EP1602123A1 - Process to make nano-structurated emitters for incandescence light sources - Google Patents
Process to make nano-structurated emitters for incandescence light sourcesInfo
- Publication number
- EP1602123A1 EP1602123A1 EP03780542A EP03780542A EP1602123A1 EP 1602123 A1 EP1602123 A1 EP 1602123A1 EP 03780542 A EP03780542 A EP 03780542A EP 03780542 A EP03780542 A EP 03780542A EP 1602123 A1 EP1602123 A1 EP 1602123A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- emitter
- substrate
- process according
- alumina layer
- pores
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01K—ELECTRIC INCANDESCENT LAMPS
- H01K1/00—Details
- H01K1/02—Incandescent bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01K—ELECTRIC INCANDESCENT LAMPS
- H01K1/00—Details
- H01K1/02—Incandescent bodies
- H01K1/04—Incandescent bodies characterised by the material thereof
- H01K1/08—Metallic bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01K—ELECTRIC INCANDESCENT LAMPS
- H01K3/00—Apparatus or processes adapted to the manufacture, installing, removal, or maintenance of incandescent lamps or parts thereof
- H01K3/02—Manufacture of incandescent bodies
Definitions
- the present invention relates to a process to make a nano-structured emitter element for light sources, which can be led to incandescence through the passage of electric current.
- Metal components having nanometric surface structures or reliefs, arranged according to specific shapes or geometries, are currently used in some technological fields, such as micro electro-mechanical- systems o MEMS, so as to obtain diftractive optical arrangements, medical devices, microturbines, and so on.
- the present invention is based on the acknowledge-ment that nano-structured filaments can find important applications in the field of incandescence lamps.
- the present invention aims at suggesting a new process to make in a simple and economical way filaments or similar emitters for incandescence light sources, having nanometric reliefs or structures.
- Said aim is achieved according to the present invention by a process to make an emitter as referred to above, characterized in that it envisages the use of a layer made of anodized porous alumina as sacrificial element for the selective structuring of the emitter.
- alumina layer enables to obtain a plurality of reliefs on at least a surface of the emitter, or a plurality of cavities within the emitter. Said nanometric reliefs or cavities are ar- ranged on the emitter according to a predefined geometry.
- FIG. 1 is a schematic perspective view of a portion of a porous alumina film
- FIGS. 2-5 are schematic views showing some steps of a film-building process for an alumina film as the one shown in Figure 1;
- FIG. 6 is a schematic perspective view of a portion of a first nano-structured emitter as can be made according to the invention.
- FIG. 7 is a schematic perspective view of a portion of a second nano-structured emitter as can be made according to the invention.
- FIGS. 8, 9 and 10 are schematic sections showing three different possible implementations of the process according to the invention, as can be used to make a nano-structured emitter as shown in Figure 6;
- FIGS 11, 12 and 13 are schematic sections showing three different possible implementations of the process according to the invention, as can be used to make a nano-structured emitter as shown in Figure 7;
- - Figure 14 shows schematic sections of a further possible implementation of the process according to the invention, as can be used to make a nano-structured emitter as shown in Figure 6;
- FIG. 15 shows schematic sections of a further possible implementation of the process according to the invention, as can be used to make a nano-structured emitter as shown in Figure 7 ;
- FIG. 16 shows schematic sections of a further possible implementation of the process according to the invention, as can be used to make a nano-structured emitter as shown in Figure 6 ;
- FIG. 17 shows schematic sections of a further possible implementation of the process according to the invention, as can be used to make a nano-structured emitter as shown in Figure 7.
- the process according to the present invention envisages the use of a highly regular film made of anodized porous alumina as sacrificial element or template; depending on the case, said alumina layer is used directly to obtain the desired nano-structured emitter, or indirectly to make a further sacrificial element required to obtain the aforesaid emitter.
- Porous alumina films have attracted attention in the past for applications such as dielectric films in aluminum capacitors, films for the retention of organic coatings and for the protection of aluminum substrates.
- porous alumina can be ideally schematized as a network of hollow columns immersed in an alumina matrix.
- Porous alumina can be obtained by anodization of highly pure aluminum sheets or of aluminum films on substrates like glass, quartz, silicon, tungsten, and so on.
- Figure 1 shows by mere way of example a portion of a porous alumina film, globally referred to with number 1, obtained by anodic oxidation of an aluminum film on a convenient substrate, the latter being referred to with number 2.
- the alumina layer 1 comprises a series of basically hexagonal cells 3 -directly close to one another, each having a straight central hole forming a pore 4, basically perpendicular to the surface of the substrate 2.
- the end of each cell 3 placed on the substrate 2 has a closing -portion with basically hemispheric shape, all closing portions building together a non-porous part of the film 1, or barrier layer, referred to with number 5.
- the film 1 can be developed with a controlled morphology by suitably selecting the electrolyte and process physical and elec- trochemical parameters: in acid electrolytes (such as phosphoric acid, oxalic acid and sulfuric acid) and under suitable process conditions (voltage, current, stirring and temperature) , highly regular porous films can be obtained.
- acid electrolytes such as phosphoric acid, oxalic acid and sulfuric acid
- process conditions voltage, current, stirring and temperature
- the size and density of cells 3 the diameter of pores 4 and the height of film 1 can be varied; for instance the diameter of pores 4, which is typically of 50-500 nm, can be increased or decreased through chemical treatments .
- the first step when making a porous alumina film 1 is the deposition of an aluminum layer 6 onto the substrate 2, the latter being for instance made of silicon or tungsten. Said operation requires a deposit of highly pure materials with thicknesses of one micron to 30 microns. Preferred deposition techniques for the layer 3 are thermal evaporation via e-beam and sputtering.
- the step including the deposition of the aluminum layer 6 is followed by a step in which said layer is anodized.
- the anodization process of the layer 6 can be carried out by using different electrolytic solutions depending on the desired size and distance of pores 4.
- the configuration of the electrolytic cell is also important in order to obtain a correct distribution of the shape lines of the electric field with a corresponding uniformity of the anodic process.
- Figure 3 schematically shows the result of the first anodization of the aluminum layer 6 onto the sub- strate 2; as schematically pointed out, the alumina film 1A obtained through the first anodization of the layer 6 does not enable to obtain a regular structure.
- a highly regular structure such as the one referred to with number 1 in Figure 1
- Figure 4 schematically shows the substrate 2 after said etching step; iii) a second anodization of the part of alumina film 1A that has not been removed through etching.
- the etching step referred to in ii) is important so as to define on the residual alumina part 1A preferential areas for alumina growth in the second anodiza- tion step.
- a step involving a total or local removal of the barrier layer 5 is car- ried out.
- the barrier layer 5 insulates the alumina structure and protects the underlying substrate 2 : the reduction of said layer 5 is therefore fundamental so as to perform, if necessary, consecutive electrodeposi- tion processes requiring an electric contact, and etch- ing processes, in case three-dimensional nano- structures should be obtained directly on the substrate 2.
- the aforesaid process involving the removal or reduction of the barrier layer 5 can include two consecu- tive stages:
- the alumina film 1 generated through the process previously described is used as template for nano-structuring, i.e. as a base to make structures reproducing the same pattern of alumina.
- Figures 6 and 7 show in a partial and schematic way two filaments for incandescence light sources having the two types of structures referred to above, which can be carried out according to the invention;
- the filament referred to with number 10 in Figure 6 has the aforesaid negative structure, characterized by a base portion 11 from which the aforesaid columns referred to with number 12 start;
- the filament referred to with number 13 in Figure 7 has the aforesaid posi- tive structure, characterized by a body 14 in which the aforesaid cavities referred to with 15 are defined.
- the techniques suggested to make structured filaments 10, 13 as in Figures 6 and 7 can be quite different, and can include in particular additional tech- niques (such as evaporation, sputtering, Chemical Vapor Deposition, screen printing and electrodeposition) , subtractive techniques (etching) and ' intermediate techniques (anodization of metal underlying alumina) .
- additional tech- niques such as evaporation, sputtering, Chemical Vapor Deposition, screen printing and electrodeposition
- subtractive techniques etching
- ' intermediate techniques anodization of metal underlying alumina
- Figure 8 schematically shows some steps of a first implementation of the process according to the inven- tion, so as to make negative structures as the one of filament 10 in Figure 6.
- the first four steps of the process include at least a first and a second anodization of a corresponding aluminum layer on a suitable substrate, as previ- ously described with reference to Figures 2-5;
- the substrate 2 can be for instance made of silicon and the aluminum layer for the anodization processes can be deposited by sputtering or e-beam.
- the material to be nano-structured is deposited as a film onto alumina through sputtering; thus, as shown by way of example in part a) of Figure 8, the pores of alumina 1 are filled with the deposited material, tungsten for instance, referred to with number 20.
- alumina 1 and of its substrate 2 through etching, as shown in part b) of Figure 8, thus obtaining the desired filament 10 with negative nano-structure, here made of tungsten.
- Sputtering technique consists in depositing films of highly pure material 20 with a thickness of 1 to 30 micron, but does not enable to reproduce structures having a high aspect ratio in an ideal way; the implementation described above is therefore used when the diameter of alumina pores 4 is at its maximum.
- the deposition of material 20 can be performed through Chemical Vapor Deposition or CVD, which is regarded as the most suitable technique for making structures of highly pure or conveniently doped metal.
- the main feature of this technique is the use of a reaction chamber containing reducing gases, which enable metal penetration into the hollow pores of alumina and the deposit of a continuous layer onto the surface. This ensures a faithful repro- duction of high aspect ratio structures.
