DE69841399D1 - Vorrichtung und Verfahren zur Trocknungsbehandlung - Google Patents

Vorrichtung und Verfahren zur Trocknungsbehandlung

Info

Publication number
DE69841399D1
DE69841399D1 DE69841399T DE69841399T DE69841399D1 DE 69841399 D1 DE69841399 D1 DE 69841399D1 DE 69841399 T DE69841399 T DE 69841399T DE 69841399 T DE69841399 T DE 69841399T DE 69841399 D1 DE69841399 D1 DE 69841399D1
Authority
DE
Germany
Prior art keywords
drying treatment
drying
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69841399T
Other languages
English (en)
Inventor
Yuji Kamikawa
Teruomi Minami
Shigenori Kitahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE69841399D1 publication Critical patent/DE69841399D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
DE69841399T 1997-09-17 1998-09-17 Vorrichtung und Verfahren zur Trocknungsbehandlung Expired - Lifetime DE69841399D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26921497A JP3194036B2 (ja) 1997-09-17 1997-09-17 乾燥処理装置及び乾燥処理方法

Publications (1)

Publication Number Publication Date
DE69841399D1 true DE69841399D1 (de) 2010-02-04

Family

ID=17469268

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69841399T Expired - Lifetime DE69841399D1 (de) 1997-09-17 1998-09-17 Vorrichtung und Verfahren zur Trocknungsbehandlung

Country Status (5)

Country Link
US (1) US6029371A (de)
EP (1) EP0903775B1 (de)
JP (1) JP3194036B2 (de)
KR (1) KR100417271B1 (de)
DE (1) DE69841399D1 (de)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW539918B (en) * 1997-05-27 2003-07-01 Tokyo Electron Ltd Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process
US6113698A (en) * 1997-07-10 2000-09-05 Applied Materials, Inc. Degassing method and apparatus
US6158141A (en) * 1998-05-07 2000-12-12 Sony Corporation Apparatus and method for drying semiconductor substrate
US6328809B1 (en) 1998-10-09 2001-12-11 Scp Global Technologies, Inc. Vapor drying system and method
AT407680B (de) * 1999-06-04 2001-05-25 Sez Semiconduct Equip Zubehoer Verfahren und vorrichtung zum trocknen von scheibenförmigen gegenständen
US6334266B1 (en) 1999-09-20 2002-01-01 S.C. Fluids, Inc. Supercritical fluid drying system and method of use
US6508259B1 (en) * 1999-08-05 2003-01-21 S.C. Fluids, Inc. Inverted pressure vessel with horizontal through loading
US6497239B2 (en) 1999-08-05 2002-12-24 S. C. Fluids, Inc. Inverted pressure vessel with shielded closure mechanism
US6748960B1 (en) 1999-11-02 2004-06-15 Tokyo Electron Limited Apparatus for supercritical processing of multiple workpieces
EP1234322A2 (de) * 1999-11-02 2002-08-28 Tokyo Electron Limited Verfahren und vorrichtungen zur überkritischen verarbeitung von werkstücken
KR100750018B1 (ko) * 2000-07-26 2007-08-16 동경 엘렉트론 주식회사 반도체 기판의 처리를 위한 고압 챔버 및 반도체 기판의고압 처리를 위한 장치
KR100417040B1 (ko) * 2000-08-03 2004-02-05 삼성전자주식회사 웨이퍼를 건조시키기 위한 방법 및 이를 수행하기 위한웨이퍼 건조장치
KR100655652B1 (ko) 2001-02-22 2006-12-08 삼성전자주식회사 기판의 건조 장치
US20020189543A1 (en) * 2001-04-10 2002-12-19 Biberger Maximilian A. High pressure processing chamber for semiconductor substrate including flow enhancing features
US6519869B2 (en) * 2001-05-15 2003-02-18 United Microelectronics, Corp. Method and apparatus for drying semiconductor wafers
US6564469B2 (en) * 2001-07-09 2003-05-20 Motorola, Inc. Device for performing surface treatment on semiconductor wafers
KR20030006245A (ko) 2001-07-12 2003-01-23 삼성전자 주식회사 웨이퍼 건조장치
US6764386B2 (en) * 2002-01-11 2004-07-20 Applied Materials, Inc. Air bearing-sealed micro-processing chamber
AU2003215238A1 (en) * 2002-02-15 2003-09-09 Supercritical Systems Inc. Pressure enchanced diaphragm valve
US6712883B2 (en) * 2002-02-25 2004-03-30 Lg.Philips Lcd Co., Ltd. Apparatus and method for deaerating liquid crystal
US6837253B1 (en) * 2002-04-22 2005-01-04 Imtec Acculine, Inc. Processing tank with improved quick dump valve
KR100493849B1 (ko) * 2002-09-30 2005-06-08 삼성전자주식회사 웨이퍼 건조 장치
US6722642B1 (en) 2002-11-06 2004-04-20 Tokyo Electron Limited High pressure compatible vacuum chuck for semiconductor wafer including lift mechanism
US6918192B2 (en) * 2002-11-07 2005-07-19 Taiwan Semiconductor Manufacturing Co., Ltd. Substrate drying system
DE10256696A1 (de) * 2002-12-04 2004-06-24 Mattson Wet Products Gmbh Verfahren zum Trocknen von Substraten
US7270137B2 (en) * 2003-04-28 2007-09-18 Tokyo Electron Limited Apparatus and method of securing a workpiece during high-pressure processing
US20050034660A1 (en) * 2003-08-11 2005-02-17 Supercritical Systems, Inc. Alignment means for chamber closure to reduce wear on surfaces
DE10353076A1 (de) * 2003-11-13 2005-06-02 Infineon Technologies Ag Überwachungseinrichtung für eine Marangoni-Trockneranlage
US7250374B2 (en) * 2004-06-30 2007-07-31 Tokyo Electron Limited System and method for processing a substrate using supercritical carbon dioxide processing
DE102004044176A1 (de) * 2004-09-13 2006-03-30 BSH Bosch und Siemens Hausgeräte GmbH Trocknungsverfahren für ein Haushaltsgerät und Haushaltsgerät zur Durchführung des Trocknungsverfahren
US7307019B2 (en) * 2004-09-29 2007-12-11 Tokyo Electron Limited Method for supercritical carbon dioxide processing of fluoro-carbon films
US20060065288A1 (en) * 2004-09-30 2006-03-30 Darko Babic Supercritical fluid processing system having a coating on internal members and a method of using
US7491036B2 (en) * 2004-11-12 2009-02-17 Tokyo Electron Limited Method and system for cooling a pump
US20060102590A1 (en) * 2004-11-12 2006-05-18 Tokyo Electron Limited Method for treating a substrate with a high pressure fluid using a preoxide-based process chemistry
US20060102591A1 (en) * 2004-11-12 2006-05-18 Tokyo Electron Limited Method and system for treating a substrate using a supercritical fluid
US20060102204A1 (en) * 2004-11-12 2006-05-18 Tokyo Electron Limited Method for removing a residue from a substrate using supercritical carbon dioxide processing
US20060102208A1 (en) * 2004-11-12 2006-05-18 Tokyo Electron Limited System for removing a residue from a substrate using supercritical carbon dioxide processing
US20060130966A1 (en) * 2004-12-20 2006-06-22 Darko Babic Method and system for flowing a supercritical fluid in a high pressure processing system
US7140393B2 (en) * 2004-12-22 2006-11-28 Tokyo Electron Limited Non-contact shuttle valve for flow diversion in high pressure systems
US20060135047A1 (en) * 2004-12-22 2006-06-22 Alexei Sheydayi Method and apparatus for clamping a substrate in a high pressure processing system
US20060134332A1 (en) * 2004-12-22 2006-06-22 Darko Babic Precompressed coating of internal members in a supercritical fluid processing system
US7434590B2 (en) * 2004-12-22 2008-10-14 Tokyo Electron Limited Method and apparatus for clamping a substrate in a high pressure processing system
US7435447B2 (en) * 2005-02-15 2008-10-14 Tokyo Electron Limited Method and system for determining flow conditions in a high pressure processing system
US20060180572A1 (en) * 2005-02-15 2006-08-17 Tokyo Electron Limited Removal of post etch residue for a substrate with open metal surfaces
US20060180174A1 (en) * 2005-02-15 2006-08-17 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using a peroxide-based process chemistry in conjunction with an initiator
US7291565B2 (en) * 2005-02-15 2007-11-06 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
US7767145B2 (en) 2005-03-28 2010-08-03 Toyko Electron Limited High pressure fourier transform infrared cell
US20060226117A1 (en) * 2005-03-29 2006-10-12 Bertram Ronald T Phase change based heating element system and method
US20060255012A1 (en) * 2005-05-10 2006-11-16 Gunilla Jacobson Removal of particles from substrate surfaces using supercritical processing
US7789971B2 (en) * 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
US7524383B2 (en) * 2005-05-25 2009-04-28 Tokyo Electron Limited Method and system for passivating a processing chamber
KR100616034B1 (ko) 2005-07-01 2006-08-28 오성엘에스티(주) 기판처리장치
US7637029B2 (en) * 2005-07-08 2009-12-29 Tokyo Electron Limited Vapor drying method, apparatus and recording medium for use in the method
US20070012337A1 (en) * 2005-07-15 2007-01-18 Tokyo Electron Limited In-line metrology for supercritical fluid processing
US7537114B2 (en) * 2006-01-25 2009-05-26 International Business Machines Corporation System and method for storing and transporting photomasks in fluid
JP4527670B2 (ja) * 2006-01-25 2010-08-18 東京エレクトロン株式会社 加熱処理装置、加熱処理方法、制御プログラムおよびコンピュータ読取可能な記憶媒体
KR100786700B1 (ko) 2006-07-14 2007-12-21 삼성전자주식회사 건조 방법 및 이를 수행하기 위한 장치
JP4762835B2 (ja) * 2006-09-07 2011-08-31 東京エレクトロン株式会社 基板処理方法、基板処理装置、プログラムおよびプログラム記録媒体
KR20080034351A (ko) * 2006-10-16 2008-04-21 삼성에스디아이 주식회사 유기전계 발광표시장치용 기판의 건조 장치 및 방법
JP4805862B2 (ja) 2007-02-21 2011-11-02 富士通セミコンダクター株式会社 基板処理装置、基板処理方法、及び半導体装置の製造方法
US8002901B1 (en) 2009-01-15 2011-08-23 Wd Media, Inc. Temperature dependent pull speeds for drying of a wet cleaned workpiece
US20120047764A1 (en) * 2010-08-24 2012-03-01 David Campion System and method for drying substrates
CN103234328B (zh) * 2013-03-28 2015-04-08 京东方科技集团股份有限公司 一种基板减压干燥方法及装置
US8945281B1 (en) 2014-01-30 2015-02-03 Msp Corporation Method and apparatus for vapor generation and wafer cleaning
JP6559602B2 (ja) * 2015-09-18 2019-08-14 東京エレクトロン株式会社 基板処理装置および処理チャンバ洗浄方法
US10957529B2 (en) * 2016-11-28 2021-03-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method for drying wafer with gaseous fluid
JP7281925B2 (ja) * 2019-03-07 2023-05-26 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
JP7214550B2 (ja) * 2019-04-19 2023-01-30 株式会社Ｓｃｒｅｅｎ Ｓｐｅ テック 乾燥装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5115576A (en) * 1989-10-27 1992-05-26 Semifab Incorporated Vapor device and method for drying articles such as semiconductor wafers with substances such as isopropyl alcohol
US4977688A (en) * 1989-10-27 1990-12-18 Semifab Incorporated Vapor device and method for drying articles such as semiconductor wafers with substances such as isopropyl alcohol
US5571337A (en) * 1994-11-14 1996-11-05 Yieldup International Method for cleaning and drying a semiconductor wafer
KR100189779B1 (ko) * 1995-12-04 1999-06-01 윤종용 웨이퍼의 건조장치
KR980012044A (ko) * 1996-03-01 1998-04-30 히가시 데츠로 기판건조장치 및 기판건조방법

Also Published As

Publication number Publication date
EP0903775B1 (de) 2009-12-23
KR19990029868A (ko) 1999-04-26
EP0903775A3 (de) 2004-01-28
US6029371A (en) 2000-02-29
JP3194036B2 (ja) 2001-07-30
JPH1183316A (ja) 1999-03-26
KR100417271B1 (ko) 2004-03-19
EP0903775A2 (de) 1999-03-24

Similar Documents

Publication Publication Date Title
DE69841399D1 (de) Vorrichtung und Verfahren zur Trocknungsbehandlung
DE69838120D1 (de) Verfahren zur Trockenbehandlung und dazu verwendete Vorrichtung
DE69822687D1 (de) Vorrichtung und Verfahren zur Zusammenfassung
DE69515593D1 (de) Verfahren und Vorrichtung zur Oberflächenbehandlung
DE69829336D1 (de) Vorrichtung und Verfahren zur Behandlung von Körpergewebe
DE69631566D1 (de) Vorrichtung und Verfahren zur Waschbehandlung
DE69807538T2 (de) Vorrichtung und Verfahren zur Behandlung von Gewebe
DE69930560D1 (de) Verfahren und Vorrichtung zur Mustererkennung
DE69936687D1 (de) Vorrichtung und Verfahren zur Mehrfachbelichtung
DE69532091D1 (de) Verfahren und Vorrichtung zur Durchführung von Messungen
DE69504254D1 (de) Vorrichtung und Verfahren zur Halbleitersbearbeitung
DE69730097D1 (de) Verfahren und Vorrichtung zur Behandlung von Wafers
DE69823389D1 (de) Verfahren und vorrichtung zur wasserbehandlung
DE69528743T2 (de) Verfahren und Vorrichtung zur Plasmabehandlung
DE69918306T2 (de) Verfahren und vorrichtung zur behandlung von arrythmien
DE69725288D1 (de) Verfahren und vorrichtung zur dampfverteilung
DE59812855D1 (de) Verfahren und vorrichtung zur behandlung von frischfleisch
DE69629101D1 (de) Verfahren und Vorrichtung zur Oberflächenbehandlung
DE69942553D1 (de) Vorrichtung und Verfahren zur Zeitmessung
DE69928852D1 (de) Vorrichtung und Verfahren zur Unterstützung der Programmierung
DE69709805T2 (de) Vorrichtung und Verfahren zur kontinuierlichen Reinigung
DE69818413D1 (de) Bildherstellungverfahren und Vorrichtung zur Bildherstellung
DE69729039T2 (de) Verfahren und vorrichtung zur behandlung von flaschen
DE69821825D1 (de) Vorrichtung und Verfahren zum Sterilisieren
DE69809164D1 (de) Verfahren und Vorrichtung zur Bildverarbeitung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition