DE69838410D1 - Herstellungsverfahren einer optischen Halbleitervorrichtung - Google Patents
Herstellungsverfahren einer optischen HalbleitervorrichtungInfo
- Publication number
- DE69838410D1 DE69838410D1 DE69838410T DE69838410T DE69838410D1 DE 69838410 D1 DE69838410 D1 DE 69838410D1 DE 69838410 T DE69838410 T DE 69838410T DE 69838410 T DE69838410 T DE 69838410T DE 69838410 D1 DE69838410 D1 DE 69838410D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor device
- optical semiconductor
- optical
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/32025—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth non-polar orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
- H01S5/0035—Simulations of laser characteristics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0213—Sapphire, quartz or diamond based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
- H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/320275—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth semi-polar orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26531197A JP3955367B2 (ja) | 1997-09-30 | 1997-09-30 | 光半導体素子およびその製造方法 |
JP26531197 | 1997-09-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69838410D1 true DE69838410D1 (de) | 2007-10-25 |
DE69838410T2 DE69838410T2 (de) | 2008-06-05 |
Family
ID=17415444
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69838410T Expired - Lifetime DE69838410T2 (de) | 1997-09-30 | 1998-09-28 | Herstellungsverfahren einer optischen Halbleitervorrichtung |
Country Status (4)
Country | Link |
---|---|
US (3) | US6229151B1 (de) |
EP (1) | EP0905799B1 (de) |
JP (1) | JP3955367B2 (de) |
DE (1) | DE69838410T2 (de) |
Families Citing this family (77)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2298491C (en) | 1997-07-25 | 2009-10-06 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
JP3955367B2 (ja) * | 1997-09-30 | 2007-08-08 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | 光半導体素子およびその製造方法 |
US6849472B2 (en) * | 1997-09-30 | 2005-02-01 | Lumileds Lighting U.S., Llc | Nitride semiconductor device with reduced polarization fields |
JP3770014B2 (ja) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | 窒化物半導体素子 |
WO2000052796A1 (fr) | 1999-03-04 | 2000-09-08 | Nichia Corporation | Element de laser semiconducteur au nitrure |
JP2001007379A (ja) * | 1999-06-24 | 2001-01-12 | Sharp Corp | 窒化ガリウム系化合物半導体受光素子 |
US6590336B1 (en) | 1999-08-31 | 2003-07-08 | Murata Manufacturing Co., Ltd. | Light emitting device having a polar plane piezoelectric film and manufacture thereof |
US6821805B1 (en) * | 1999-10-06 | 2004-11-23 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device, semiconductor substrate, and manufacture method |
DE19953839A1 (de) * | 1999-11-09 | 2001-05-10 | Paul Drude Inst Fuer Festkoerp | Hocheffiziente UV-Emitter auf Nitridhalbleiterbasis |
EP1104031B1 (de) * | 1999-11-15 | 2012-04-11 | Panasonic Corporation | Nitrid-Halbleiterlaserdiode und deren Herstellungsverfahren |
US6515313B1 (en) * | 1999-12-02 | 2003-02-04 | Cree Lighting Company | High efficiency light emitters with reduced polarization-induced charges |
JP3929008B2 (ja) * | 2000-01-14 | 2007-06-13 | シャープ株式会社 | 窒化物系化合物半導体発光素子およびその製造方法 |
JP2002043592A (ja) | 2000-05-19 | 2002-02-08 | Agilent Technol Inc | 光導電性スイッチ |
JP2002164623A (ja) * | 2000-11-24 | 2002-06-07 | Nippon Telegr & Teleph Corp <Ntt> | 窒化物半導体レーザ及びその製造方法 |
JP2002374003A (ja) * | 2001-06-14 | 2002-12-26 | Ngk Insulators Ltd | 半導体素子、及び半導体素子用基板 |
WO2003003469A1 (en) * | 2001-06-29 | 2003-01-09 | Neokismet, L.L.C. | Quantum well energizing method and apparatus |
JP2003092426A (ja) * | 2001-09-18 | 2003-03-28 | Nichia Chem Ind Ltd | 窒化物系化合物半導体発光素子およびその製造方法 |
US6683327B2 (en) * | 2001-11-13 | 2004-01-27 | Lumileds Lighting U.S., Llc | Nucleation layer for improved light extraction from light emitting devices |
JP4307113B2 (ja) * | 2002-03-19 | 2009-08-05 | 宣彦 澤木 | 半導体発光素子およびその製造方法 |
US8809867B2 (en) * | 2002-04-15 | 2014-08-19 | The Regents Of The University Of California | Dislocation reduction in non-polar III-nitride thin films |
EP2154270A3 (de) * | 2002-04-15 | 2013-07-24 | The Regents of the University of California | Nicht polare Galliumnitriddünnfilme auf A-Ebene, die durch die metallorganische chemische Dampfablagerung gezüchtet werden |
US6876009B2 (en) | 2002-12-09 | 2005-04-05 | Nichia Corporation | Nitride semiconductor device and a process of manufacturing the same |
US7071494B2 (en) * | 2002-12-11 | 2006-07-04 | Lumileds Lighting U.S. Llc | Light emitting device with enhanced optical scattering |
US6900067B2 (en) | 2002-12-11 | 2005-05-31 | Lumileds Lighting U.S., Llc | Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers |
US7747660B1 (en) * | 2003-03-24 | 2010-06-29 | Symantec Operating Corporation | Method and system of providing access to a virtual storage device |
AU2003293497A1 (en) * | 2003-04-15 | 2005-07-21 | Japan Science And Technology Agency | Non-polar (a1,b,in,ga)n quantum wells |
FR2855653B1 (fr) * | 2003-05-27 | 2005-10-21 | Thales Sa | Structure amorphe de couplage optique pour detecteur d'ondes electromagnetiques et detecteur associe |
US7348600B2 (en) * | 2003-10-20 | 2008-03-25 | Nichia Corporation | Nitride semiconductor device, and its fabrication process |
US8035113B2 (en) * | 2004-04-15 | 2011-10-11 | The Trustees Of Boston University | Optical devices featuring textured semiconductor layers |
WO2005104236A2 (en) * | 2004-04-15 | 2005-11-03 | Trustees Of Boston University | Optical devices featuring textured semiconductor layers |
US7956360B2 (en) * | 2004-06-03 | 2011-06-07 | The Regents Of The University Of California | Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy |
US9130119B2 (en) * | 2006-12-11 | 2015-09-08 | The Regents Of The University Of California | Non-polar and semi-polar light emitting devices |
FI20041213A0 (fi) * | 2004-09-17 | 2004-09-17 | Optogan Oy | Puolijohdeheterorakenne |
US7432531B2 (en) * | 2005-02-07 | 2008-10-07 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
JP4917319B2 (ja) * | 2005-02-07 | 2012-04-18 | パナソニック株式会社 | トランジスタ |
US7341878B2 (en) * | 2005-03-14 | 2008-03-11 | Philips Lumileds Lighting Company, Llc | Wavelength-converted semiconductor light emitting device |
US7804100B2 (en) * | 2005-03-14 | 2010-09-28 | Philips Lumileds Lighting Company, Llc | Polarization-reversed III-nitride light emitting device |
WO2006101002A1 (ja) * | 2005-03-22 | 2006-09-28 | Kabushiki Kaisha Toyota Chuo Kenkyusho | 半導体発光素子と半導体受光素子とその製造方法 |
JP4939014B2 (ja) | 2005-08-30 | 2012-05-23 | 国立大学法人徳島大学 | Iii族窒化物半導体発光素子およびiii族窒化物半導体発光素子の製造方法 |
US7951617B2 (en) | 2005-10-06 | 2011-05-31 | Showa Denko K.K. | Group III nitride semiconductor stacked structure and production method thereof |
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CA2669228C (en) * | 2006-11-15 | 2014-12-16 | The Regents Of The University Of California | Method for heteroepitaxial growth of high-quality n-face gan, inn, and ain and their alloys by metal organic chemical vapor deposition |
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JP2008130606A (ja) * | 2006-11-16 | 2008-06-05 | Sony Corp | 半導体発光素子、半導体発光素子の製造方法、光源セルユニット、バックライト、照明装置、ディスプレイ、電子機器、半導体素子および半導体素子の製造方法 |
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EP2111634A4 (de) * | 2007-02-12 | 2014-01-08 | Univ California | Al(x)ga(1-x)n-verkleidungsfreie nichtpolare iii-nitrid-basierte laser-dioden und led-dioden |
JP5050574B2 (ja) * | 2007-03-05 | 2012-10-17 | 住友電気工業株式会社 | Iii族窒化物系半導体発光素子 |
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JP2009059974A (ja) * | 2007-09-03 | 2009-03-19 | Univ Meijo | 半導体基板、半導体発光素子および半導体基板の製造方法 |
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WO2009111790A1 (en) * | 2008-03-07 | 2009-09-11 | Trustees Of Boston University | Optical devices featuring nonpolar textured semiconductor layers |
TWI362769B (en) | 2008-05-09 | 2012-04-21 | Univ Nat Chiao Tung | Light emitting device and fabrication method therefor |
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WO2010029775A1 (ja) | 2008-09-11 | 2010-03-18 | 住友電気工業株式会社 | 窒化物系半導体光素子、窒化物系半導体光素子のためのエピタキシャルウエハ、及び半導体発光素子を製造する方法 |
