DE69834232D1 - Verfahren zum Verbinden von kristallinen Substraten mit unterschiedlichen Kristallgitter - Google Patents
Verfahren zum Verbinden von kristallinen Substraten mit unterschiedlichen KristallgitterInfo
- Publication number
- DE69834232D1 DE69834232D1 DE69834232T DE69834232T DE69834232D1 DE 69834232 D1 DE69834232 D1 DE 69834232D1 DE 69834232 T DE69834232 T DE 69834232T DE 69834232 T DE69834232 T DE 69834232T DE 69834232 D1 DE69834232 D1 DE 69834232D1
- Authority
- DE
- Germany
- Prior art keywords
- joining
- different crystal
- crystal lattices
- crystalline substrates
- crystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/947,175 US5966622A (en) | 1997-10-08 | 1997-10-08 | Process for bonding crystalline substrates with different crystal lattices |
US947175 | 1997-10-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69834232D1 true DE69834232D1 (de) | 2006-05-24 |
DE69834232T2 DE69834232T2 (de) | 2007-03-08 |
Family
ID=25485666
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69834232T Expired - Lifetime DE69834232T2 (de) | 1997-10-08 | 1998-09-29 | Verfahren zum Verbinden von kristallinen Substraten mit unterschiedlichen Kristallgitter |
Country Status (6)
Country | Link |
---|---|
US (1) | US5966622A (de) |
EP (1) | EP0908933B1 (de) |
JP (1) | JPH11214732A (de) |
KR (1) | KR100390670B1 (de) |
DE (1) | DE69834232T2 (de) |
TW (1) | TW390040B (de) |
Families Citing this family (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100400808B1 (ko) | 1997-06-24 | 2003-10-08 | 매사츄세츠 인스티튜트 오브 테크놀러지 | 그레이드된 GeSi층 및 평탄화를 사용한 Si상의 Ge의 쓰레딩 전위 밀도 제어 |
US6071795A (en) * | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
US7227176B2 (en) | 1998-04-10 | 2007-06-05 | Massachusetts Institute Of Technology | Etch stop layer system |
US6228673B1 (en) * | 1999-05-13 | 2001-05-08 | Hughes Electronics Corporation | Method of fabricating a surface coupled InGaAs photodetector |
DE60042187D1 (de) | 1999-06-09 | 2009-06-25 | Toshiba Kawasaki Kk | Bond-typ Halbleitersubstrat, lichtemittierendes Halbleiterbauelement und Herstellungsverfahren |
AU5522300A (en) * | 1999-06-28 | 2001-01-31 | Mikroelektronik Centret (Mic) | Nanometer-scale modulation |
US6455398B1 (en) * | 1999-07-16 | 2002-09-24 | Massachusetts Institute Of Technology | Silicon on III-V semiconductor bonding for monolithic optoelectronic integration |
FR2798224B1 (fr) * | 1999-09-08 | 2003-08-29 | Commissariat Energie Atomique | Realisation d'un collage electriquement conducteur entre deux elements semi-conducteurs. |
US6984571B1 (en) | 1999-10-01 | 2006-01-10 | Ziptronix, Inc. | Three dimensional device integration method and integrated device |
US6500694B1 (en) * | 2000-03-22 | 2002-12-31 | Ziptronix, Inc. | Three dimensional device integration method and integrated device |
WO2001054175A1 (en) | 2000-01-20 | 2001-07-26 | Amberwave Systems Corporation | Low threading dislocation density relaxed mismatched epilayers without high temperature growth |
US6602613B1 (en) | 2000-01-20 | 2003-08-05 | Amberwave Systems Corporation | Heterointegration of materials using deposition and bonding |
US6750130B1 (en) | 2000-01-20 | 2004-06-15 | Amberwave Systems Corporation | Heterointegration of materials using deposition and bonding |
US6902987B1 (en) * | 2000-02-16 | 2005-06-07 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
JP5066321B2 (ja) | 2000-08-04 | 2012-11-07 | 台湾積體電路製造股▲ふん▼有限公司 | モノリシックoeic用埋め込み光電子材料を備えたシリコンウエハ |
JP2004507084A (ja) | 2000-08-16 | 2004-03-04 | マサチューセッツ インスティテュート オブ テクノロジー | グレーデッドエピタキシャル成長を用いた半導体品の製造プロセス |
US6649480B2 (en) | 2000-12-04 | 2003-11-18 | Amberwave Systems Corporation | Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs |
US20020100942A1 (en) * | 2000-12-04 | 2002-08-01 | Fitzgerald Eugene A. | CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs |
US6723661B2 (en) | 2001-03-02 | 2004-04-20 | Amberwave Systems Corporation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
US6830976B2 (en) | 2001-03-02 | 2004-12-14 | Amberwave Systems Corproation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
US6724008B2 (en) | 2001-03-02 | 2004-04-20 | Amberwave Systems Corporation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
US6703688B1 (en) | 2001-03-02 | 2004-03-09 | Amberwave Systems Corporation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
WO2002082514A1 (en) | 2001-04-04 | 2002-10-17 | Massachusetts Institute Of Technology | A method for semiconductor device fabrication |
US6897138B2 (en) * | 2001-06-25 | 2005-05-24 | Toyoda Gosei Co., Ltd. | Method and apparatus for producing group III nitride compound semiconductor |
WO2003025984A2 (en) | 2001-09-21 | 2003-03-27 | Amberwave Systems Corporation | Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same |
AU2002341803A1 (en) | 2001-09-24 | 2003-04-07 | Amberwave Systems Corporation | Rf circuits including transistors having strained material layers |
JP2006512748A (ja) * | 2001-12-21 | 2006-04-13 | アイクストロン、アーゲー | Iii−v半導体皮膜を非iii−v基板に沈積する方法 |
US7060632B2 (en) | 2002-03-14 | 2006-06-13 | Amberwave Systems Corporation | Methods for fabricating strained layers on semiconductor substrates |
US7335545B2 (en) | 2002-06-07 | 2008-02-26 | Amberwave Systems Corporation | Control of strain in device layers by prevention of relaxation |
US20030227057A1 (en) | 2002-06-07 | 2003-12-11 | Lochtefeld Anthony J. | Strained-semiconductor-on-insulator device structures |
US6995430B2 (en) | 2002-06-07 | 2006-02-07 | Amberwave Systems Corporation | Strained-semiconductor-on-insulator device structures |
US7615829B2 (en) | 2002-06-07 | 2009-11-10 | Amberwave Systems Corporation | Elevated source and drain elements for strained-channel heterojuntion field-effect transistors |
US7074623B2 (en) | 2002-06-07 | 2006-07-11 | Amberwave Systems Corporation | Methods of forming strained-semiconductor-on-insulator finFET device structures |
US7307273B2 (en) | 2002-06-07 | 2007-12-11 | Amberwave Systems Corporation | Control of strain in device layers by selective relaxation |
US6946371B2 (en) | 2002-06-10 | 2005-09-20 | Amberwave Systems Corporation | Methods of fabricating semiconductor structures having epitaxially grown source and drain elements |
US6982474B2 (en) | 2002-06-25 | 2006-01-03 | Amberwave Systems Corporation | Reacted conductive gate electrodes |
EP1530800B1 (de) | 2002-08-23 | 2016-12-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Halbleiter-heterostrukturen mit reduzierter anhäufung von versetzungen und entsprechende herstellungsverfahren |
US7594967B2 (en) | 2002-08-30 | 2009-09-29 | Amberwave Systems Corporation | Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy |
EP2337062A3 (de) | 2003-01-27 | 2016-05-04 | Taiwan Semiconductor Manufacturing Company, Limited | Herstellungsverfahren von HALBLEITERSTRUKTUREN MIT STRUKTURHOMOGENITÄT |
US7109092B2 (en) | 2003-05-19 | 2006-09-19 | Ziptronix, Inc. | Method of room temperature covalent bonding |
US7202141B2 (en) * | 2004-03-29 | 2007-04-10 | J.P. Sercel Associates, Inc. | Method of separating layers of material |
US7393733B2 (en) | 2004-12-01 | 2008-07-01 | Amberwave Systems Corporation | Methods of forming hybrid fin field-effect transistor structures |
US20060113603A1 (en) * | 2004-12-01 | 2006-06-01 | Amberwave Systems Corporation | Hybrid semiconductor-on-insulator structures and related methods |
US7895548B2 (en) * | 2007-10-26 | 2011-02-22 | Synopsys, Inc. | Filler cells for design optimization in a place-and-route system |
US20090108408A1 (en) * | 2007-10-29 | 2009-04-30 | Synopsys, Inc. | Method for Trapping Implant Damage in a Semiconductor Substrate |
US9472423B2 (en) * | 2007-10-30 | 2016-10-18 | Synopsys, Inc. | Method for suppressing lattice defects in a semiconductor substrate |
KR101199301B1 (ko) | 2008-12-05 | 2012-11-09 | 한국전자통신연구원 | 확산 영역을 포함하는 화합물 반도체 소자의 형성 방법 |
CN102136672B (zh) * | 2011-03-15 | 2012-12-26 | 上海交通大学 | 基于碳化硅包层板条的激光器冷却装置 |
WO2015157202A1 (en) | 2014-04-09 | 2015-10-15 | Corning Incorporated | Device modified substrate article and methods for making |
US10543662B2 (en) | 2012-02-08 | 2020-01-28 | Corning Incorporated | Device modified substrate article and methods for making |
CN102769074B (zh) * | 2012-08-08 | 2014-11-05 | 天津蓝天太阳科技有限公司 | 基于竖直微气孔的Si与GaInAs低温键合方法 |
TWI617437B (zh) | 2012-12-13 | 2018-03-11 | 康寧公司 | 促進控制薄片與載體間接合之處理 |
US10014177B2 (en) | 2012-12-13 | 2018-07-03 | Corning Incorporated | Methods for processing electronic devices |
US10086584B2 (en) | 2012-12-13 | 2018-10-02 | Corning Incorporated | Glass articles and methods for controlled bonding of glass sheets with carriers |
US9340443B2 (en) | 2012-12-13 | 2016-05-17 | Corning Incorporated | Bulk annealing of glass sheets |
US10510576B2 (en) | 2013-10-14 | 2019-12-17 | Corning Incorporated | Carrier-bonding methods and articles for semiconductor and interposer processing |
KR102353030B1 (ko) | 2014-01-27 | 2022-01-19 | 코닝 인코포레이티드 | 얇은 시트와 캐리어의 제어된 결합을 위한 물품 및 방법 |
CN107635769B (zh) | 2015-05-19 | 2020-09-15 | 康宁股份有限公司 | 使片材与载体粘结的制品和方法 |
EP3313799B1 (de) | 2015-06-26 | 2022-09-07 | Corning Incorporated | Verfahren und artikel mit einem bogen und einem träger |
FR3043406B1 (fr) * | 2015-11-09 | 2019-06-21 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede d'assemblage de substrats par collage de surfaces de phosphure d'indium |
TW201825623A (zh) | 2016-08-30 | 2018-07-16 | 美商康寧公司 | 用於片材接合的矽氧烷電漿聚合物 |
TWI821867B (zh) | 2016-08-31 | 2023-11-11 | 美商康寧公司 | 具以可控制式黏結的薄片之製品及製作其之方法 |
US11331692B2 (en) | 2017-12-15 | 2022-05-17 | Corning Incorporated | Methods for treating a substrate and method for making articles comprising bonded sheets |
US20220238747A1 (en) * | 2021-01-28 | 2022-07-28 | Solaero Technologies Corp. | Inverted metamorphic multijunction solar cell |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4891329A (en) * | 1988-11-29 | 1990-01-02 | University Of North Carolina | Method of forming a nonsilicon semiconductor on insulator structure |
JPH05275332A (ja) * | 1992-03-26 | 1993-10-22 | Shimadzu Corp | ヘテロエピタキシャル膜の製膜方法 |
US5346848A (en) * | 1993-06-01 | 1994-09-13 | Motorola, Inc. | Method of bonding silicon and III-V semiconductor materials |
US5391257A (en) * | 1993-12-10 | 1995-02-21 | Rockwell International Corporation | Method of transferring a thin film to an alternate substrate |
JP2669368B2 (ja) * | 1994-03-16 | 1997-10-27 | 日本電気株式会社 | Si基板上化合物半導体積層構造の製造方法 |
-
1997
- 1997-10-08 US US08/947,175 patent/US5966622A/en not_active Expired - Lifetime
-
1998
- 1998-09-08 TW TW087114881A patent/TW390040B/zh not_active IP Right Cessation
- 1998-09-29 DE DE69834232T patent/DE69834232T2/de not_active Expired - Lifetime
- 1998-09-29 EP EP98307910A patent/EP0908933B1/de not_active Expired - Lifetime
- 1998-10-08 JP JP10285802A patent/JPH11214732A/ja active Pending
- 1998-10-08 KR KR10-1998-0042015A patent/KR100390670B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE69834232T2 (de) | 2007-03-08 |
EP0908933A1 (de) | 1999-04-14 |
US5966622A (en) | 1999-10-12 |
JPH11214732A (ja) | 1999-08-06 |
KR19990036941A (ko) | 1999-05-25 |
KR100390670B1 (ko) | 2003-08-19 |
TW390040B (en) | 2000-05-11 |
EP0908933B1 (de) | 2006-04-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |