EP0926786A2 - Laser à émission de surface à cavité verticale avec guides optiques et guides de courant separés - Google Patents

Laser à émission de surface à cavité verticale avec guides optiques et guides de courant separés Download PDF

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Publication number
EP0926786A2
EP0926786A2 EP98310208A EP98310208A EP0926786A2 EP 0926786 A2 EP0926786 A2 EP 0926786A2 EP 98310208 A EP98310208 A EP 98310208A EP 98310208 A EP98310208 A EP 98310208A EP 0926786 A2 EP0926786 A2 EP 0926786A2
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Prior art keywords
current
layer
mirror
mesa
layers
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EP98310208A
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German (de)
English (en)
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EP0926786B1 (fr
EP0926786A3 (fr
Inventor
Leo Maria Chirovsky
Lucian Arthur D'asaro
William Scott Hobson
Sanghee Park Hui
Ronald Eugene Leibenguth
Betty Jyue Tseng
James Dennis Wynn
George John Zydzik
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Agere Systems LLC
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Lucent Technologies Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment

Definitions

  • This invention relates generally to vertical cavity surface-emitting lasers (VCSELs) and, more particularly, to such lasers which provide for both drive current confinement and optical mode confinement.
  • VCSELs vertical cavity surface-emitting lasers
  • VCSELs As compared with conventional edge-emitting semiconductor lasers, VCSELs hold the promise of a number of desirable characteristics. For example, the shorter cavity resonator of the VCSEL provides for better longitudinal mode selectivity, and hence narrower linewidths.
  • the use of multi-layered DBR mirrors to form a cavity resonator perpendicular to the layers obviates the need for the cleaving operation common to edge emitting lasers. This orientation of the resonator also facilitates both the fabrication of laser arrays and wafer-level testing of the individual lasers.
  • the prior art has proposed two basic VCSEL designs: one defines a current confinement region in a p-doped semiconductor DBR mirror by means of an apertured, high resistivity ion-implanted region (See, for example, Y. H. Lee et al., Electr. Lett., Vol. 26, No. 11, pp. 710-711 (1990) and T. E. Sale, Vertical Cavity Surface Emitting Lasers, Research Press Ltd., pp. 117-127 (1995), both of which are incorporated herein by reference.), whereas the other defines the current confinement region by means of an apertured, high resistivity oxide layer (See, for example, D. L. Huffaker et al., Appl Phys. Lett., Vol.
  • the I-I VCSEL does not form any significant optical guiding; i.e., it does not provide refractive index guiding of the transverse lasing modes, although there may be some gain guiding of the modes.
  • these lasers typically have threshold currents > 1 mA and operating currents > 3 mA. Electrical power dissipation per laser is, therefore, at least several mW.
  • the oxide (OX) confinement approach has been shown to be scaleable to much smaller dimensions (e.g., the current aperture may be as small as 3 ⁇ m), which allows for an order of magnitude decrease in both the threshold and operating currents.
  • the apertured oxide layer also forms an refractive index guide which leads to transverse mode confinement, resulting in at least another factor of two reduction in these currents.
  • the power dissipation per device can be reduced by at least a factor of twenty ( to a fraction of a mW) compared to the I-I design.
  • OX VCSELs have not yet proven to be as reliable as I-I VCSELs and may have a built-in stress problem. (See, Fig. 5 at p. 919 of K D. Choquette et al., IEEE Journal of Selected Topics in Quantum Electronics, Vol. 3, No. 3, pp.
  • this process entails oxidizing a high Al-content Group III-V layer after it has been covered by other layers; i.e., the outer edges of the high Al-content layer are exposed to water vapor so that oxidation progresses inwardly (i.e., laterally) over a relatively long distance (e.g., 10s of ⁇ m) toward the center and yet must be precisely stopped so as to leave a very small diameter (e.g., 3 ⁇ m) current guide unoxidized.
  • This process entails controlling oxidation time, assuming knowledge of the oxidation rate. However, this rate depends on many factors, including parameters of the process and properties of the materials to be oxidized. Controlling all of these factors is very difficult.
  • a VCSEL comprises separate current and optical guides that provide unique forms of drive current and transverse mode confinement, respectively.
  • the optical guide comprises an intracavity, high refractive index mesa disposed transverse to the cavity resonator axis and a multi-layered dielectric (i.e., non-epitaxial) mirror overlaying the mesa.
  • the current guide comprises an annular first electrode which laterally surrounds the mesa but has an inside diameter which is greater than that of an ion-implantation-defined current aperture.
  • the current guide causes current to flow laterally from the first electrode along a first path segment which is essentially perpendicular to the resonator axis, then vertically from the first segment along a second path segment essentially parallel to that axis, and finally through the current aperture and the active region to a second electrode.
