DE69836608D1 - MOS-Bildaufnahmevorrichtung - Google Patents

MOS-Bildaufnahmevorrichtung

Info

Publication number
DE69836608D1
DE69836608D1 DE69836608T DE69836608T DE69836608D1 DE 69836608 D1 DE69836608 D1 DE 69836608D1 DE 69836608 T DE69836608 T DE 69836608T DE 69836608 T DE69836608 T DE 69836608T DE 69836608 D1 DE69836608 D1 DE 69836608D1
Authority
DE
Germany
Prior art keywords
imaging device
mos imaging
mos
imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69836608T
Other languages
English (en)
Other versions
DE69836608T2 (de
Inventor
Tetsunobu Kochi
Isamu Ueno
Toru Koizumi
Hiroki Hiyama
Shigetoshi Sugawa
Katsuhisa Ogawa
Katsuhito Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP26354597A external-priority patent/JP3428875B2/ja
Priority claimed from JP36108997A external-priority patent/JP3487575B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69836608D1 publication Critical patent/DE69836608D1/de
Publication of DE69836608T2 publication Critical patent/DE69836608T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
DE69836608T 1997-09-29 1998-09-28 MOS-Bildaufnahmevorrichtung Expired - Lifetime DE69836608T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP26354597 1997-09-29
JP26354597A JP3428875B2 (ja) 1997-09-29 1997-09-29 光電変換装置
JP36108997A JP3487575B2 (ja) 1997-12-26 1997-12-26 光電変換装置
JP36108997 1997-12-26

Publications (2)

Publication Number Publication Date
DE69836608D1 true DE69836608D1 (de) 2007-01-25
DE69836608T2 DE69836608T2 (de) 2007-09-27

Family

ID=26546062

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69839899T Expired - Lifetime DE69839899D1 (de) 1997-09-29 1998-09-28 MOS-Bildaufnahmevorrichtung
DE69836608T Expired - Lifetime DE69836608T2 (de) 1997-09-29 1998-09-28 MOS-Bildaufnahmevorrichtung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69839899T Expired - Lifetime DE69839899D1 (de) 1997-09-29 1998-09-28 MOS-Bildaufnahmevorrichtung

Country Status (6)

Country Link
US (2) US6670990B1 (de)
EP (2) EP1592068B1 (de)
KR (1) KR100283638B1 (de)
CN (2) CN1276514C (de)
DE (2) DE69839899D1 (de)
TW (1) TW421962B (de)

Families Citing this family (136)

* Cited by examiner, † Cited by third party
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DE69836608T2 (de) 2007-09-27
US6670990B1 (en) 2003-12-30
EP0905788A3 (de) 2000-06-28
EP0905788B1 (de) 2006-12-13
CN1213931A (zh) 1999-04-14
US6946637B2 (en) 2005-09-20
TW421962B (en) 2001-02-11
EP0905788A2 (de) 1999-03-31
EP1592068A3 (de) 2006-12-27
US20040065808A1 (en) 2004-04-08
KR100283638B1 (ko) 2001-04-02
EP1592068A2 (de) 2005-11-02
KR19990030274A (ko) 1999-04-26
CN1276514C (zh) 2006-09-20
CN1155207C (zh) 2004-06-23
DE69839899D1 (de) 2008-09-25
EP1592068B1 (de) 2008-08-13

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