DE69841188D1 - Ansteuerungsverfahren für ein Festkörperbildaufnahmevorrichtung, ausgestattet mit einer Überlaufstruktur - Google Patents

Ansteuerungsverfahren für ein Festkörperbildaufnahmevorrichtung, ausgestattet mit einer Überlaufstruktur

Info

Publication number
DE69841188D1
DE69841188D1 DE69841188T DE69841188T DE69841188D1 DE 69841188 D1 DE69841188 D1 DE 69841188D1 DE 69841188 T DE69841188 T DE 69841188T DE 69841188 T DE69841188 T DE 69841188T DE 69841188 D1 DE69841188 D1 DE 69841188D1
Authority
DE
Germany
Prior art keywords
image pickup
solid state
device provided
pickup device
driving method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69841188T
Other languages
English (en)
Inventor
Ryoji Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69841188D1 publication Critical patent/DE69841188D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H04N25/575—Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/622—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by controlling anti-blooming drains

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE69841188T 1997-03-04 1998-03-03 Ansteuerungsverfahren für ein Festkörperbildaufnahmevorrichtung, ausgestattet mit einer Überlaufstruktur Expired - Lifetime DE69841188D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04897897A JP3915161B2 (ja) 1997-03-04 1997-03-04 ブルーミング防止構造を備えた固体撮像素子のダイナミックレンジ拡大方法とその固体撮像素子

Publications (1)

Publication Number Publication Date
DE69841188D1 true DE69841188D1 (de) 2009-11-12

Family

ID=12818353

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69841188T Expired - Lifetime DE69841188D1 (de) 1997-03-04 1998-03-03 Ansteuerungsverfahren für ein Festkörperbildaufnahmevorrichtung, ausgestattet mit einer Überlaufstruktur

Country Status (5)

Country Link
US (1) US6002123A (de)
EP (1) EP0863663B1 (de)
JP (1) JP3915161B2 (de)
KR (1) KR100542171B1 (de)
DE (1) DE69841188D1 (de)

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US6847070B2 (en) * 2000-08-09 2005-01-25 Dalsa, Inc. Five transistor CMOS pixel
US7045753B1 (en) 2000-08-09 2006-05-16 Dalsa, Inc. Five transistor CMOS pixel
US6566697B1 (en) 2000-11-28 2003-05-20 Dalsa, Inc. Pinned photodiode five transistor pixel
WO2002051129A1 (de) * 2000-12-21 2002-06-27 Stmicroelectronics N.V. Bildsensoreinrichtung mit überlaufschutz
JP3724374B2 (ja) * 2001-01-15 2005-12-07 ソニー株式会社 固体撮像装置及びその駆動方法
JP2002330346A (ja) * 2001-05-02 2002-11-15 Fujitsu Ltd Ｃｍｏｓセンサ回路
US20020171752A1 (en) * 2001-05-18 2002-11-21 Baer Richard L. Apparatus and method for reducing saturation artifacts in digital images captured using frame-transfer CCD sensor with reduced-height storage area
KR100504562B1 (ko) * 2001-07-18 2005-08-03 매그나칩 반도체 유한회사 씨모스 이미지 센서
KR20040029951A (ko) * 2001-08-24 2004-04-08 다이얼로그 세미컨덕터 게엠베하 완전 집적된 고체 상태 촬상기 및 카메라 회로
US7298406B2 (en) * 2002-01-16 2007-11-20 Micron Technology, Inc. Ground referenced pixel reset
US6909459B2 (en) 2002-08-21 2005-06-21 Alpha Innotech Corporation Method of and apparatus for extending signal ranges of digital images
JP3951879B2 (ja) 2002-10-04 2007-08-01 ソニー株式会社 固体撮像素子及びその駆動方法
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JP4529027B2 (ja) * 2004-09-06 2010-08-25 ルネサスエレクトロニクス株式会社 固体撮像装置
KR100621561B1 (ko) * 2004-11-05 2006-09-19 삼성전자주식회사 Ｃｍｏｓ 이미지 센서 및 그 구동 방법
JP4459064B2 (ja) 2005-01-14 2010-04-28 キヤノン株式会社 固体撮像装置、その制御方法及びカメラ
US7728896B2 (en) 2005-07-12 2010-06-01 Micron Technology, Inc. Dual conversion gain gate and capacitor and HDR combination
US7829832B2 (en) * 2005-08-30 2010-11-09 Aptina Imaging Corporation Method for operating a pixel cell using multiple pulses to a transistor transfer gate
JP5051994B2 (ja) * 2005-09-26 2012-10-17 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および撮像装置
JP4797558B2 (ja) * 2005-10-17 2011-10-19 ソニー株式会社 固体撮像素子とその駆動方法、及びカメラモジュール
CN1956490B (zh) * 2005-10-28 2012-06-20 索尼株式会社 固态成像器件、驱动固态成像器件的方法和成像设备
JP4713997B2 (ja) 2005-10-28 2011-06-29 株式会社東芝 固体撮像装置
JP4607006B2 (ja) 2005-12-27 2011-01-05 京セラ株式会社 映像信号処理方法および映像信号処理装置
JP4375364B2 (ja) 2006-07-14 2009-12-02 ソニー株式会社 固体撮像装置の駆動方法
JP4548425B2 (ja) * 2007-01-09 2010-09-22 ソニー株式会社 固体撮像素子及びその駆動方法
JP5584982B2 (ja) 2009-02-09 2014-09-10 ソニー株式会社 固体撮像素子およびカメラシステム
US8023023B2 (en) 2007-04-24 2011-09-20 Canon Kabushiki Kaisha Image sensing apparatus including charge transfer operation and control method therefor
JP4967801B2 (ja) * 2007-05-17 2012-07-04 ソニー株式会社 電源装置および電源装置の動作方法
JP5598126B2 (ja) 2010-07-09 2014-10-01 ソニー株式会社 固体撮像素子およびカメラシステム
JP5054183B2 (ja) * 2010-07-30 2012-10-24 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 固体撮像装置
KR101475285B1 (ko) * 2010-08-12 2014-12-23 연세대학교 산학협력단 씨모스 이미지 센서 및 그것의 동작 방법
JP5635937B2 (ja) * 2011-03-31 2014-12-03 本田技研工業株式会社 固体撮像装置
JP5829036B2 (ja) 2011-03-31 2015-12-09 本田技研工業株式会社 単位画素の信号加算方法
JP5635938B2 (ja) 2011-03-31 2014-12-03 本田技研工業株式会社 固体撮像装置
KR101251744B1 (ko) * 2011-04-13 2013-04-05 엘지이노텍 주식회사 Ｗｄｒ 픽셀 어레이, 이를 포함하는 ｗｄｒ 이미징 장치 및 그 구동방법
KR101241553B1 (ko) * 2011-04-13 2013-03-11 엘지이노텍 주식회사 Ｗｄｒ 픽셀 어레이, 이를 포함하는 ｗｄｒ 이미징 장치 및 그 구동방법
EP2874388B1 (de) * 2013-11-15 2019-05-15 Sony Depthsensing Solutions Verfahren zur Vermeidung von Pixelsättigung
US9654710B2 (en) 2013-12-10 2017-05-16 Gvbb Holdings S.A.R.L. Photodiode limiter
JP6987603B2 (ja) * 2017-10-26 2022-01-05 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の駆動方法、および電子機器
JP2021060275A (ja) * 2019-10-07 2021-04-15 ソニーセミコンダクタソリューションズ株式会社 受光素子及び測距装置
EP4072126A4 (de) * 2019-12-02 2023-01-25 Sony Semiconductor Solutions Corporation Festkörperbildgebungsvorrichtung und elektronisches gerät

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JPH0720215B2 (ja) * 1984-11-26 1995-03-06 株式会社日立製作所 固体撮像装置
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Also Published As

Publication number Publication date
EP0863663A3 (de) 1999-10-27
US6002123A (en) 1999-12-14
JP3915161B2 (ja) 2007-05-16
EP0863663A2 (de) 1998-09-09
EP0863663B1 (de) 2009-09-30
JPH10248035A (ja) 1998-09-14
KR100542171B1 (ko) 2006-03-23
KR19980079872A (ko) 1998-11-25

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