  • a method of fabricating a VCSEL comprises the steps of forming a first multi-layered mirror, forming a current return layer, forming an active region, forming a current guide for causing current to flow through a current aperture to the active region, forming an optical guide in the form of a high refractive index mesa, forming a first electrode which laterally surrounds the mesa, forming a second electrode to the current return layer, and forming a second multi-layered mirror so as to at least partially embed the mesa therein.
  • the fabrication of these guides is facilitated by the use of a dielectric (i.e., non-epitaxial) second mirror which is deposited after the guides are made.
  • the first mirror is formed by epitaxial growth of semiconductor layers
  • the second mirror is formed by e-beam deposition of dielectric layers.
  • both mirrors are deposited dielectric layers.
  • a VCSEL 10 in accordance with one aspect of our invention comprises first and second multi-layered mirrors 12 and 14, respectively, forming an optical cavity resonator with its axis perpendicular to the layers.
  • An active region 16 and an optical guide 20 are disposed within the resonator and are oriented perpendicular to its axis.
  • the active region When suitably pumped, the active region generates stimulated emission of radiation (at a center wavelength ⁇ ) which propagates along the resonator axis and emerges from the resonator through one of the mirrors (e.g., second mirror 14) as an output signal 40.
  • the optical guide 20 in the form of a relatively high refractive index mesa, serves to confine the transverse modes of the lasing radiation; i.e., viewed another way, it defines the beam waist of the radiation.
  • the active region is pumped by means of a current guide 18 which includes a current confinement aperture 18.6.
  • the current guide 18 comprises a relatively high conductivity, contact-facilitating layer 18.1, an annular first electrode 18.4 formed on layer 18.1, a lower conductivity layer 18.2 beneath layer 18.1, and a high resistivity, ion-implanted region or zone 18.3 formed in the layer 18.2.
  • Region 18.3 typically has an annular shape, the central opening of which forms the current confinement aperture 18.6.
  • the ion-implanted region then causes the current to change directions and to flow essentially vertically (i.e., parallel to the resonator axis) along a second path segment through the upper portion of layer 18.2 to the aperture 18.6. At this point the current continues to flow essentially vertically through the active region 16, and completes its path to second annular electrode 26 via a high conductivity, current return layer 22 disposed between the active region 16 and the first mirror 12.
  • the region 18.3 is preferably implanted with relatively heavy ions (e.g. oxygen, fluorine) to a relatively shallow depth (e.g., 0.1-0.2 ⁇ m) below the top of high conductivity layer 18.1.
  • relatively heavy ions e.g. oxygen, fluorine
  • the structure is suitably annealed in order to remove shallow traps in layers 18.1 and 18.2, and yet retain deep traps which produce high resistivity in region 18.3.
  • the layer 18.1 may be replaced by a composite of three sub-layers (not shown); namely, a relatively low conductivity layer sandwiched between a pair of higher conductivity layers, with the bottom sub-layer being located relatively far below (e.g., 1500 A) the top of the upper sub-layer where the electrode would be formed.
  • the layer 18.3 then would be 2000-3000 A below the top of layer 18.1.
  • each high conductivity layer typically a few 100 A thick, straddles a node (to reduce free-carrier absorption), and the thickness of the low conductivity layer is chosen so that the nodes are N ⁇ /2n apart, where N is positive integer and n is the effective refractive index of the active region.
  • mirrors are illustratively multi-layered DBR reflectors comprising alternating sets of layers of different refractive index.
  • mirror 12 comprises alternating epitaxial layers of Group III-V compound semiconductor material, each layer being about ⁇ /4n s thick, where ns is the refractive index of the corresponding layer of semiconductor mirror 12.
  • one set comprises layers of Al x Ga 1-x As and the other set comprises layers of Al y Ga 1-y As, where x and y are different from one another.
  • mirror 14 comprises alternating layers of dielectric (i.e., non-epitaxial) material, each layer being about ⁇ /4n D thick, where n D is the refractive index of the corresponding layer of dielectric mirror 14.
  • one set comprises layers of a MgF 2 -CaF 2 composite, whereas the other set comprises layers of ZnS.
  • Composites with approximately a 95% MgF 2 and 5% CaF 2 by mole fraction in the layer are preferred from the standpoint of layer adhesion (to one another) and optical scattering.
  • Fluoride layers with this composition are preferably fabricated by e-beam deposition from a eutectic melt comprising approximately 47% MgF 2 and 53% CaF 2 by weight or, equivalently, approximately 53% MgF 2 and 47% CaF 2 by mole fraction.
  • the mirror 12 could also comprise dielectric layers of the type described with reference to mirror 14. In this case, an output signal could emanate from both mirrors. Or, one or more pairs of one of the dielectric mirrors could be replaced with a high reflectivity metal (e.g., Au or Ag) coating, thus forcing the output signal to emanate only from the other mirror.
  • the metal coating may also serve to reduce the topological profile of the device.
  • substrate as used herein means any support member on which other layers of the laser are formed. For example, it might be a single crystal body on which epitaxial layers are grown, or it might be a combination of such a substrate and an epitaxial buffer layer.
  • the optical guide 20 is at least partially embedded in the mirror 14; i.e., the mirror 14 overlays and directly contacts the guide 20.
  • the diameter of the mirror 14 is larger than that of the guide 20, thereby serving to reflect at least a portion of any radiation which is outside the beam waist defined by the guide 20, and may be larger than the inside diameter of the electrode 18.4, as shown.
  • guide 20 comprises a mesa formed by a relatively high refractive index layer 20.1 (e.g., GaAs), and may also include an underlying stop-etch layer 20.2 (e.g., an InGaP layer) and an overlying protective layer 20.3 (e.g., a glass layer).
  • the cross-sectional shape of the mesa may be rectangular, as shown, or may be curved (e.g., convex with the mesa being thicker in the center and tapering to thinner at its edges).
  • one of the lower refractive index layers of the mirror 14 is located immediately adjacent the high refractive index layer 20.1 (or the protective layer 20.3, if used) of the mesa, and the refractive index of layer 20.1 should be greater than that of the immediately adjacent layer of the mirror.
  • the stop-etch layer 20.2 allows for controlled etching to expose the portions of contact-facilitating layer 18.1 on which electrode 18.4 is formed.
  • protective layer 20.3 ensures that the top surface of high index layer 20.1 remains optically smooth during various processing steps, and that the N ⁇ /2n thickness discussed herein is preserved.
  • the protective layer 20.3 should be resistant to any chemicals used in subsequent processing steps (e.g., a developer used in a lift-off process or a chemical used in a cleaning step).
  • it should have a refractive index similar to that of the adjacent low refractive index layer of mirror 14.
  • Thin layers of glass, such as aluminum borosilicate glass (n 1.47) about 50-150 A thick, are particularly suitable for this purpose.
  • the latter glass may be e-beam deposited from source material (e.g., about 1% Al 2 O 3 , 3% B 2 O 3 and 96% SiO 2 by weight) commercially available from Corning Glassworks, Inc., Corning, N.Y. under the trademark VYCOR.
  • source material e.g., about 1% Al 2 O 3 , 3% B 2 O 3 and 96% SiO 2 by weight
  • the active region 16 is disposed between the current guide 18 and the current return layer 22.
  • the active region may be a single layer, but is preferably a well-known multi-quantum well (MQW) region comprising alternating layers of different bandgap; e.g., GaAs quantum well layers interleaved with AlGaAs barrier layers for operation at a center wavelength of about 0.85 ⁇ m.
  • the layer 22 typically comprises n-type GaAs.
  • the semiconductor layers of current guide 18 may comprise GaAs, but layer 18.1 is p ++ - type and layer 18.2 is p - - type (also known as ⁇ - type).
  • the total thickness of layer 22, active region 16, layers 18.1 and 18.2, and the optical guide 20 together should be N ⁇ /2n, as described above except that N > 1.
  • the high conductivity layer 18.1 is preferably located essentially at a node of the standing wave of the lasing radiation in the cavity resonator.
  • the active region is preferably located essentially at an anti-node of the standing wave.
  • the MQW active region For operation at other center wavelengths the MQW active region would be made of different semiconductor materials such as InP and InGaAsP (e.g., for operation at 1.3 ⁇ m or 1.5 ⁇ m), and the mirrors would have to be made of well-known materials that provide suitable reflectivity at those wavelengths. Similarly, for operation at 0.98 ⁇ m the MQW active region could be made of InGaAs and GaAs, or of InGaAs and GaAsP.
  • Electrodes 26 and 18.4 on the VCSEL are preferably annular contacts located on the same side of the laser, as shown, to facilitate applications such as flip-chip bonding of the laser to another chip or a circuit board.
  • the contact 26 could instead be a broad area contact located on the bottom of substrate 24, if the mirror 12 and the substrate 24 are suitably doped to provide a low resistance path therethrough.
  • a VCSEL of the type described above is fabricated by a sequence of process steps which produces lateral structural features that can be scaled reproducibly to smaller sizes than those of prior art VCSELs and which enables the optical guide 20 to be formed before the mirror 14 is formed.
  • the general process sequence includes the steps of providing a single crystal substrate 24, forming the mirror 12 on the substrate 24, forming the current return layer 22, forming the MQW active region 16, forming the current guide 18 on the active region, forming the optical guide 20 on the current guide 18, forming electrodes 26 and 18.4 to the laser, and forming mirror 14 on top of the optical guide 20.
  • the mirror 12 is epitaxially grown, and the mirror 14 is e-beam deposited. In another embodiment, both mirrors are e-beam deposited. In still another embodiment, the mirror 14 is made to overlap the annular electrode 18.4.
  • the various semiconductor layers of the VCSEL may be formed using molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) are both well suited to the thickness control required for many of the extremely thin layers; e.g. the layers of mirror 12 and MQW active region 16.
  • MBE molecular beam epitaxy
  • MOCVD metalorganic chemical vapor deposition
  • the dielectric (non-epitaxial) layers of mirror 14 are typically formed by e-beam deposition from single crystal sources under conditions which avoid crystalline devitrification. See, for example, US Patent No. 5,206,871, granted to D. G. Deppe et al. on April 27, 1993, which is incorporated herein by reference.
  • Other techniques, such as sputtering or plasma deposition, may also be suitable.
  • a masking process can be used to define the current aperture 18.6 and the guide 20 as a self-aligned structure. That is, the same photoresist mask used to shield the aperture 18.6 from ion-implantation can also be used to etch the shape of the mesa, with the underlying stop-etch layer 20.2 facilitating the etching of the overlying high index layer 20.1. However, in some cases it may be advantageous to form the aperture 18.6 and the guide 20 with different diameters (i.e., a structure that is not self aligned).
  • a different masking process is employed to pattern the dielectric mirror 14. More specifically, a layer of photoresist (PR) is deposited on top of the wafer after the contacts have been formed. The thickness of the PR should be greater than the intended height of the mirror 14. A re-entrant opening is formed in the PR. Illustratively, the re-entrant opening has a trapezoidal cross-section with the top of the trapezoid corresponding to the top of the opening. The dielectric mirror is then deposited in the opening and on top of the PR. Lastly, the PR is lifted off by suitable etching, leaving the desired dielectric mirror on the top of the VCSEL.
  • PR photoresist
  • VCSEL VCSEL of the type depicted in the figure.
  • fabrication of a single device is described, it will be understood, of course, that typically and array of devices is formed on a single wafer.
  • the various material, dimensions, and other parameters are provided by way of illustration only and, unless otherwise expressly indicated, are not intended to limit the scope of the invention.
  • MBE and MOCVD were used to grow all of the semiconductor layers.
  • undoped epitaxial layer as used herein generally means that the layer was not intentionally doped, but may have been subject to low level doping from background dopants in the growth chamber.
  • the VCSEL 10 was designed for operation at a free-space center wavelength of about 0.98 ⁇ m, a threshold current of about 1 mA, an operating current of about 3-5 mA, and a power dissipation of about 5-10 mW.
  • the laser comprising: an n + -doped single crystal GaAs substrate obtained from commercial sources; a DBR mirror 12 comprised 28 pairs of n + -doped GaAs/AlAs layers each doped with Si to about 3x10 18 cm -3 and about 696A / 829 A thick, respectively; an n-type GaAs current-return layer 22 doped with Si to about 1x10 18 cm -3 , an MQW active region 16 comprising 3 pairs of undoped In 0.2 Ga 0.8 As/GaAs layers, each layer being about 80 A thick; a ⁇ -type GaAs layer 18.2 about 3000 A thick and doped with Be to about 5x10 17 cm -3 ; a region 18.3 implanted with fluorine ions (at 100 keV and a dose of 4 x 10 12 cm -2 ) to a depth of about 0.1-0.2 ⁇ m below the top of layer 18.1 and forming a circular current aperture 18.6 either about 6 ⁇ m in
  • the structure was annealed at about 500° C for about 20 min.
  • the two electrodes both in the form of an annulus, were deposited by conventional e-beam evaporation techniques to form the electrode 18.4 as a p-type ohmic contact and the electrode 26 as an n-type ohmic contact.
  • an aluminum borosilicate glass protective layer 15 was deposited on the semiconductor surface on which dielectric mirror 14 was to be subsequently formed in order to protect the surface from attack by the PR developer described below.
  • a negative tone PR (i.e., NR8-3000 PR obtained from Futurrex Inc., Franklin, NJ) was spun on at 3000 rpm on the top of the wafer.
  • the PR was then soft baked at 130° C for 1 min. on a hot plate.
  • the PR was soaked for 10 min. in an aqueous alkaline RD2 developer.
  • the mirror 14 comprised 6 pairs of layers, each pair including a MgF 2 -CaF 2 layer having a refractive index of 1.38 and a thickness of about 1775 A and a ZnS layer having a refractive index of 2.30 and a thickness of about 1065 A.
  • the former layers were e-beam deposited in a vacuum chamber at a pressure of 1 x 10 -6 to 5 x 10 -6 Torr and at a substrate temperature of 50-80°C. Deposition took place from single crystal eutectic source (i.e., melt) of about 47% MgF 2 and 53% CaF 2 by weight or, equivalently, 53% MgF 2 and 47% CaF 2 by mole fraction.
  • the substrate was heated to above 100° C (e.g., 108° C) for about 15 min. before being lowered to the deposition temperature (e.g., 62° C).
  • lift-off of the PR was performed by soaking in boiling acetone for 2 min. Residual flakes of Pr were removed with an acetone spray.
  • both mirrors 12 and 14 may be made of dielectric layers.
  • all of the semiconductor layers e.g., current return layer 22, active region 16, current guide layers 18.1 and 18.2, and optical aperture 20
  • the guides would be formed, the contacts would be made, and mirror 14 would be deposited as described above.
  • the substrate would be removed (e.g., by a suitable etching technique), and mirror 12 would be deposited on the exposed layer 22, again using the process described above.
  • an opening may be formed therein exposing a portion of the current return layer 22. The mirror 12 would then be deposited in the opening.
  • the well known technique of delta-doping may be utilized to dope any of the semiconductor layers, especially those which have high levels of carrier concentration (e.g., layers 18.1 and 22).
  • the conductivity types of the various layers could be reversed; e.g., the current guide 18 could be n-type instead of the p-type and the current return layer 22 could p-type instead of n-type.
EP98310208A 1997-12-23 1998-12-11 Laser à émission de surface à cavité verticale avec guides optiques et guides de courant separés Expired - Lifetime EP0926786B1 (fr)

