DE69833140D1 - Abscheidung einer Diffusionsbarriereschicht - Google Patents

Abscheidung einer Diffusionsbarriereschicht

Info

Publication number
DE69833140D1
DE69833140D1 DE69833140T DE69833140T DE69833140D1 DE 69833140 D1 DE69833140 D1 DE 69833140D1 DE 69833140 T DE69833140 T DE 69833140T DE 69833140 T DE69833140 T DE 69833140T DE 69833140 D1 DE69833140 D1 DE 69833140D1
Authority
DE
Germany
Prior art keywords
deposition
barrier layer
diffusion barrier
diffusion
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69833140T
Other languages
English (en)
Other versions
DE69833140T2 (de
Inventor
Ajay Jain
Elizabeth Weitzman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of DE69833140D1 publication Critical patent/DE69833140D1/de
Application granted granted Critical
Publication of DE69833140T2 publication Critical patent/DE69833140T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
DE69833140T 1997-03-31 1998-03-18 Abscheidung einer Diffusionsbarriereschicht Expired - Lifetime DE69833140T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/829,752 US6153519A (en) 1997-03-31 1997-03-31 Method of forming a barrier layer
US829752 1997-03-31

Publications (2)

Publication Number Publication Date
DE69833140D1 true DE69833140D1 (de) 2006-04-06
DE69833140T2 DE69833140T2 (de) 2006-07-06

Family

ID=25255452

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69833140T Expired - Lifetime DE69833140T2 (de) 1997-03-31 1998-03-18 Abscheidung einer Diffusionsbarriereschicht

Country Status (8)

Country Link
US (2) US6153519A (de)
EP (1) EP0869544B1 (de)
JP (1) JP4180145B2 (de)
KR (1) KR100546943B1 (de)
CN (1) CN1204607C (de)
DE (1) DE69833140T2 (de)
SG (1) SG63831A1 (de)
TW (1) TW359009B (de)

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Also Published As

Publication number Publication date
CN1204607C (zh) 2005-06-01
US6376371B1 (en) 2002-04-23
KR100546943B1 (ko) 2006-04-12
JP4180145B2 (ja) 2008-11-12
JPH10284440A (ja) 1998-10-23
SG63831A1 (en) 1999-03-30
EP0869544B1 (de) 2006-01-11
US6153519A (en) 2000-11-28
KR19980080896A (ko) 1998-11-25
CN1195188A (zh) 1998-10-07
TW359009B (en) 1999-05-21
EP0869544A2 (de) 1998-10-07
DE69833140T2 (de) 2006-07-06
EP0869544A3 (de) 2000-02-02

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