EP1098215A1 - Catadioptric objective comprising two intermediate images - Google Patents

Catadioptric objective comprising two intermediate images Download PDF

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Publication number
EP1098215A1
EP1098215A1 EP00122738A EP00122738A EP1098215A1 EP 1098215 A1 EP1098215 A1 EP 1098215A1 EP 00122738 A EP00122738 A EP 00122738A EP 00122738 A EP00122738 A EP 00122738A EP 1098215 A1 EP1098215 A1 EP 1098215A1
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EP
European Patent Office
Prior art keywords
objective
partial
objective according
image
refractive
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Granted
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EP00122738A
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German (de)
French (fr)
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EP1098215B1 (en
Inventor
Alois Herkommer
Gerd FÜRTER
Karl-Heinz Schuster
Rudolf Von Bünau
David R. Shafer
Wilhelm Ulrich
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Carl Zeiss SMT GmbH
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Carl Zeiss AG
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00Systems with reflecting surfaces, with or without refracting elements
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08Catadioptric systems
    • G02B17/0892Catadioptric systems specially adapted for the UV
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08Catadioptric systems
    • G02B17/0804Catadioptric systems using two curved mirrors
    • G02B17/0812Catadioptric systems using two curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70225Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70275Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

Definitions

  • the invention is related to a catadioptric objective comprising two intermediate images.
  • Fig. 12 Such is known from US 4,701,035 to Hirose as a microlithographic projection exposure system.
  • the objective shown there in Fig. 12 comprises two catoptric partial objectives and one catadioptric partial objective. All objectives are off-axis, not axially symmetric, purely spherical systems.
  • Catadioptric objectives with one intermediate image and a refractive partial objective are known as microlithographic projection systems with axial symmetry and central obscuration from US 5,488,299 to Elliott and Shafer and from DE 196 39 586 (US ser. No. 09/263,788) to Schuster, the latter being assigned to the assignee of this invention, and incorporated herein by reference.
  • Schuster shows only the mirrors to be aspherical and avoids big lenses in the beam path between them.
  • US 5,004,331 to Haseltine et al. discloses a catadioptric projector for projecting an image to a dome (of a flight simulator).
  • the system comprises an external entrance pupil as means for receiving substantially collimated light, a refractive subsystem of rotationally symmetric, coaxial lenses forming a pupil image which is situated at the central opening of an aspheric concave mirror, which together with another concave mirror forms a reflective pupil relay system. Both mirrors are tilted with respect to the optical axis of the refractive subsystem.
  • the whole system provides a wide field of view image on a spherical dome. Full visible spectrum colour correction is obtained by combination of different glass.
  • Advantageously these designs are to be used in the VUV spectral region for microscopy or microlithography.
  • Axial symmetry together with two intermediate images, two refractive and one catadioptric partial objectives, two intermediate images and at least one refractive partial objective are varied descriptions of the novel aspects of the invention according to claims 1 to 3.
  • FIG 4 Another aspect is given in claim 4 which clearly groups the mirrors in one catoptric partial objective, which cooperates with one or more purely refractive partial objectives.
  • the catoptric partial objective carries the burden of Petzval sum reduction or field flattening. This relieves the refractive partial objective from the need for beam contractions and expansions by negative and positive lens groups, as is long established with microlithographic projection exposure lenses, see e. g. Glatzel E., ZEISS-Information 26 (1981), p. 8-13, US 5,260,832 or US 5,903,400.
  • the refractive partial objective is simplified and the lens diameters are reduced. Especially for the proposed use in the VUV spectral region this gives great relief to the materials supply of suitable crystals or quartz glasses.
  • the preferred embodiments also are related to the cited Schuster or Elliott and Shafer designs with two coaxial central obscuration opposing convex mirrors, which allows for a very convenient axial symmetric construction of the objective.
  • Such inter alia has advantages in mechanical rigidity and in compatibility with established stepper/scanner architectures adapted to refractive objectives.
  • Claim 7 gives a preferred way of reducing obscuration by placing the intermediate images in the vicinity of the mirrors.
  • Claims 10 and 11 give quantitative limitations of the central openings.
  • Claims 8 and 9 show an alternative of claim 4, where lenses are inserted between the mirrors. As negative lenses these cooperate with the mirrors to give single material colour correction, relieving the need for band narrowing the laser light source or for using an achromatizing material pair in the VUV.
  • the chief ray height at each of the mirror bores is approximately the same in value , but opposite in sign. This measure allows for minimal central obscuration.
  • Claim 15 states that diffractive surfaces, as occasionally also proposed for projection exposure objectives, are also useful with this invention just as they are with refractive designs.
  • such objectives are preferably part of microscope or a microlithographic projection exposure system.
  • Claim 33 likewise gives the advantageous use of such objective for microlithographic projection exposure.
  • Claim 34 gives an advantageous way of microlithography using an objective according to preceding claims.
  • All lenses are made of fluorite CaF 2 and the system is adapted for illumination by the F 2 excimer-laser at 157 mm.
  • the first partial objective S1 is refractive and has a reduction ratio of -1/4,27.
  • the second partial objective S2 is catadioptric with two opposite concave aspheric mirrors Ml, M2 with central holes and two negative meniscus lenses 25, 26 and 27, 28 arranged between them. They are passed by the light beams three times. Its magnification ratio is-1/0,99. Such a magnification ratio near unity allows for a highly symmetric construction and optimal correction of distortions.
  • This arrangement is particularly suitable for chromatic correction and correction of field curvature, too. Therefore even with only one lens material CaF 2 a relatively wide laser bandwith of +-1.2 pm of an unnarrowed F2-laser is accepted by this objective.
  • a positive air lens - i. e. an air space in the form of a positive lens - between the lens surfaces 40 and 41 is characteristic.
  • the mirror holes are arranged next to the two intermediate images IMI 1 and IMI 2, where the beam diameters are at a minimum. Also the first partial objective S1 has substantial image reduction to keep this hole absolutely small, so that also the total mirror diameter is limited to a practical compact value.
  • the mirror holes are sized to be 2,0 mm larger in diameter than the closest ray at the edge of the field.
  • a obscuration mask is inserted at the pupil (aperture) plane of the first partial objective S2 - just in front of lens surface 9. This should be sized 20,25 % in diameter - equal to 4,1 % in area. Then the area obscuration at the edge of the field has the same value as at the center and the MTF curves are completely uniform over the field.
  • the wavefront correction of this example is better than 0,011 waves rms over the field of 17 x 7 mm 2 and less than 0,009 waves rms over the field of 17 x 6 mm 2 .
  • the distortion is 2.4 ppm and the median shift is 10 nm.
  • the system is of overall similarity with the first example, but with some significant deviations.
  • the first refractive partial objective S1 has its aperture plane enclosed by two menisci 209, 210 and 211, 212 which are concave towards the aperture plane.
  • an obscuring disk OD is inserted for the purpose of field-independent obscuration as described above.
  • Two lens surfaces 209 and 217 are aspheric, the first is next to the aperture plane to affect angle deviations and the second is more in the field region.
  • the imaging ratio of the first partial objective S1 is -1/4,67. Therefore the catadioptric partial objective can be so small.
  • the second partial objective S2 again is catadioptric with two aspheric mirrors M21, M22 and two negative meniscus lenses 223,224 and 225, 226. Now their distance has strongly decreased, but angles increased in the beam path. This allows for very limited diameters of only 230 mm at the given large field and large NA.
  • the reduction ratio is -1//0,97. In this embodiment, too, the central obscuration is 20% in diameter constant over the full field.
  • the mirrors M21, M22 are aspheric with maximum deviations from sphere being limited to 150 micrometers, which allows for good production and testing.
  • a third negative lens here would further optimize colour correction, if needed.
  • the third partial objective S3 shows the characteristic first meniscus lens 227,228 to be even more bent than in fig. 1. This helps for coma correction. Also the second lens 229,230 is a meniscus concave on the intermediate image IMI side, as the two final lenses 249,250 and 251,252 are menisci concave towards the image plane Im, what is preferred for aplanatism and correction of spherical aberration.
  • the positive air lens arranged between the lens surfaces 238 and 239 corrects the main part of spherical aberration. For this effect it is preferably arranged more in the pupil region of the objective than in a field region. However its arrangement before the pupil plane enables it to affect also the oblique spherical aberration in tangential and sagittal direction.
  • lens 245,246 together with the air space created in front of it assists to the effects of the aforementioned air space.
  • the imaging ratio of this third partial objective S23 is -1/1,11 near unity.
  • the arrangement is far from symmetry to the pupil plane, so that the strongly distorted intermediate image IMI can be transformed to a highly corrected image at the image plane Im.
  • S21 performs the reduction
  • S22 makes the colour and Petzval correction
  • S23 makes the fine tuning of imaging errors.
  • This second embodiment is not finely tuned to best error correction, but gives the principles of feasibility of such a design.
  • the example of fig. 3 has a purely catoptric partial objective S31 and a purely refractive partial objective S32 between object Ob and image Im, with intermediate image IMI. This avoids the big negative lenses f the catadioptric partial objectives of the aforementioned examples.
  • the mirrors Ml, M2 now are purely used for Petzval correction - correction of field curvature.
  • the chromatic characteristics of the objective are defined by the refractive partial objective S32.
  • Use of different lens materials allows for achromatization.
  • fluorides namely calcium fluoride (fluorspar, fluorite), barium fluoride, strontium fluoride, NaF, Lif etc. and/or quartz glass, also in specifically doped versions, are adequate.
  • positive lenses L1,L3 can be made of calcium fluoride and negative lens L2 can be made of barium fluoride or NaF, for example.
  • the refractive partial objective S32 has more lenses in a realistic microlithography or microscope objective and the lenses L1 to L3 shown are only schematic representatives.
  • the refractive partial objective S32 of this catadioptric objective as compared to a full refractive system is relieved from the burden of Petzval correction, it can be simplified.
  • the waist and bulge configuration with two and more waists of state-of-the-art refractive microlithographic reduction projection objectives is therefore not needed. Only one waist of minor beam reduction remains. Consequently the refractive partial objective S32 can be shorter, smaller in diameter and can have less lenses. Transmission and contrast are thus increased, while cost is decreased. Aspheric lens surfaces further help in this effect.
  • the catoptric partial objective S31 is free of lenses, its diameter is not critical: Precision aspherical mirrors with diameters of more than one meter are state of the art in astronomy, for example.
  • catoptric and refractive partial objective also can be changed in sequence. Then the diameter of the catoptric partial system is reduced in consequence of the imaging ratio of the refractive partial objective.
  • this system also is extended to a first refractive partial objective S41, a catoptric partial objective S42 and a second refractive partial objective S43 with intermediate images IMI1 and IMI2, as shown in the example of fig. 4.
  • the mirrors 440 and 441 are aspheric.
  • the second bulge comprises one asphere, the second waist one asphere, and the third bulge 2 aspheres.
  • the first bulge comprises one asphere, while the second of the two bulges comprises 2 aspheres.
  • the objective has a high correction quality, as the wavefront error calculated for two lines of 1 pm spectral distance is less than 8 millilambda at the maximum field height and reduces to less than five millilambda on the optical axis.
  • the central obscuration of the system can be designed to need by enlarging distance and diameter of the mirrors 440, 441 of the catoptric partial objective S42.
  • Ring sector field imaging is conventional with many catoptric and catadioptric projection exposure systems of generally asymmetric construction. Such can also be realized within the invention. Then, the mirrors only need an off-axis ring sector opening for entering of the light beam, and consequently the pupil only has a two sector obscuration with further reduced effects compared to the circular central obscuration.
  • Fig. 5 schematically shows a microscope with an objective according to the invention.
  • the objective is constituted by two refractive partial objectives S51, S53 and the intermediate catoptric or catadioptric partial objective S52.
  • the example shows two coaxial opposite mirrors M1, M2 and one negative lens L in it.
  • the design of the objective is generally as shown in the embodiments described above, but with image and object plane exchanged to obtain magnification, and with higher imaging ratio and smaller field.

