DE69909205D1 - Verfahren zur Herstellung vertikaler Transistoren - Google Patents

Verfahren zur Herstellung vertikaler Transistoren

Info

Publication number
DE69909205D1
DE69909205D1 DE69909205T DE69909205T DE69909205D1 DE 69909205 D1 DE69909205 D1 DE 69909205D1 DE 69909205 T DE69909205 T DE 69909205T DE 69909205 T DE69909205 T DE 69909205T DE 69909205 D1 DE69909205 D1 DE 69909205D1
Authority
DE
Germany
Prior art keywords
vertical transistors
manufacturing vertical
manufacturing
transistors
vertical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69909205T
Other languages
English (en)
Other versions
DE69909205T2 (de
Inventor
John M Hergenrother
Donald Paul Monroe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Publication of DE69909205D1 publication Critical patent/DE69909205D1/de
Application granted granted Critical
Publication of DE69909205T2 publication Critical patent/DE69909205T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors
DE69909205T 1998-08-28 1999-08-17 Verfahren zur Herstellung vertikaler Transistoren Expired - Lifetime DE69909205T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/143,274 US6027975A (en) 1998-08-28 1998-08-28 Process for fabricating vertical transistors
US143274 1998-08-28

Publications (2)

Publication Number Publication Date
DE69909205D1 true DE69909205D1 (de) 2003-08-07
DE69909205T2 DE69909205T2 (de) 2004-04-15

Family

ID=22503349

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69909205T Expired - Lifetime DE69909205T2 (de) 1998-08-28 1999-08-17 Verfahren zur Herstellung vertikaler Transistoren

Country Status (5)

Country Link
US (1) US6027975A (de)
EP (1) EP0989599B1 (de)
JP (1) JP3506965B2 (de)
KR (1) KR100572647B1 (de)
DE (1) DE69909205T2 (de)

