EP0478956B1 - Micromechanical element - Google Patents
Micromechanical element Download PDFInfo
- Publication number
- EP0478956B1 EP0478956B1 EP91114504A EP91114504A EP0478956B1 EP 0478956 B1 EP0478956 B1 EP 0478956B1 EP 91114504 A EP91114504 A EP 91114504A EP 91114504 A EP91114504 A EP 91114504A EP 0478956 B1 EP0478956 B1 EP 0478956B1
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- EP
- European Patent Office
- Prior art keywords
- substrate
- conductive material
- micromechanical element
- microstructure body
- heating resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H61/00—Electrothermal relays
- H01H61/01—Details
- H01H61/013—Heating arrangements for operating relays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H61/00—Electrothermal relays
- H01H2061/006—Micromechanical thermal relay
Definitions
- the invention relates to a micromechanical element according to the preamble of claim 1.
- Such an element is known from DE 38 09 597 A1. It consists of a substrate to which a tongue partially adheres and an etching pit in the substrate into which the tongue moves when the temperature changes.
- the heating element that triggers this movement is - viewed from above - arranged symmetrically as a plate on the tongue.
- the disadvantage here is that the heating resistor is attached to the partially movable tongue and that the connection surface between the heating resistor and tongue is mechanically stressed during the movement, so that there is a risk that the heating resistor detaches.
- the known element only allows movements perpendicular to the substrate.
- a movement parallel to the substrate is usually cheaper because Have racks or gears and the like driven.
- DE-37 16 996 A1 discloses a deformation element which is formed from two interconnected strips of material with different expansion coefficients and has an electrical heater for heating and thus deforming the deformation element, in which the electrical heater is a film heating element which is firmly connected to the deformation element .
- the film heating element consists of a plastic film that is thinly metallized on one side and is again covered with a plastic film as protection or insulation.
- the metal layer of the film heating element can be structured.
- the object of the invention is to eliminate the disadvantages shown in the micromechanical element of the type mentioned.
- a micromechanical element of the type mentioned at the outset is to be proposed, in which the connection surface between the electrically conductive and the non-conductive material is subjected to less mechanical stress.
- the main advantage of the micromechanical element according to the invention in addition to the fact that the deflection takes place parallel to the substrate, is that the heating resistor 4 forms a much stronger connection with the plastic material of the tongue. This connection is strengthened if the heating resistor is at least partially meandering. Alternatively, if necessary, it can also be provided with toothing elements in one process step.
- control elements such. B. for gas or liquid flows, gears or racks and the like can be driven, which are on the same substrate with the same irradiation, development, etching and electroplating step.
- FIG. 1 shows a top view of the micromechanical element.
- FIG. 2 shows a further development, the microstructure body being partially surrounded by a metal jacket.
- Figures 3, 4 and 5 show different steps of a manufacturing process for the elements according to the invention.
- FIG. 1 shows a micromechanical element in which a microstructure body made of plastic and metal is located on an electrically non-conductive substrate 1, for example a silicon wafer, a glass or ceramic substrate.
- the microstructure body consists of a base body 2 which adheres firmly to the substrate and of a tongue 3 which is at a distance of a few micrometers from the substrate.
- a heating resistor 4 which has a U-shape, is embedded asymmetrically on one side of the tongue 3, one leg of the U-shape being meandering.
- the dimensions of the heating resistor are selected so that, on the one hand, in this area of the tongue 3 the metal surface is very high, for example over 50%, and on the other hand its electrical resistance is in a range suitable for the intended use. High resistances are advantageous because they allow the tongue to be heated quickly and with small currents.
- the heating resistor is connected to larger metal structures 5 (bond pads) which represent contacts to which a power source is connected from the outside.
- the tongue When an electrical voltage is applied to the two contacts 5, a current flows through the heating resistor of the tongue and heats it up. Since the tongue is made of plastic and a plastic-metal composite, the coefficients of thermal expansion of which differ, internal stresses occur. As a result of the asymmetrical arrangement of the heating resistor, the tongue moves parallel to the substrate when the temperature changes.
- the height of the tongue measured perpendicular to the substrate, is typically in the range of 300 »m, its width between 50 and 150» m.
- micromechanical element according to FIG. 1 can be produced by a method which is shown in FIGS. 3, 4 and 5.
- Figure 5 shows the finished element.
- Figure 3 shows a plan view and Figure 4 shows a section (B-B in Figure 1) through the micromechanical element during manufacture.
- a metal layer 6 with a thickness of preferably less than 1 »m is first applied by vapor deposition or sputtering, which is structured with the known steps of microelectronics (coating, exposure, development, selective etching).
- a spacer layer 7 with a thickness of preferably less than 10 »m is applied using the same methods and is structured analogously (FIG. 3). It must this spacer layer 7 can be selectively etched away. This is possible, for example, if one chooses silver, chrome, copper, nickel or gold as the metal layer 6 and titanium as the spacer layer 7.
- the part 6a of the metal layer 6 is used for the subsequent connection of the electroplating electrode.
- a plastic layer that is metallized can also be used as the spacer layer.
- a resist layer is then applied to this prepared substrate, which later forms both the non-conductive part of the microstructure body 2, 3 and the shape for the electrodeposition of the heating resistor 4 and the metal structures 5.
- the resist e.g. irradiated with X-rays 8 via an X-ray mask 9.
- the irradiated partial areas 10 and 11 of the resist are removed with a suitable developer, the unexposed areas remaining.
- the spacer layer 7 is removed by selective etching.
- the metal 4 must of course be resistant to the etchant with which the spacer layer is removed. If you take titanium as the spacer layer, you can use it for the metal structure many other materials, such as chrome, silver, copper, nickel or gold can be selected.
- a 5% hydrofluoric acid solution can be used as the etchant.
- FIG. 5 shows the finished micromechanical element according to FIG. 1 in section B-B.
- the microstructure body 2, 3 can also be constructed on a metallic substrate. In this case, the metal layer 6 is omitted. However, it must be ensured that the galvanic metal deposition takes place only at the points that form the heating resistor 4 and the contacts 5. This can be done either by a structured insulation layer, e.g. a photoresist, which is applied to the metallic substrate before the resist is applied.
- a structured insulation layer e.g. a photoresist
- the contacts 5 must be moved into the self-supporting, movable part 3 of the microstructure body in order to ensure the necessary insulation.
- the element shown in FIG. 1 can be produced with a single irradiation, in which both the resist regions 10, which serve as a mold for the electrically conductive material, and the resist regions 11 to be removed are irradiated.
- the micromechanical element according to FIG. 2 is produced by two adjusted irradiations.
- the first step all areas that are to be filled with metal are irradiated and developed. After the electroplating, the resist areas that are not required are irradiated and removed by the developer.
Abstract
Description
Die Erfindung betrifft ein mikromechanisches Element entsprechend dem Oberbegriff von Anspruch 1.The invention relates to a micromechanical element according to the preamble of
Ein solches Element ist aus der DE 38 09 597 A1 bekannt. Es besteht aus einem Substrat, an dem eine Zunge teilweise haftet, und einer Ätzgrube im Substrat, in die sich die Zunge bei Temperaturveränderung bewegt. Das Heizelement, das diese Bewegung auslöst, sitzt -von oben gesehen- symmetrisch angeordnet als Plättchen auf der Zunge.Such an element is known from DE 38 09 597 A1. It consists of a substrate to which a tongue partially adheres and an etching pit in the substrate into which the tongue moves when the temperature changes. The heating element that triggers this movement is - viewed from above - arranged symmetrically as a plate on the tongue.
Nachteilig ist hierbei, daß der Heizwiderstand auf der teilweise beweglichen Zunge angebracht ist und daß bei der Bewegung die Verbindungsfläche zwischen Heizwiderstand und Zunge mechanisch stark beansprucht wird, so daß die Gefahr besteht, daß sich der Heizwiderstand ablöst. Ferner läßt das bekannte Element nur Bewegungen senkrecht zum Substrat zu. Meist ist jedoch eine Bewegung parallel zum Substrat günstiger, weil sich damit z.B. Zahnstangen oder Zahnräder und dergleichen antreiben lassen.The disadvantage here is that the heating resistor is attached to the partially movable tongue and that the connection surface between the heating resistor and tongue is mechanically stressed during the movement, so that there is a risk that the heating resistor detaches. Furthermore, the known element only allows movements perpendicular to the substrate. However, a movement parallel to the substrate is usually cheaper because Have racks or gears and the like driven.
Aus der DE-37 16 996 A1 ist ein Verformungselement bekannt, welches aus zwei miteinander verbundenen Materialstreifen mit unterschiedlichen Dehnungskoeffizienten gebildet ist und eine elektrische Heizung zum Erwärmen und damit Verformen des Verformungselements aufweist, bei dem die elektrische Heizung ein fest mit dem Verformungselement verbundenes Folienheizelement ist. Das Folienheizelement besteht aus einer Kunststoff-Folie, die einseitig dünn metallisiert und als Schutz oder Isolierung wieder mit einer Kunststoff-Folie überzogen ist. Die Metallschicht des Folienheizelements kann strukturiert sein.DE-37 16 996 A1 discloses a deformation element which is formed from two interconnected strips of material with different expansion coefficients and has an electrical heater for heating and thus deforming the deformation element, in which the electrical heater is a film heating element which is firmly connected to the deformation element . The film heating element consists of a plastic film that is thinly metallized on one side and is again covered with a plastic film as protection or insulation. The metal layer of the film heating element can be structured.
Auch bei diesem Verformungselement werden die Verbindungsflächen zwischen Folienheizelement und Materialstreifen mechanisch stark beansprucht.With this deformation element, too, the connecting surfaces between the film heating element and the material strip are subjected to high mechanical stresses.
Aufgabe der Erfindung ist, die aufgezeigten Nachteile bei dem mikromechanischen Element der eingangs genannten Art zu beseitigen. Insbesondere soll ein mikromechanisches Element der eingangs genannten Art vorgeschlagen werden, bei dem die Verbindungsfläche zwischen dem elektrisch-leitenden und dem nichtleitenden Material weniger stark mechanisch beansprucht wird.The object of the invention is to eliminate the disadvantages shown in the micromechanical element of the type mentioned. In particular, a micromechanical element of the type mentioned at the outset is to be proposed, in which the connection surface between the electrically conductive and the non-conductive material is subjected to less mechanical stress.
Diese Aufgabe wird durch die in Anspruch 1 gekennzeichneten Merkmale gelöst. Die weiteren Ansprüche geben vorteilhafte Ausgestaltungen der Erfindung an.This object is achieved by the features characterized in
Der Mikrostrukturkörper kann beispielsweise durch Kunststoffabformung (Spritzguß, Reaktionsguß oder Prägetechnik) und Mikrogalvanik hergestellt werden. Dazu können Abformwerkzeuge in bekannter Weise mit Hilfe der Röntgenlithographie und Mikrogalvanik hergestellt werden.The microstructure body can be produced, for example, by plastic molding (injection molding, reaction molding or stamping technology) and micro-electroplating. For this purpose, impression tools can be manufactured in a known manner using X-ray lithography and micro-electroplating.
Der wesentliche Vorteil des erfindungsgemäßen mikromechanischen Elements liegt -neben der Tatsache, daß die Auslenkung parallel zum Substrat erfolgt- darin, daß der Heizwiderstand 4 eine wesentlich festere Verbindung mit dem Kunststoffmaterial der Zunge eingeht. Diese Verbindung wird noch verstärkt, wenn der Heizwiderstand zumindest teilweise mäanderförmig gestaltet ist. Alternativ kann er bei Bedarf in einem Verfahrensschritt zusätzlich mit Verzahnungselementen versehen werden.The main advantage of the micromechanical element according to the invention, in addition to the fact that the deflection takes place parallel to the substrate, is that the
Ein weiterer Vorteil besteht darin, daß mit dem erfindungsgemäßen mikromechanischen Element Steuerelemente z. B. für Gas- oder Flüssigkeitsströme, Zahnräder oder Zahnstangen und dgl. angetrieben werden können, die sich auf dem gleichen Substrat mit demselben Bestrahlungs-, Entwicklungs-, Ätz- und Galvanikschritt herstellen lassen.Another advantage is that with the micromechanical element according to the invention control elements such. B. for gas or liquid flows, gears or racks and the like can be driven, which are on the same substrate with the same irradiation, development, etching and electroplating step.
Dadurch entfallen zusätzliche Justierschritte.This eliminates the need for additional adjustment steps.
Die Erfindung wird im folgenden anhand von Figuren näher erläutert.The invention is explained in more detail below with reference to figures.
Figur 1 zeigt eine Aufsicht des mikromechanischen Elements.FIG. 1 shows a top view of the micromechanical element.
Figur 2 zeigt eine Weiterbildung, wobei der Mikrostrukturkörper teilweise von einem Metallmantel umgeben ist.FIG. 2 shows a further development, the microstructure body being partially surrounded by a metal jacket.
Figuren 3, 4 und 5 zeigen verschiedene Schritte eines Herstellungsverfahrens für die erfindungsgemäßen Elemente.Figures 3, 4 and 5 show different steps of a manufacturing process for the elements according to the invention.
In Figur 1 ist ein mikromechanisches Element dargestellt, bei dem sich auf einem elektrisch nicht leitenden Substrat 1, etwa einem Silizium-Wafer, einem Glas- oder Keramiksubstrat, ein Mikrostrukturkörper aus Kunststoff und Metall befindet. Der Mikrostrukturkörper besteht aus einem Grundkörper 2, der fest auf dem Substrat haftet und aus einer Zunge 3, die einen Abstand von wenigen Mikrometern zum Substrat besitzt. Auf einer Seite der Zunge 3 ist asymmetrisch ein Heizwiderstand 4 eingelassen, der eine U-Form aufweist, wobei ein Schenkel der U-Form mäanderförmig gestaltet ist. Die Maße des Heizwiderstands sind so gewählt, daß einerseits in diesem Bereich der Zunge 3 der Metallantell sehr hoch, beispielsweise über 50 % ist, andererseits sein elektrischer Widerstand in einem für den vorgesehenen Verwendungszweck geeigneten Bereich liegt. Vorteilhaft sind hohe Widerstände, da damit die Zunge rasch und mit kleinen Stromstärken erwärmt werden kann. Der Heizwiderstand ist mit größeren Metallstrukturen 5 (Bond Pads) verbunden, die Kontakte darstellen, an welche von außen eine Stromquelle angeschlossen wird.FIG. 1 shows a micromechanical element in which a microstructure body made of plastic and metal is located on an electrically
Beim Anlegen einer elektrischen Spannung an die beiden Kontakte 5 fließt ein Strom durch den Heizwiderstand der Zunge und erwärmt sie. Da die Zunge aus Kunststoff und einem Kunststoff-Metall-Verbund besteht, deren Wärmeausdehnungskoeffizienten sich unterscheiden, kommt es zu inneren Spannungen. Infolge der asymmetrischen Anordnung des Heizwiderstandes bewegt sich die Zunge bei Temperaturveränderungen parallel zum Substrat.When an electrical voltage is applied to the two
Die Höhe der Zunge senkrecht zum Substrat gemessen liegt typischerweise im Bereich von 300 »m, ihre Breite etwa zwischen 50 und 150 »m.The height of the tongue, measured perpendicular to the substrate, is typically in the range of 300 »m, its width between 50 and 150» m.
Figur 2 zeigt eine Weiterbildung dieses mikromechanischen Elements, bei dem die Zunge 3 vollständig mit einer Metallstruktur 12 umgeben ist. Damit die Verbindung zwischen Zunge 3 und dem Metallmantel 12 auch bei Spannungen erhalten bleibt, werden das Metall und der Kunststoff der Zunge ineinander verzahnt, z.B. durch Schwalbenschwanznuten 15.FIG. 2 shows a further development of this micromechanical element, in which the
Das mikromechanische Element nach Figur 1 kann durch ein Verfahren hergestellt werden, das in den Figuren 3, 4 und 5 dargestellt ist. Figur 5 zeigt das fertige Element.The micromechanical element according to FIG. 1 can be produced by a method which is shown in FIGS. 3, 4 and 5. Figure 5 shows the finished element.
Figur 3 zeigt eine Aufsicht und Figur 4 einen Schnitt (B-B in Figur 1) durch das mikromechanische Element während der Herstellung.Figure 3 shows a plan view and Figure 4 shows a section (B-B in Figure 1) through the micromechanical element during manufacture.
Auf einem dünnen nichtleitenden Substrat 1 wird zunächst eine Metallschicht 6 mit einer Dicke von vorzugsweise weniger als 1 »m durch Aufdampfen oder Aufsputtern aufgebracht, die mit den bekannten Schritten der Mikroelektronik (Belacken, Belichten, Entwickeln, selektiv Ätzen) strukturiert wird. In einem weiteren Schritt wird mit denselben Methoden eine Abstandsschicht 7 mit einer Dicke von vorzugsweise weniger als 10 »m aufgebracht, die analog strukturiert wird (Figur 3). Dabei muß diese Abstandsschicht 7 selektiv abätzbar sein. Dies ist z.B. möglich, wenn man als Metallschicht 6 Silber, Chrom, Kupfer, Nickel oder Gold wählt und als Abstandsschicht 7 Titan. Der Teil 6a der Metallschicht 6 dient dem späteren Anschluß der Galvanikelektrode.On a thin
Alternativ kann als Abstandsschicht auch eine Kunststoffschicht verwendet werden, die metallisiert wird.Alternatively, a plastic layer that is metallized can also be used as the spacer layer.
Auf dieses vorbereitete Substrat wird dann eine Resistschicht aufgebracht, die später sowohl den nichtleitenden Teil des Mikrostrukturkörpers 2, 3 als auch die Form für die galvanische Abscheidung des Heizwiderstands 4 und der Metallstrukturen 5 bildet.A resist layer is then applied to this prepared substrate, which later forms both the non-conductive part of the
Hierzu wird gem. Figur 4 der Resist z.B. mit Röntgenstrahlung 8 über eine Röntgenmaske 9 bestrahlt.For this, according to Figure 4 the resist e.g. irradiated with X-rays 8 via an
Die bestrahlten Teilbereiche 10 und 11 des Resits werden mit einem geeigneten Entwickler entfernt, wobei die unbestrahlten Bereiche stehen bleiben.The irradiated
In einem anschließenden Galvanikprozeß werden die frei entwickelten Bereiche 10, die am Untergrund eine metallische Schicht 6 oder 7 aufweisen, mit Metall für den Heizwiderstand 4 und die Metallstrukturen 5 aufgefüllt. Hierzu wird eine Stromquelle an den Teil 6a der Metallschicht angeschlossen. Zur Verhinderung einer unerwünschten galvanischen Metallabscheidung im Bereich 6a kann dieser mit einem isolierenden Lack abgedeckt werden.In a subsequent electroplating process, the freely developed
Nach der galvanischen Abscheidung des Metalls wird die Abstandsschicht 7 durch selektives Ätzen entfernt. Dabei muß selbstverständlich das Metall 4 beständig gegen das Ätzmittel sein, mit dem die Abstandsschicht entfernt wird. Nimmt man als Abstandsschicht z.B. Titan, so können für die Metallstruktur viele andere Materialien, z.B. Chrom, Silber, Kupfer, Nickel oder Gold gewählt werden.After the electrodeposition of the metal, the
In diesem Fall kann als Ätzmittel eine 5 %ige Flußsäurelösung verwendet werden.In this case, a 5% hydrofluoric acid solution can be used as the etchant.
Figur 5 zeigt das fertige mikromechanische Element nach Figur 1 im Schnitt B-B.FIG. 5 shows the finished micromechanical element according to FIG. 1 in section B-B.
Der Mikrostrukturkörper 2, 3 kann auch auf einem metallischen Substrat aufgebaut werden. In diesem Fall entfällt die Metallschicht 6. Dafür muß aber gesorgt werden, daß die galvanische Metallabscheidung nur an den Stellen erfolgt, die den Heizwiderstand 4 und die Kontakte 5 bilden. Dies kann entweder durch eine strukturierte Isolationsschicht, z.B. einen Photolack, erfolgen, die vor dem Auftragen des Resists auf das metallische Substrat aufgebracht wird.The
Alternativ können nach dem Bestrahlen und Entwickeln die nicht zu galvanisierenden Bereiche mit einem Schutzlack abgedeckt werden.Alternatively, after irradiation and development, the areas not to be galvanized can be covered with a protective lacquer.
In diesem Fall müssen die Kontakte 5 in den frei tragenden, beweglichen Teil 3 des Mikrostrukturkörpers verlegt werden, um die notwendige Isolierung zu gewährleisten.In this case, the
Das in Fig. 1 dargestellte Element kann mit einer einzigen Bestrahlung hergestellt werden, bei der sowohl die Resistbereiche 10, die als Form für das elektrisch leitende Material dienen, als auch die zu entfernenden Resistbereiche 11 bestrahlt werden.The element shown in FIG. 1 can be produced with a single irradiation, in which both the resist
Das mikromechanische Element nach Figur 2 wird durch zwei justierte Bestrahlungen hergestellt.The micromechanical element according to FIG. 2 is produced by two adjusted irradiations.
Im ersten Schritt werden alle Bereiche bestrahlt und entwickelt, welche mit Metall aufgefüllt werden sollen. Nach der Galvanik werden die nicht benötigten Resistbereiche bestrahlt und durch den Entwickler entfernt.In the first step, all areas that are to be filled with metal are irradiated and developed. After the electroplating, the resist areas that are not required are irradiated and removed by the developer.
Da bei dem mikromechanischen Element nach Fig. 2 die Bereiche des Resist, die die Form für den Metallmantel 12 bilden, und die Bereiche 11, die ganz entfernt werden, nebeneinander liegen und so nicht mehr durch einen verbleibenden Resistbereich getrennt sind, muß dieses Element durch zwei Bestrahlungen hergestellt werden.Since in the micromechanical element according to FIG. 2 the areas of the resist which form the shape for the
Claims (5)
- Micromechanical element, comprisinga) a substrate, andb) a microstructural body, which adheres to the substrate and is partially displaceable relative to said substrate as a result of a change in temperature, said microstructural body being, in turn, constructed fromcharacterised in that the heating resistance is disposed in the displaceable portion of the microstructural body so as to be offset in an asymmetrical manner when viewed in a vertical direction above the substrate, and said resistance is completely sunk in the microstructural body, its thickness corresponding to the thickness of the microstructural body when viewed with respect to said direction.b1) an electrically non-conductive material, and fromb2) an electrically conductive material,b3) at least a portion of the electrically conductive material forming a heating resistance,
- Micromechanical element according to claim 1, characterised in that the heating resistance has a U-shaped configuration.
- Micromechanical element according to claim 2, characterised in that at least one leg of the U-shaped heating resistance has a serpentine-like configuration.
- Micromechanical element according to one of claims 1 to 3, characterised in that the microstructural body is surrounded at least partially by a metal casing.
- Micromechanical element according to one of claims 1 to 4, characterised in that the electrically conductive material is indented with the electrically non-conductive material.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4031248 | 1990-10-04 | ||
| DE4031248A DE4031248A1 (en) | 1990-10-04 | 1990-10-04 | MICROMECHANICAL ELEMENT |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| EP0478956A2 EP0478956A2 (en) | 1992-04-08 |
| EP0478956A3 EP0478956A3 (en) | 1992-11-25 |
| EP0478956B1 true EP0478956B1 (en) | 1995-05-17 |
Family
ID=6415485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP91114504A Expired - Lifetime EP0478956B1 (en) | 1990-10-04 | 1991-08-29 | Micromechanical element |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0478956B1 (en) |
| AT (1) | ATE122816T1 (en) |
| DE (1) | DE4031248A1 (en) |
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Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL6913873A (en) * | 1968-09-19 | 1970-03-23 | ||
| DE3716996A1 (en) * | 1987-05-21 | 1988-12-08 | Vdo Schindling | Deformation element |
| DE3809597A1 (en) * | 1988-03-22 | 1989-10-05 | Fraunhofer Ges Forschung | MICROMECHANICAL ACTUATOR |
-
1990
- 1990-10-04 DE DE4031248A patent/DE4031248A1/en active Granted
-
1991
- 1991-08-29 AT AT91114504T patent/ATE122816T1/en not_active IP Right Cessation
- 1991-08-29 EP EP91114504A patent/EP0478956B1/en not_active Expired - Lifetime
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Also Published As
| Publication number | Publication date |
|---|---|
| EP0478956A2 (en) | 1992-04-08 |
| DE4031248A1 (en) | 1992-04-09 |
| DE4031248C2 (en) | 1992-07-23 |
| ATE122816T1 (en) | 1995-06-15 |
| EP0478956A3 (en) | 1992-11-25 |
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