DE69934620D1 - Methode zur Herstellung eines Halbleiterbeschleunigungsensors - Google Patents

Methode zur Herstellung eines Halbleiterbeschleunigungsensors

Info

Publication number
DE69934620D1
DE69934620D1 DE69934620T DE69934620T DE69934620D1 DE 69934620 D1 DE69934620 D1 DE 69934620D1 DE 69934620 T DE69934620 T DE 69934620T DE 69934620 T DE69934620 T DE 69934620T DE 69934620 D1 DE69934620 D1 DE 69934620D1
Authority
DE
Germany
Prior art keywords
manufacturing
acceleration sensor
semiconductor acceleration
semiconductor
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69934620T
Other languages
English (en)
Other versions
DE69934620T2 (de
Inventor
Tadao Matsunaga
Takashi Kunimi
Masahiro Nezu
Masatomo Mori
Masayoshi Esashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Akebono Brake Industry Co Ltd
Original Assignee
Akebono Brake Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Akebono Brake Industry Co Ltd filed Critical Akebono Brake Industry Co Ltd
Application granted granted Critical
Publication of DE69934620D1 publication Critical patent/DE69934620D1/de
Publication of DE69934620T2 publication Critical patent/DE69934620T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802Details
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0828Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
DE69934620T 1998-03-16 1999-03-11 Methode zur Herstellung eines Halbleiterbeschleunigungsensors Expired - Lifetime DE69934620T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10065694A JPH11258265A (ja) 1998-03-16 1998-03-16 半導体加速度センサ及びその製造方法
JP6569498 1998-03-16

Publications (2)

Publication Number Publication Date
DE69934620D1 true DE69934620D1 (de) 2007-02-15
DE69934620T2 DE69934620T2 (de) 2007-05-03

Family

ID=13294388

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69934620T Expired - Lifetime DE69934620T2 (de) 1998-03-16 1999-03-11 Methode zur Herstellung eines Halbleiterbeschleunigungsensors

Country Status (4)

Country Link
US (1) US6153917A (de)
EP (1) EP0943923B1 (de)
JP (1) JPH11258265A (de)
DE (1) DE69934620T2 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69925837T2 (de) * 1999-10-29 2005-10-27 Sensonor Asa Mikromechanischer Sensor
DE10053307B4 (de) * 2000-10-27 2008-06-26 Eads Deutschland Gmbh Kapsel für Mikrosensoren, Verfahren zur Verkapselung von Mikrosensoren und Kapselelement
EP1223665B1 (de) * 2001-01-10 2014-04-16 Texas Instruments Incorporated Verbesserungen in oder in Bezug auf Micromaschinen
JP4238724B2 (ja) 2003-03-27 2009-03-18 株式会社デンソー 半導体装置
US7247246B2 (en) * 2003-10-20 2007-07-24 Atmel Corporation Vertical integration of a MEMS structure with electronics in a hermetically sealed cavity
US7104129B2 (en) * 2004-02-02 2006-09-12 Invensense Inc. Vertically integrated MEMS structure with electronics in a hermetically sealed cavity
US7115182B2 (en) * 2004-06-15 2006-10-03 Agency For Science, Technology And Research Anodic bonding process for ceramics
CN1318851C (zh) * 2004-06-22 2007-05-30 中国电子科技集团公司第十三研究所 硅玻璃键合的栅型高冲击加速度计
JP2006226743A (ja) * 2005-02-16 2006-08-31 Mitsubishi Electric Corp 加速度センサ
US7442570B2 (en) 2005-03-18 2008-10-28 Invensence Inc. Method of fabrication of a AL/GE bonding in a wafer packaging environment and a product produced therefrom
JP2007102085A (ja) * 2005-10-07 2007-04-19 Canon Inc 現像剤量検知方法及び画像形成装置
US20090282917A1 (en) * 2008-05-19 2009-11-19 Cenk Acar Integrated multi-axis micromachined inertial sensing unit and method of fabrication
JP5316479B2 (ja) * 2009-06-09 2013-10-16 株式会社デンソー 半導体力学量センサの製造方法及び半導体力学量センサ
US9097524B2 (en) 2009-09-11 2015-08-04 Invensense, Inc. MEMS device with improved spring system
US8534127B2 (en) 2009-09-11 2013-09-17 Invensense, Inc. Extension-mode angular velocity sensor
US8567246B2 (en) 2010-10-12 2013-10-29 Invensense, Inc. Integrated MEMS device and method of use
US8860409B2 (en) 2011-01-11 2014-10-14 Invensense, Inc. Micromachined resonant magnetic field sensors
US8947081B2 (en) 2011-01-11 2015-02-03 Invensense, Inc. Micromachined resonant magnetic field sensors
US9664750B2 (en) 2011-01-11 2017-05-30 Invensense, Inc. In-plane sensing Lorentz force magnetometer
CN102156203B (zh) 2011-03-15 2013-07-24 迈尔森电子(天津)有限公司 Mems惯性传感器及其形成方法
EP2514713B1 (de) 2011-04-20 2013-10-02 Tronics Microsystems S.A. Mikroelektromechanische Systemvorrichtung (MEMS-Vorrichtung)
JP2013007653A (ja) * 2011-06-24 2013-01-10 Nippon Dempa Kogyo Co Ltd 外力検出装置及び外力検出センサー
JP6140919B2 (ja) 2011-09-30 2017-06-07 曙ブレーキ工業株式会社 加速度センサ回路
US9134337B2 (en) * 2012-12-17 2015-09-15 Maxim Integrated Products, Inc. Microelectromechanical z-axis out-of-plane stopper
ITTO20130931A1 (it) * 2013-11-15 2015-05-16 St Microelectronics Srl Sensore di forza microelettromeccanico di tipo capacitivo e relativo metodo di rilevamento di forza
US9162868B2 (en) 2013-11-27 2015-10-20 Infineon Technologies Ag MEMS device
US9991868B1 (en) 2014-04-14 2018-06-05 Hrl Laboratories, Llc Micro-resonator having lid-integrated electrode
WO2016130722A1 (en) 2015-02-11 2016-08-18 Invensense, Inc. 3D INTEGRATION USING Al-Ge EUTECTIC BOND INTERCONNECT
EP3147258A1 (de) * 2015-09-22 2017-03-29 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Verbindungspaneel für elektronische bauelemente
CN105182005B (zh) * 2015-10-15 2018-02-27 华东光电集成器件研究所 一种加速度计
CN105137121B (zh) * 2015-10-15 2018-02-27 华东光电集成器件研究所 一种低应力加速度计的制备方法
US10192850B1 (en) 2016-09-19 2019-01-29 Sitime Corporation Bonding process with inhibited oxide formation

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3634727A (en) * 1968-12-03 1972-01-11 Bendix Corp Capacitance-type pressure transducer
US5343064A (en) * 1988-03-18 1994-08-30 Spangler Leland J Fully integrated single-crystal silicon-on-insulator process, sensors and circuits
JPH0672899B2 (ja) * 1988-04-01 1994-09-14 株式会社日立製作所 加速度センサ
JPH0623782B2 (ja) * 1988-11-15 1994-03-30 株式会社日立製作所 静電容量式加速度センサ及び半導体圧力センサ
US4996627A (en) * 1989-01-30 1991-02-26 Dresser Industries, Inc. High sensitivity miniature pressure transducer
DE4133897C2 (de) * 1991-10-10 2002-08-29 Siemens Ag Verfahren zum Verbinden von zwei Platten
JP2804196B2 (ja) * 1991-10-18 1998-09-24 株式会社日立製作所 マイクロセンサ及びそれを用いた制御システム
FR2687777B1 (fr) * 1992-02-20 1994-05-20 Sextant Avionique Micro-capteur capacitif a faible capacite parasite et procede de fabrication.
JPH0682474A (ja) * 1992-09-01 1994-03-22 Hitachi Ltd 半導体容量式加速度センサ
JPH07191055A (ja) * 1993-12-27 1995-07-28 Hitachi Ltd 静電容量式加速度センサ
JPH08279444A (ja) * 1995-04-07 1996-10-22 Nec Corp 微小構造体およびその製造方法

Also Published As

Publication number Publication date
DE69934620T2 (de) 2007-05-03
JPH11258265A (ja) 1999-09-24
EP0943923A1 (de) 1999-09-22
EP0943923B1 (de) 2007-01-03
US6153917A (en) 2000-11-28

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