B (zh) * 2021-07-14 2021-11-30 浙江航天润博测控技术有限公司 一种直升机避障激光雷达发射模块

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USH137H (en) * 1985-04-11 1986-10-07 The United States Of America As Represented By The United States Department Of Energy Process for reducing beta activity in uranium
US4819039A (en) 1986-12-22 1989-04-04 American Telephone And Telegraph Co. At&T Laboratories Devices and device fabrication with borosilicate glass
US4949350A (en) * 1989-07-17 1990-08-14 Bell Communications Research, Inc. Surface emitting semiconductor laser
US5206871A (en) * 1991-12-27 1993-04-27 At&T Bell Laboratories Optical devices with electron-beam evaporated multilayer mirror
JPH0697570A (ja) * 1992-09-14 1994-04-08 Matsushita Electric Ind Co Ltd 半導体レーザー素子端面の反射鏡およびその製造方法
US5446752A (en) * 1993-09-21 1995-08-29 Motorola VCSEL with current blocking layer offset
US5633527A (en) * 1995-02-06 1997-05-27 Sandia Corporation Unitary lens semiconductor device
KR970031126A (ko) * 1995-11-13 1997-06-26 빈센트 비. 인그라시아 저 저항 피-다운 톱 방사 리지 수직. 캐버티면 방사 레이저 및 그의 제조방법(Low resistance p-down top emitting ridge VCSEL and method of fabrication)
US5754578A (en) * 1996-06-24 1998-05-19 W. L. Gore & Associates, Inc. 1250-1650 nm vertical cavity surface emitting laser pumped by a 700-1050 nm vertical cavity surface emitting laser
US5991326A (en) * 1998-04-14 1999-11-23 Bandwidth9, Inc. Lattice-relaxed verticle optical cavities

Also Published As

Publication number Publication date
EP0926786A2 (de) 1999-06-30
EP0926786A3 (de) 2000-04-26
DE69830463T2 (de) 2006-03-23
EP0926786B1 (de) 2005-06-08
JP3497752B2 (ja) 2004-02-16
US6169756B1 (en) 2001-01-02
JPH11243257A (ja) 1999-09-07

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