DE69838468D1 - Herstellungsverfahren für Dünnschichtfeldeffekttransistor mit verminderter Streukapazität - Google Patents
Herstellungsverfahren für Dünnschichtfeldeffekttransistor mit verminderter StreukapazitätInfo
- Publication number
- DE69838468D1 DE69838468D1 DE69838468T DE69838468T DE69838468D1 DE 69838468 D1 DE69838468 D1 DE 69838468D1 DE 69838468 T DE69838468 T DE 69838468T DE 69838468 T DE69838468 T DE 69838468T DE 69838468 D1 DE69838468 D1 DE 69838468D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- thin film
- field effect
- effect transistor
- stray capacitance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/94—Laser ablative material removal
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/927,023 US6107641A (en) | 1997-09-10 | 1997-09-10 | Thin film transistor with reduced parasitic capacitance and reduced feed-through voltage |
US927023 | 1997-09-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69838468D1 true DE69838468D1 (de) | 2007-11-08 |
DE69838468T2 DE69838468T2 (de) | 2008-01-17 |
Family
ID=25454048
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69838468T Expired - Lifetime DE69838468T2 (de) | 1997-09-10 | 1998-08-17 | Herstellungsverfahren für Dünnschichtfeldeffekttransistor mit verminderter Streukapazität |
Country Status (4)
Country | Link |
---|---|
US (3) | US6107641A (de) |
EP (1) | EP0902481B1 (de) |
JP (2) | JP4750236B2 (de) |
DE (1) | DE69838468T2 (de) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3255942B2 (ja) * | 1991-06-19 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 逆スタガ薄膜トランジスタの作製方法 |
KR100266217B1 (ko) * | 1997-11-20 | 2000-09-15 | 구본준; 론 위라하디락사 | 플리커 방지용 액정표시장치 |
JP4174862B2 (ja) * | 1998-08-04 | 2008-11-05 | ソニー株式会社 | 薄膜トランジスタの製造方法および半導体装置の製造方法 |
KR100303446B1 (ko) * | 1998-10-29 | 2002-10-04 | 삼성전자 주식회사 | 액정표시장치용박막트랜지스터기판의제조방법 |
KR100284809B1 (ko) * | 1999-03-18 | 2001-03-15 | 구본준 | 다결정실리콘 박막트랜지스터 |
US6876003B1 (en) | 1999-04-15 | 2005-04-05 | Sumitomo Electric Industries, Ltd. | Semiconductor light-emitting device, method of manufacturing transparent conductor film and method of manufacturing compound semiconductor light-emitting device |
EP1208603A1 (de) | 1999-08-31 | 2002-05-29 | E Ink Corporation | Transistor für eine elektronische anzeigevorrichtung |
JP2001119029A (ja) * | 1999-10-18 | 2001-04-27 | Fujitsu Ltd | 薄膜トランジスタ及びその製造方法及びそれを備えた液晶表示装置 |
US6586318B1 (en) * | 1999-12-28 | 2003-07-01 | Xerox Corporation | Thin phosphorus nitride film as an N-type doping source used in laser doping technology |
KR20010082831A (ko) * | 2000-02-21 | 2001-08-31 | 구본준, 론 위라하디락사 | 액정표시장치의 제조방법 |
JP2001318627A (ja) | 2000-02-29 | 2001-11-16 | Semiconductor Energy Lab Co Ltd | 発光装置 |
JP2001257413A (ja) * | 2000-03-14 | 2001-09-21 | Toshiba Electronic Engineering Corp | 半導体レーザ装置及びその製造方法 |
DE10034873B4 (de) * | 2000-07-18 | 2005-10-13 | Pacifica Group Technologies Pty Ltd | Verfahren und Bremsanlage zum Regeln des Bremsvorgangs bei einem Kraftfahrzeug |
US6642085B1 (en) | 2000-11-03 | 2003-11-04 | The Regents Of The University Of California | Thin film transistors on plastic substrates with reflective coatings for radiation protection |
US7068788B2 (en) * | 2001-01-04 | 2006-06-27 | Maxim Integrated Products, Inc. | Data encryption for suppression of data-related in-band harmonics in digital to analog converters |
TW480728B (en) * | 2001-02-02 | 2002-03-21 | Hannstar Display Corp | Polysilicon thin film transistor structure and the manufacturing method thereof |
TW474023B (en) * | 2001-02-27 | 2002-01-21 | Hannstar Display Corp | Thin film transistor process of liquid crystal display |
US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
US6940142B2 (en) * | 2001-07-02 | 2005-09-06 | Xerox Corporation | Low data line capacitance image sensor array using air-gap metal crossover |
TW516240B (en) * | 2002-02-18 | 2003-01-01 | Ind Tech Res Inst | Method of fabricating film transistor on a transparent substrate |
GB0207533D0 (en) * | 2002-04-02 | 2002-05-08 | Oxford Glycosciences Uk Ltd | Protein |
JP4387091B2 (ja) * | 2002-11-05 | 2009-12-16 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
US6859311B2 (en) * | 2003-03-24 | 2005-02-22 | Memphis Eye & Cataract Associates Ambulatory Surgery Center | Digital micromirror device having a window transparent to ultraviolet (UV) light |
KR100500779B1 (ko) * | 2003-10-10 | 2005-07-12 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 어레이 기판의 제조 방법 |
