DE69842097D1 - Ausrichtung von einer clusteradresse zu blockadressen in einem nicht-flüchtigen halbleiter-massenspeicher - Google Patents

Ausrichtung von einer clusteradresse zu blockadressen in einem nicht-flüchtigen halbleiter-massenspeicher

Info

Publication number
DE69842097D1
DE69842097D1 DE69842097T DE69842097T DE69842097D1 DE 69842097 D1 DE69842097 D1 DE 69842097D1 DE 69842097 T DE69842097 T DE 69842097T DE 69842097 T DE69842097 T DE 69842097T DE 69842097 D1 DE69842097 D1 DE 69842097D1
Authority
DE
Germany
Prior art keywords
alignment
volatile semiconductor
block addresses
mass memory
cluster address
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69842097T
Other languages
English (en)
Inventor
Petro Estakhri
Berhau Iman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Lexar Media Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lexar Media Inc filed Critical Lexar Media Inc
Application granted granted Critical
Publication of DE69842097D1 publication Critical patent/DE69842097D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/0223User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023Free address space management
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/0223User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023Free address space management
    • G06F12/0238Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0602Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/061Improving I/O performance
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0628Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0638Organizing or formatting or addressing of data
    • G06F3/064Management of blocks
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0668Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671In-line storage system
    • G06F3/0673Single storage device
    • G06F3/0679Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/08Address circuits; Decoders; Word-line control circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/10Programming or data input circuits
    • G11C16/102External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70Masking faults in memories by using spares or by reconfiguring
    • G11C29/76Masking faults in memories by using spares or by reconfiguring using address translation or modifications
    • G11C29/765Masking faults in memories by using spares or by reconfiguring using address translation or modifications in solid state disks
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70Masking faults in memories by using spares or by reconfiguring
    • G11C29/78Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/816Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout
    • G11C29/82Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout for EEPROMs
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
DE69842097T 1997-11-24 1998-11-24 Ausrichtung von einer clusteradresse zu blockadressen in einem nicht-flüchtigen halbleiter-massenspeicher Expired - Lifetime DE69842097D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/976,557 US6125435A (en) 1995-09-13 1997-11-24 Alignment of cluster address to block addresses within a semiconductor non-volatile mass storage memory
PCT/US1998/025342 WO1999027453A1 (en) 1997-11-24 1998-11-24 Alignment of cluster address to block addresses within a semiconductor non-volatile mass storage memory

Publications (1)

Publication Number Publication Date
DE69842097D1 true DE69842097D1 (de) 2011-02-24

Family

ID=25524222

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69842097T Expired - Lifetime DE69842097D1 (de) 1997-11-24 1998-11-24 Ausrichtung von einer clusteradresse zu blockadressen in einem nicht-flüchtigen halbleiter-massenspeicher

Country Status (5)

Country Link
US (1) US6125435A (de)
EP (1) EP1036364B1 (de)
AU (1) AU1538899A (de)
DE (1) DE69842097D1 (de)
WO (1) WO1999027453A1 (de)

Families Citing this family (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6978342B1 (en) 1995-07-31 2005-12-20 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US6728851B1 (en) 1995-07-31 2004-04-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US8171203B2 (en) 1995-07-31 2012-05-01 Micron Technology, Inc. Faster write operations to nonvolatile memory using FSInfo sector manipulation
US5845313A (en) 1995-07-31 1998-12-01 Lexar Direct logical block addressing flash memory mass storage architecture
US6182188B1 (en) * 1997-04-06 2001-01-30 Intel Corporation Method of performing reliable updates in a symmetrically blocked nonvolatile memory having a bifurcated storage architecture
JP3588231B2 (ja) * 1997-08-04 2004-11-10 東京エレクトロンデバイス株式会社 データ処理システム及びブロック消去型記憶媒体
JP3177491B2 (ja) * 1997-10-07 2001-06-18 三洋電機株式会社 ディジタルカメラ
JP3714969B2 (ja) 1998-03-02 2005-11-09 レクサー・メディア・インコーポレイテッド 改良されたオペレーティングモード検出機能を備えたフラッシュメモリーカード及びユーザフレンドリなインターフェーシングシステム
US6915375B2 (en) * 1998-08-31 2005-07-05 Sony Corporation Memory apparatus and a data-processing apparatus, and method for using the memory apparatus
KR100544175B1 (ko) * 1999-05-08 2006-01-23 삼성전자주식회사 링킹 타입 정보를 저장하는 기록 매체와 결함 영역 처리 방법
CN100442393C (zh) 1999-10-21 2008-12-10 松下电器产业株式会社 半导体存储卡的访问装置、初始化方法和半导体存储卡
US6426893B1 (en) 2000-02-17 2002-07-30 Sandisk Corporation Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
US6578102B1 (en) * 2000-04-18 2003-06-10 International Business Machines Corporation Tracking and control of prefetch data in a PCI bus system
US7167944B1 (en) 2000-07-21 2007-01-23 Lexar Media, Inc. Block management for mass storage
US7155559B1 (en) * 2000-08-25 2006-12-26 Lexar Media, Inc. Flash memory architecture with separate storage of overhead and user data
US6772274B1 (en) 2000-09-13 2004-08-03 Lexar Media, Inc. Flash memory system and method implementing LBA to PBA correlation within flash memory array
US7113432B2 (en) 2000-09-14 2006-09-26 Sandisk Corporation Compressed event counting technique and application to a flash memory system
US6763424B2 (en) 2001-01-19 2004-07-13 Sandisk Corporation Partial block data programming and reading operations in a non-volatile memory
US6732221B2 (en) 2001-06-01 2004-05-04 M-Systems Flash Disk Pioneers Ltd Wear leveling of static areas in flash memory
JP4256600B2 (ja) * 2001-06-19 2009-04-22 Tdk株式会社 メモリコントローラ、メモリコントローラを備えるフラッシュメモリシステム及びフラッシュメモリの制御方法
GB0123410D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Memory system for data storage and retrieval
GB0123421D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Power management system
GB0123415D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Method of writing data to non-volatile memory
GB0123416D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Non-volatile memory control
US6977847B2 (en) * 2001-11-23 2005-12-20 M-Systems Flash Disk Pioneers Ltd. Detecting partially erased units in flash devices
DE60332091D1 (de) * 2002-01-31 2010-05-27 Panasonic Corp Informationsverarbeitungsvorrichtung, speicherverwaltungsvorrichtung, speicherverwaltungsverfahren und informationsverarbeitungsverfahren
JP2005518589A (ja) * 2002-02-22 2005-06-23 レクサー メディア,インク. インジケータライトが一体化されたリムーバブル記憶媒体
US7231643B1 (en) 2002-02-22 2007-06-12 Lexar Media, Inc. Image rescue system including direct communication between an application program and a device driver
CN101231618B (zh) * 2002-10-02 2012-06-13 松下电器产业株式会社 非易失性存储器装置的控制方法
US7254668B1 (en) 2002-10-28 2007-08-07 Sandisk Corporation Method and apparatus for grouping pages within a block
US7039788B1 (en) 2002-10-28 2006-05-02 Sandisk Corporation Method and apparatus for splitting a logical block
US6973531B1 (en) 2002-10-28 2005-12-06 Sandisk Corporation Tracking the most frequently erased blocks in non-volatile memory systems
US20040083334A1 (en) * 2002-10-28 2004-04-29 Sandisk Corporation Method and apparatus for managing the integrity of data in non-volatile memory system
US7035967B2 (en) * 2002-10-28 2006-04-25 Sandisk Corporation Maintaining an average erase count in a non-volatile storage system
US7234036B1 (en) 2002-10-28 2007-06-19 Sandisk Corporation Method and apparatus for resolving physical blocks associated with a common logical block
US7526599B2 (en) * 2002-10-28 2009-04-28 Sandisk Corporation Method and apparatus for effectively enabling an out of sequence write process within a non-volatile memory system
US8412879B2 (en) * 2002-10-28 2013-04-02 Sandisk Technologies Inc. Hybrid implementation for error correction codes within a non-volatile memory system
US6831865B2 (en) * 2002-10-28 2004-12-14 Sandisk Corporation Maintaining erase counts in non-volatile storage systems
US7103732B1 (en) 2002-10-28 2006-09-05 Sandisk Corporation Method and apparatus for managing an erase count block
US7181611B2 (en) * 2002-10-28 2007-02-20 Sandisk Corporation Power management block for use in a non-volatile memory system
US7171536B2 (en) * 2002-10-28 2007-01-30 Sandisk Corporation Unusable block management within a non-volatile memory system
US7174440B2 (en) * 2002-10-28 2007-02-06 Sandisk Corporation Method and apparatus for performing block caching in a non-volatile memory system
US6985992B1 (en) 2002-10-28 2006-01-10 Sandisk Corporation Wear-leveling in non-volatile storage systems
US7096313B1 (en) 2002-10-28 2006-08-22 Sandisk Corporation Tracking the least frequently erased blocks in non-volatile memory systems
US6993619B2 (en) * 2003-03-28 2006-01-31 International Business Machines Corporation Single request data transfer regardless of size and alignment