JP4962743B2 (ja) * | 2008-12-19 | 2012-06-27 | セイコーエプソン株式会社 | 発光装置 |
JP5265404B2 (ja) * | 2009-02-04 | 2013-08-14 | パナソニック株式会社 | 窒化物半導体発光素子およびその製造方法 |
JP4450112B2 (ja) * | 2009-06-29 | 2010-04-14 | 住友電気工業株式会社 | 窒化物系半導体光素子 |
JP2011016676A (ja) * | 2009-07-07 | 2011-01-27 | Sumitomo Electric Ind Ltd | 窒化物半導体基板の製造方法 |
JP4905514B2 (ja) | 2009-07-15 | 2012-03-28 | 住友電気工業株式会社 | 窒化物系半導体発光素子 |
JP5381439B2 (ja) | 2009-07-15 | 2014-01-08 | 住友電気工業株式会社 | Iii族窒化物半導体光素子 |
JP2011023534A (ja) | 2009-07-15 | 2011-02-03 | Sumitomo Electric Ind Ltd | 窒化物系半導体発光素子 |
JP5233936B2 (ja) * | 2009-09-24 | 2013-07-10 | 住友電気工業株式会社 | 窒化物半導体基板 |
JP4835741B2 (ja) * | 2009-09-30 | 2011-12-14 | 住友電気工業株式会社 | 半導体発光素子を作製する方法 |
KR101007136B1 (ko) * | 2010-02-18 | 2011-01-10 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법 |
TWI416762B (zh) | 2010-08-23 | 2013-11-21 | Univ Nat Sun Yat Sen | 同質異相量子井 |
US8471366B2 (en) | 2011-11-30 | 2013-06-25 | Sumitomo Electric Industries, Ltd. | Nitride semiconductor substrate |
JP5468709B2 (ja) | 2012-03-05 | 2014-04-09 | パナソニック株式会社 | 窒化物半導体発光素子、光源及びその製造方法 |
US9000414B2 (en) * | 2012-11-16 | 2015-04-07 | Korea Photonics Technology Institute | Light emitting diode having heterogeneous protrusion structures |
JP6060652B2 (ja) * | 2012-11-28 | 2017-01-18 | 富士通株式会社 | 太陽電池及びその製造方法 |
JP2016195171A (ja) * | 2015-03-31 | 2016-11-17 | ウシオ電機株式会社 | 半導体発光素子及びその製造方法 |
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US4952792A (en) * | 1989-10-13 | 1990-08-28 | At&T Bell Laboratories | Devices employing internally strained asymmetric quantum wells |
CA2037198C (en) * | 1990-02-28 | 1996-04-23 | Katsuhide Manabe | Light-emitting semiconductor device using gallium nitride group compound |
EP0535293A1 (de) * | 1991-01-29 | 1993-04-07 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Verfahren zur Herstellung einer zusammengesetzten Halbleitervorrichtung |
US5777350A (en) * | 1994-12-02 | 1998-07-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting device |
US5661074A (en) * | 1995-02-03 | 1997-08-26 | Advanced Technology Materials, Inc. | High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same |
JPH08316582A (ja) * | 1995-05-19 | 1996-11-29 | Nec Corp | 半導体レーザ |
JP3905935B2 (ja) * | 1995-09-01 | 2007-04-18 | 株式会社東芝 | 半導体素子及び半導体素子の製造方法 |
US5719894A (en) * | 1996-09-25 | 1998-02-17 | Picolight Incorporated | Extended wavelength strained layer lasers having nitrogen disposed therein |
KR19980079320A (ko) * | 1997-03-24 | 1998-11-25 | 기다오까다까시 | 고품질 쥐에이엔계층의 선택성장방법, 고품질 쥐에이엔계층 성장기판 및 고품질 쥐에이엔계층 성장기판상에 제작하는 반도체디바이스 |
JP3955367B2 (ja) * | 1997-09-30 | 2007-08-08 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | 光半導体素子およびその製造方法 |
US6285698B1 (en) * | 1998-09-25 | 2001-09-04 | Xerox Corporation | MOCVD growth of InGaN quantum well laser structures on a grooved lower waveguiding layer |
US6515313B1 (en) | 1999-12-02 | 2003-02-04 | Cree Lighting Company | High efficiency light emitters with reduced polarization-induced charges |
JP5145617B2 (ja) | 2000-07-03 | 2013-02-20 | 日亜化学工業株式会社 | n型窒化物半導体積層体およびそれを用いる半導体素子 |
-
1997
- 1997-09-30 JP JP26531197A patent/JP3955367B2/ja not_active Expired - Lifetime
-
1998
- 1998-09-28 DE DE69838410T patent/DE69838410T2/de not_active Expired - Lifetime
- 1998-09-28 EP EP98307849A patent/EP0905799B1/de not_active Expired - Lifetime
- 1998-09-29 US US09/162,708 patent/US6229151B1/en not_active Expired - Lifetime
-
2000
- 2000-11-21 US US09/717,647 patent/US6569704B1/en not_active Expired - Lifetime
-
2001
- 2001-03-20 US US09/813,570 patent/US20010010372A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US6569704B1 (en) | 2003-05-27 |
JP3955367B2 (ja) | 2007-08-08 |
EP0905799A3 (de) | 2000-03-29 |
US20010010372A1 (en) | 2001-08-02 |
EP0905799B1 (de) | 2007-09-12 |
DE69838410T2 (de) | 2008-06-05 |
JPH11112029A (ja) | 1999-04-23 |
EP0905799A2 (de) | 1999-03-31 |
US6229151B1 (en) | 2001-05-08 |
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