EP0609392A1 - Soi cmos device having body extension for providing sidewall channel stop and body tie - Google Patents
Soi cmos device having body extension for providing sidewall channel stop and body tieInfo
- Publication number
- EP0609392A1 EP0609392A1 EP92924126A EP92924126A EP0609392A1 EP 0609392 A1 EP0609392 A1 EP 0609392A1 EP 92924126 A EP92924126 A EP 92924126A EP 92924126 A EP92924126 A EP 92924126A EP 0609392 A1 EP0609392 A1 EP 0609392A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- region
- mesa
- source
- extension
- surface portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000012535 impurity Substances 0.000 claims abstract description 34
- 210000000746 body region Anatomy 0.000 claims description 40
- 230000005669 field effect Effects 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 25
- 239000004020 conductor Substances 0.000 claims description 6
- 230000001939 inductive effect Effects 0.000 claims 5
- 238000000034 method Methods 0.000 claims 5
- 230000008878 coupling Effects 0.000 claims 2
- 238000010168 coupling process Methods 0.000 claims 2
- 238000005859 coupling reaction Methods 0.000 claims 2
- 230000002401 inhibitory effect Effects 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 230000003071 parasitic effect Effects 0.000 abstract description 14
- 230000005865 ionizing radiation Effects 0.000 abstract description 10
- 239000000463 material Substances 0.000 abstract description 6
- 239000010409 thin film Substances 0.000 abstract description 6
- 229910052594 sapphire Inorganic materials 0.000 abstract description 4
- 239000010980 sapphire Substances 0.000 abstract description 4
- 239000012212 insulator Substances 0.000 abstract description 3
- 108091006146 Channels Proteins 0.000 abstract 6
- 102000004129 N-Type Calcium Channels Human genes 0.000 abstract 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 12
- 239000007943 implant Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002457 bidirectional effect Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
- H01L29/78615—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect with a body contact
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Une structure mesa d'un transistor MOS à couches minces silicium sur isolant/silicium sur saphire possède une zone substrat/canal (14) qui s'étend au-delà des zones de la source et du drain (16, 18) et la concentration d'impuretés est plus grande dans une partie sélectionnée (par exemple une partie terminale) du prolongement du substrat (31, 32), de façon qu'elle puisse servir à la fois d'emplacement d'accès de raccordement du substrat, ledit emplacement permettant le raccordement de la zone substrat/canal (14) à une tension de polarisation prescrite (par exemple Vss), et de zone d'arrêt de canal (41, 42), ladite zone pouvant, de façon fonctionnelle, interrompre un passage de courant de fuite ou un canal de type N parasite qui peut être induit le long de la surface de la paroi latérale du matériau de type P de la zone substrat/canal (14). Dans un autre mode de réalisation, l'inversion, induite par rayonnement ionisant, des parois latérales (83, 84) de la zone substrat/canal de type P (14) est empêchée par une structure d'arrêt de canal de parois latérales asymétrique (71, 72) formée dans les parties terminales opposées de la zone de la source (16).A mesa structure of a silicon-on-insulator/silicon-on-sapphire thin-film MOS transistor has a substrate/channel region (14) that extends beyond the source and drain regions (16, 18) and the concentration of impurities is greater in a selected part (for example an end part) of the extension of the substrate (31, 32), so that it can serve both as a location of access for connection of the substrate, said location allowing the connection of the substrate/channel zone (14) to a prescribed bias voltage (for example Vss), and of the channel stop zone (41, 42), said zone being able, in a functional manner, to interrupt a passage of leakage current or a parasitic n-type channel which may be induced along the surface of the side wall of the p-type material of the substrate/channel region (14). In another embodiment, ionizing radiation-induced inversion of the sidewalls (83, 84) of the P-type substrate/channel zone (14) is prevented by an asymmetric sidewall channel stopper structure (71, 72) formed in opposite end portions of the source region (16).