US7089394B2 (en) * 2003-04-22 2006-08-08 Intel Corporation Optimally mapping a memory device
US7188228B1 (en) 2003-10-01 2007-03-06 Sandisk Corporation Hybrid mapping implementation within a non-volatile memory system
US7559004B1 (en) 2003-10-01 2009-07-07 Sandisk Corporation Dynamic redundant area configuration in a non-volatile memory system
US7173852B2 (en) * 2003-10-03 2007-02-06 Sandisk Corporation Corrected data storage and handling methods
US7032087B1 (en) 2003-10-28 2006-04-18 Sandisk Corporation Erase count differential table within a non-volatile memory system
US8706990B2 (en) 2003-10-28 2014-04-22 Sandisk Technologies Inc. Adaptive internal table backup for non-volatile memory system
US7089349B2 (en) * 2003-10-28 2006-08-08 Sandisk Corporation Internal maintenance schedule request for non-volatile memory system
US7647355B2 (en) * 2003-10-30 2010-01-12 International Business Machines Corporation Method and apparatus for increasing efficiency of data storage in a file system
US7631138B2 (en) * 2003-12-30 2009-12-08 Sandisk Corporation Adaptive mode switching of flash memory address mapping based on host usage characteristics
US7383375B2 (en) * 2003-12-30 2008-06-03 Sandisk Corporation Data run programming
US8504798B2 (en) * 2003-12-30 2013-08-06 Sandisk Technologies Inc. Management of non-volatile memory systems having large erase blocks
US20050144363A1 (en) * 2003-12-30 2005-06-30 Sinclair Alan W. Data boundary management
US7139864B2 (en) * 2003-12-30 2006-11-21 Sandisk Corporation Non-volatile memory and method with block management system
US7433993B2 (en) * 2003-12-30 2008-10-07 San Disk Corportion Adaptive metablocks
US7725628B1 (en) 2004-04-20 2010-05-25 Lexar Media, Inc. Direct secondary device interface by a host
US7370166B1 (en) 2004-04-30 2008-05-06 Lexar Media, Inc. Secure portable storage device
US8607016B2 (en) * 2004-07-21 2013-12-10 Sandisk Technologies Inc. FAT analysis for optimized sequential cluster management
US7594063B1 (en) 2004-08-27 2009-09-22 Lexar Media, Inc. Storage capacity status
US7464306B1 (en) 2004-08-27 2008-12-09 Lexar Media, Inc. Status of overall health of nonvolatile memory
US8776049B2 (en) 2004-10-20 2014-07-08 Seagate Technology Llc Address aligned resource set allocation in a memory space
US7395404B2 (en) * 2004-12-16 2008-07-01 Sandisk Corporation Cluster auto-alignment for storing addressable data packets in a non-volatile memory array
US7366826B2 (en) * 2004-12-16 2008-04-29 Sandisk Corporation Non-volatile memory and method with multi-stream update tracking
US7386655B2 (en) * 2004-12-16 2008-06-10 Sandisk Corporation Non-volatile memory and method with improved indexing for scratch pad and update blocks
US7315916B2 (en) * 2004-12-16 2008-01-01 Sandisk Corporation Scratch pad block
US7412560B2 (en) * 2004-12-16 2008-08-12 Sandisk Corporation Non-volatile memory and method with multi-stream updating
US7631162B2 (en) 2005-10-27 2009-12-08 Sandisck Corporation Non-volatile memory with adaptive handling of data writes
US7509471B2 (en) * 2005-10-27 2009-03-24 Sandisk Corporation Methods for adaptively handling data writes in non-volatile memories
FI20060427L (fi) * 2006-05-03 2007-11-04 Tellabs Oy Menetelmä ja laitteisto peräkkäistiedoston käsittelemiseksi
US7657701B2 (en) * 2007-01-03 2010-02-02 The General Electric Company System and method of flash memory wear leveling using distributed write cycles
JP4978224B2 (ja) * 2007-02-08 2012-07-18 カシオ計算機株式会社 光電変換装置及びそれを備えた表示パネル
US20080229154A1 (en) * 2007-03-13 2008-09-18 Esteves James I Self-referencing redundancy scheme for a content addressable memory
US8713283B2 (en) * 2007-06-08 2014-04-29 Sandisk Technologies Inc. Method of interfacing a host operating through a logical address space with a direct file storage medium
US20080307156A1 (en) * 2007-06-08 2008-12-11 Sinclair Alan W System For Interfacing A Host Operating Through A Logical Address Space With A Direct File Storage Medium
US8239639B2 (en) * 2007-06-08 2012-08-07 Sandisk Technologies Inc. Method and apparatus for providing data type and host file information to a mass storage system
US8392687B2 (en) 2009-01-21 2013-03-05 Micron Technology, Inc. Solid state memory formatting
US8180995B2 (en) 2009-01-21 2012-05-15 Micron Technology, Inc. Logical address offset in response to detecting a memory formatting operation
US8612718B2 (en) * 2009-08-19 2013-12-17 Seagate Technology Llc Mapping alignment
US8996839B1 (en) 2012-01-23 2015-03-31 Western Digital Technologies, Inc. Data storage device aligning partition to boundary of sector when partition offset correlates with offset of write commands
US9063838B1 (en) * 2012-01-23 2015-06-23 Western Digital Technologies, Inc. Data storage device shifting data chunks of alignment zone relative to sector boundaries
US8910017B2 (en) 2012-07-02 2014-12-09 Sandisk Technologies Inc. Flash memory with random partition
JP2014142748A (ja) * 2013-01-23 2014-08-07 Sony Corp 記憶装置およびその制御方法
US10114562B2 (en) 2014-09-16 2018-10-30 Sandisk Technologies Llc Adaptive block allocation in nonvolatile memory
TWI560608B (en) * 2016-01-22 2016-12-01 Qisda Corp Disk access method
CN107924405B (zh) * 2016-01-29 2022-03-08 慧与发展有限责任合伙企业 用于存储数据的系统和方法、以及计算机可读介质
US9817593B1 (en) 2016-07-11 2017-11-14 Sandisk Technologies Llc Block management in non-volatile memory system with non-blocking control sync system
GB2570143B (en) * 2018-01-12 2020-04-08 Garrison Tech Ltd Secure sharing of storage resources