- this implementation consists in making negative structures, as the one of filament 10 in Figure 6; the implementation basically includes the same initial steps as those of the first implementation, as far as the deposition of the aluminum layer 6 onto the substrate 2 (Figure 2) , a first anodization ( Figure 3) and a subsequent etching ( Figure 4) are concerned.
- the second anodization ( Figure 5) is here performed in order to make a film 1 of thicker porous alumina than in the first implementation.
- the thick alumina film 1 is then taken off its support 2 and opened at its base, so as to remove the barrier layer previously referred to with number 5, in a known way.
- the resulting structure of film 1 without its barrier layer can be seen in part a) of Figure 9.
- the following step, as in part b) of Figure 9, consists in the thermal deposition, or deposition through sputtering, of a conductive metal film 21 onto alumina 1.
- a tungsten alloy 22 is then electrodeposited onto the structure thus obtained, as in part c) of Figure 9, which alloy fills the pores of alumina 1.
- alumina 1 and its metal film 21 thereto associated are then removed, thus obtaining the desired nano- structured filament 10 made of tungsten alloy, as can be seen in part d) of Figure 9.
- This implementation consists in making negative structures as the one of filament 10 in Figure 6 , with the same initial steps as those in previous implementations ( Figures 2-5) .
- the second anodization is here followed by a step in which a seri- graphic paste 23 is deposited onto porous alumina 1, so as to fill its pores.
- This implementation of the process according to the invention aims at making positive structures as the one of filament 13 of Figure 7, starting from a template obtained according to previous implementations.
- one of previous implementations is first used to obtain a substrate having the same structure as the one of filaments previously re- ferred to with number 10; onto said substrate, referred to with number 10A in part a) of Figure 11, is then deposited a layer of the material 24 required to obtain the final component, for instance tungsten, through sputtering or CVD, as shown in part b) of Figure 11; the material 24 thus covers the columns 12A of the aforesaid substrates 10A, which acts as a template.
- the substrate 10A is taken off through selective etching, so as to obtain the filament 13 with positive nano-porous structure, as can be seen in part d) of Figure 11, provided with corresponding cavities 15.
- the substrate 10A obtained according to the first three implementations described above, is not necessar- ily made of tungsten.
- a metal serigraphic paste 25 is deposited, as in parts a) and b) of Figure 12, which is then sintered, as in part c) of Figure 12.
- the substrate 10A is then taken off through selective etching, so as to obtain the filament
- this implementation of the process according to the invention aims at carrying out positive nano- structures as the one of the filament previously referred to with number 13, and includes the same initial steps as those shown in Figures 2-5, with the deposition of an aluminum layer 6 through sputtering or e- beam onto a tungsten substrate 2 ( Figure 2) , followed by a first anodization of aluminum 6 ( Figure 3) and an etching step ( Figure 4) , so as to provide the substrate 2 with preferential areas for the growth of alumina 1 during the second anodization ( Figure 5) .
- the barrier layer 5 of alumina 1 is then removed, thus opening the pores 4, as can be seen in part a) of Figure 13.
- This is followed by a step of .Reactive Jon Etching (RIE) which allows to "dig" selectively in the substrate 2 on the open bottom of the pores 4 of alu- mina 1, as can be seen in part b) of Figure 13.
- RIE Reactive Jon Etching
- the residual alumina 1 is eventually removed, so that the tungsten substrate forms a body 14 with regular nanometric cavities 15, thus obtaining the desired filament 13.
- the Reactive Ion Etching step can be replaced, if necessary, by a selective wet etching step or by an electrochemical etching step.
- Sixth implementation This implementation of the process aims at making negative structures as the one of filament 10 of Figure 6 and its initial steps are the same as in previous implementation. Therefore, after obtaining a regular film of alumina 1 on the corresponding tungsten substrate 2 ( Figure 5) , the barrier layer 5 is removed, so as to open the pores 4 on the substrate 2, as can be seen in part a) of Figure 14.
- the ' process 6 first ' consists in preparing the concentrated electrolytic solution for tungsten deposition into the pores 4 of alumina 1; the electrolyte is very important for correctly filling the pores, since it ensures a sufficient concentration of ions in solution.
- the pulsed current step enables to carry out the copy of structures with high aspect ratio, and sequentially includes i) the deposition of the tungsten alloy 26 by ap- plying a positive current; this results in a given impoverishment of the solution close to the cathode made of alumina 1 and its substrate 2 ; ii) a relax time, without current application, so as to let the solution be re-mixed close to the cathode; iii) the application of negative current, designed to remove a part of the alloy 26 previously deposited onto the cathode, thus enabling a better leveling of deposited surface.
- Steps I) , ii) and iii) are cyclically repeated until the desired structure is obtained.
- This implementation aims at making positive nano- structures as the one of filament 13 starting from a substrate with negative structure, obtained through previous implementation, though not necessarily made of tungsten; the aforesaid substrate with negative struc- ture acting as template is referred to with number 10A in part a) of Figure 15.
- a tungsten layer 27 is deposited onto said substrate 10A through CVD or sputtering, as can be seen in part b) of Figure 15. This is followed by a selective etching step, so as to remove the substrate 10A, thus obtaining the desired filament 13 with tungsten nano- porous structure, as can be seen in part c) of Figure 15.
- This implementation aims at making negative nano- structures as the one of filament 10 of Figure 6, and its initial steps are the same as those shown in Figures 2-5, with the deposition of an aluminum layer 6 through sputtering or e-beam onto a tungsten substrate 2 (Figure 2) , followed by a first anodization of alumi- num 6 ( Figure 3) and an etching step ( Figure 4) , so as to provide the substrate 2 with preferential areas for the growth of alumina 1 during the second anodization ( Figure 5) .
- This is followed by a step including the anodization of the tungsten substrate 2 , so as to induce the localized growth of the latter, which occurs below the pores 4 of alumina 1.
- Said step, as shown in part a) of Figure 16 basically includes the formation of surface reliefs 2A of the substrate 2, which first cause the barrier layer 5 of alumina 1 to break, and then keep on growing within alumina pores 4.
- this implementation is based on a typical feature of some metals, such as tungsten and tantalum, which anodize under the same chemical and electric conditions as aluminum; as mentioned above, said anodization occurs in the lower portion of the pores 4 of alumina 1, thus directly structuring the surface of the substrate 2.
- Ninth implementation This implementation aims at carrying out positive nano-porous structures as the one of filament 13 of Figure 7 starting from a substrate having a negative structure as the one obtained through previous implementation; said substrate acting as template is re- ferred to with number 10A in part a) of Figure 17.
- a tungsten alloy 27 is deposited onto said substrate 10A through electrochemical deposition, CVD or sputtering, as shown in part b) of Figure 17.
- the substrate 10A is then removed through selective etching, thus obtaining the desired filament 13 with positive or nano-porous structure.
- the process according to the invention includes the use of an alumina layer 1 which, depending on the case, directly acts as template so as to obtain the desired filament with nanometric structure 10, or which is used to obtain a template 10A for the subsequent structuring of the desired filament 13.
- the invention proves particularly advantageous for the structuring of filaments for incandescence light sources, and more generally of components also under a different form with respect to a filament which can be led to incandescence through a passage of electric cur- rent.
- an emitter made according to the invention can also be formed by plurality of layers structured by means of porous alumina according to the above describes techniques, in the form of superimposed structured layers .
- the described process enables for instance to easily define, on one or more surfaces of a filament, for instance made of tungsten, an antireflection micro- structure comprising a plurality of microreliefs, so as to maximize electromagnetic emission from filament into visible spectrum.
- the invention can be advantageously applied also to make other photon crystal structures, i.e. in structures made of tungsten or other suitable materials characterized by the presence of series of regular microcavities, which contain a medium with a refractive index differing from the one of tungsten or other material used.
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT000167A ITTO20030167A1 (en) | 2003-03-06 | 2003-03-06 | PROCEDURE FOR THE CREATION OF NANO-STRUCTURED EMITTERS FOR INCANDESCENT LIGHT SOURCES. |
ITTO20030167 | 2003-03-06 | ||
PCT/IB2003/006338 WO2004079774A1 (en) | 2003-03-06 | 2003-12-23 | Process to make nano-structurated emitters for incandescence light sources |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1602123A1 true EP1602123A1 (en) | 2005-12-07 |
EP1602123B1 EP1602123B1 (en) | 2007-01-24 |
Family
ID=32948215
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP03780542A Expired - Lifetime EP1602123B1 (en) | 2003-03-06 | 2003-12-23 | Process to make nano-structurated emitters for incandescence light sources |
EP04717716A Expired - Lifetime EP1604052B1 (en) | 2003-03-06 | 2004-03-05 | Process to make nano-structurated components |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP04717716A Expired - Lifetime EP1604052B1 (en) | 2003-03-06 | 2004-03-05 | Process to make nano-structurated components |
Country Status (10)
Country | Link |
---|---|
US (2) | US7322871B2 (en) |
EP (2) | EP1602123B1 (en) |
JP (2) | JP4398873B2 (en) |
CN (2) | CN1692469B (en) |
AT (2) | ATE352864T1 (en) |
AU (1) | AU2003288694A1 (en) |
DE (2) | DE60311531T2 (en) |
ES (1) | ES2279204T3 (en) |
IT (1) | ITTO20030167A1 (en) |