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US997710 1997-12-23
US08/997,710 US6169756B1 (en) 1997-12-23 1997-12-23 Vertical cavity surface-emitting laser with optical guide and current aperture

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EP0926786A2 true EP0926786A2 (fr) 1999-06-30
EP0926786A3 EP0926786A3 (fr) 2000-04-26
EP0926786B1 EP0926786B1 (fr) 2005-06-08

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WO2003058772A2 (fr) * 2001-12-28 2003-07-17 Finisar Corporation Confinement de courant, diminution et isolation de capacite de lasers a cavite verticale et a emission par la surface (vcsel) a l'aide de pieges elementaires profonds

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US6674948B2 (en) 2001-08-13 2004-01-06 Optoic Technology, Inc. Optoelectronic IC module
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US7026178B2 (en) 2001-11-13 2006-04-11 Applied Optoelectronics, Inc. Method for fabricating a VCSEL with ion-implanted current-confinement structure
US6618414B1 (en) 2002-03-25 2003-09-09 Optical Communication Products, Inc. Hybrid vertical cavity laser with buried interface
US6795478B2 (en) 2002-03-28 2004-09-21 Applied Optoelectronics, Inc. VCSEL with antiguide current confinement layer
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US6750071B2 (en) * 2002-07-06 2004-06-15 Optical Communication Products, Inc. Method of self-aligning an oxide aperture with an annular intra-cavity contact in a long wavelength VCSEL
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DE10012869A1 (de) * 2000-03-16 2001-09-27 Infineon Technologies Ag Vertikalresonator-Laserdiode mit koplanaren elektrischen Anschlußkontakten
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EP0926786B1 (fr) 2005-06-08
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JP3497752B2 (ja) 2004-02-16
JPH11243257A (ja) 1999-09-07
EP0926786A3 (fr) 2000-04-26

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