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/780,251 USH1435H (en) | 1991-10-21 | 1991-10-21 | SOI CMOS device having body extension for providing sidewall channel stop and bodytie |
PCT/US1992/009096 WO1993008603A1 (en) | 1991-10-21 | 1992-10-21 | Soi cmos device having body extension for providing sidewall channel stop and body tie |
US780251 | 2001-02-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
EP0609392A1 true EP0609392A1 (en) | 1994-08-10 |
Family
ID=25119055
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP92924126A Withdrawn EP0609392A1 (en) | 1991-10-21 | 1992-10-21 | Soi cmos device having body extension for providing sidewall channel stop and body tie |
Country Status (4)
Country | Link |
---|---|
US (1) | USH1435H (en) |
EP (1) | EP0609392A1 (en) |
JP (1) | JP2002516649A (en) |
WO (1) | WO1993008603A1 (en) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
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DE4441901C2 (en) * | 1994-11-24 | 1998-07-02 | Siemens Ag | MOSFET on SOI substrate and method for its production |
US5777362A (en) * | 1995-06-07 | 1998-07-07 | Harris Corporation | High efficiency quasi-vertical DMOS in CMOS or BICMOS process |
KR100190386B1 (en) * | 1995-09-28 | 1999-06-01 | 김영환 | Transister for electrostatic defence |
US5767549A (en) * | 1996-07-03 | 1998-06-16 | International Business Machines Corporation | SOI CMOS structure |
JP4032443B2 (en) * | 1996-10-09 | 2008-01-16 | セイコーエプソン株式会社 | Thin film transistor, circuit, active matrix substrate, liquid crystal display device |
US6160292A (en) * | 1997-04-23 | 2000-12-12 | International Business Machines Corporation | Circuit and methods to improve the operation of SOI devices |
JP3319975B2 (en) | 1997-05-08 | 2002-09-03 | 株式会社日立製作所 | Semiconductor element and liquid crystal display device using the same |
JP3859821B2 (en) * | 1997-07-04 | 2006-12-20 | 株式会社半導体エネルギー研究所 | Semiconductor device |
US5811855A (en) * | 1997-12-29 | 1998-09-22 | United Technologies Corporation | SOI combination body tie |
US6207985B1 (en) * | 1998-02-02 | 2001-03-27 | Texas Instruments Incorporated | DRAM memory cell and array having pass transistors with surrounding gate |
JP4236722B2 (en) | 1998-02-05 | 2009-03-11 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
US6448615B1 (en) | 1998-02-26 | 2002-09-10 | Micron Technology, Inc. | Methods, structures, and circuits for transistors with gate-to-body capacitive coupling |
US6180983B1 (en) * | 1998-07-17 | 2001-01-30 | National Semiconductor Corporation | High-voltage MOS transistor on a silicon on insulator wafer |
US6387739B1 (en) * | 1998-08-07 | 2002-05-14 | International Business Machines Corporation | Method and improved SOI body contact structure for transistors |
JP3573056B2 (en) * | 1999-07-16 | 2004-10-06 | セイコーエプソン株式会社 | Semiconductor device, semiconductor gate array, electro-optical device, and electronic equipment |
US6399989B1 (en) | 1999-08-03 | 2002-06-04 | Bae Systems Information And Electronic Systems Integration Inc. | Radiation hardened silicon-on-insulator (SOI) transistor having a body contact |
US6716728B2 (en) | 1999-08-03 | 2004-04-06 | Bae Systems Information And Electronic Systems Integration, Inc. | Radiation hardened silicon-on-insulator (SOI) transistor having a body contact |
US6307237B1 (en) * | 1999-12-28 | 2001-10-23 | Honeywell International Inc. | L-and U-gate devices for SOI/SOS applications |
JP3504212B2 (en) | 2000-04-04 | 2004-03-08 | シャープ株式会社 | Semiconductor device with SOI structure |
KR100672932B1 (en) * | 2000-12-26 | 2007-01-23 | 삼성전자주식회사 | Soi transistor and method of forming the same |
US6642579B2 (en) * | 2001-08-28 | 2003-11-04 | International Business Machines Corporation | Method of reducing the extrinsic body resistance in a silicon-on-insulator body contacted MOSFET |
JP2003086810A (en) * | 2001-09-11 | 2003-03-20 | Fujitsu Ltd | Semiconductor device and method of manufacturing the same |
JP2003174172A (en) * | 2001-09-26 | 2003-06-20 | Seiko Epson Corp | Field effect transistor, electroptical device using the same, semiconductor device and electronic apparatus |
US6804502B2 (en) | 2001-10-10 | 2004-10-12 | Peregrine Semiconductor Corporation | Switch circuit and method of switching radio frequency signals |
US20030222308A1 (en) * | 2002-05-30 | 2003-12-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | SOI MOSFET with compact body-tied-source structure |
US7019380B2 (en) * | 2003-06-20 | 2006-03-28 | Kabushiki Kaisha Toshiba | Semiconductor device |
DE10343132B4 (en) * | 2003-09-18 | 2009-07-09 | X-Fab Semiconductor Foundries Ag | Isolated MOS transistors with extended drain region for increased voltages |
US7304354B2 (en) * | 2004-02-17 | 2007-12-04 | Silicon Space Technology Corp. | Buried guard ring and radiation hardened isolation structures and fabrication methods |
US7084462B1 (en) | 2005-04-15 | 2006-08-01 | International Business Machines Corporation | Parallel field effect transistor structure having a body contact |
US7890891B2 (en) | 2005-07-11 | 2011-02-15 | Peregrine Semiconductor Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
US7910993B2 (en) | 2005-07-11 | 2011-03-22 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink |
WO2007061531A2 (en) * | 2005-10-14 | 2007-05-31 | Silicon Space Technology Corporation | Radiation hardened isolation structures and fabrication methods |
CN100423274C (en) * | 2006-01-27 | 2008-10-01 | 无锡中微晶园电子有限公司 | A radiation-resisting BTS SOI CMOS part structure |
US7446001B2 (en) * | 2006-02-08 | 2008-11-04 | Freescale Semiconductors, Inc. | Method for forming a semiconductor-on-insulator (SOI) body-contacted device with a portion of drain region removed |
JP2008010830A (en) * | 2006-05-31 | 2008-01-17 | Matsushita Electric Ind Co Ltd | Semiconductor device |
US7605413B2 (en) * | 2006-06-16 | 2009-10-20 | Taiwan Seminconductor Manufacturing Co., Ltd. | High voltage devices |
KR100772935B1 (en) * | 2006-08-07 | 2007-11-02 | 삼성전자주식회사 | Transistor and method of manufacturing the same |
EP2255443B1 (en) | 2008-02-28 | 2012-11-28 | Peregrine Semiconductor Corporation | Method and apparatus for use in digitally tuning a capacitor in an integrated circuit device |
GB2459667A (en) * | 2008-04-29 | 2009-11-04 | Sharp Kk | Thin film transistor and active matrix display |
JP2009277963A (en) * | 2008-05-16 | 2009-11-26 | Toshiba Corp | Semiconductor device |
JP5555864B2 (en) * | 2009-12-22 | 2014-07-23 | 株式会社ブルックマンテクノロジ | Insulated gate semiconductor device and insulated gate semiconductor integrated circuit |
US8643107B2 (en) * | 2010-01-07 | 2014-02-04 | International Business Machines Corporation | Body-tied asymmetric N-type field effect transistor |
US8426917B2 (en) * | 2010-01-07 | 2013-04-23 | International Business Machines Corporation | Body-tied asymmetric P-type field effect transistor |
US9093517B2 (en) * | 2012-05-25 | 2015-07-28 | Microsemi SoC Corporation | TID hardened and single event transient single event latchup resistant MOS transistors and fabrication process |
US10038058B2 (en) | 2016-05-07 | 2018-07-31 | Silicon Space Technology Corporation | FinFET device structure and method for forming same |
US10510835B2 (en) * | 2018-04-27 | 2019-12-17 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device with low random telegraph signal noise |
US11476279B2 (en) | 2020-08-06 | 2022-10-18 | Globalfoundries U.S. Inc. | Devices with staggered body contacts |
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-
1991
- 1991-10-21 US US07/780,251 patent/USH1435H/en not_active Abandoned
-
1992
- 1992-10-21 WO PCT/US1992/009096 patent/WO1993008603A1/en not_active Application Discontinuation
- 1992-10-21 JP JP50793393A patent/JP2002516649A/en active Pending
- 1992-10-21 EP EP92924126A patent/EP0609392A1/en not_active Withdrawn
Non-Patent Citations (1)
Title |
---|
See references of WO9308603A1 * |
Also Published As
Publication number | Publication date |
---|---|
WO1993008603A1 (en) | 1993-04-29 |
JP2002516649A (en) | 2002-06-04 |
USH1435H (en) | 1995-05-02 |
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Legal Events
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PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
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17P | Request for examination filed |
Effective date: 19940427 |
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Kind code of ref document: A1 Designated state(s): DE FR GB IT |
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Withdrawal date: 19941011 |
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R18W | Application withdrawn (corrected) |
Effective date: 19941010 |
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R18W | Application withdrawn (corrected) |
Effective date: 19941010 |
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STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN |
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