WO (2) | WO2004079774A1 (en) |
Families Citing this family (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100940530B1 (en) * | 2003-01-17 | 2010-02-10 | 삼성전자주식회사 | Silicon optoelectronic device manufacturing method and Silicon optoelectronic device manufactured by thereof and Image input and/or output apparatus applied it |
ITTO20030166A1 (en) * | 2003-03-06 | 2004-09-07 | Fiat Ricerche | HIGH EFFICIENCY EMITTER FOR INCANDESCENT LIGHT SOURCES. |
KR101190657B1 (en) | 2003-04-21 | 2012-10-15 | 삼성전자주식회사 | Manufacturing method of self-ordered nanochannel-array and manufacturing method of nano dot using the nanochannel-array |
JP2005305634A (en) * | 2004-03-26 | 2005-11-04 | Fujitsu Ltd | Nano hole structure and its manufacturing method, stamper and its manufacturing method, magnetic recording medium and its manufacturing method, and magnetic recorder and magnetic recording method |
JP2006075942A (en) * | 2004-09-09 | 2006-03-23 | Fujitsu Ltd | Laminated layer structural body, magnetic recording medium and manufacturing method for this medium, apparatus and method for magnetic recording, and device using this laminated layer structural body |
KR20070060151A (en) * | 2004-10-04 | 2007-06-12 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | Microdischarge devices with encapsulated electrodes and method of making |
JP4368384B2 (en) | 2004-12-03 | 2009-11-18 | シャープ株式会社 | Antireflection material, optical element, display device, stamper manufacturing method, and antireflection material manufacturing method using stamper |
WO2006073117A1 (en) * | 2005-01-07 | 2006-07-13 | Kyoto University | Optical sensor and process for producing the same |
JP2009503564A (en) * | 2005-07-22 | 2009-01-29 | クアルコム,インコーポレイテッド | Support structure for MEMS device and method thereof |
EP1785748A1 (en) * | 2005-11-10 | 2007-05-16 | C.R.F. Società Consortile per Azioni | Anti-reflection nano-metric structure based on anodised porous alumina and method for production thereof |
US20070116934A1 (en) * | 2005-11-22 | 2007-05-24 | Miller Scott M | Antireflective surfaces, methods of manufacture thereof and articles comprising the same |
US20070125652A1 (en) * | 2005-12-02 | 2007-06-07 | Buckley Paul W | Electroform, methods of making electroforms, and products made from electroforms |
US7722421B2 (en) * | 2006-03-31 | 2010-05-25 | General Electric Company | High temperature ceramic composite for selective emission |
US7851985B2 (en) * | 2006-03-31 | 2010-12-14 | General Electric Company | Article incorporating a high temperature ceramic composite for selective emission |
US20070228986A1 (en) * | 2006-03-31 | 2007-10-04 | General Electric Company | Light source incorporating a high temperature ceramic composite for selective emission |
US8044567B2 (en) | 2006-03-31 | 2011-10-25 | General Electric Company | Light source incorporating a high temperature ceramic composite and gas phase for selective emission |
US8679630B2 (en) * | 2006-05-17 | 2014-03-25 | Purdue Research Foundation | Vertical carbon nanotube device in nanoporous templates |
WO2008065223A1 (en) * | 2006-11-27 | 2008-06-05 | Universitat Autonoma De Barcelona | Method for manufacturing a nanothread structure |
US7781977B2 (en) * | 2006-12-20 | 2010-08-24 | General Electric Company | High temperature photonic structure for tungsten filament |
WO2008082421A1 (en) * | 2007-01-05 | 2008-07-10 | Sabic Innovative Plastics Ip B.V. | Antireflective surfaces, methods of manufacture thereof and articles comprising the same |
US9487877B2 (en) * | 2007-02-01 | 2016-11-08 | Purdue Research Foundation | Contact metallization of carbon nanotubes |
US7786660B2 (en) * | 2007-02-06 | 2010-08-31 | General Electric Company | Highly emissive cavity for discharge lamp and method and material relating thereto |
US7719752B2 (en) | 2007-05-11 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same |
US20090160314A1 (en) * | 2007-12-20 | 2009-06-25 | General Electric Company | Emissive structures and systems |
ES2336745B1 (en) * | 2008-02-26 | 2011-04-08 | Universidad Autonoma De Madrid | PROCEDURE FOR OBTAINING MEMBRANES WITH ORGANIZED POROUS STRUCTURE. |
US8715981B2 (en) * | 2009-01-27 | 2014-05-06 | Purdue Research Foundation | Electrochemical biosensor |
US8138675B2 (en) * | 2009-02-27 | 2012-03-20 | General Electric Company | Stabilized emissive structures and methods of making |
US8872154B2 (en) * | 2009-04-06 | 2014-10-28 | Purdue Research Foundation | Field effect transistor fabrication from carbon nanotubes |
US8563086B2 (en) | 2009-07-22 | 2013-10-22 | Korea Institute Research and Business Foundation | Nano pattern formation |
US8592732B2 (en) | 2009-08-27 | 2013-11-26 | Korea University Research And Business Foundation | Resistive heating device for fabrication of nanostructures |
JP5744407B2 (en) * | 2010-02-23 | 2015-07-08 | キヤノン株式会社 | Manufacturing method of microstructure |
EP2617069B1 (en) * | 2010-09-14 | 2014-12-03 | Commissariat à l'Énergie Atomique et aux Énergies Alternatives | Nanowire-based optoelectronic device for light emission |
WO2012054043A1 (en) | 2010-10-21 | 2012-04-26 | Hewlett-Packard Development Company, L.P. | Nano-structure and method of making the same |
EP2630276A4 (en) * | 2010-10-21 | 2017-04-19 | Hewlett-Packard Development Company, L.P. | Method of forming a nano-structure |
WO2012054044A1 (en) * | 2010-10-21 | 2012-04-26 | Hewlett-Packard Development Company, L. P. | Method of forming a micro-structure |
US20170267520A1 (en) | 2010-10-21 | 2017-09-21 | Hewlett-Packard Development Company, L.P. | Method of forming a micro-structure |
WO2012054045A1 (en) | 2010-10-21 | 2012-04-26 | Hewlett-Packard Development Company, L.P. | Method of forming a nano-structure |
TWI472630B (en) * | 2010-12-02 | 2015-02-11 | Hon Hai Prec Ind Co Ltd | Aluminium productor and method for making same |
TWI471431B (en) * | 2010-12-06 | 2015-02-01 | Hon Hai Prec Ind Co Ltd | Aluminium productor and method for making same |
US8659816B2 (en) | 2011-04-25 | 2014-02-25 | Qualcomm Mems Technologies, Inc. | Mechanical layer and methods of making the same |
TW201310081A (en) * | 2011-08-25 | 2013-03-01 | Nat Univ Tsing Hua | Micro and nano hybrid structure and producing method thereof |
JP5851165B2 (en) * | 2011-09-08 | 2016-02-03 | 公益財団法人神奈川科学技術アカデミー | Method for forming microstructure and method for producing porous alumina composite |
JP2013134875A (en) * | 2011-12-26 | 2013-07-08 | Stanley Electric Co Ltd | Filament lamp and filament |
KR20140069925A (en) * | 2012-11-30 | 2014-06-10 | 에스케이하이닉스 주식회사 | Semiconductor memory device and Manufacturing method thereof |
CN103043600B (en) * | 2012-12-13 | 2015-03-25 | 中国科学院物理研究所 | Preparation method of three-dimensional self-supporting micro-nano functional structure based on thin film material |
JP6371075B2 (en) * | 2014-02-21 | 2018-08-08 | スタンレー電気株式会社 | filament |
JP6797535B2 (en) * | 2016-03-07 | 2020-12-09 | 株式会社アドバンテスト | Manufacturing method of anisotropic conductive film and anisotropic conductive film |
JP6727046B2 (en) * | 2016-07-07 | 2020-07-22 | 東京都公立大学法人 | Pillar array structure manufacturing method |
US10761428B2 (en) | 2018-08-28 | 2020-09-01 | Saudi Arabian Oil Company | Fabricating calcite nanofluidic channels |
US11312107B2 (en) * | 2018-09-27 | 2022-04-26 | Apple Inc. | Plugging anodic oxides for increased corrosion resistance |
US10926227B2 (en) * | 2018-12-03 | 2021-02-23 | Saudi Arabian Oil Company | Fabricating calcite nanofluidic channels |
EP3987333A4 (en) * | 2019-06-18 | 2023-07-26 | Applied Materials, Inc. | Air-spaced encapsulated dielectric nanopillars for flat optical devices |
US11787993B1 (en) | 2022-03-28 | 2023-10-17 | Saudi Arabian Oil Company | In-situ foamed gel for lost circulation |
US11913319B2 (en) | 2022-06-21 | 2024-02-27 | Saudi Arabian Oil Company | Sandstone stimulation |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5079473A (en) | 1989-09-08 | 1992-01-07 | John F. Waymouth Intellectual Property And Education Trust | Optical light source device |
US5600200A (en) * | 1992-03-16 | 1997-02-04 | Microelectronics And Computer Technology Corporation | Wire-mesh cathode |
US5385114A (en) * | 1992-12-04 | 1995-01-31 | Milstein; Joseph B. | Photonic band gap materials and method of preparation thereof |
DE69515245T2 (en) * | 1994-10-05 | 2000-07-13 | Matsushita Electric Ind Co Ltd | Electron emission cathode; an electron emission device, a flat display device, a thermoelectric cooling device provided therewith, and a method for producing this electron emission cathode |
US5747180A (en) * | 1995-05-19 | 1998-05-05 | University Of Notre Dame Du Lac | Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays |
CN1125891C (en) * | 1996-08-26 | 2003-10-29 | 日本电信电话株式会社 | Method of manufacturing porous anodized alumina film |
JP3902883B2 (en) * | 1998-03-27 | 2007-04-11 | キヤノン株式会社 | Nanostructure and manufacturing method thereof |
US5998298A (en) * | 1998-04-28 | 1999-12-07 | Sandia Corporation | Use of chemical-mechanical polishing for fabricating photonic bandgap structures |
JP3020155B2 (en) * | 1998-06-12 | 2000-03-15 | 東京大学長 | Method for producing needle-shaped diamond array structure |
JP2000243247A (en) * | 1999-02-19 | 2000-09-08 | Canon Inc | Manufacture of electron emission element |
JP3576859B2 (en) * | 1999-03-19 | 2004-10-13 | 株式会社東芝 | Light emitting device and system using the same |
JP4536866B2 (en) * | 1999-04-27 | 2010-09-01 | キヤノン株式会社 | Nanostructure and manufacturing method thereof |
JP3667188B2 (en) * | 2000-03-03 | 2005-07-06 | キヤノン株式会社 | Electron beam excitation laser device and multi-electron beam excitation laser device |
DE10154756C1 (en) * | 2001-07-02 | 2002-11-21 | Alcove Surfaces Gmbh | Use of a surface layer or covering layer provided with open hollow chambers by anodic oxidation for structuring a surface of a cast part and/or workpiece |