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US6027975A (en) * 1998-08-28 2000-02-22 Lucent Technologies Inc. Process for fabricating vertical transistors
US6245623B1 (en) * 1998-11-06 2001-06-12 Advanced Micro Devices, Inc. CMOS semiconductor device containing N-channel transistor having shallow LDD junctions
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EP1063697B1 (de) * 1999-06-18 2003-03-12 Lucent Technologies Inc. Fertigungsverfahren zur Herstellung eines CMOS integrieten Schaltkreises mit vertikalen Transistoren
US6551946B1 (en) 1999-06-24 2003-04-22 Agere Systems Inc. Two-step oxidation process for oxidizing a silicon substrate wherein the first step is carried out at a temperature below the viscoelastic temperature of silicon dioxide and the second step is carried out at a temperature above the viscoelastic temperature
US6670242B1 (en) 1999-06-24 2003-12-30 Agere Systems Inc. Method for making an integrated circuit device including a graded, grown, high quality gate oxide layer and a nitride layer
US20030235957A1 (en) * 2002-06-25 2003-12-25 Samir Chaudhry Method and structure for graded gate oxides on vertical and non-planar surfaces
US6506653B1 (en) * 2000-03-13 2003-01-14 International Business Machines Corporation Method using disposable and permanent films for diffusion and implant doping
US6518622B1 (en) * 2000-03-20 2003-02-11 Agere Systems Inc. Vertical replacement gate (VRG) MOSFET with a conductive layer adjacent a source/drain region and method of manufacture therefor
US6603168B1 (en) * 2000-04-20 2003-08-05 Agere Systems Inc. Vertical DRAM device with channel access transistor and stacked storage capacitor and associated method
US6300199B1 (en) 2000-05-24 2001-10-09 Micron Technology, Inc. Method of defining at least two different field effect transistor channel lengths using differently angled sidewall segments of a channel defining layer
KR100594218B1 (ko) * 2000-05-30 2006-07-03 삼성전자주식회사 수직채널형 ｍｏｓ 트랜지스터의 채널형성 방법
FR2810792B1 (fr) * 2000-06-22 2003-07-04 Commissariat Energie Atomique Transistor mos vertical a grille enterree et procede de fabrication de celui-ci
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US6506638B1 (en) * 2000-10-12 2003-01-14 Advanced Micro Devices, Inc. Vertical double gate transistor structure
US6599789B1 (en) * 2000-11-15 2003-07-29 Micron Technology, Inc. Method of forming a field effect transistor
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US6455377B1 (en) * 2001-01-19 2002-09-24 Chartered Semiconductor Manufacturing Ltd. Method to form very high mobility vertical channel transistor by selective deposition of SiGe or multi-quantum wells (MQWs)
JP4866534B2 (ja) 2001-02-12 2012-02-01 エーエスエム アメリカ インコーポレイテッド 半導体膜の改良された堆積方法
US7026219B2 (en) * 2001-02-12 2006-04-11 Asm America, Inc. Integration of high k gate dielectric
US6706603B2 (en) * 2001-02-23 2004-03-16 Agere Systems Inc. Method of forming a semiconductor device
US6518616B2 (en) 2001-04-18 2003-02-11 International Business Machines Corporation Vertical gate top engineering for improved GC and CB process windows
US6780735B2 (en) * 2001-04-30 2004-08-24 International Business Machines Corporation Method to increase carbon and boron doping concentrations in Si and SiGe films
US6551942B2 (en) 2001-06-15 2003-04-22 International Business Machines Corporation Methods for etching tungsten stack structures
US6690040B2 (en) * 2001-09-10 2004-02-10 Agere Systems Inc. Vertical replacement-gate junction field-effect transistor
US20030052365A1 (en) * 2001-09-18 2003-03-20 Samir Chaudhry Structure and fabrication method for capacitors integratible with vertical replacement gate transistors
US6759730B2 (en) * 2001-09-18 2004-07-06 Agere Systems Inc. Bipolar junction transistor compatible with vertical replacement gate transistor
US6686604B2 (en) * 2001-09-21 2004-02-03 Agere Systems Inc. Multiple operating voltage vertical replacement-gate (VRG) transistor
US6709904B2 (en) * 2001-09-28 2004-03-23 Agere Systems Inc. Vertical replacement-gate silicon-on-insulator transistor
US6429109B1 (en) 2001-12-14 2002-08-06 Chartered Semiconductor Manufacturing Ltd Method to form high k dielectric and silicide to reduce poly depletion by using a sacrificial metal between oxide and gate
US6773994B2 (en) 2001-12-26 2004-08-10 Agere Systems Inc. CMOS vertical replacement gate (VRG) transistors
US7186630B2 (en) * 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US7071043B2 (en) * 2002-08-15 2006-07-04 Micron Technology, Inc. Methods of forming a field effect transistor having source/drain material over insulative material
US6806126B1 (en) 2002-09-06 2004-10-19 Advanced Micro Devices, Inc. Method of manufacturing a semiconductor component
US7372091B2 (en) * 2004-01-27 2008-05-13 Micron Technology, Inc. Selective epitaxy vertical integrated circuit components
US7667250B2 (en) * 2004-07-16 2010-02-23 Aptina Imaging Corporation Vertical gate device for an image sensor and method of forming the same
US7241655B2 (en) * 2004-08-30 2007-07-10 Micron Technology, Inc. Method of fabricating a vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array
JP2006310651A (ja) * 2005-04-28 2006-11-09 Toshiba Corp 半導体装置の製造方法
US20060255412A1 (en) * 2005-05-13 2006-11-16 Nirmal Ramaswamy Enhanced access devices using selective epitaxial silicon over the channel region during the formation of a semiconductor device and systems including same
US7504685B2 (en) 2005-06-28 2009-03-17 Micron Technology, Inc. Oxide epitaxial isolation
KR100675285B1 (ko) * 2005-10-10 2007-01-29 삼성전자주식회사 수직 트랜지스터를 갖는 반도체소자 및 그 제조방법
US7491995B2 (en) 2006-04-04 2009-02-17 Micron Technology, Inc. DRAM with nanofin transistors
US7923373B2 (en) 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
KR20080110366A (ko) * 2007-06-15 2008-12-18 주식회사 동부하이텍 반도체 소자의 게이트 형성 방법
KR101202158B1 (ko) * 2007-12-05 2012-11-15 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 반도체 장치
US8896056B2 (en) * 2007-12-05 2014-11-25 Unisantis Electronics Singapore Pte Ltd. Surrounding gate transistor semiconductor device
US8078063B2 (en) * 2008-02-05 2011-12-13 Finisar Corporation Monolithic power monitor and wavelength detector
KR101559868B1 (ko) 2008-02-29 2015-10-14 삼성전자주식회사 수직형 반도체 소자 및 이의 제조 방법.
KR101031476B1 (ko) 2008-07-25 2011-04-26 주식회사 하이닉스반도체 올 어라운드 게이트형 반도체 장치 및 그 제조 방법
JP4530098B1 (ja) * 2009-05-29 2010-08-25 日本ユニサンティスエレクトロニクス株式会社 半導体装置
CN102931237B (zh) * 2012-10-10 2015-07-22 哈尔滨工程大学 垂直非对称环栅mosfet器件的结构及其制造方法
CN102983171B (zh) * 2012-12-11 2015-10-28 哈尔滨工程大学 垂直无结环栅mosfet器件的结构及其制造方法
US9012278B2 (en) * 2013-10-03 2015-04-21 Asm Ip Holding B.V. Method of making a wire-based semiconductor device
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US20150380258A1 (en) * 2014-06-25 2015-12-31 Stmicroelectronics, Inc. Method for controlling height of a fin structure
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US9882047B2 (en) 2016-02-01 2018-01-30 International Business Machines Corporation Self-aligned replacement metal gate spacerless vertical field effect transistor
US9711618B1 (en) 2016-03-31 2017-07-18 International Business Machines Corporation Fabrication of vertical field effect transistor structure with controlled gate length
US9954109B2 (en) 2016-05-05 2018-04-24 International Business Machines Corporation Vertical transistor including controlled gate length and a self-aligned junction
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Also Published As

Publication number Publication date
JP2000091578A (ja) 2000-03-31
EP0989599A1 (de) 2000-03-29
DE69909205T2 (de) 2004-04-15
US6027975A (en) 2000-02-22
KR100572647B1 (ko) 2006-04-24
EP0989599B1 (de) 2003-07-02
JP3506965B2 (ja) 2004-03-15
KR20000017583A (ko) 2000-03-25

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