DE69834232D1 - Verfahren zum Verbinden von kristallinen Substraten mit unterschiedlichen Kristallgitter - Google Patents
Verfahren zum Verbinden von kristallinen Substraten mit unterschiedlichen KristallgitterInfo
- Publication number
- DE69834232D1 DE69834232D1 DE69834232T DE69834232T DE69834232D1 DE 69834232 D1 DE69834232 D1 DE 69834232D1 DE 69834232 T DE69834232 T DE 69834232T DE 69834232 T DE69834232 T DE 69834232T DE 69834232 D1 DE69834232 D1 DE 69834232D1
- Authority
- DE
- Germany
- Prior art keywords
- joining
- different crystal
- crystal lattices
- crystalline substrates
- crystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US947175 | 1997-10-08 | ||
US08/947,175 US5966622A (en) | 1997-10-08 | 1997-10-08 | Process for bonding crystalline substrates with different crystal lattices |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69834232D1 true DE69834232D1 (de) | 2006-05-24 |
DE69834232T2 DE69834232T2 (de) | 2007-03-08 |
Family
ID=25485666
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69834232T Expired - Lifetime DE69834232T2 (de) | 1997-10-08 | 1998-09-29 | Verfahren zum Verbinden von kristallinen Substraten mit unterschiedlichen Kristallgitter |
Country Status (6)
Country | Link |
---|---|
US (1) | US5966622A (de) |
EP (1) | EP0908933B1 (de) |
JP (1) | JPH11214732A (de) |
KR (1) | KR100390670B1 (de) |
DE (1) | DE69834232T2 (de) |
TW (1) | TW390040B (de) |
Families Citing this family (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3535527B2 (ja) | 1997-06-24 | 2004-06-07 | マサチューセッツ インスティテュート オブ テクノロジー | 傾斜GeSi層と平坦化を用いたゲルマニウム・オン・シリコンの貫通転位の制御 |
US6071795A (en) * | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
US7227176B2 (en) | 1998-04-10 | 2007-06-05 | Massachusetts Institute Of Technology | Etch stop layer system |
US6228673B1 (en) * | 1999-05-13 | 2001-05-08 | Hughes Electronics Corporation | Method of fabricating a surface coupled InGaAs photodetector |
EP1065734B1 (de) * | 1999-06-09 | 2009-05-13 | Kabushiki Kaisha Toshiba | Bond-typ Halbleitersubstrat, lichtemittierendes Halbleiterbauelement und Herstellungsverfahren |
EP1196350A2 (de) * | 1999-06-28 | 2002-04-17 | Mikroelektronik Centret (MIC) | Modulation im nanometerbereich |
WO2001006546A2 (en) * | 1999-07-16 | 2001-01-25 | Massachusetts Institute Of Technology | Silicon on iii-v semiconductor bonding for monolithic optoelectronic integration |
FR2798224B1 (fr) * | 1999-09-08 | 2003-08-29 | Commissariat Energie Atomique | Realisation d'un collage electriquement conducteur entre deux elements semi-conducteurs. |
US6984571B1 (en) | 1999-10-01 | 2006-01-10 | Ziptronix, Inc. | Three dimensional device integration method and integrated device |
US6500694B1 (en) | 2000-03-22 | 2002-12-31 | Ziptronix, Inc. | Three dimensional device integration method and integrated device |
US6602613B1 (en) | 2000-01-20 | 2003-08-05 | Amberwave Systems Corporation | Heterointegration of materials using deposition and bonding |
US6503773B2 (en) | 2000-01-20 | 2003-01-07 | Amberwave Systems Corporation | Low threading dislocation density relaxed mismatched epilayers without high temperature growth |
US6750130B1 (en) | 2000-01-20 | 2004-06-15 | Amberwave Systems Corporation | Heterointegration of materials using deposition and bonding |
US6902987B1 (en) | 2000-02-16 | 2005-06-07 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
WO2002013342A2 (en) | 2000-08-04 | 2002-02-14 | Amberwave Systems Corporation | Silicon wafer with embedded optoelectronic material for monolithic oeic |
US6573126B2 (en) | 2000-08-16 | 2003-06-03 | Massachusetts Institute Of Technology | Process for producing semiconductor article using graded epitaxial growth |
US20020100942A1 (en) * | 2000-12-04 | 2002-08-01 | Fitzgerald Eugene A. | CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs |
US6649480B2 (en) | 2000-12-04 | 2003-11-18 | Amberwave Systems Corporation | Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs |
US6724008B2 (en) | 2001-03-02 | 2004-04-20 | Amberwave Systems Corporation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
US6830976B2 (en) | 2001-03-02 | 2004-12-14 | Amberwave Systems Corproation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
US6723661B2 (en) | 2001-03-02 | 2004-04-20 | Amberwave Systems Corporation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
US6703688B1 (en) | 2001-03-02 | 2004-03-09 | Amberwave Systems Corporation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
WO2002082514A1 (en) | 2001-04-04 | 2002-10-17 | Massachusetts Institute Of Technology | A method for semiconductor device fabrication |
US6897138B2 (en) * | 2001-06-25 | 2005-05-24 | Toyoda Gosei Co., Ltd. | Method and apparatus for producing group III nitride compound semiconductor |
JP2005504436A (ja) | 2001-09-21 | 2005-02-10 | アンバーウェーブ システムズ コーポレイション | 画定された不純物勾配を有するひずみ材料層を使用する半導体構造、およびその構造を製作するための方法。 |
US6933518B2 (en) | 2001-09-24 | 2005-08-23 | Amberwave Systems Corporation | RF circuits including transistors having strained material layers |
EP1459362A2 (de) * | 2001-12-21 | 2004-09-22 | Aixtron AG | Verfahren zum abscheiden von iii-v-halbleiterschichten auf einem nicht-iii-v-substrat |
WO2003079415A2 (en) | 2002-03-14 | 2003-09-25 | Amberwave Systems Corporation | Methods for fabricating strained layers on semiconductor substrates |
US7615829B2 (en) | 2002-06-07 | 2009-11-10 | Amberwave Systems Corporation | Elevated source and drain elements for strained-channel heterojuntion field-effect transistors |
US7074623B2 (en) | 2002-06-07 | 2006-07-11 | Amberwave Systems Corporation | Methods of forming strained-semiconductor-on-insulator finFET device structures |
US20030227057A1 (en) | 2002-06-07 | 2003-12-11 | Lochtefeld Anthony J. | Strained-semiconductor-on-insulator device structures |
US7307273B2 (en) | 2002-06-07 | 2007-12-11 | Amberwave Systems Corporation | Control of strain in device layers by selective relaxation |
US7335545B2 (en) | 2002-06-07 | 2008-02-26 | Amberwave Systems Corporation | Control of strain in device layers by prevention of relaxation |
US6995430B2 (en) | 2002-06-07 | 2006-02-07 | Amberwave Systems Corporation | Strained-semiconductor-on-insulator device structures |
AU2003247513A1 (en) | 2002-06-10 | 2003-12-22 | Amberwave Systems Corporation | Growing source and drain elements by selecive epitaxy |
US6982474B2 (en) | 2002-06-25 | 2006-01-03 | Amberwave Systems Corporation | Reacted conductive gate electrodes |
AU2003274922A1 (en) | 2002-08-23 | 2004-03-11 | Amberwave Systems Corporation | Semiconductor heterostructures having reduced dislocation pile-ups and related methods |
US7594967B2 (en) | 2002-08-30 | 2009-09-29 | Amberwave Systems Corporation | Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy |
EP2337062A3 (de) | 2003-01-27 | 2016-05-04 | Taiwan Semiconductor Manufacturing Company, Limited | Herstellungsverfahren von HALBLEITERSTRUKTUREN MIT STRUKTURHOMOGENITÄT |
US7109092B2 (en) | 2003-05-19 | 2006-09-19 | Ziptronix, Inc. | Method of room temperature covalent bonding |
US7202141B2 (en) * | 2004-03-29 | 2007-04-10 | J.P. Sercel Associates, Inc. | Method of separating layers of material |
US7393733B2 (en) | 2004-12-01 | 2008-07-01 | Amberwave Systems Corporation | Methods of forming hybrid fin field-effect transistor structures |
US20060113603A1 (en) * | 2004-12-01 | 2006-06-01 | Amberwave Systems Corporation | Hybrid semiconductor-on-insulator structures and related methods |
US7895548B2 (en) * | 2007-10-26 | 2011-02-22 | Synopsys, Inc. | Filler cells for design optimization in a place-and-route system |
US20090108408A1 (en) * | 2007-10-29 | 2009-04-30 | Synopsys, Inc. | Method for Trapping Implant Damage in a Semiconductor Substrate |
US9472423B2 (en) * | 2007-10-30 | 2016-10-18 | Synopsys, Inc. | Method for suppressing lattice defects in a semiconductor substrate |
KR101199301B1 (ko) | 2008-12-05 | 2012-11-09 | 한국전자통신연구원 | 확산 영역을 포함하는 화합물 반도체 소자의 형성 방법 |
CN102136672B (zh) * | 2011-03-15 | 2012-12-26 | 上海交通大学 | 基于碳化硅包层板条的激光器冷却装置 |
US10543662B2 (en) | 2012-02-08 | 2020-01-28 | Corning Incorporated | Device modified substrate article and methods for making |
CN102769074B (zh) * | 2012-08-08 | 2014-11-05 | 天津蓝天太阳科技有限公司 | 基于竖直微气孔的Si与GaInAs低温键合方法 |
US10086584B2 (en) | 2012-12-13 | 2018-10-02 | Corning Incorporated | Glass articles and methods for controlled bonding of glass sheets with carriers |
US9340443B2 (en) | 2012-12-13 | 2016-05-17 | Corning Incorporated | Bulk annealing of glass sheets |
TWI617437B (zh) | 2012-12-13 | 2018-03-11 | 康寧公司 | 促進控制薄片與載體間接合之處理 |
US10014177B2 (en) | 2012-12-13 | 2018-07-03 | Corning Incorporated | Methods for processing electronic devices |
US10510576B2 (en) | 2013-10-14 | 2019-12-17 | Corning Incorporated | Carrier-bonding methods and articles for semiconductor and interposer processing |
WO2015112958A1 (en) | 2014-01-27 | 2015-07-30 | Corning Incorporated | Articles and methods for controlled bonding of thin sheets with carriers |
SG11201608442TA (en) | 2014-04-09 | 2016-11-29 | Corning Inc | Device modified substrate article and methods for making |
JP2018524201A (ja) | 2015-05-19 | 2018-08-30 | コーニング インコーポレイテッド | シートをキャリアと結合するための物品および方法 |
CN107810168A (zh) | 2015-06-26 | 2018-03-16 | 康宁股份有限公司 | 包含板材和载体的方法和制品 |
FR3043406B1 (fr) * | 2015-11-09 | 2019-06-21 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede d'assemblage de substrats par collage de surfaces de phosphure d'indium |
TW202216444A (zh) | 2016-08-30 | 2022-05-01 | 美商康寧公司 | 用於片材接合的矽氧烷電漿聚合物 |
TWI810161B (zh) | 2016-08-31 | 2023-08-01 | 美商康寧公司 | 具以可控制式黏結的薄片之製品及製作其之方法 |
WO2019118660A1 (en) | 2017-12-15 | 2019-06-20 | Corning Incorporated | Method for treating a substrate and method for making articles comprising bonded sheets |
US20220238747A1 (en) * | 2021-01-28 | 2022-07-28 | Solaero Technologies Corp. | Inverted metamorphic multijunction solar cell |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4891329A (en) * | 1988-11-29 | 1990-01-02 | University Of North Carolina | Method of forming a nonsilicon semiconductor on insulator structure |
JPH05275332A (ja) * | 1992-03-26 | 1993-10-22 | Shimadzu Corp | ヘテロエピタキシャル膜の製膜方法 |
US5346848A (en) * | 1993-06-01 | 1994-09-13 | Motorola, Inc. | Method of bonding silicon and III-V semiconductor materials |
US5391257A (en) * | 1993-12-10 | 1995-02-21 | Rockwell International Corporation | Method of transferring a thin film to an alternate substrate |
JP2669368B2 (ja) * | 1994-03-16 | 1997-10-27 | 日本電気株式会社 | Si基板上化合物半導体積層構造の製造方法 |
-
1997
- 1997-10-08 US US08/947,175 patent/US5966622A/en not_active Expired - Lifetime
-
1998
- 1998-09-08 TW TW087114881A patent/TW390040B/zh not_active IP Right Cessation
- 1998-09-29 DE DE69834232T patent/DE69834232T2/de not_active Expired - Lifetime
- 1998-09-29 EP EP98307910A patent/EP0908933B1/de not_active Expired - Lifetime
- 1998-10-08 KR KR10-1998-0042015A patent/KR100390670B1/ko not_active IP Right Cessation
- 1998-10-08 JP JP10285802A patent/JPH11214732A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0908933B1 (de) | 2006-04-19 |
JPH11214732A (ja) | 1999-08-06 |
DE69834232T2 (de) | 2007-03-08 |
KR19990036941A (ko) | 1999-05-25 |
EP0908933A1 (de) | 1999-04-14 |
TW390040B (en) | 2000-05-11 |
KR100390670B1 (ko) | 2003-08-19 |
US5966622A (en) | 1999-10-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |