EP0039177A3 - A solid-state imaging device - Google Patents

A solid-state imaging device

Info

Publication number: EP0039177A3
Authority: EP; European Patent Office
Prior art keywords: solid; imaging device; state imaging; state; imaging
Prior art date: 1980-04-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

EP81301670A

Other versions

EP0039177A2 (en

EP0039177B1 (en

Inventor

Masakazu Aoki

Haruhisa Ando

Shinya Ohba

Shoji Hanamura

Iwao Takemoto

Ryuichi Izawa

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Ltd

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1980-04-25

Filing date

1981-04-15

Publication date

1981-12-30

1981-04-15 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1981-11-04 Publication of EP0039177A2 publication Critical patent/EP0039177A2/en

1981-12-30 Publication of EP0039177A3 publication Critical patent/EP0039177A3/en

1984-01-25 Application granted granted Critical

1984-01-25 Publication of EP0039177B1 publication Critical patent/EP0039177B1/en

Status Expired legal-status Critical Current

Links

238000003384 imaging method Methods 0.000 title 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

EP81301670A 1980-04-25 1981-04-15 A solid-state imaging device Expired EP0039177B1 (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP5415880A JPS56152382A (en)	1980-04-25	1980-04-25	Solid image pickup element
JP54158/80		1980-04-25

Publications (3)

Publication Number	Publication Date
EP0039177A2 EP0039177A2 (en)	1981-11-04
EP0039177A3 true EP0039177A3 (en)	1981-12-30
EP0039177B1 EP0039177B1 (en)	1984-01-25

Family

ID=12962731

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP81301670A Expired EP0039177B1 (en)	1980-04-25	1981-04-15	A solid-state imaging device

Country Status (5)

Country	Link
US (1)	US4392158A (en)
EP (1)	EP0039177B1 (en)
JP (1)	JPS56152382A (en)
CA (1)	CA1169596A (en)
DE (1)	DE3162013D1 (en)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS57109488A (en) *	1980-12-26	1982-07-07	Matsushita Electric Ind Co Ltd	Solid color image pickup device
JPS57203387A (en) *	1981-06-10	1982-12-13	Toshiba Corp	Color television image pickup device
DE3138294A1 (en) *	1981-09-25	1983-04-14	Siemens AG, 1000 Berlin und 8000 München	TWO-DIMENSIONAL SEMICONDUCTOR IMAGE SENSOR WITH CONTROL OR REGULATION OF THE INTEGRATION TIME
EP0090066B1 (en) *	1982-03-31	1990-05-30	Ibm Deutschland Gmbh	Solid-state television camera
CA1199400A (en) *	1982-04-07	1986-01-14	Norio Koike	Solid-state imaging device
JPS5930376A (en) *	1982-08-13	1984-02-17	Olympus Optical Co Ltd	Solid-state image pickup device
JPS5952974A (en) *	1982-09-20	1984-03-27	Hitachi Ltd	Solid-state image pickup device
JPS5966277A (en) *	1982-10-07	1984-04-14	Toshiba Corp	Solid-state image sensor
JPS59108463A (en) *	1982-12-14	1984-06-22	Olympus Optical Co Ltd	Solid-state image pickup device
EP0130103A1 (en) *	1983-06-21	1985-01-02	FAIRCHILD CAMERA & INSTRUMENT CORPORATION	Charge-coupled device image sensor and method for asynchronous readout
JPS60149266A (en) *	1984-01-13	1985-08-06	Matsushita Electronics Corp	Solid state image pickup device
US4641193A (en) *	1984-12-07	1987-02-03	New York Institute Of Technology	Video display apparatus and method
US4639788A (en) *	1984-12-07	1987-01-27	New York Institute Of Technology	Video display method and apparatus
US4620232A (en) *	1985-03-15	1986-10-28	Fuji Photo Film Co., Ltd.	Reset circuit for MOS imager array
FR2599920B1 (en) *	1985-08-02	1988-12-09	Trt Telecom Radio Electr	ELECTRONIC INTERLEAVING METHOD FOR HORIZONTAL SCANNING THERMAL CAMERA
JPH0695735B2 (en) *	1985-12-25	1994-11-24	キヤノン株式会社	Solid-state imaging device
JP2656475B2 (en) *	1986-10-01	1997-09-24	株式会社日立製作所	Solid-state imaging device
JPH0687590B2 (en) *	1986-10-14	1994-11-02	富士写真フイルム株式会社	Method of reading solid-state image sensor
JP2559407B2 (en) *	1987-05-25	1996-12-04	キヤノン株式会社	Scanning circuit
US5200634A (en) *	1988-09-30	1993-04-06	Hitachi, Ltd.	Thin film phototransistor and photosensor array using the same
US5400072A (en) *	1988-12-23	1995-03-21	Hitachi, Ltd.	Video camera unit having an airtight mounting arrangement for an image sensor chip
JP2976242B2 (en) *	1989-09-23	1999-11-10	ヴィエルエスアイヴィジョンリミテッド	Integrated circuit, camera using the integrated circuit, and method for detecting incident light incident on an image sensor manufactured using the integrated circuit technology
JP3173851B2 (en) *	1992-04-13	2001-06-04	三菱電機株式会社	CSD type solid-state imaging device
US5790191A (en) *	1996-03-07	1998-08-04	Omnivision Technologies, Inc.	Method and apparatus for preamplification in a MOS imaging array
JP4723994B2 (en) *	2005-12-19	2011-07-13	株式会社東芝	Solid-state imaging device
US11544545B2 (en)	2017-04-04	2023-01-03	Hailo Technologies Ltd.	Structured activation based sparsity in an artificial neural network
US11551028B2 (en)	2017-04-04	2023-01-10	Hailo Technologies Ltd.	Structured weight based sparsity in an artificial neural network
US11238334B2 (en)	2017-04-04	2022-02-01	Hailo Technologies Ltd.	System and method of input alignment for efficient vector operations in an artificial neural network
US11615297B2 (en)	2017-04-04	2023-03-28	Hailo Technologies Ltd.	Structured weight based sparsity in an artificial neural network compiler
US10387298B2 (en)	2017-04-04	2019-08-20	Hailo Technologies Ltd	Artificial neural network incorporating emphasis and focus techniques

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2001504A (en) *	1977-07-13	1979-01-31	Hitachi Ltd	Colour solidstate imaging device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4001501A (en) *	1973-05-02	1977-01-04	Rca Corporation	Signal processing circuits for charge-transfer, image-sensing arrays
JPS5389617A (en) *	1977-01-19	1978-08-07	Hitachi Ltd	Driving method of solid image pickup element
JPS585627B2 (en) *	1977-08-10	1983-02-01	株式会社日立製作所	solid state imaging device

1980
- 1980-04-25 JP JP5415880A patent/JPS56152382A/en active Granted
1981
- 1981-04-15 EP EP81301670A patent/EP0039177B1/en not_active Expired
- 1981-04-15 DE DE8181301670T patent/DE3162013D1/en not_active Expired
- 1981-04-23 CA CA000376105A patent/CA1169596A/en not_active Expired
- 1981-04-24 US US06/257,461 patent/US4392158A/en not_active Expired - Lifetime

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2001504A (en) *	1977-07-13	1979-01-31	Hitachi Ltd	Colour solidstate imaging device

Also Published As

Publication number	Publication date
EP0039177A2 (en)	1981-11-04
DE3162013D1 (en)	1984-03-01
JPS6161586B2 (en)	1986-12-26
US4392158A (en)	1983-07-05
JPS56152382A (en)	1981-11-25
EP0039177B1 (en)	1984-01-25
CA1169596A (en)	1984-06-19

Legal Events

Date	Code	Title	Description
1981-09-04	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
1981-10-26	PUAL	Search report despatched	Free format text: ORIGINAL CODE: 0009013
1981-11-04	17P	Request for examination filed	Effective date: 19810707
1981-11-04	AK	Designated contracting states	Designated state(s): DE FR GB NL
1981-12-30	AK	Designated contracting states	Designated state(s): DE FR GB NL
1982-01-20	RBV	Designated contracting states (corrected)	Designated state(s): DE FR GB NL
1983-11-25	GRAA	(expected) grant	Free format text: ORIGINAL CODE: 0009210
1984-01-25	AK	Designated contracting states	Designated state(s): DE FR GB NL
1984-03-01	REF	Corresponds to:	Ref document number: 3162013 Country of ref document: DE Date of ref document: 19840301
1984-03-23	ET	Fr: translation filed
1984-11-26	PLBE	No opposition filed within time limit	Free format text: ORIGINAL CODE: 0009261
1984-11-26	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT
1985-01-30	26N	No opposition filed
1994-04-05	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: GB Payment date: 19940405 Year of fee payment: 14
1994-04-15	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: FR Payment date: 19940415 Year of fee payment: 14
1994-04-30	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: NL Payment date: 19940430 Year of fee payment: 14
1994-06-27	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: DE Payment date: 19940627 Year of fee payment: 14
1995-04-15	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: GB Effective date: 19950415
1995-11-01	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: NL Effective date: 19951101
1995-12-13	GBPC	Gb: european patent ceased through non-payment of renewal fee	Effective date: 19950415
1995-12-29	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: FR Effective date: 19951229
1996-01-02	NLV4	Nl: lapsed or anulled due to non-payment of the annual fee	Effective date: 19951101
1996-01-03	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: DE Effective date: 19960103
1996-03-29	REG	Reference to a national code	Ref country code: FR Ref legal event code: ST

Publication	Publication Date	Title
DE3162013D1 (en)	1984-03-01	A solid-state imaging device
GB2115636B (en)	1984-02-22	A solid-state imaging device
DE3070821D1 (en)	1985-08-01	Solid-state imaging apparatus
JPS57100573A (en)	1982-06-22	Camera device
GB2132051B (en)	1986-10-15	Solid-state imaging device
DE3070424D1 (en)	1985-05-09	Solid-state imaging device
GB2069237B (en)	1984-02-01	Solid state image-sensing device
GB2152781B (en)	1986-01-29	Imaging device
DE3063289D1 (en)	1983-07-07	Solid-state imaging device
DE3269826D1 (en)	1986-04-17	Imaging device
DE3172559D1 (en)	1985-11-07	Solid-state imaging device
GB2046015B (en)	1983-05-11	Solid-state imaging device
GB2045572B (en)	1983-05-11	Solid-state imaging device
GB2082349B (en)	1984-11-21	An image forming device
JPS5781763A (en)	1982-05-21	Facsimile device
GB2013026B (en)	1982-05-19	Solid-state imaging device
DE3062124D1 (en)	1983-03-31	Solid-state imaging device
DE3468786D1 (en)	1988-02-18	Solid-state photosensitive device
DE3170200D1 (en)	1985-05-30	Solid-state imaging device
DE3171759D1 (en)	1985-09-19	Solid-state imaging device
DE2966208D1 (en)	1983-10-27	Solid-state imaging device
JPS56126367A (en)	1981-10-03	Facsimile device
DE3367492D1 (en)	1986-12-11	Solid-state imaging device
DE3176376D1 (en)	1987-09-24	Solid-state imaging device
DE3380384D1 (en)	1989-09-14	Cmos device