DE69931130D1 - Verfahren um ein dünnschicht-bauelement zu trennen - Google Patents
Verfahren um ein dünnschicht-bauelement zu trennenInfo
- Publication number
- DE69931130D1 DE69931130D1 DE69931130T DE69931130T DE69931130D1 DE 69931130 D1 DE69931130 D1 DE 69931130D1 DE 69931130 T DE69931130 T DE 69931130T DE 69931130 T DE69931130 T DE 69931130T DE 69931130 D1 DE69931130 D1 DE 69931130D1
- Authority
- DE
- Germany
- Prior art keywords
- disconnecting
- thin
- film component
- film
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/13613—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit the semiconductor element being formed on a first substrate and thereafter transferred to the final cell substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6835—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6059498 | 1998-02-25 | ||
JP6059498 | 1998-02-25 | ||
JP29621698 | 1998-10-02 | ||
JP29621698A JP3809733B2 (ja) | 1998-02-25 | 1998-10-02 | 薄膜トランジスタの剥離方法 |
PCT/JP1999/000818 WO1999044242A1 (en) | 1998-02-25 | 1999-02-23 | Method of detaching thin-film device, method of transferring thin-film device, thin-film device, active matrix substrate, and liquid crystal display |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69931130D1 true DE69931130D1 (de) | 2006-06-08 |
DE69931130T2 DE69931130T2 (de) | 2006-11-30 |
Family
ID=26401671
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69931130T Expired - Lifetime DE69931130T2 (de) | 1998-02-25 | 1999-02-23 | Verfahren um ein dünnschicht-bauelement zu trennen |
Country Status (8)
Country | Link |
---|---|
US (2) | US6700631B1 (de) |
EP (2) | EP1014452B1 (de) |
JP (1) | JP3809733B2 (de) |
KR (1) | KR100499998B1 (de) |
CN (1) | CN1160800C (de) |
DE (1) | DE69931130T2 (de) |
TW (1) | TW412774B (de) |
WO (1) | WO1999044242A1 (de) |
Families Citing this family (166)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2773261B1 (fr) | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions |
US6771895B2 (en) * | 1999-01-06 | 2004-08-03 | Mattson Technology, Inc. | Heating device for heating semiconductor wafers in thermal processing chambers |
JP3447619B2 (ja) * | 1999-06-25 | 2003-09-16 | 株式会社東芝 | アクティブマトリクス基板の製造方法、中間転写基板 |
US6700185B1 (en) * | 1999-11-10 | 2004-03-02 | Hitachi Chemical Co., Ltd. | Adhesive film for semiconductor, lead frame and semiconductor device using the same, and method for manufacturing semiconductor device |
KR100690001B1 (ko) * | 2000-02-21 | 2007-03-08 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 및 그 제조방법 |
JP2003531492A (ja) * | 2000-04-14 | 2003-10-21 | エス オー イ テク シリコン オン インシュレータ テクノロジース | 特に半導体材料製の基板又はインゴットから少なくとも一枚の薄層を切り出す方法 |
FR2817395B1 (fr) * | 2000-11-27 | 2003-10-31 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede |
GB0029312D0 (en) | 2000-12-01 | 2001-01-17 | Philips Corp Intellectual Pty | Flexible electronic device |
JP3941401B2 (ja) * | 2001-01-15 | 2007-07-04 | セイコーエプソン株式会社 | 液晶装置の製造方法 |
FR2821697B1 (fr) * | 2001-03-02 | 2004-06-25 | Commissariat Energie Atomique | Procede de fabrication de couches minces sur un support specifique et une application |
FR2823596B1 (fr) | 2001-04-13 | 2004-08-20 | Commissariat Energie Atomique | Substrat ou structure demontable et procede de realisation |
TW574753B (en) | 2001-04-13 | 2004-02-01 | Sony Corp | Manufacturing method of thin film apparatus and semiconductor device |
US7211828B2 (en) | 2001-06-20 | 2007-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic apparatus |
TW548860B (en) * | 2001-06-20 | 2003-08-21 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
JP4244120B2 (ja) * | 2001-06-20 | 2009-03-25 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
TW564471B (en) * | 2001-07-16 | 2003-12-01 | Semiconductor Energy Lab | Semiconductor device and peeling off method and method of manufacturing semiconductor device |
TW586231B (en) | 2001-07-24 | 2004-05-01 | Seiko Epson Corp | Transfer method, methods of manufacturing thin film devices and integrated circuits, circuit board and manufacturing method thereof, electro-optical apparatus and manufacturing method thereof, manufacturing methods of IC card and electronic appliance |
US6814832B2 (en) | 2001-07-24 | 2004-11-09 | Seiko Epson Corporation | Method for transferring element, method for producing element, integrated circuit, circuit board, electro-optical device, IC card, and electronic appliance |
JP5057619B2 (ja) * | 2001-08-01 | 2012-10-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
TW554398B (en) * | 2001-08-10 | 2003-09-21 | Semiconductor Energy Lab | Method of peeling off and method of manufacturing semiconductor device |
TW558743B (en) | 2001-08-22 | 2003-10-21 | Semiconductor Energy Lab | Peeling method and method of manufacturing semiconductor device |
FR2830983B1 (fr) | 2001-10-11 | 2004-05-14 | Commissariat Energie Atomique | Procede de fabrication de couches minces contenant des microcomposants |
