DE69932995D1 - Lichtempfindliche Harzzusammensetzung - Google Patents

Lichtempfindliche Harzzusammensetzung

Info

Publication number
DE69932995D1
DE69932995D1 DE69932995T DE69932995T DE69932995D1 DE 69932995 D1 DE69932995 D1 DE 69932995D1 DE 69932995 T DE69932995 T DE 69932995T DE 69932995 T DE69932995 T DE 69932995T DE 69932995 D1 DE69932995 D1 DE 69932995D1
Authority
DE
Germany
Prior art keywords
resin composition
photosensitive resin
photosensitive
composition
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69932995T
Other languages
English (en)
Other versions
DE69932995T2 (de
Inventor
Eiichi Kobayashi
Yukio Nishimura
Takeo Shioya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Application granted granted Critical
Publication of DE69932995D1 publication Critical patent/DE69932995D1/de
Publication of DE69932995T2 publication Critical patent/DE69932995T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic
DE69932995T 1998-11-10 1999-11-09 Lichtempfindliche Harzzusammensetzung Expired - Lifetime DE69932995T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP31855998 1998-11-10
JP31855998A JP3941268B2 (ja) 1998-11-10 1998-11-10 感放射線性樹脂組成物

Publications (2)

Publication Number Publication Date
DE69932995D1 true DE69932995D1 (de) 2006-10-12
DE69932995T2 DE69932995T2 (de) 2007-03-15

Family

ID=18100492

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69932995T Expired - Lifetime DE69932995T2 (de) 1998-11-10 1999-11-09 Lichtempfindliche Harzzusammensetzung

Country Status (4)

Country Link
US (1) US6337171B1 (de)
EP (1) EP1011029B1 (de)
JP (1) JP3941268B2 (de)
DE (1) DE69932995T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4838437B2 (ja) * 2000-06-16 2011-12-14 Ｊｓｒ株式会社 感放射線性樹脂組成物
US6630282B2 (en) 2000-08-21 2003-10-07 Tokyo Ohka Kogyo Co., Ltd. Crosslinked positive-working photoresist composition
JP4694686B2 (ja) * 2000-08-31 2011-06-08 東京応化工業株式会社 半導体素子製造方法
KR100760146B1 (ko) * 2000-09-18 2007-09-18 제이에스알 가부시끼가이샤 감방사선성 수지 조성물
JP4438218B2 (ja) * 2000-11-16 2010-03-24 Ｊｓｒ株式会社 感放射線性樹脂組成物
US6838225B2 (en) 2001-01-18 2005-01-04 Jsr Corporation Radiation-sensitive resin composition
US7531286B2 (en) * 2002-03-15 2009-05-12 Jsr Corporation Radiation-sensitive resin composition
JP4048824B2 (ja) * 2002-05-09 2008-02-20 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4168095B2 (ja) * 2002-05-24 2008-10-22 サンノプコ株式会社 感光性樹脂組成物
TWI314943B (en) * 2002-08-29 2009-09-21 Radiation-sensitive resin composition
JP3937996B2 (ja) * 2002-10-08 2007-06-27 Ｊｓｒ株式会社 感放射性樹脂組成物
JP4140506B2 (ja) * 2003-10-28 2008-08-27 Ｊｓｒ株式会社 感放射線性樹脂組成物
US20080213699A1 (en) * 2004-12-17 2008-09-04 Samsung Electronics Co., Ltd. Photoresist composition and method of forming a photoresist pattern using the photoresist composition
KR20060068798A (ko) * 2004-12-17 2006-06-21 삼성전자주식회사 감광성 폴리머, 이를 포함하는 포토레지스트 조성물 및이를 이용한 포토레지스트 패턴 형성 방법
JP2007092018A (ja) * 2005-02-21 2007-04-12 Jsr Corp フェノール性水酸基を有する共重合体および感放射線性樹脂組成物
US20060188812A1 (en) * 2005-02-21 2006-08-24 Tomoki Nagai Phenolic hydroxyl group-containing copolymer and radiation-sensitive resin composition
JP4536546B2 (ja) * 2005-02-21 2010-09-01 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
JP4715671B2 (ja) * 2005-08-03 2011-07-06 Ｊｓｒ株式会社 メッキ造形物製造用ポジ型感放射線性樹脂組成物、転写フィルムおよびメッキ造形物の製造方法
US20070031758A1 (en) 2005-08-03 2007-02-08 Jsr Corporation Positive-type radiation-sensitive resin composition for producing a metal-plating formed material, transcription film and production method of a metal-plating formed material
JP5062996B2 (ja) * 2005-09-20 2012-10-31 富士フイルム株式会社 ジアリールヨードニウム塩の製造方法及びジアリールヨードニウム塩
WO2018168258A1 (ja) 2017-03-17 2018-09-20 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び電子デバイスの製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06123970A (ja) 1992-10-12 1994-05-06 Shin Etsu Chem Co Ltd ポジ型レジスト材料
US5374500A (en) 1993-04-02 1994-12-20 International Business Machines Corporation Positive photoresist composition containing photoacid generator and use thereof
JP2936956B2 (ja) 1993-04-15 1999-08-23 信越化学工業株式会社 レジスト材料
KR100233367B1 (ko) * 1993-04-15 1999-12-01 카나가와 치히로 레지스트 재료
WO1995016671A1 (en) 1993-12-16 1995-06-22 The Children's Medical Center Corporation Triflate-mediated preparation and use of iodonium compounds
DE69508812T2 (de) * 1994-01-28 1999-11-04 Shinetsu Chemical Co Sulfoniumsalz und chemisch verstärkte Positivresistzusammensetzungen
JP3271728B2 (ja) 1994-02-14 2002-04-08 日本電信電話株式会社 ポジ型レジスト組成物
EP0675410B1 (de) * 1994-03-28 1999-08-04 Wako Pure Chemical Industries Ltd Resistzusammensetzung für tiefe Ultraviolettbelichtung
JP3591549B2 (ja) 1995-11-02 2004-11-24 信越化学工業株式会社 新規ヨ−ドニウム塩及び化学増幅ポジ型レジスト材料
TW436663B (en) * 1995-11-02 2001-05-28 Shinetsu Chemical Co Sulfonium salts and chemically amplified positive resist compositions
US5585220A (en) 1995-12-01 1996-12-17 International Business Machines Corporation Resist composition with radiation sensitive acid generator
KR0185318B1 (ko) * 1996-12-28 1999-04-01 김흥기 양성 포토레지스트 제조용 공중합체 및 이를 함유하는 화학증폭형 양성 포토레지스트 조성물
US6066433A (en) * 1997-03-10 2000-05-23 Shin-Etsu Chemical Co., Ltd. High molecular weight silicone compounds, chemically amplified positive resist compositions, and patterning method
TWI250379B (en) 1998-08-07 2006-03-01 Az Electronic Materials Japan Chemical amplified radiation-sensitive composition which contains onium salt and generator

Also Published As

Publication number Publication date
EP1011029B1 (de) 2006-08-30
JP2000147772A (ja) 2000-05-26
DE69932995T2 (de) 2007-03-15
JP3941268B2 (ja) 2007-07-04
US6337171B1 (en) 2002-01-08
EP1011029A3 (de) 2001-01-17
EP1011029A2 (de) 2000-06-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition