EP0558007A3 - Semiconductor apparatus having excellent contact characteristics - Google Patents

Semiconductor apparatus having excellent contact characteristics Download PDF

Info

Publication number
EP0558007A3
EP0558007A3 EP19930102982 EP93102982A EP0558007A3 EP 0558007 A3 EP0558007 A3 EP 0558007A3 EP 19930102982 EP19930102982 EP 19930102982 EP 93102982 A EP93102982 A EP 93102982A EP 0558007 A3 EP0558007 A3 EP 0558007A3
Authority
EP
European Patent Office
Prior art keywords
semiconductor apparatus
contact characteristics
excellent contact
semiconductor
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19930102982
Other versions
EP0558007A2 (en
EP0558007B1 (en
Inventor
Masaru Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of EP0558007A2 publication Critical patent/EP0558007A2/en
Publication of EP0558007A3 publication Critical patent/EP0558007A3/en
Application granted granted Critical
Publication of EP0558007B1 publication Critical patent/EP0558007B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
EP93102982A 1992-02-28 1993-02-25 Electrical connection between a region of silicon and a film of oxide containing indium Expired - Lifetime EP0558007B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP75981/92 1992-02-28
JP4075981A JPH05243579A (en) 1992-02-28 1992-02-28 Semiconductor device

Publications (3)

Publication Number Publication Date
EP0558007A2 EP0558007A2 (en) 1993-09-01
EP0558007A3 true EP0558007A3 (en) 1993-11-03
EP0558007B1 EP0558007B1 (en) 1998-10-14

Family

ID=13591953

Family Applications (1)

Application Number Title Priority Date Filing Date
EP93102982A Expired - Lifetime EP0558007B1 (en) 1992-02-28 1993-02-25 Electrical connection between a region of silicon and a film of oxide containing indium

Country Status (4)

Country Link
US (1) US5650664A (en)
EP (1) EP0558007B1 (en)
JP (1) JPH05243579A (en)
DE (1) DE69321499T2 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2860869B2 (en) * 1993-12-02 1999-02-24 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
JPH07221174A (en) * 1993-12-10 1995-08-18 Canon Inc Semiconductor device and manufacturing method thereof
JP3486993B2 (en) * 1994-12-28 2004-01-13 セイコーエプソン株式会社 Active matrix substrate and liquid crystal display device
US6900855B1 (en) * 1995-10-12 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Display device having resin black matrix over counter substrate
JPH09105953A (en) * 1995-10-12 1997-04-22 Semiconductor Energy Lab Co Ltd Liquid crystal display device
JP3597305B2 (en) 1996-03-05 2004-12-08 株式会社半導体エネルギー研究所 Liquid crystal display device and manufacturing method thereof
JP2850850B2 (en) * 1996-05-16 1999-01-27 日本電気株式会社 Method for manufacturing semiconductor device
JP3640224B2 (en) * 1996-06-25 2005-04-20 株式会社半導体エネルギー研究所 LCD panel
US7298447B1 (en) * 1996-06-25 2007-11-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display panel
JP3856889B2 (en) 1997-02-06 2006-12-13 株式会社半導体エネルギー研究所 Reflective display device and electronic device
TW531684B (en) * 1997-03-31 2003-05-11 Seiko Epson Corporatoin Display device and method for manufacturing the same
KR100252223B1 (en) * 1997-08-30 2000-04-15 윤종용 Cleaning method of contact hole of semiconductor device
JP3362008B2 (en) * 1999-02-23 2003-01-07 シャープ株式会社 Liquid crystal display device and manufacturing method thereof
JP4450850B2 (en) * 2007-09-26 2010-04-14 Ｏｋｉセミコンダクタ株式会社 Manufacturing method of semiconductor device
KR101804589B1 (en) * 2009-12-11 2018-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
CN106960814A (en) * 2016-01-08 2017-07-18 中华映管股份有限公司 The manufacture method of dot structure

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0211402A2 (en) * 1985-08-02 1987-02-25 General Electric Company Process and structure for thin film transistor matrix addressed liquid crystal displays
EP0313199A1 (en) * 1987-10-15 1989-04-26 Sharp Kabushiki Kaisha Liquid crystal display device
EP0315319A2 (en) * 1987-11-06 1989-05-10 Sharp Kabushiki Kaisha Liquid crystal display device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58190063A (en) * 1982-04-30 1983-11-05 Seiko Epson Corp Thin film transistor for transmission type liquid crystal display panel
JPS5922361A (en) * 1982-07-28 1984-02-04 Seiko Epson Corp Semiconductor device
JPS5940582A (en) * 1982-08-30 1984-03-06 Seiko Epson Corp Semiconductor device
US4646424A (en) * 1985-08-02 1987-03-03 General Electric Company Deposition and hardening of titanium gate electrode material for use in inverted thin film field effect transistors
JPS62250422A (en) * 1986-04-23 1987-10-31 Matsushita Electric Ind Co Ltd Liquid crystal panel and its production
JPH01276746A (en) * 1988-04-28 1989-11-07 Sony Corp Formation of wiring
JP2893686B2 (en) * 1988-09-02 1999-05-24 ソニー株式会社 Method for manufacturing semiconductor device
JP2756841B2 (en) * 1989-10-13 1998-05-25 株式会社日立製作所 Display device
JP2940051B2 (en) * 1990-02-09 1999-08-25 富士通株式会社 Method of forming insulating thin film
JPH06208132A (en) * 1990-03-24 1994-07-26 Sony Corp Liquid crystal display device
US5367179A (en) * 1990-04-25 1994-11-22 Casio Computer Co., Ltd. Thin-film transistor having electrodes made of aluminum, and an active matrix panel using same
US5402254B1 (en) * 1990-10-17 1998-09-22 Hitachi Ltd Liquid crystal display device with tfts in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films before the deposition of silicon
KR960014823B1 (en) * 1991-03-15 1996-10-21 가부시기가이샤 히다찌세이사구쇼 Liquid crystal display device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0211402A2 (en) * 1985-08-02 1987-02-25 General Electric Company Process and structure for thin film transistor matrix addressed liquid crystal displays
EP0313199A1 (en) * 1987-10-15 1989-04-26 Sharp Kabushiki Kaisha Liquid crystal display device
EP0315319A2 (en) * 1987-11-06 1989-05-10 Sharp Kabushiki Kaisha Liquid crystal display device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 16, no. 14 (E-1154)14 January 1992 & JP-A-3 234 025 ( FUJITSU LTD ) 18 October 1991 *

Also Published As

Publication number Publication date
US5650664A (en) 1997-07-22
EP0558007A2 (en) 1993-09-01
EP0558007B1 (en) 1998-10-14
JPH05243579A (en) 1993-09-21
DE69321499T2 (en) 1999-05-06
DE69321499D1 (en) 1998-11-19

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