Abstract

A catadioptric objective of axial symmetry with two intermediate images achieving high resolution and to be used advantageously in the VUV region for microscopy or microlithography. The objective comprises a first refractive partial objective (S1) which generates a first intermediate image in the central bore of a mirror (M2), a catadioptric second partial objective (S2) which generates a second intermediate image in the central bore of a mirror (M1) and a third refractive partial objective (S3) which generates the final image (Im).

Description

  • The invention is related to a catadioptric objective comprising two intermediate images.
  • Such is known from US 4,701,035 to Hirose as a microlithographic projection exposure system. The objective shown there in Fig. 12 comprises two catoptric partial objectives and one catadioptric partial objective. All objectives are off-axis, not axially symmetric, purely spherical systems.
  • Catadioptric objectives with one intermediate image and a refractive partial objective are known as microlithographic projection systems with axial symmetry and central obscuration from US 5,488,299 to Elliott and Shafer and from DE 196 39 586 (US ser. No. 09/263,788) to Schuster, the latter being assigned to the assignee of this invention, and incorporated herein by reference.
  • Elliott and Shafer show the intermediate image near to the central opening of one of the mirrors, and lenses are arranged in the light path between the mirrors forming Mangin mirrors.
    All their optical surfaces are spherical.
  • Schuster shows only the mirrors to be aspherical and avoids big lenses in the beam path between them.
  • US 5,004,331 to Haseltine et al. discloses a catadioptric projector for projecting an image to a dome (of a flight simulator). The system comprises an external entrance pupil as means for receiving substantially collimated light, a refractive subsystem of rotationally symmetric, coaxial lenses forming a pupil image which is situated at the central opening of an aspheric concave mirror, which together with another concave mirror forms a reflective pupil relay system. Both mirrors are tilted with respect to the optical axis of the refractive subsystem. The whole system provides a wide field of view image on a spherical dome. Full visible spectrum colour correction is obtained by combination of different glass.
  • It is an object of the invention to provide new design alternatives which allow for high resolution objectives with reduced lens diameters and high performance. Advantageously these designs are to be used in the VUV spectral region for microscopy or microlithography.
  • The solution of this problem is obtained by the objective according to one of the claims 1 to 4.
  • Axial symmetry together with two intermediate images, two refractive and one catadioptric partial objectives, two intermediate images and at least one refractive partial objective are varied descriptions of the novel aspects of the invention according to claims 1 to 3.
  • Another aspect is given in claim 4 which clearly groups the mirrors in one catoptric partial objective, which cooperates with one or more purely refractive partial objectives. In this case it is provided that the catoptric partial objective carries the burden of Petzval sum reduction or field flattening. This relieves the refractive partial objective from the need for beam contractions and expansions by negative and positive lens groups, as is long established with microlithographic projection exposure lenses, see e. g. Glatzel E., ZEISS-Information 26 (1981), p. 8-13, US 5,260,832 or US 5,903,400. In consequence the refractive partial objective is simplified and the lens diameters are reduced. Especially for the proposed use in the VUV spectral region this gives great relief to the materials supply of suitable crystals or quartz glasses.
  • Preferred embodiments and advantageous forms of the invention are subjects of the dependent claims 5 to 34.
    Namely, according to claim 5 the features given in the preceding independent claims are advantageously combined.
  • The preferred embodiments also are related to the cited Schuster or Elliott and Shafer designs with two coaxial central obscuration opposing convex mirrors, which allows for a very convenient axial symmetric construction of the objective. Such inter alia has advantages in mechanical rigidity and in compatibility with established stepper/scanner architectures adapted to refractive objectives.
  • As a central obscuration in principle has degenerating effects in imaging - though in many cases decidedly taken advantage of as in annular or quadrupole illumination or in pupil filtering and apodisation - the reduction of the obscuration by the central hole of the mirrors of this design is of importance.
  • Claim 7 gives a preferred way of reducing obscuration by placing the intermediate images in the vicinity of the mirrors. Claims 10 and 11 give quantitative limitations of the central openings.
  • Claims 8 and 9 show an alternative of claim 4, where lenses are inserted between the mirrors. As negative lenses these cooperate with the mirrors to give single material colour correction, relieving the need for band narrowing the laser light source or for using an achromatizing material pair in the VUV.
  • According to claim 12 it is especially advantageous that the chief ray height at each of the mirror bores is approximately the same in value , but opposite in sign. This measure allows for minimal central obscuration.
  • The sequence given in claim 13 where the mirror-containing partial objective is framed by the two refractive partial objectives is preferred as it allows for both intermediate image "planes" connected by the mirror containing partial objective to be curved such as to best exploit the specific correction capabilities of this partial objective.
  • While it is rather conventional that mirrors are aspheric also in the related art, in claim 14 it is specifically stated that aspheric lens surfaces prove advantageous with this design. All advantages and restrictions as recently established for refractive projection exposure objectives, see e. g. patent application DE 199 22 209 of Schuster and references cited therein, as incorporated herein by reference, hold also for the use of aspheric surfaces in the designs of this invention.
  • Claim 15 states that diffractive surfaces, as occasionally also proposed for projection exposure objectives, are also useful with this invention just as they are with refractive designs.
  • Other advantageous varieties and properties of the invention are subject of claims 16 to 30.
  • According to claims 31 and 32 such objectives are preferably part of microscope or a microlithographic projection exposure system. Claim 33 likewise gives the advantageous use of such objective for microlithographic projection exposure. Claim 34 gives an advantageous way of microlithography using an objective according to preceding claims.
  • The invention is described in more detail based on the examples shown in the drawings.
  • Fig. 1
    shows the lens section of an example of an objective with a refractive, a catadioptric, a second refractive partial objective in sequence, reduction ratio 1 : 6
    Fig 2
    shows another example of such an objective with reduction ratio 1 : 5
    Fig 3
    shows a schematic lens arrangement of an objective with a purely catoptric partial objective of axial symmetry
    Fig 4
    shows another example of the invention with a refractive, a catoptric, a second refractive partial objective in sequence.
    Fig 5
    shows schematically a microscope with an objective according to the invention
  • The example of Fig 1 is a 6 : 1 reduction objective for a scanner projection exposure apparatus of microlithography, with an image field diameter of 18.4 mm, an image side NA = 0.75, being telecentric in the object space and the image space.
  • All lenses are made of fluorite CaF2 and the system is adapted for illumination by the F2 excimer-laser at 157 mm.
  • Certainly modifications for other wavelengths with other materials are possible, e. g. 193 nm and quartz glass.
  • The first partial objective S1 is refractive and has a reduction ratio of -1/4,27.
  • It shows two distinct lens groups LG1 of four relatively big lenses of about 130 mm diameter, and after the aperture plane a second lens group LG 2 with significantly reduced diameter of about 80 mm and less. Here, the only aspheric lens surface is provided on surface 9 immediately subsequent to the aperture plane. Subsequent to the first intermediate image IMI 1, the second partial objective S2 is catadioptric with two opposite concave aspheric mirrors Ml, M2 with central holes and two negative meniscus lenses 25, 26 and 27, 28 arranged between them. They are passed by the light beams three times. Its magnification ratio is-1/0,99.
    Such a magnification ratio near unity allows for a highly symmetric construction and optimal correction of distortions.
  • This arrangement is particularly suitable for chromatic correction and correction of field curvature, too. Therefore even with only one lens material CaF2 a relatively wide laser bandwith of +-1.2 pm of an unnarrowed F2-laser is accepted by this objective.
  • Subsequent to the second intermediate image IMI2 the third partial objective S3 again is refractive.
  • It takes up the divergent light beam with a strongly bent meniscus 29,30. A positive air lens - i. e. an air space in the form of a positive lens - between the lens surfaces 40 and 41 is characteristic.
  • With its reduction ratio of -1/1,42 the overall reduction ratio of the system is reached.
  • The detailed data of Table 1 show that the objective is composed of relatively few elements of limited diameters which helps for practical feasibility, as CaF2 is very expensive and of limited availability. Also the light path in CaF2 is limited, thus reducing the problem of significant absorption at 157 mm.
  • The central obscuration necessitated by the fully coaxial construction of the catadioptric second partial objective S2 is a certain drawback, as such in principle deteriorates the modulation transfer function of an objective.
  • However, even in common refractive projection exposure objectives a small but distinct central obscuration is entered to accomodate beam paths of alignment systems etc.
  • Efforts are taken in the design to keep the central obscuration small, even with mirror diameters of practical size.
  • It was found that the diameter of the holes in the mirrors is minimized when the chief ray height is of equal value at the two holes, but opposite in sign.
  • Further the mirror holes are arranged next to the two intermediate images IMI 1 and IMI 2, where the beam diameters are at a minimum. Also the first partial objective S1 has substantial image reduction to keep this hole absolutely small, so that also the total mirror diameter is limited to a practical compact value.
  • The mirror holes are sized to be 2,0 mm larger in diameter than the closest ray at the edge of the field.
  • It is recommended that a obscuration mask is inserted at the pupil (aperture) plane of the first partial objective S2 - just in front of lens surface 9. This should be sized 20,25 % in diameter - equal to 4,1 % in area. Then the area obscuration at the edge of the field has the same value as at the center and the MTF curves are completely uniform over the field.
  • The wavefront correction of this example is better than 0,011 waves rms over the field of 17 x 7 mm2 and less than 0,009 waves rms over the field of 17 x 6 mm2. The distortion is 2.4 ppm and the median shift is 10 nm.
  • Colour correction reaches CHL = 34 nm/pm for longitudinal colour, so that a +-1.2 pm bandwidth of an unnarrowed F2-laser can be accepted.
  • The example of fig. 2 and table 2 has an increased image field of 22 x 9 mm2 as well as a significantly increased NA = 0,75, while the reduction ratio is changed to 5 : 1. The system is of overall similarity with the first example, but with some significant deviations.
  • The first refractive partial objective S1 has its aperture plane enclosed by two menisci 209, 210 and 211, 212 which are concave towards the aperture plane. Here, an obscuring disk OD is inserted for the purpose of field-independent obscuration as described above.
  • Two lens surfaces 209 and 217 are aspheric, the first is next to the aperture plane to affect angle deviations and the second is more in the field region.
  • The imaging ratio of the first partial objective S1 is -1/4,67. Therefore the catadioptric partial objective can be so small.
  • The second partial objective S2 again is catadioptric with two aspheric mirrors M21, M22 and two negative meniscus lenses 223,224 and 225, 226. Now their distance has strongly decreased, but angles increased in the beam path. This allows for very limited diameters of only 230 mm at the given large field and large NA. The reduction ratio is -1//0,97. In this embodiment, too, the central obscuration is 20% in diameter constant over the full field.
  • High NA of 0,7 at the intermediate images to allow for the small holes in the mirrors M21, M22 and a rather strong refractive power of the lenses 223,224 and 225,226 in between to give the required colour correction are specific to this example.
  • The mirrors M21, M22 are aspheric with maximum deviations from sphere being limited to 150 micrometers, which allows for good production and testing.
  • Also on the lenses between the mirrors aspheric surfaces could increase image quality. A third negative lens here would further optimize colour correction, if needed.
  • The third partial objective S3 shows the characteristic first meniscus lens 227,228 to be even more bent than in fig. 1. This helps for coma correction. Also the second lens 229,230 is a meniscus concave on the intermediate image IMI side, as the two final lenses 249,250 and 251,252 are menisci concave towards the image plane Im, what is preferred for aplanatism and correction of spherical aberration.
  • The positive air lens arranged between the lens surfaces 238 and 239 corrects the main part of spherical aberration. For this effect it is preferably arranged more in the pupil region of the objective than in a field region. However its arrangement before the pupil plane enables it to affect also the oblique spherical aberration in tangential and sagittal direction.
  • As a meniscus concave toward the pupil plane, lens 245,246 together with the air space created in front of it assists to the effects of the aforementioned air space.
  • The imaging ratio of this third partial objective S23 is -1/1,11 near unity. However, the arrangement is far from symmetry to the pupil plane, so that the strongly distorted intermediate image IMI can be transformed to a highly corrected image at the image plane Im.
  • Each partial objective has its part of the burden: S21 performs the reduction, S22 makes the colour and Petzval correction and S23 makes the fine tuning of imaging errors.
  • This second embodiment is not finely tuned to best error correction, but gives the principles of feasibility of such a design.
  • The aspheric surfaces of both examples of tables 1 and 2 are described by z = AS2 x h4 + AS3 x h6 + AS4 x h8 + AS5 x h10 + AS6 x h12 + AS7 x h10 with z = axial deviation from sphere, h = radial height from optical axis.
  • The example of fig. 3 has a purely catoptric partial objective S31 and a purely refractive partial objective S32 between object Ob and image Im, with intermediate image IMI. This avoids the big negative lenses f the catadioptric partial objectives of the aforementioned examples. The mirrors Ml, M2 now are purely used for Petzval correction - correction of field curvature.
  • The chromatic characteristics of the objective are defined by the refractive partial objective S32. Use of different lens materials allows for achromatization. For DUV/VUV excimer laser systems combinations of fluorides, namely calcium fluoride (fluorspar, fluorite), barium fluoride, strontium fluoride, NaF, Lif etc. and/or quartz glass, also in specifically doped versions, are adequate. Thus, for microlithography at 157 nm, positive lenses L1,L3 can be made of calcium fluoride and negative lens L2 can be made of barium fluoride or NaF, for example.
  • Naturally the refractive partial objective S32 has more lenses in a realistic microlithography or microscope objective and the lenses L1 to L3 shown are only schematic representatives.
  • As the refractive partial objective S32 of this catadioptric objective as compared to a full refractive system is relieved from the burden of Petzval correction, it can be simplified. The waist and bulge configuration with two and more waists of state-of-the-art refractive microlithographic reduction projection objectives is therefore not needed. Only one waist of minor beam reduction remains. Consequently the refractive partial objective S32 can be shorter, smaller in diameter and can have less lenses. Transmission and contrast are thus increased, while cost is decreased. Aspheric lens surfaces further help in this effect.
  • As the catoptric partial objective S31 is free of lenses, its diameter is not critical: Precision aspherical mirrors with diameters of more than one meter are state of the art in astronomy, for example.
  • Obviously the arrangement of catoptric and refractive partial objective also can be changed in sequence. Then the diameter of the catoptric partial system is reduced in consequence of the imaging ratio of the refractive partial objective.
  • For reasons of good accessibility of object Ob and image Im and of more design space for correction, it is advantageous if this system also is extended to a first refractive partial objective S41, a catoptric partial objective S42 and a second refractive partial objective S43 with intermediate images IMI1 and IMI2, as shown in the example of fig. 4.
  • The advantages of the first two embodiments with minimal obscuration and of the third example without big lenses between the mirrors M1, M2 can thus be combined.
  • Table 3 gives the design data of this example. This is a 157nm objective with all crystal lenses, most of LiF and some of NaF, giving excellent chromatic properties for an unnarrowed F2 laser with 1,5 pm band width. Reduction ratio is 1 :5, maximum image field height is 11,88 mm, NA = 0,75. Maximum lens diameter is 190,5 mm, maximum mirror diameter is 201 mm. The overall length Ob-Im is 1,459 m.
  • The use of crystal lenses in DUV to VUV microlithographic objectives is made here in adaptation of the earlier application DE 199 29 701.0 dated June 29, 1999 (99032 P) of co-inventor Schuster and the same assignee. This cited application as a whole shall be part of the disclosure of this application, too.
  • Consequently, negative NaF lenses are entered, plus one positive NaF meniscus 408, 409 in the first partial objective S41, which reduces lateral chromatic aberration, in an overall LiF lens system.
  • Aspheric surfaces are entered into this design at a number of surfaces, where this is advantageous. Consequently, also the mirrors 440 and 441 are aspheric.
    In the first, reducing partial objective S41, the second bulge comprises one asphere, the second waist one asphere, and the third bulge 2 aspheres. In the third partial objective S43 the first bulge comprises one asphere, while the second of the two bulges comprises 2 aspheres.
  • The aspheric surfaces of the example of tab. 3 are described by
    Figure 00070001
  • Where P is the height deviation as a function of the radius h (ray height with respect to the optical axis) with the aspheric constants C1 to C6 as given in table 3. δ is the inverse of the radius given in the table.
  • The objective has a high correction quality, as the wavefront error calculated for two lines of 1 pm spectral distance is less than 8 millilambda at the maximum field height and reduces to less than five millilambda on the optical axis.
  • The central obscuration of the system can be designed to need by enlarging distance and diameter of the mirrors 440, 441 of the catoptric partial objective S42.
  • Ring sector field imaging is conventional with many catoptric and catadioptric projection exposure systems of generally asymmetric construction. Such can also be realized within the invention. Then, the mirrors only need an off-axis ring sector opening for entering of the light beam, and consequently the pupil only has a two sector obscuration with further reduced effects compared to the circular central obscuration.
  • Fig. 5 schematically shows a microscope with an objective according to the invention.
  • As such primarily makes sense for a DUV/VUV inspection microscope, direct visual observation by an ocular is not shown, but an image detector CCD of any appropriate known sort is provided in the image plane of the objective. The objective is constituted by two refractive partial objectives S51, S53 and the intermediate catoptric or catadioptric partial objective S52. The example shows two coaxial opposite mirrors M1, M2 and one negative lens L in it.
  • The design of the objective is generally as shown in the embodiments described above, but with image and object plane exchanged to obtain magnification, and with higher imaging ratio and smaller field.
  • An illumination system Ill illuminates the object Ob appropriately.
    0,75 N.A., -2= 157 nm, β = 6X, 17 x 7 mm double-telecentric
    Element RADIUS [mm] THICKNESS [mm] APERTURE RADIUS [mm]
    OB -- 41.365
    1 207.804 15.0000 64
    2 7154.0 85.7060
    3 -148.152 10.000 60
    4 -480.523 27.979
    5 275.460 21.000 68
    6 -420.424 18.169
    7 91.168 20.000 62
    8 231.534 102.963
    9 -62.100 5.000 25
    10 551.104 10.065
    11 -77.910 9.000 32
    12 -47.566 1.000
    13 -281.444 12.500 41
    14 -83.966 1.000
    15 -1256.9 17.000 43
    16 -69.116 1.000
    17 99.668 7.000 40
    18 60.790 0.978
    19 63.022 18.000 37
    20 -177.094 1.000
    21 65.632 5.000
    22 43.522 9.388
    23 44.597 7.000 23
    24 115.690 20.474
    IMI1 -- -5.072
    M2 220.905 16.140 115
    25 349.084 11.500 112
    26 150.213 131.449
    27 -163.770 11.500 105
    28 -381.158 17.158
    Ml -228.356 115
    29 -42.092 21.059 35
    30 -51.728 1.000
    31 -194.937 18.000 59
    32 -113.392 1.000
    33 -1132.0 18.000 70
    34 -193.134 1.000
    35 458.425 18.000 74
    36 -386.456 93.349
    37 171.069 27.160 78
    38 -1302.6 1.000
    39 115.683 12.796 71
    40 79.902 53.335
    41 -108.436 37.180 61
    42 -140.231 1.000
    43 171.662 24.000 71
    44 -1877.0 29.921
    45 -118.760 37.456 66
    46 -131.389 1.000
    47 153.982 21.000 73
    48 1445,6 1.049
    49 72.396 20.001 59
    50 76.113 1.000
    51 53.654 49.996 49
    52 69.967 16.341
    IM -- --
  • Aspheric Surface Data
    9: ASO = 0 A   S 1 = 0   AS2 = -1.6880e-06
    AS3 = 1.5172e-10
       AS4 = -1.1366e-12/AS5 = 1.3050e-16/AS6 = 1.7402e-18
    AS7 = -2.4094e-21
    M1: ASO = 0   AS1 = 0   AS2 = -2.1332e-09
    AS3 = -1.157e-13
       AS4 = -2.4958e-18/AS5 = 2.735e-23/AS6 = -7.4436e-27
    AS7 = 1.5059e-31
    M2: ASO = 0   AS1 = 0   AS2 = 1.7841e-09
    AS3 = 6.8616e-14
       AS4 = 3.6976e-18/AS5 = 5:2619e-23/AS6 = -2.331e-27
    AS7 = 2.8845e-31
    M1, M2 central hole r = 15,3 nm
  • Index of refraction CaF2 at 157 nm: n = 1,55971
    5X, .75 N.A., 22 X 9 mm, λ = .157µm
    Element RADIUS [mm] THICKNESS [mm] APETURE RADIUS [mm]
    OB Telecentric 34.000
    201 170.721 15.000 73
    202 183.404 70.512
    203 -88.583 10.000 72
    204 -109.418 0.097
    205 489.985 31.998 86
    206 -223.861 105.847
    207 211.214 18.000 80
    208 1008.7 132.111
    209 98.261 7.000 38
    210 75.231 9.337
    OD -- 6.429 obscuring disk
    r = 6,75 mm
    211 -105.403 28.061 35
    212 -103.952 1.000
    213 2546.4 21.782 56
    214 -129.850 1.000
    215 459.497 25.167 59
    216 -117.119 1.000
    217 76.297 7.000 50
    218 52.636 5.014
    219 60.098 27.883 45
    220 -254.989 1.000
    221 158.480 18.301 38
    222 -1889.6 19.412
    IMI -4.449
    M2 198.917 11.198 115
    223 249.698 11.500 115
    224 141.621 95.251
    225 -146.113 11.500 105
    226 -279.951 14.507
    M1 -195.876126 115
    IMI2 -- 27.988
    227 -29.245 26.188 28
    228 -38.617 1.000
    229 -212.943 16.904 64
    230 -108.498 1.000
    231 -1195.7 19.000 74
    232 -186.309 1.000
    233 397.280 24.000 82
    234 -447.100 40.123
    235 184.325 28.000 82
    236 -5827.0 1.000
    237 94.479 15.000 71
    238 73.235 52.490
    239 -84.776 10.000 58
    240 -134.685 0.997
    241 548.320 30.000 72
    242 -202.022 1.370
    243 244.314 24.000 71
    244 -390.876 9.997
    245 -154.779 26.099 69
    246 -221.429 1.000
    247 170.308 27.000 69
    248 5689.0 1.000
    249 82.493 29.706 58
    250 66.456 1.000
    251 38.604 31.198 38
    252 74.002 16.468
    IM -- -- 11.9
  • Aspheric Surface Data
  • Surface 209
    ASO = 0   AS1 = 0   AS2 = -1.9059e-17
    AS3 = 5.2904e-10/AS4 = -2.9602e-13/AS5 = 2.9727e-16
    AS6 = -3.3981e-19/AS 7 = 3.3504e-23
  • Surface 217
    ASO = 0   AS1 = 0   AS2 = -2.7436e-07
    AS3 = -1.1707e-12/AS4 = -1.1841e-14/AS 5 = 1.8131e-17
    AS6 = -7.5053e-21/AS7 = 1.3749e-24
  • Surface M1
    ASO = 0   AS1 = 0   AS 2 = 1.9405e-09
    AS3 = 9.5605e-14/AS4 = -2.6910e-17/AS5 = 5.9514e-23
    AS6 = -7.7031e-26/AS7 = 1.8364e-30
  • Surface M2
    ASO = 0   AS1 = 0   AS2 = 3.2910e-09
    AS3 = 1.4964e-13/AS4 = -1.2351e-17/AS5 = 2.4844e-21
    AS6 = -1.9615e-25/AS7 = 6.7644e-30
  • M1, M2 central hole r = 15,5 mm
    SURFACE RADI I THICKNESS MATERIAL
    Ob 31.542
    402 161.992 15.188 LiF
    403 469.503 19.672
    404 231.249 8.649 LiF
    405 323.701 81.163
    406 -125.044 7.000 LiF
    407 1233.917 29.038
    408 -136.3150 28.504 NaF
    409 -110.661 42.406
    410 166.198 38.763 LiF
    411 -426.980 33.045
    412 102.987 42.894 LiF
    413 -497.639 3.533
    414 -344.154 7.000 NaF
    415 110.870 62.455
    416 -313.200 7.000 LiF
    417 306.167 12.322
    AS1 4.589
    419 -294.9867 7.21 NaF
    420 139.1333 10.42
    421 -198.121 17.91 LiF
    422 -67.419 .7642
    423 -423.496 14.9924 LiF
    424 -117.918 .8112
    425 743.808 8.0149 NaF
    426 123.869 .9171
    427 128.249 44.3083 LiF
    428 -90.153 .8501
    429 230.303 11.2449 LiF
    430 1688.121 1.1630
    431 122.245 7.9843 NaF
    432 59.579 .7500
    433 60.793 24.9206 LiF
    434 -934.252 1.1385
    435 87.724 10.9289 LiF
    436 74.6528 7.4167
    437 43.171 13.3010 LiF
    438 47.425 5.000
    IMI1 135.0601
    440 -248.671 -135.,0601
    441 243.629 135.2019
    IMI2 21.4887
    443 -39.71329 27.9107 LiF
    444 -53.040 2.7851
    445 -218.179 26.3722 LiF
    446 -100.461 2.5410
    447 -444.958 33,4544 LiF
    448 -125.627 3.4864
    449 205.875 52.0553 LiF
    450 -445.534 3.1476
    451 -393.14835 7.1061 NaF
    452 529.85954 10.9028
    453 171.69804 54.8263 LiF
    454 -3285.94521 2.9859
    455 1249.94523 10.7714 NaF
    456 188.56505 53.9985
    457 -102.09026 18.5249 LiF
    458 -114.02167 3.1811
    459 -108.06602 36.3405 LiF
    460 -122.25579 .8148
    461 237.93896 30.4791
    462 -591.44374 33.9271
    463 -131.73596 9.2936 NaF
    464 -816.022 4.0340
    465 -921.759 43.70 LiF
    466 -161.952 12.96
    467 135.682 35.56 LiF
    468 485.873 7.77
    469 74.486 26.357 LiF
    470 88.618 3.623
    471 64.861 56.517 LiF
    472 65.449 20.524
    Im
  • Aspheric constants
    11 A C1 .43635053E-07 C2 -.10565814E-11 C3 .33243511E-16
    C4 -.27930883E-20 C5 .11432015E-24 C6 -.33257819E-29
    19 A C1 -.96601935E-06 C2 .70267826E-10 C3 .31115875E-13
    C4 -.43329420E-17 C5 -.41852201E-20 C6 .30053413E-25
    25 A C1 -.29611487E-07 C2 .20760499E-10 C3 -.12518124E-14
    C4 -.52770520E-18 C5 .86996061E-22 C6 -.19792693E-27
    34 A C1 -.15885997E-06 C2 .52924012E-10 C3 -.73552870E-14
    C4 -.86379790E-18 C5 .59324551E-21 C6 -.39153227E-25
    40 A C1 .23060301E-07 C2 .81122530E-13 C3 -,32179819E-17
    C4 .71766836E-21 C5 -.46055104E-26 C6 .12956188E-31
    41 A C1 -.11072232E-07 C2 .31369498E-13 C3 .77375306E-17
    C4 19892497E-21 C5 -.89740115E-26 C6 .68627541E-31
    49 A C1 .56699275E-08 C2 .57127904E-12 C3 .59227712E-16
    C4 .21077816E-20 C5 .15595431E-24 C6 -.13690607E-29
    63 A C1 -.17174244E-07 C2 .18573484E-11 C3 -.42802250E-16
    C4.51394491E-20 C5-.37650847E-24 C6 .22638360E-28
    68 A C1 .10650246E-07 C2 .20265609E-11 C3-.88014450E-16
    C4 .91073382E-20 C5 -.55181052E-24 C6 .37391374E-28