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2426938A1 (fr) * 1978-05-26 1979-12-21 Cii Honeywell Bull Dispositif de detection de secteurs defectueux et d'allocation de secteurs de remplacement dans une memoire a disques
JPS5764383A (en) * 1980-10-03 1982-04-19 Toshiba Corp Address converting method and its device
JPS57132256A (en) * 1981-02-09 1982-08-16 Sony Corp Memory device
JPS5877034A (ja) * 1981-10-30 1983-05-10 Hitachi Ltd 記録方法
US4450559A (en) * 1981-12-24 1984-05-22 International Business Machines Corporation Memory system with selective assignment of spare locations
JPS58215795A (ja) * 1982-06-08 1983-12-15 Toshiba Corp 不揮発性メモリ装置
JPS58215794A (ja) * 1982-06-08 1983-12-15 Toshiba Corp 不揮発性メモリ装置
US4498146A (en) * 1982-07-30 1985-02-05 At&T Bell Laboratories Management of defects in storage media
JPS5945695A (ja) * 1982-09-07 1984-03-14 Fujitsu Ltd Icメモリ
US4507731A (en) * 1982-11-01 1985-03-26 Raytheon Company Bidirectional data byte aligner
US4710871A (en) * 1982-11-01 1987-12-01 Ncr Corporation Data transmitting and receiving apparatus
AU557723B2 (en) * 1982-12-17 1987-01-08 Blue Circle Southern Cement Ltd. Electronic memory system
US4896262A (en) * 1984-02-24 1990-01-23 Kabushiki Kaisha Meidensha Emulation device for converting magnetic disc memory mode signal from computer into semiconductor memory access mode signal for semiconductor memory
JPS60212900A (ja) * 1984-04-09 1985-10-25 Nec Corp 半導体固定記憶装置
JPS6196598A (ja) * 1984-10-17 1986-05-15 Fuji Electric Co Ltd 電気的消去可能なp−romのカウントデ−タ記憶方法
US4654847A (en) * 1984-12-28 1987-03-31 International Business Machines Apparatus for automatically correcting erroneous data and for storing the corrected data in a common pool alternate memory array
JPS61208673A (ja) * 1985-03-12 1986-09-17 Matsushita Electric Ind Co Ltd 情報記録再生装置
US4744062A (en) * 1985-04-23 1988-05-10 Hitachi, Ltd. Semiconductor integrated circuit with nonvolatile memory
JPS62102482A (ja) * 1985-10-28 1987-05-12 Matsushita Electric Ind Co Ltd 情報記録再生装置
JP2664137B2 (ja) * 1985-10-29 1997-10-15 凸版印刷株式会社 Icカード
US4800520A (en) * 1985-10-29 1989-01-24 Kabushiki Kaisha Toshiba Portable electronic device with garbage collection function
US4924331A (en) * 1985-11-20 1990-05-08 Seagate Technology, Inc. Method for mapping around defective sectors in a disc drive
US4746998A (en) * 1985-11-20 1988-05-24 Seagate Technology, Inc. Method for mapping around defective sectors in a disc drive
US4757474A (en) * 1986-01-28 1988-07-12 Fujitsu Limited Semiconductor memory device having redundancy circuit portion
JP2685173B2 (ja) * 1986-05-31 1997-12-03 キヤノン株式会社 メモリ書き込み制御方法
JPH07109717B2 (ja) * 1986-05-31 1995-11-22 キヤノン株式会社 メモリ書き込み制御方法
US4953122A (en) * 1986-10-31 1990-08-28 Laserdrive Ltd. Pseudo-erasable and rewritable write-once optical disk memory system
JPS63183700A (ja) * 1987-01-26 1988-07-29 Mitsubishi Electric Corp Eepromアクセス方法
US4914529A (en) * 1988-07-18 1990-04-03 Western Digital Corp. Data disk defect handling using relocation ID fields
US5070474A (en) * 1988-07-26 1991-12-03 Disk Emulation Systems, Inc. Disk emulation system
GB8829919D0 (en) * 1988-12-22 1989-02-15 Int Computer Limited File system
DE69033438T2 (de) * 1989-04-13 2000-07-06 Sandisk Corp Austausch von fehlerhaften Speicherzellen einer EEprommatritze
US5226168A (en) * 1989-04-25 1993-07-06 Seiko Epson Corporation Semiconductor memory configured to emulate floppy and hard disk magnetic storage based upon a determined storage capacity of the semiconductor memory
US5077737A (en) * 1989-08-18 1991-12-31 Micron Technology, Inc. Method and apparatus for storing digital data in off-specification dynamic random access memory devices
US5200959A (en) * 1989-10-17 1993-04-06 Sundisk Corporation Device and method for defect handling in semi-conductor memory
US5170477A (en) * 1989-10-31 1992-12-08 Ibm Corporation Odd boundary address aligned direct memory acess device and method
US5197130A (en) * 1989-12-29 1993-03-23 Supercomputer Systems Limited Partnership Cluster architecture for a highly parallel scalar/vector multiprocessor system
US5202994A (en) * 1990-01-31 1993-04-13 Hewlett-Packard Company System and method for shadowing and re-mapping reserved memory in a microcomputer
US5303198A (en) * 1990-09-28 1994-04-12 Fuji Photo Film Co., Ltd. Method of recording data in memory card having EEPROM and memory card system using the same
DE69021732T2 (de) * 1990-12-04 1996-01-18 Hewlett Packard Ltd Wiederprogrammierbare Datenspeicherungsanlage.
GB2251324B (en) * 1990-12-31 1995-05-10 Intel Corp File structure for a non-volatile semiconductor memory
US5270979A (en) * 1991-03-15 1993-12-14 Sundisk Corporation Method for optimum erasing of EEPROM
JPH04332999A (ja) * 1991-05-07 1992-11-19 Hitachi Koki Co Ltd メモリの使用方法
JP2582487B2 (ja) * 1991-07-12 1997-02-19 インターナショナル・ビジネス・マシーンズ・コーポレイション 半導体メモリを用いた外部記憶システム及びその制御方法
US5430859A (en) * 1991-07-26 1995-07-04 Sundisk Corporation Solid state memory system including plural memory chips and a serialized bus
US5640528A (en) * 1991-10-24 1997-06-17 Intel Corporation Method and apparatus for translating addresses using mask and replacement value registers
JPH05151097A (ja) * 1991-11-28 1993-06-18 Fujitsu Ltd 書換回数制限型メモリのデータ管理方式
US5335332A (en) * 1991-12-24 1994-08-02 International Business Machines Corporation Method and system for stack memory alignment utilizing recursion
JPH05233426A (ja) * 1992-02-20 1993-09-10 Fujitsu Ltd フラッシュ・メモリ使用方法
US5341330A (en) * 1992-10-30 1994-08-23 Intel Corporation Method for writing to a flash memory array during erase suspend intervals
US5337275A (en) * 1992-10-30 1994-08-09 Intel Corporation Method for releasing space in flash EEPROM memory array to allow the storage of compressed data
US5357475A (en) * 1992-10-30 1994-10-18 Intel Corporation Method for detaching sectors in a flash EEPROM memory array
JP3641280B2 (ja) * 1992-10-30 2005-04-20 インテル・コーポレーション フラッシュeepromアレイのクリーン・アップすべきブロックを決定する方法
US5485595A (en) * 1993-03-26 1996-01-16 Cirrus Logic, Inc. Flash memory mass storage architecture incorporating wear leveling technique without using cam cells
US5479638A (en) * 1993-03-26 1995-12-26 Cirrus Logic, Inc. Flash memory mass storage architecture incorporation wear leveling technique
US5388083A (en) * 1993-03-26 1995-02-07 Cirrus Logic, Inc. Flash memory mass storage architecture
US5353256A (en) * 1993-06-30 1994-10-04 Intel Corporation Block specific status information in a memory device
US5422998A (en) * 1993-11-15 1995-06-06 Margolin; Jed Video memory with flash fill
US5555391A (en) * 1993-12-23 1996-09-10 Unisys Corporation System and method for storing partial blocks of file data in a file cache system by merging partial updated blocks with file block to be written
US5838614A (en) * 1995-07-31 1998-11-17 Lexar Microsystems, Inc. Identification and verification of a sector within a block of mass storage flash memory
US5845313A (en) * 1995-07-31 1998-12-01 Lexar Direct logical block addressing flash memory mass storage architecture
US5835935A (en) * 1995-09-13 1998-11-10 Lexar Media, Inc. Method of and architecture for controlling system data with automatic wear leveling in a semiconductor non-volatile mass storage memory

