DE69936839D1 - Laterales dünnfilm-silizium-auf-isolator-(soi)-jfet-bauelement - Google Patents
Laterales dünnfilm-silizium-auf-isolator-(soi)-jfet-bauelementInfo
- Publication number
- DE69936839D1 DE69936839D1 DE69936839T DE69936839T DE69936839D1 DE 69936839 D1 DE69936839 D1 DE 69936839D1 DE 69936839 T DE69936839 T DE 69936839T DE 69936839 T DE69936839 T DE 69936839T DE 69936839 D1 DE69936839 D1 DE 69936839D1
- Authority
- DE
- Germany
- Prior art keywords
- soi
- insulator
- thin film
- film silicon
- lateral thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000012212 insulator Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8086—Thin film JFET's
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US211149 | 1998-12-14 | ||
| US09/211,149 US5973341A (en) | 1998-12-14 | 1998-12-14 | Lateral thin-film silicon-on-insulator (SOI) JFET device |
| PCT/EP1999/009178 WO2000036655A1 (en) | 1998-12-14 | 1999-11-24 | Lateral thin-film silicon-on-insulator (soi) jfet device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69936839D1 true DE69936839D1 (de) | 2007-09-27 |
| DE69936839T2 DE69936839T2 (de) | 2008-05-21 |
Family
ID=22785757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69936839T Expired - Lifetime DE69936839T2 (de) | 1998-12-14 | 1999-11-24 | Laterales dünnfilm-silizium-auf-isolator-(soi)-jfet-bauelement |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5973341A (de) |
| EP (1) | EP1053567B1 (de) |
| JP (1) | JP2002532905A (de) |
| KR (1) | KR100652449B1 (de) |
| DE (1) | DE69936839T2 (de) |
| TW (1) | TW478155B (de) |
| WO (1) | WO2000036655A1 (de) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6310378B1 (en) * | 1997-12-24 | 2001-10-30 | Philips Electronics North American Corporation | High voltage thin film transistor with improved on-state characteristics and method for making same |
| US6346451B1 (en) * | 1997-12-24 | 2002-02-12 | Philips Electronics North America Corporation | Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode |
| US6313489B1 (en) * | 1999-11-16 | 2001-11-06 | Philips Electronics North America Corporation | Lateral thin-film silicon-on-insulator (SOI) device having a lateral drift region with a retrograde doping profile, and method of making such a device |
| WO2001047030A1 (en) * | 1999-12-20 | 2001-06-28 | Koninklijke Philips Electronics N.V. | Depletion type mos transistor |
| FR2818013B1 (fr) * | 2000-12-13 | 2003-10-17 | St Microelectronics Sa | Transistor a effet de champ a jonction destine a former un limiteur de courant |
| AU2002339604A1 (en) * | 2001-11-01 | 2003-05-12 | Koninklijke Philips Electronics N.V. | Lateral soi field-effect transistor and method of making the same |
| US6627958B2 (en) * | 2001-12-10 | 2003-09-30 | Koninklijke Philips Electronics N.V. | Lateral high voltage semiconductor device having a sense terminal and method for sensing a drain voltage of the same |
| US6847081B2 (en) * | 2001-12-10 | 2005-01-25 | Koninklijke Philips Electronics N.V. | Dual gate oxide high-voltage semiconductor device |
| EP1408552A1 (de) * | 2002-10-09 | 2004-04-14 | STMicroelectronics S.r.l. | Integriertes MOS-Halbleiterbauelement mit grosser Leistungsfähigkeit und Verfahren zu seiner Herstellung |
| JP2007506287A (ja) * | 2003-09-22 | 2007-03-15 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 電界効果型半導体装置における容量素子の動的制御 |
| US7550783B2 (en) * | 2004-05-11 | 2009-06-23 | Cree, Inc. | Wide bandgap HEMTs with source connected field plates |
| US7312481B2 (en) * | 2004-10-01 | 2007-12-25 | Texas Instruments Incorporated | Reliable high-voltage junction field effect transistor and method of manufacture therefor |