Claims (34)

  1. A catadioptric objective of axial symmetry comprising two intermediate images.
  2. A catadioptric objective comprising two refractive partial objectives and one catadioptric partial objective.
  3. An objective comprising
    a first partial objective,
    a first intermediate image,
    a second partial objective,
    a second intermediate image,
    a third partial objective,
    wherein at least one of said partial objectives is purely refractive.
  4. An objective comprising at least
    a first partial objective,
    an intermediate image,
    a second partial objective,
    one of said partial objectives being purely refractive and one being purely catoptric.
  5. An objective according to a combination of at least two of the claims 1 to 4.
  6. An objective according to at least one of claims 1 to 5, characterized in that it comprises a partial objective with two opposing concave mirrors with central bores, and with an optical axis, said concave mirrors being arranged axially symmetric with respect to said optical axis, their concave surfaces facing each other.
  7. An objective according to claim 6, wherein
    each of said concave mirrors has a vertex situated on said optical axis, and wherein each of said intermediate images has a maximum image height and is given on a surface with a piercing point on said optical axis, and at least one of said vertici is distant from at least one of said piercing points by a distance less than the maximum image height of the image having said piercing point.
  8. An objective according to claim 6 or 7, wherein
    at least one lens is arranged in the beam path between the two concave mirrors.
  9. An objective according to claim 8, wherein said at least one lens has negative refractive power.
  10. An objective according to at least one of claims 6 to 9, wherein
    said concave mirrors have central openings with a radius, each of said radii being no greater than 1,5 times the maximum image height of the neighbouring intermediate image.
  11. An objective according to at least one of claims 6 to 10, wherein
    each of the radii of said central openings is less than 25 % of the maximum light beam height at said concave mirror.
  12. An objective according to at least one of claims 6 to 11, wherein
    the light beam has a chief ray height at each of the bores, which is of equal value but opposite sign at the two bores.
  13. An objective according to at least one of claims 1 to 12, wherein
    a first refractive partial objective,
    a partial objective comprising at least one mirror, and
    a second refractive partial objective
    are arranged in sequence.
  14. An objective according to at least one of claims 1 to 13, wherein
    at least one lens of said refractive partial objectives has an aspheric surface.
  15. An objective according to at least one of claims 1 to 14, wherein
    at least one of said partial objectives comprises a diffractive optical element.
  16. An objective according to at lest one of claims 1 to 15, wherein
    said partial objective comprising at least one mirror has a magnification ratio in the range between -1/0,7 and-1/1,3.
  17. An objective according to claims 13 and 16, wherein
    the first refractive partial objective has a magnification ratio of -1/3 to -1/8.
  18. An objective according to claims 13 and 16 or to claim 17, wherein
    the second refractive partial objective has a magnification ratio of -1/0,8 to -112.
  19. An objective according to at least one of claims 1 to 18, wherein
    at least one of the first and second refractive partial objectives consists of a first positive lens group, a negative lens group and a second positive lens group.
  20. An objective according to at least one of claims 1 to 19, wherein
    said negative lens group comprises at least two negative menisci, their concave surfaces facing each other.
  21. An objective according to claim 19 or 20, wherein
    at least one of said first and second positive lens groups comprises at least four positive lenses.
  22. An objective according to at least one of claims 1 to 21, wherein
    all lenses contained are made of the same material, preferably a fluoride crystal.
  23. An objective according to at least one of claims 4 - 21, wherein lenses are made from at least two different fluorides.
  24. An objective according to at least one of claims 1 to 23, wherein
    the image field is an off-axis ring sector.
  25. An objective according to at least one of claims 1 to 24, wherein the first partial objective has a pupil plane and a central obscuration device is located near said pupil plane.
  26. An objective according to at least one of claims 1 - 25 wherein at least one of the refractive partial objectives has at least a first lens group and a second lens group, one of them having lesser lens diameters.
  27. An objective according to claim 14 and claim 26, wherein the at least one aspherical lens surface is on a lens of the lens group with lesser lens diameters.
  28. An objective according to at least one of claims 1 to 27, wherein the third partial objective has at least one positive concave air lens-near its pupil plane, namely located at a distance from the second intermediate image of between 25 % and 75% of the length of this partial objective.
  29. An objective according to at least one of claims 1 - 28, wherein the image side partial objective has two first lenses subsequent to the second intermediate image, which are menisci concave on the side of the intermediate image, and two last lenses adjacent to the image, which are menisci concave on the side of the image.
  30. An objective according to at least one of claims 1 to 29, wherein the image side partial objective has a pupil plane and at least one lens arranged at a distance from the image plane of between 25 % and 75 % of the length of the image side partial objective is a meniscus concave toward the pupil plane.
  31. A microscope comprising an objective according to at least one of claims 1 to 30.
  32. A microlithographic projection exposure apparatus comprising a projection objective according to at least one of claims 1 to 30.
  33. Use of a projection objective according to at least one of claims 1 to 30 for microlithographic projection exposure.
  34. Method of microlithographic structuring of a substrate comprising the step of illuminating a mask with VUV light and projecting an image of said mask onto said substrate through a projection objective according to at least one of claims 1 to 30.
EP00122738A 1999-11-05 2000-10-19 Catadioptric objective comprising two intermediate images Expired - Lifetime EP1098215B1 (en)

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US8908294B2 (en) 2012-05-18 2014-12-09 Canon Kabushiki Kaisha Catadioptric optical system with high numerical aperture
US9329373B2 (en) 2013-02-13 2016-05-03 Canon Kabushiki Kaisha Catadioptric optical system with multi-reflection element for high numerical aperture imaging
JP5786919B2 (en) * 2013-10-28 2015-09-30 株式会社ニコン Projection optical system, exposure apparatus and exposure method
JP2014160274A (en) * 2014-04-21 2014-09-04 Nikon Corp Projection optical system, exposure device, exposure method, and method of manufacturing the device
JP2015132843A (en) * 2015-03-02 2015-07-23 株式会社ニコン Projection optical system, exposure device, exposure method, and device manufacturing method
JP2016136273A (en) * 2016-03-07 2016-07-28 株式会社ニコン Projection optical system, exposure device, exposure method and device fabrication method
JP2018010303A (en) * 2017-08-03 2018-01-18 株式会社ニコン Light exposure device and device manufacturing method
JP2019082711A (en) * 2019-01-15 2019-05-30 株式会社ニコン Projection optical system, exposure device, exposure method, and device manufacturing method
JP2019091057A (en) * 2019-01-15 2019-06-13 株式会社ニコン Exposure apparatus and device manufacturing method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5004331A (en) * 1989-05-03 1991-04-02 Hughes Aircraft Company Catadioptric projector, catadioptric projection system and process
US5488229A (en) * 1994-10-04 1996-01-30 Excimer Laser Systems, Inc. Deep ultraviolet microlithography system
EP0737878A2 (en) * 1995-04-12 1996-10-16 State Of Israel Ministry Of Defence Rafael Armament Development Authority Catadioptric optics for staring array detector system
US5636066A (en) * 1993-03-12 1997-06-03 Nikon Corporation Optical apparatus
US5717518A (en) * 1996-07-22 1998-02-10 Kla Instruments Corporation Broad spectrum ultraviolet catadioptric imaging system
DE19639586A1 (en) * 1996-09-26 1998-04-02 Zeiss Carl Fa Catadioptric microlithography reduction lens

