DE69924655D1 - Magnetische Tunnelübergangsvorrichtungen - Google Patents

Magnetische Tunnelübergangsvorrichtungen

Info

Publication number
DE69924655D1
DE69924655D1 DE69924655T DE69924655T DE69924655D1 DE 69924655 D1 DE69924655 D1 DE 69924655D1 DE 69924655 T DE69924655 T DE 69924655T DE 69924655 T DE69924655 T DE 69924655T DE 69924655 D1 DE69924655 D1 DE 69924655D1
Authority
DE
Germany
Prior art keywords
tunnel junction
magnetic tunnel
junction devices
devices
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69924655T
Other languages
English (en)
Other versions
DE69924655T2 (de
Inventor
David William Abraham
William Joseph Gallagher
Philip Louis Trouilloud
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69924655D1 publication Critical patent/DE69924655D1/de
Publication of DE69924655T2 publication Critical patent/DE69924655T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
DE69924655T 1998-02-10 1999-02-04 Magnetische Tunnelübergangsvorrichtungen Expired - Lifetime DE69924655T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US21515 1998-02-10
US09/021,515 US6104633A (en) 1998-02-10 1998-02-10 Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices

Publications (2)

Publication Number Publication Date
DE69924655D1 true DE69924655D1 (de) 2005-05-19
DE69924655T2 DE69924655T2 (de) 2006-01-19

Family

ID=21804665

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69924655T Expired - Lifetime DE69924655T2 (de) 1998-02-10 1999-02-04 Magnetische Tunnelübergangsvorrichtungen

Country Status (5)

Country Link
US (2) US6104633A (de)
EP (1) EP0936623B1 (de)
JP (1) JP3548036B2 (de)
KR (1) KR100339177B1 (de)
DE (1) DE69924655T2 (de)

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US7057253B2 (en) * 2003-06-19 2006-06-06 Infineon Technologies Ag Combination of intrinsic and shape anisotropy for reduced switching field fluctuations
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US7240275B2 (en) * 2003-08-05 2007-07-03 Hewlett-Packard Development Company, L.P. Logical data block, magnetic random access memory, memory module, computer system and method
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US6947313B2 (en) * 2003-08-27 2005-09-20 Hewlett-Packard Development Company, L.P. Method and apparatus of coupling conductors in magnetic memory
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US20050141148A1 (en) * 2003-12-02 2005-06-30 Kabushiki Kaisha Toshiba Magnetic memory
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US7072209B2 (en) * 2003-12-29 2006-07-04 Micron Technology, Inc. Magnetic memory having synthetic antiferromagnetic pinned layer
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US7099176B2 (en) * 2004-04-19 2006-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Non-orthogonal write line structure in MRAM
JP4415745B2 (ja) * 2004-04-22 2010-02-17 ソニー株式会社 固体メモリ装置
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Also Published As

Publication number Publication date
EP0936623A2 (de) 1999-08-18
KR19990072261A (ko) 1999-09-27
EP0936623A3 (de) 2000-09-20
EP0936623B1 (de) 2005-04-13
US6104633A (en) 2000-08-15
KR100339177B1 (ko) 2002-05-31
DE69924655T2 (de) 2006-01-19
JPH11273337A (ja) 1999-10-08
US6368878B1 (en) 2002-04-09
JP3548036B2 (ja) 2004-07-28

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Representative=s name: DUSCHER, R., DIPL.-PHYS. DR.RER.NAT., PAT.-ANW., 7