| KR20070116710A (ko) | 2005-03-03 | 2007-12-11 | 알러간, 인코포레이티드 | 보툴리눔 독소를 정제하기 위한 동물 산물이 없는 시스템및 프로세스 |
| US7592841B2 (en) * | 2006-05-11 | 2009-09-22 | Dsm Solutions, Inc. | Circuit configurations having four terminal JFET devices |
| US7888768B2 (en) * | 2006-01-09 | 2011-02-15 | Fairchild Korea Semiconductor, Ltd. | Power integrated circuit device having embedded high-side power switch |
| JP4989085B2 (ja) * | 2006-02-24 | 2012-08-01 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置及びその製造方法 |
| JP5307973B2 (ja) * | 2006-02-24 | 2013-10-02 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
| US7764137B2 (en) * | 2006-09-28 | 2010-07-27 | Suvolta, Inc. | Circuit and method for generating electrical solutions with junction field effect transistors |
| US7525163B2 (en) * | 2006-10-31 | 2009-04-28 | Dsm Solutions, Inc. | Semiconductor device, design method and structure |
| US20080099796A1 (en) * | 2006-11-01 | 2008-05-01 | Vora Madhukar B | Device with patterned semiconductor electrode structure and method of manufacture |
| US20080237657A1 (en) * | 2007-03-26 | 2008-10-02 | Dsm Solution, Inc. | Signaling circuit and method for integrated circuit devices and systems |
| US20080265936A1 (en) * | 2007-04-27 | 2008-10-30 | Dsm Solutions, Inc. | Integrated circuit switching device, structure and method of manufacture |
| US7727821B2 (en) * | 2007-05-01 | 2010-06-01 | Suvolta, Inc. | Image sensing cell, device, method of operation, and method of manufacture |
| US7692220B2 (en) * | 2007-05-01 | 2010-04-06 | Suvolta, Inc. | Semiconductor device storage cell structure, method of operation, and method of manufacture |
| US7629812B2 (en) * | 2007-08-03 | 2009-12-08 | Dsm Solutions, Inc. | Switching circuits and methods for programmable logic devices |
| US8035139B2 (en) * | 2007-09-02 | 2011-10-11 | Suvolta, Inc. | Dynamic random access memory having junction field effect transistor cell access device |
| US20090168508A1 (en) * | 2007-12-31 | 2009-07-02 | Dsm Solutions, Inc. | Static random access memory having cells with junction field effect and bipolar junction transistors |
| US7710148B2 (en) * | 2008-06-02 | 2010-05-04 | Suvolta, Inc. | Programmable switch circuit and method, method of manufacture, and devices and systems including the same |
| US7943971B1 (en) | 2008-12-17 | 2011-05-17 | Suvolta, Inc. | Junction field effect transistor (JFET) structure having top-to-bottom gate tie and method of manufacture |
| US9023896B2 (en) | 2009-05-04 | 2015-05-05 | Psivida Us, Inc. | Porous silicon drug-eluting particles |
| US9520486B2 (en) | 2009-11-04 | 2016-12-13 | Analog Devices, Inc. | Electrostatic protection device |
| US10199482B2 (en) | 2010-11-29 | 2019-02-05 | Analog Devices, Inc. | Apparatus for electrostatic discharge protection |
| CN102646701B (zh) * | 2012-05-04 | 2015-09-02 | 上海先进半导体制造股份有限公司 | 一种jfet器件及其形成方法 |
| CN103390646B (zh) * | 2012-05-09 | 2016-06-08 | 旺宏电子股份有限公司 | 半导体元件及其制造方法 |
| US9190535B2 (en) | 2012-05-25 | 2015-11-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bootstrap MOS for high voltage applications |
| US8704279B2 (en) | 2012-05-25 | 2014-04-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Embedded JFETs for high voltage applications |
| US10181719B2 (en) | 2015-03-16 | 2019-01-15 | Analog Devices Global | Overvoltage blocking protection device |
| US10199369B2 (en) | 2016-03-04 | 2019-02-05 | Analog Devices, Inc. | Apparatus and methods for actively-controlled transient overstress protection with false condition shutdown |