Also Published As

Publication number Publication date
EP1036364A1 (de) 2000-09-20
AU1538899A (en) 1999-06-15
EP1036364B1 (de) 2011-01-12
EP1036364A4 (de) 2004-06-23
WO1999027453A1 (en) 1999-06-03
US6125435A (en) 2000-09-26

Similar Documents

Publication Publication Date Title
DE69842097D1 (de) Ausrichtung von einer clusteradresse zu blockadressen in einem nicht-flüchtigen halbleiter-massenspeicher
FR2770328B1 (fr) Point memoire remanent
DE19880311T1 (de) Nichtflüchtige Speicherstruktur
DE69521637D1 (de) Halbleiterspeicheranordnung, die in einer einzigen Speicherzelle Multibit-Daten speichern kann
DE59804824D1 (de) Speicherzellenanordnung
DE69810096D1 (de) Nichtflüchtiger speicher
DE69830089D1 (de) Mehrpegelspeicher
DE69715532D1 (de) Speicherzuordnung in einer Mehrfachfädenumgebung
DE69420591T2 (de) Nichtflüchtige Halbleiterspeicher
DE69841414D1 (de) Speicherkarte
DE69528329D1 (de) EEPROM-Speicherzelle
DE69027348T2 (de) Speicherblockadressenermittlungsschaltkreis
DE69527594T2 (de) Flashspeicherkarte
DE69801332T2 (de) Speicherzuordnung
DE69431735D1 (de) Nichtflüchtiger Speicher
DE69614046T2 (de) Nichtflüchtige Halbleiterspeicher
DE69621985T2 (de) Speicherchiparchitektur
DE69618430T2 (de) Mikroprozessor mit pipeline-zugriffsanforderung zu einem externen speicher
DE69700328T2 (de) Ausgleich von Latenzzeit in einem Speicher
DE69530649T2 (de) Ferroelektrischer Speicher
ID23427A (id) Organisasi memori komputer
DE59712601D1 (de) Nichtflüchtige speicherzelle
DE69132402T2 (de) Zellmatrix für nichtflüchtige Halbleiter-Speichervorrichtungen
DE69316298T2 (de) Nichtflüchtige Speicherzelle
DE69817928D1 (de) Verbesserungen von Speicherschaltungen mit sequentiellem Zugriff