US6607673B2 (en) * | 2000-05-17 | 2003-08-19 | The University Of Tokyo | Method for manufacturing a diamond cylinder array having dents therein |
JP2003016921A (en) * | 2000-09-20 | 2003-01-17 | Canon Inc | Structure, electron emission element, image forming device, and manufacturing method thereof |
US6709929B2 (en) * | 2001-06-25 | 2004-03-23 | North Carolina State University | Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates |
US6611085B1 (en) * | 2001-08-27 | 2003-08-26 | Sandia Corporation | Photonically engineered incandescent emitter |
ITTO20020033A1 (en) * | 2002-01-11 | 2003-07-11 | Fiat Ricerche | ELECTRO-LUMINESCENT DEVICE. |
US7211143B2 (en) * | 2002-12-09 | 2007-05-01 | The Regents Of The University Of California | Sacrificial template method of fabricating a nanotube |
-
2003
- 2003-03-06 IT IT000167A patent/ITTO20030167A1/en unknown
- 2003-12-23 EP EP03780542A patent/EP1602123B1/en not_active Expired - Lifetime
- 2003-12-23 AT AT03780542T patent/ATE352864T1/en not_active IP Right Cessation
- 2003-12-23 CN CN2003801006240A patent/CN1692469B/en not_active Expired - Fee Related
- 2003-12-23 DE DE60311531T patent/DE60311531T2/en not_active Expired - Lifetime
- 2003-12-23 JP JP2004569054A patent/JP4398873B2/en not_active Expired - Fee Related
- 2003-12-23 ES ES03780542T patent/ES2279204T3/en not_active Expired - Lifetime
- 2003-12-23 WO PCT/IB2003/006338 patent/WO2004079774A1/en active IP Right Grant
- 2003-12-23 AU AU2003288694A patent/AU2003288694A1/en not_active Abandoned
- 2003-12-23 US US10/523,214 patent/US7322871B2/en not_active Expired - Fee Related
-
2004
- 2004-03-05 DE DE602004028102T patent/DE602004028102D1/en not_active Expired - Lifetime
- 2004-03-05 US US10/546,896 patent/US20060177952A1/en not_active Abandoned
- 2004-03-05 AT AT04717716T patent/ATE474324T1/en not_active IP Right Cessation
- 2004-03-05 JP JP2006506303A patent/JP2006520697A/en not_active Withdrawn
- 2004-03-05 WO PCT/IB2004/000639 patent/WO2004079056A2/en active Application Filing
- 2004-03-05 EP EP04717716A patent/EP1604052B1/en not_active Expired - Lifetime
- 2004-03-05 CN CNA2004800059090A patent/CN1756861A/en active Pending
Non-Patent Citations (1)
Title |
---|
See references of WO2004079774A1 * |
Also Published As
Publication number | Publication date |
---|---|
US7322871B2 (en) | 2008-01-29 |
EP1602123B1 (en) | 2007-01-24 |
CN1692469A (en) | 2005-11-02 |
ES2279204T3 (en) | 2007-08-16 |
JP2006520697A (en) | 2006-09-14 |
DE60311531T2 (en) | 2007-06-06 |
EP1604052B1 (en) | 2010-07-14 |
JP2006514413A (en) | 2006-04-27 |
ATE474324T1 (en) | 2010-07-15 |
ATE352864T1 (en) | 2007-02-15 |
AU2003288694A1 (en) | 2004-09-28 |
DE60311531D1 (en) | 2007-03-15 |
WO2004079056A3 (en) | 2005-01-20 |
US20060177952A1 (en) | 2006-08-10 |
WO2004079056A2 (en) | 2004-09-16 |
JP4398873B2 (en) | 2010-01-13 |
US20060103286A1 (en) | 2006-05-18 |
DE602004028102D1 (en) | 2010-08-26 |
WO2004079056A8 (en) | 2005-10-27 |
EP1604052A2 (en) | 2005-12-14 |
ITTO20030167A1 (en) | 2004-09-07 |
CN1756861A (en) | 2006-04-05 |
CN1692469B (en) | 2010-09-08 |
WO2004079774A1 (en) | 2004-09-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1602123B1 (en) | Process to make nano-structurated emitters for incandescence light sources | |
US7214418B2 (en) | Structure having holes and method for producing the same | |
US7267859B1 (en) | Thick porous anodic alumina films and nanowire arrays grown on a solid substrate | |
JP4146978B2 (en) | Manufacturing method of structure having pores, and structure manufactured by the manufacturing method | |
US7319069B2 (en) | Structure having pores, device using the same, and manufacturing methods therefor | |
US6541386B2 (en) | Method for producing a structure with narrow pores | |
JP4221389B2 (en) | Method of manufacturing field emission emitter electrode using self-assembly of carbon nanotube and field emission emitter electrode manufactured thereby | |
JPH11200090A (en) | Nanostructural body and its production | |
JP2806978B2 (en) | Manufacturing method of cold cathode field emission device | |
EP0913850B1 (en) | Narrow titanium-containing wire, process for producing narrow titanium-containing wire, structure, and electron-emitting device | |
JP2008223073A (en) | Porous nano-structure and manufacturing method therefor | |
US7288203B2 (en) | Process for producing structure, process for producing magnetic recording medium, and process for producing molded product | |
JP4136730B2 (en) | Structure having pores and method for producing the same | |
US20070161313A1 (en) | Method for manufacturing field emission cathode | |
KR100434282B1 (en) | Composition Method for Carbonnanotube | |
JP2001213700A (en) | Nano-structure and its manufacturing method | |
Holland et al. | Large area gridded field emitter arrays using anodised aluminium | |
PADERI et al. | VERFAHREN ZUR HERSTELLUNG VON NANOSTRUKTURIERTEN GLÜHKÖRPERN ZUR LICHTERZEUGUNG PROCEDE DE FABRICATION D’EMETTEURS NANO-STRUCTURES POUR SOURCES DE LUMIERE INCANDESCENTE | |
KR100649587B1 (en) | Method For Manufacturing Field Emitter Array | |
JP4625955B2 (en) | Carbon tube and carbon tube manufacturing method | |
EP1932806A1 (en) | Method for manufacturing carbon nanotubes with metal cores |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20041210 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR |
|
AX | Request for extension of the european patent |
Extension state: AL LT LV MK |
|
DAX | Request for extension of the european patent (deleted) | ||
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
GRAS | Grant fee paid |
Free format text: ORIGINAL CODE: EPIDOSNIGR3 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20070124 Ref country code: NL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20070124 Ref country code: DK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20070124 Ref country code: LI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20070124 Ref country code: FI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20070124 Ref country code: CH Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20070124 Ref country code: AT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20070124 |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: FG4D |
|
REG | Reference to a national code |
Ref country code: SE Ref legal event code: TRGR |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: EP |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: FG4D |
|
REF | Corresponds to: |
Ref document number: 60311531 Country of ref document: DE Date of ref document: 20070315 Kind code of ref document: P |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: BG Free format text: LAPSE BECAUSE OF EXPIRATION OF PROTECTION Effective date: 20070425 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: PT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20070625 |
|
ET | Fr: translation filed | ||
REG | Reference to a national code |
Ref country code: CH Ref legal event code: PL |
|
NLV1 | Nl: lapsed or annulled due to failure to fulfill the requirements of art. 29p and 29m of the patents act | ||
REG | Reference to a national code |
Ref country code: ES Ref legal event code: FG2A Ref document number: 2279204 Country of ref document: ES Kind code of ref document: T3 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20070124 |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
26N | No opposition filed |
Effective date: 20071025 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: BE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20070124 Ref country code: RO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20070124 Ref country code: CZ Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20070124 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20070425 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: MC Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20071231 |
|
EUG | Se: european patent has lapsed | ||
GBPC | Gb: european patent ceased through non-payment of renewal fee |
Effective date: 20071223 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20071224 Ref country code: SE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20071224 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20071223 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: EE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20070124 |
|
REG | Reference to a national code |
Ref country code: ES Ref legal event code: FD2A Effective date: 20071224 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: ES Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20071224 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: CY Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20070124 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LU Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20071223 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: HU Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20070725 Ref country code: TR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20070124 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 13 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 14 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 15 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: FR Payment date: 20171226 Year of fee payment: 15 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: IT Payment date: 20171212 Year of fee payment: 15 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DE Payment date: 20180228 Year of fee payment: 15 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R119 Ref document number: 60311531 Country of ref document: DE |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: FR Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20181231 Ref country code: DE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20190702 Ref country code: IT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20181223 |