| US10177566B2 (en) | 2016-06-21 | 2019-01-08 | Analog Devices, Inc. | Apparatus and methods for actively-controlled trigger and latch release thyristor |
| US10734806B2 (en) | 2016-07-21 | 2020-08-04 | Analog Devices, Inc. | High voltage clamps with transient activation and activation release control |
| US10861845B2 (en) | 2016-12-06 | 2020-12-08 | Analog Devices, Inc. | Active interface resistance modulation switch |
| US11387648B2 (en) | 2019-01-10 | 2022-07-12 | Analog Devices International Unlimited Company | Electrical overstress protection with low leakage current for high voltage tolerant high speed interfaces |
| CN111128727B (zh) * | 2019-12-10 | 2023-08-18 | 上海华虹宏力半导体制造有限公司 | Jfet器件的制造方法、jfet器件及其版图结构 |
| US11557662B2 (en) | 2020-11-02 | 2023-01-17 | Texas Instruments Incorporated | Junction field effect transistor on silicon-on-insulator substrate |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4611220A (en) * | 1983-11-16 | 1986-09-09 | General Motors Corporation | Junction-MOS power field effect transistor |
| US4914491A (en) * | 1987-11-13 | 1990-04-03 | Kopin Corporation | Junction field-effect transistors formed on insulator substrates |
| FR2663464B1 (fr) * | 1990-06-19 | 1992-09-11 | Commissariat Energie Atomique | Circuit integre en technologie silicium sur isolant comportant un transistor a effet de champ et son procede de fabrication. |
| EP0497427B1 (de) * | 1991-02-01 | 1996-04-10 | Koninklijke Philips Electronics N.V. | Halbleiteranordnung für Hochspannungsverwendung und Verfahren zur Herstellung |
| US5246870A (en) * | 1991-02-01 | 1993-09-21 | North American Philips Corporation | Method for making an improved high voltage thin film transistor having a linear doping profile |
| SE500815C2 (sv) * | 1993-01-25 | 1994-09-12 | Ericsson Telefon Ab L M | Dielektriskt isolerad halvledaranordning och förfarande för dess framställning |
| US5373183A (en) * | 1993-04-28 | 1994-12-13 | Harris Corporation | Integrated circuit with improved reverse bias breakdown |
| US5889298A (en) * | 1993-04-30 | 1999-03-30 | Texas Instruments Incorporated | Vertical JFET field effect transistor |
| US5420457A (en) * | 1993-11-12 | 1995-05-30 | At&T Corp. | Lateral high-voltage PNP transistor |
| DE4425337C2 (de) * | 1994-07-18 | 1997-08-14 | Siemens Ag | Schaltungsstruktur mit mindestens einem feldeffektgesteuerten Bauelement und Verfahren zu deren Herstellung |
| US5710451A (en) * | 1996-04-10 | 1998-01-20 | Philips Electronics North America Corporation | High-voltage lateral MOSFET SOI device having a semiconductor linkup region |
-
1998
- 1998-12-14 US US09/211,149 patent/US5973341A/en not_active Expired - Lifetime
-
1999
- 1999-11-24 KR KR1020007008873A patent/KR100652449B1/ko not_active IP Right Cessation
- 1999-11-24 DE DE69936839T patent/DE69936839T2/de not_active Expired - Lifetime
- 1999-11-24 WO PCT/EP1999/009178 patent/WO2000036655A1/en active IP Right Grant
- 1999-11-24 JP JP2000588812A patent/JP2002532905A/ja not_active Withdrawn
- 1999-11-24 EP EP99973439A patent/EP1053567B1/de not_active Expired - Lifetime
-
2000
- 2000-02-02 TW TW089101817A patent/TW478155B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010040950A (ko) | 2001-05-15 |
| TW478155B (en) | 2002-03-01 |
| EP1053567A1 (de) | 2000-11-22 |
| DE69936839T2 (de) | 2008-05-21 |
| JP2002532905A (ja) | 2002-10-02 |
| EP1053567B1 (de) | 2007-08-15 |
| WO2000036655A1 (en) | 2000-06-22 |
| US5973341A (en) | 1999-10-26 |
| KR100652449B1 (ko) | 2006-12-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |