EP1620880A4 - Semiconductor substrate and manufacturing method therefor - Google Patents
Semiconductor substrate and manufacturing method thereforInfo
- Publication number
- EP1620880A4 EP1620880A4 EP04730068A EP04730068A EP1620880A4 EP 1620880 A4 EP1620880 A4 EP 1620880A4 EP 04730068 A EP04730068 A EP 04730068A EP 04730068 A EP04730068 A EP 04730068A EP 1620880 A4 EP1620880 A4 EP 1620880A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- manufacturing
- semiconductor substrate
- method therefor
- therefor
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003128917A JP4532846B2 (en) | 2003-05-07 | 2003-05-07 | Manufacturing method of semiconductor substrate |
PCT/JP2004/006178 WO2004100233A1 (en) | 2003-05-07 | 2004-04-28 | Semiconductor substrate and manufacturing method therefor |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1620880A1 EP1620880A1 (en) | 2006-02-01 |
EP1620880A4 true EP1620880A4 (en) | 2008-08-06 |
Family
ID=33432059
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP04730068A Withdrawn EP1620880A4 (en) | 2003-05-07 | 2004-04-28 | Semiconductor substrate and manufacturing method therefor |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1620880A4 (en) |
JP (1) | JP4532846B2 (en) |
KR (1) | KR100725141B1 (en) |
CN (2) | CN101145509A (en) |
TW (1) | TWI259514B (en) |
WO (1) | WO2004100233A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5128781B2 (en) * | 2006-03-13 | 2013-01-23 | 信越化学工業株式会社 | Manufacturing method of substrate for photoelectric conversion element |
CN108231695A (en) * | 2016-12-15 | 2018-06-29 | 上海新微技术研发中心有限公司 | Composite substrate and method for manufacturing the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0961312A2 (en) * | 1998-05-15 | 1999-12-01 | Canon Kabushiki Kaisha | SOI Substrate formed by bonding |
EP0994503A1 (en) * | 1998-10-16 | 2000-04-19 | Commissariat A L'energie Atomique | Structure comprising a thin layer composed of material containing conductive and isolation regions and method for manufacturing the structure |
US20020072130A1 (en) * | 2000-08-16 | 2002-06-13 | Zhi-Yuan Cheng | Process for producing semiconductor article using graded expital growth |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0794409A (en) * | 1993-09-20 | 1995-04-07 | Fujitsu Ltd | Formation of iii-v compound semiconductor thin film |
JP3879173B2 (en) * | 1996-03-25 | 2007-02-07 | 住友電気工業株式会社 | Compound semiconductor vapor deposition method |
-
2003
- 2003-05-07 JP JP2003128917A patent/JP4532846B2/en not_active Expired - Fee Related
-
2004
- 2004-04-27 TW TW093111750A patent/TWI259514B/en not_active IP Right Cessation
- 2004-04-28 WO PCT/JP2004/006178 patent/WO2004100233A1/en active Application Filing
- 2004-04-28 EP EP04730068A patent/EP1620880A4/en not_active Withdrawn
- 2004-04-28 KR KR1020057020457A patent/KR100725141B1/en not_active IP Right Cessation
- 2004-04-28 CN CNA2007101812355A patent/CN101145509A/en active Pending
- 2004-04-28 CN CNB2004800006869A patent/CN100358104C/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0961312A2 (en) * | 1998-05-15 | 1999-12-01 | Canon Kabushiki Kaisha | SOI Substrate formed by bonding |
EP0994503A1 (en) * | 1998-10-16 | 2000-04-19 | Commissariat A L'energie Atomique | Structure comprising a thin layer composed of material containing conductive and isolation regions and method for manufacturing the structure |
US20020072130A1 (en) * | 2000-08-16 | 2002-06-13 | Zhi-Yuan Cheng | Process for producing semiconductor article using graded expital growth |
Non-Patent Citations (2)
Title |
---|
See also references of WO2004100233A1 * |
VENKATASUBRAMANIAN R: "HIGH-QUALITY EUTECTIC-METAL-BONDED ALGAAS-GAAS THIN FILMS ON SI SUBSTRATES", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, vol. 60, no. 7, 17 February 1992 (1992-02-17), pages 886 - 888, XP000290448, ISSN: 0003-6951 * |
Also Published As
Publication number | Publication date |
---|---|
JP2004335693A (en) | 2004-11-25 |
KR20060005406A (en) | 2006-01-17 |
WO2004100233A1 (en) | 2004-11-18 |
CN100358104C (en) | 2007-12-26 |
CN1698180A (en) | 2005-11-16 |
JP4532846B2 (en) | 2010-08-25 |
TW200425261A (en) | 2004-11-16 |
CN101145509A (en) | 2008-03-19 |
TWI259514B (en) | 2006-08-01 |
KR100725141B1 (en) | 2007-06-07 |
EP1620880A1 (en) | 2006-02-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20050119 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): BE DE FR GB IT NL |
|
DAX | Request for extension of the european patent (deleted) | ||
RBV | Designated contracting states (corrected) |
Designated state(s): BE DE FR GB IT NL |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 20080703 |
|
17Q | First examination report despatched |
Effective date: 20091218 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN |
|
18W | Application withdrawn |
Effective date: 20100413 |