KR100944886B1 (ko) | 2001-10-30 | 2010-03-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제조 방법 |
TWI264121B (en) | 2001-11-30 | 2006-10-11 | Semiconductor Energy Lab | A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device |
JP4567941B2 (ja) * | 2001-12-28 | 2010-10-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法及び表示装置の作製方法 |
US6953735B2 (en) | 2001-12-28 | 2005-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating a semiconductor device by transferring a layer to a support with curvature |
JP3858728B2 (ja) | 2002-03-04 | 2006-12-20 | セイコーエプソン株式会社 | 静電容量検出装置 |
JP4410456B2 (ja) * | 2002-04-24 | 2010-02-03 | 株式会社リコー | 薄膜デバイス装置の製造方法、およびアクティブマトリクス基板の製造方法 |
EP1363319B1 (de) | 2002-05-17 | 2009-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Verfahren zum Transferieren eines Objekts und Verfahren zur Herstellung eines Halbleiterbauelements |
EP1369933A3 (de) * | 2002-06-07 | 2008-05-28 | FUJIFILM Corporation | Herstelleungsverfahren von Dünnschichten |
JP3838637B2 (ja) * | 2002-06-10 | 2006-10-25 | 日東電工株式会社 | ガラス基板ダイシング用粘着シートおよびガラス基板ダイシング方法 |
JP4366921B2 (ja) | 2002-07-12 | 2009-11-18 | セイコーエプソン株式会社 | 本人照合装置、カード型情報記録媒体及びそれを用いた情報処理システム |
CN100391004C (zh) | 2002-10-30 | 2008-05-28 | 株式会社半导体能源研究所 | 半导体装置以及半导体装置的制作方法 |
US7176108B2 (en) | 2002-11-07 | 2007-02-13 | Soitec Silicon On Insulator | Method of detaching a thin film at moderate temperature after co-implantation |
JP2004173841A (ja) * | 2002-11-26 | 2004-06-24 | Seiko Epson Corp | 本人照合装置、カード型情報記録媒体及びそれを用いた情報処理システム |
US7056810B2 (en) | 2002-12-18 | 2006-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance |
JP4283656B2 (ja) * | 2002-12-18 | 2009-06-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、半導体装置及び電子機器 |
JP4373085B2 (ja) * | 2002-12-27 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、剥離方法及び転写方法 |
EP1434264A3 (de) * | 2002-12-27 | 2017-01-18 | Semiconductor Energy Laboratory Co., Ltd. | Halbleiteranordnung und Herstellungsverfahren unter Verwendung der Transfertechnik |
TWI330269B (en) | 2002-12-27 | 2010-09-11 | Semiconductor Energy Lab | Separating method |
AU2003289448A1 (en) * | 2003-01-08 | 2004-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its fabricating method |
AU2003292609A1 (en) * | 2003-01-15 | 2004-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Separating method and method for manufacturing display device using the separating method |
FR2850390B1 (fr) * | 2003-01-24 | 2006-07-14 | Soitec Silicon On Insulator | Procede d'elimination d'une zone peripherique de colle lors de la fabrication d'un substrat composite |
JP4389447B2 (ja) * | 2003-01-28 | 2009-12-24 | セイコーエプソン株式会社 | 電気光学装置の製造方法 |
US6759277B1 (en) * | 2003-02-27 | 2004-07-06 | Sharp Laboratories Of America, Inc. | Crystalline silicon die array and method for assembling crystalline silicon sheets onto substrates |
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US5391257A (en) | 1993-12-10 | 1995-02-21 | Rockwell International Corporation | Method of transferring a thin film to an alternate substrate |
US5409124A (en) * | 1993-12-23 | 1995-04-25 | Kraft Foods, Inc. | Beverage container with bottom cavity |
FR2715501B1 (fr) | 1994-01-26 | 1996-04-05 | Commissariat Energie Atomique | Procédé de dépôt de lames semiconductrices sur un support. |
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JPH08107088A (ja) * | 1994-10-04 | 1996-04-23 | Fujitsu Ltd | 半導体装置の製造方法 |
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-
1998
- 1998-10-02 JP JP29621698A patent/JP3809733B2/ja not_active Expired - Fee Related
-
1999
- 1999-02-23 US US09/403,319 patent/US6700631B1/en not_active Expired - Lifetime
- 1999-02-23 KR KR10-1999-7009538A patent/KR100499998B1/ko not_active IP Right Cessation
- 1999-02-23 CN CNB998001732A patent/CN1160800C/zh not_active Expired - Lifetime
- 1999-02-23 WO PCT/JP1999/000818 patent/WO1999044242A1/ja active IP Right Grant
- 1999-02-23 EP EP99903936A patent/EP1014452B1/de not_active Expired - Lifetime
- 1999-02-23 EP EP06075540A patent/EP1686626A3/de not_active Withdrawn
- 1999-02-23 DE DE69931130T patent/DE69931130T2/de not_active Expired - Lifetime
- 1999-02-24 TW TW088102793A patent/TW412774B/zh not_active IP Right Cessation
-
2002
- 2002-09-06 US US10/235,935 patent/US6885389B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1686626A2 (de) | 2006-08-02 |
US20030008437A1 (en) | 2003-01-09 |
KR100499998B1 (ko) | 2005-07-07 |
TW412774B (en) | 2000-11-21 |
CN1256794A (zh) | 2000-06-14 |
JP3809733B2 (ja) | 2006-08-16 |
WO1999044242A1 (en) | 1999-09-02 |
DE69931130T2 (de) | 2006-11-30 |
EP1014452A4 (de) | 2001-11-14 |
EP1686626A3 (de) | 2008-06-04 |
EP1014452B1 (de) | 2006-05-03 |
KR20010006448A (ko) | 2001-01-26 |
EP1014452A1 (de) | 2000-06-28 |
US6885389B2 (en) | 2005-04-26 |
US6700631B1 (en) | 2004-03-02 |
JPH11312811A (ja) | 1999-11-09 |
CN1160800C (zh) | 2004-08-04 |
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