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU124665A1 (en) 1959-03-30 1959-11-30 В.А. Панов Immersionless mirror-lens achromatic microscope objective
NL269391A (en) 1961-09-19
US4701035A (en) 1984-08-14 1987-10-20 Canon Kabushiki Kaisha Reflection optical system
JPS627000A (en) * 1985-02-06 1987-01-13 大和紡績株式会社 Deodorizing wet nonwoven fabric
DE3527393A1 (en) 1985-07-31 1987-02-05 Wolf Gmbh Richard ENDOSCOPE OPTICS
JP3635684B2 (en) * 1994-08-23 2005-04-06 株式会社ニコン Catadioptric reduction projection optical system, catadioptric optical system, and projection exposure method and apparatus
JP3339592B2 (en) * 1993-03-12 2002-10-28 株式会社ニコン Catadioptric projection optical system, and exposure method and apparatus
US5739964A (en) * 1995-03-22 1998-04-14 Etec Systems, Inc. Magnification correction for small field scanning
JP3352325B2 (en) 1996-05-21 2002-12-03 キヤノン株式会社 Scanning exposure apparatus and device manufacturing method using the same
US6631036B2 (en) * 1996-09-26 2003-10-07 Carl-Zeiss-Stiftung Catadioptric objective
US6169607B1 (en) 1996-11-18 2001-01-02 Xerox Corporation Printing black and white reproducible colored test documents
US6212334B1 (en) * 1998-05-02 2001-04-03 Cine Photo Tech, Inc. Supplementary optical system for a camera
KR20000034967A (en) 1998-11-30 2000-06-26 헨켈 카르스텐 Objective with crystal-lenses and projection-illuminating-device
DE19942281A1 (en) 1999-05-14 2000-11-16 Zeiss Carl Fa Projection lens has system filter screen, constrictions and bulges, negative lens, and positive lenses
JP2005233979A (en) 2000-02-09 2005-09-02 Nikon Corp Catadioptric system
US7218453B2 (en) * 2005-02-04 2007-05-15 Carl Zeiss Smt Ag Projection system, in particular for a microlithographic projection exposure apparatus

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5004331A (en) * 1989-05-03 1991-04-02 Hughes Aircraft Company Catadioptric projector, catadioptric projection system and process
US5636066A (en) * 1993-03-12 1997-06-03 Nikon Corporation Optical apparatus
US5488229A (en) * 1994-10-04 1996-01-30 Excimer Laser Systems, Inc. Deep ultraviolet microlithography system
EP0737878A2 (en) * 1995-04-12 1996-10-16 State Of Israel Ministry Of Defence Rafael Armament Development Authority Catadioptric optics for staring array detector system
US5717518A (en) * 1996-07-22 1998-02-10 Kla Instruments Corporation Broad spectrum ultraviolet catadioptric imaging system
DE19639586A1 (en) * 1996-09-26 1998-04-02 Zeiss Carl Fa Catadioptric microlithography reduction lens

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7859748B2 (en) 2000-01-14 2010-12-28 Carl Zeiss Smt Gmbh Microlithographic reduction projection catadioptric objective
US7136234B2 (en) 2000-09-12 2006-11-14 Kla-Tencor Technologies Corporation Broad band DUV, VUV long-working distance catadioptric imaging system
US6842298B1 (en) * 2000-09-12 2005-01-11 Kla-Tencor Technologies Corporation Broad band DUV, VUV long-working distance catadioptric imaging system
US7030965B2 (en) 2000-10-23 2006-04-18 Nikon Corporation Catadioptric system and exposure device having this system
US7679842B2 (en) 2003-02-21 2010-03-16 Kla-Tencor Technologies Corporation High performance catadioptric imaging system
US7180658B2 (en) 2003-02-21 2007-02-20 Kla-Tencor Technologies Corporation High performance catadioptric imaging system
US9081295B2 (en) 2003-05-06 2015-07-14 Nikon Corporation Catadioptric projection optical system, exposure apparatus, and exposure method
US7348575B2 (en) 2003-05-06 2008-03-25 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
CN101216682A (en) * 2003-05-06 2008-07-09 株式会社尼康 Projection optical system, exposure apparatus, and exposure method
US9933705B2 (en) 2003-05-06 2018-04-03 Nikon Corporation Reduction projection optical system, exposure apparatus, and exposure method
US9606443B2 (en) 2003-05-06 2017-03-28 Nikon Corporation Reducing immersion projection optical system
US9500943B2 (en) 2003-05-06 2016-11-22 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US10156792B2 (en) 2003-05-06 2018-12-18 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US9846366B2 (en) * 2003-05-06 2017-12-19 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US9086635B2 (en) 2003-05-06 2015-07-21 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
EP2672307A3 (en) * 2003-05-06 2014-07-23 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
EP1480065A3 (en) * 2003-05-23 2006-05-10 Canon Kabushiki Kaisha Projection optical system, exposure apparatus, and device manufacturing method
WO2005031425A1 (en) * 2003-09-26 2005-04-07 Sagem Defense Securite Catadioptric system with high numerical aperture for microlithography
US7755839B2 (en) 2003-12-19 2010-07-13 Carl Zeiss Smt Ag Microlithography projection objective with crystal lens
US9772478B2 (en) 2004-01-14 2017-09-26 Carl Zeiss Smt Gmbh Catadioptric projection objective with parallel, offset optical axes
CN1965259B (en) * 2004-04-08 2011-04-13 卡尔蔡司Smt有限责任公司 Catadioptric projection objective
US8363315B2 (en) 2004-04-08 2013-01-29 Carl Zeiss Smt Gmbh Catadioptric projection objective with mirror group
US7446952B2 (en) 2004-04-08 2008-11-04 Carl Zeiss Smt Ag Catadioptric projection objective
WO2005098506A1 (en) * 2004-04-08 2005-10-20 Carl Zeiss Smt Ag Catadioptric projection objective
US9726979B2 (en) 2004-05-17 2017-08-08 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US10495980B2 (en) 2005-03-04 2019-12-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10495981B2 (en) 2005-03-04 2019-12-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10451973B2 (en) 2005-05-03 2019-10-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10488759B2 (en) 2005-05-03 2019-11-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7920338B2 (en) 2006-03-28 2011-04-05 Carl Zeiss Smt Gmbh Reduction projection objective and projection exposure apparatus including the same

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USRE41350E1 (en) 2010-05-25
DE60008834T2 (en) 2005-01-13
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TW559674B (en) 2003-11-01
KR100724784B1 (en) 2007-06-04
KR20010051043A (en) 2001-06-25
EP1098215B1 (en) 2004-03-10
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JP2001166210A (en) 2001-06-22
US6600608B1 (en) 2003-07-29

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