SG115733A1 (en) * | 2004-03-12 | 2005-10-28 | Semiconductor Energy Lab | Thin film transistor, semiconductor device, and method for manufacturing the same |
KR100646939B1 (ko) * | 2005-08-29 | 2006-11-23 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그 제조방법 |
KR100659112B1 (ko) * | 2005-11-22 | 2006-12-19 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터 및 이의 제조 방법, 이를 구비한평판 디스플레이 장치 |
EP1791173A1 (de) * | 2005-11-25 | 2007-05-30 | STMicroelectronics S.r.l. | Herstellungsverfahren für einen MOSFET und entsprechender MOSFET |
KR100785019B1 (ko) * | 2006-06-09 | 2007-12-11 | 삼성전자주식회사 | 하부 게이트 박막 트랜지스터 및 그 제조방법 |
JP4565572B2 (ja) * | 2006-09-05 | 2010-10-20 | 株式会社フューチャービジョン | 液晶表示パネルの製造方法 |
TWI345671B (en) * | 2007-08-10 | 2011-07-21 | Au Optronics Corp | Thin film transistor, pixel structure and liquid crystal display panel |
US8110450B2 (en) | 2007-12-19 | 2012-02-07 | Palo Alto Research Center Incorporated | Printed TFT and TFT array with self-aligned gate |
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US20140061869A1 (en) * | 2012-08-31 | 2014-03-06 | Shelby F. Nelson | Electronic element including dielectric stack |
KR102080065B1 (ko) * | 2013-04-30 | 2020-04-07 | 엘지디스플레이 주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
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KR20150070648A (ko) * | 2013-12-17 | 2015-06-25 | 삼성디스플레이 주식회사 | 박막 트랜지스터 |
CN107026208B (zh) * | 2016-01-29 | 2020-11-13 | 日立金属株式会社 | 半导体装置和半导体装置的制造方法 |
JP6747247B2 (ja) * | 2016-01-29 | 2020-08-26 | 日立金属株式会社 | 半導体装置および半導体装置の製造方法 |
CN108288589B (zh) * | 2018-03-09 | 2021-11-23 | 广州新视界光电科技有限公司 | 一种薄膜晶体管及其制备方法以及薄膜晶体管驱动背板 |
CN113658869B (zh) * | 2021-08-16 | 2023-07-25 | 成都京东方光电科技有限公司 | 薄膜晶体管及其制作方法、显示器件 |
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US3760242A (en) * | 1972-03-06 | 1973-09-18 | Ibm | Coated semiconductor structures and methods of forming protective coverings on such structures |
JPH0691105B2 (ja) * | 1985-02-15 | 1994-11-14 | 株式会社日立製作所 | 薄膜トランジスタの製造方法 |
JPH0680683B2 (ja) * | 1985-11-20 | 1994-10-12 | 富士通株式会社 | 薄膜トランジスタの製造方法 |
JPS62205664A (ja) * | 1986-03-06 | 1987-09-10 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタの製造方法 |
JPH0391932A (ja) * | 1989-09-04 | 1991-04-17 | Canon Inc | 半導体装置の製造方法 |
JP3173854B2 (ja) * | 1992-03-25 | 2001-06-04 | 株式会社半導体エネルギー研究所 | 薄膜状絶縁ゲイト型半導体装置の作製方法及び作成された半導体装置 |
CN1052568C (zh) * | 1992-07-06 | 2000-05-17 | 株式会社半导体能源研究所 | 形成半导体器件的方法 |
JPH06224218A (ja) * | 1993-01-22 | 1994-08-12 | Sharp Corp | 半導体装置の製造方法 |
US5441905A (en) * | 1993-04-29 | 1995-08-15 | Industrial Technology Research Institute | Process of making self-aligned amorphous-silicon thin film transistors |
JPH07106578A (ja) * | 1993-10-07 | 1995-04-21 | Toshiba Corp | 薄膜トランジスタ及びその製造方法 |
JPH1056180A (ja) * | 1995-09-29 | 1998-02-24 | Canon Inc | 半導体装置及びその製造方法 |
JP3409542B2 (ja) * | 1995-11-21 | 2003-05-26 | ソニー株式会社 | 半導体装置の製造方法 |
JPH09139505A (ja) * | 1995-11-10 | 1997-05-27 | Sony Corp | 薄膜半導体装置 |
US5733804A (en) * | 1995-12-22 | 1998-03-31 | Xerox Corporation | Fabricating fully self-aligned amorphous silicon device |
US5637519A (en) * | 1996-03-21 | 1997-06-10 | Industrial Technology Research Institute | Method of fabricating a lightly doped drain thin-film transistor |
-
1997
- 1997-09-10 US US08/927,023 patent/US6107641A/en not_active Expired - Lifetime
- 1997-10-29 US US08/960,025 patent/US6019796A/en not_active Expired - Lifetime
- 1997-10-29 US US08/959,590 patent/US6020223A/en not_active Expired - Lifetime
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1998
- 1998-08-17 EP EP98115454A patent/EP0902481B1/de not_active Expired - Lifetime
- 1998-08-17 DE DE69838468T patent/DE69838468T2/de not_active Expired - Lifetime
- 1998-09-03 JP JP24951098A patent/JP4750236B2/ja not_active Expired - Lifetime
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2010
- 2010-01-26 JP JP2010014521A patent/JP2010093305A/ja active Pending
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EP0902481B1 (de) | 2007-09-26 |
JP2010093305A (ja) | 2010-04-22 |
JPH11135802A (ja) | 1999-05-21 |
US6019796A (en) | 2000-02-01 |
US6107641A (en) | 2000-08-22 |
US6020223A (en) | 2000-02-01 |
EP0902481A2 (de) | 1999-03-17 |
EP0902481A3 (de) | 2000-06-21 |
DE69838468T2 (de) | 2008-01-17 |
JP4750236B2 (ja) | 2011-08-17 |
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