EP1748276A1

EP1748276A1 - Interference measurement apparatus

Info

Publication number: EP1748276A1
Application number: EP06253842A
Authority: EP
Inventors: Hidejiro c/o Canon Kabushiki Kaisha Kadowaki; Ko c/o Canon Kabushiki Kaisha Ishizuka; Shigeki c/o Canon Kabushiki Kaisha Kato
Original assignee: Canon Inc
Current assignee: Canon Inc
Priority date: 2005-07-28
Filing date: 2006-07-21
Publication date: 2007-01-31
Anticipated expiration: 2026-07-21
Also published as: JP2007033318A; DE602006002448D1; JP4804058B2; US7554671B2; EP1748276B1; US20070024863A1

Abstract

A first beam having high coherence and a second beam having low coherence and having a central wavelength difference from that of the first beam are multiplexed onto the same optical axis. First and second multiplexed beams obtained by beam splitting are emitted at a measurement reflection plane and a reference plane, respectively. The reflected first and second multiplexed beams are multiplexed and interfere with each other. The interference generates a first interference signal that is obtained from the first beams at the interference unit and that relates to information on the distance to the measurement reflection plane and a second interference signal that is obtained from the second beams. The first and second interference signals are used to carry out calculations for determining the position of a measurement origin for the measurement reflection plane.

Description

BACKGROUND OF THE INVENTION

Field of the Invention

The present invention relates to an interference measurement apparatus capable of noncontact detection of position change information of an object. It relates particularly, though not exclusively, to an interference measurement apparatus suitable for detecting absolute position shift information by adding a position as an origin when detecting displacement information.

Description of the Related Art

For a measurement apparatus capable of measuring length with accuracy and resolution of the order of nanometers, a laser interference measurement apparatus, such as a Michelson interference apparatus using a laser beam, is often used.
Since an interference wave generated by the displacement of the object being measured is a sine wave, a laser interference measurement apparatus can count the wave number of the sine wave and detect the phase of the sine wave to measure the amount of displacement to an accuracy and resolution of the order of nanometers.
Japanese Patent Laid-Open No. 2001-76325 describes an apparatus configured to obtain displacement information (position information) of a measurement plane by using an interference signal obtained by a Michelson interference apparatus.
The displacement detection apparatus described in Japanese Patent Laid-Open No. 2001-76325 uses optical interference to detect displacement information of a measurement plane provided on a magnetic head arm.
More specifically, a probe instruction arm for alignment is provided coaxial to the rotational shaft of the magnetic head arm.
On the probe instruction arm, an optical position detection sensor unit configured to detect whether or not the end surface (i.e., measurement plane) of the magnetic head arm is at a desirable position.
The optical position detection sensor unit includes a detection system configured to align the side surface of the magnetic head arm by using an interference signal. The detection system includes a quarter wave plate, a phase diffraction grating, and light-receiving element.
In addition, a focus detection optical system including a polarizing plate, a condenser lens, and a quadripartite sensor is provided to detect position information on the measurement plane in the direction of the optical axis.
The output signal of an interference measurement apparatus obtained by carrying out laser interference is a sine wave. Thus, measurement can be carried out at a resolution on the order of nanometers based on the wave number and phase. However, the absolute position cannot be determined merely by displacement. Therefore, to obtain absolute displacement information of the object being measured, an additional reference point (i.e., origin) must be provided and the relative position of the object with respect to this reference point must be determined.
In this case, to determine the accurate absolute position, the reference point (i.e., origin) must be provided at an accuracy surpassing the wavelength (0.4 µm for the example above) of the output sine wave obtained by carrying out laser interference.
The focus detection optical system of the displacement detection apparatus according to Japanese Patent Laid-Open No. 2001-76325 determines the origin of the measurement plane by detecting the ratio of the amounts of light incident upon the sensors of the quadripartite sensor. Thus, interference signals are not used.
For this reason, it is difficult to detect position information of the measurement plane at an accuracy of the order of the wavelength.

SUMMARY OF THE INVENTION

The above-identified problems have been taken into consideration to provide an interference measurement apparatus according to embodiments of the present invention. The present invention is capable of setting an origin with high accuracy and measuring displacement (absolute displacement) of an object being measured with high accuracy.
According to a first aspect of the present invention, there is provided an interference measurement apparatus as specified in the claims.
Other features and advantages of the present invention will be apparent from the following description taken in conjunction with the accompanying drawings, in which like reference characters designate the same or similar parts throughout.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the invention, and together with the description, serve to explain the principles of the invention.
Fig. 1 shows schematic views of the optical arrangement of a first embodiment.
Fig. 2 illustrates power spectra of beams LD and SLD according to the first embodiment.
Fig. 3 illustrates the visibility of the beam SLD according to the first embodiment.
Fig. 4 illustrates an output waveform of interference signals UVW from the beam LD according to the first embodiment.
Fig. 5 illustrates A and B phases calculated from the interference signals UVW from the beam LD according to the first embodiment.
Fig. 6 illustrates an output waveform of interference signals U'V'W' from the beam SLD according to the first embodiment.
Fig. 7 illustrates A' and B' phases calculated from the interference signals U'V'W' from the beam SLD according to the first embodiment.
Fig. 8 illustrates A and A' phases and the phase difference of LD and SLD interference signals according to the first embodiment.
Fig. 9 shows schematic views of the optical arrangement of a second embodiment.
Fig. 10 illustrates an output waveform of an interference signal U and an interference signal (U+U') according to the second embodiment.

DESCRIPTION OF THE EMBODIMENTS

First Embodiment

Preferred embodiments of the present invention will be described in detail, by way of example only, in accordance with the accompanying drawings.
According to the embodiments, a low coherence laser beam is multiplexed onto the same optical axis as that of a high coherence laser beam generated by a single mode semiconductor laser. Here, the low coherence beam has a central wavelength moderately different from that of the high coherence laser beam and has a spectral half bandwidth of about 30 nm. An origin is determined on the basis of the phase difference between the interference outputs of the low coherence beam and the high coherence laser beam and intensity information of the interference output of the low coherence beam.
The wavelength of the high coherence laser beam is represented by λ, and the wavelength of the low coherence beam is represented by λ'. The light path length difference of a measurement reflection plane and a reference plane when the phase difference of the interference outputs of the high coherence beam and the low coherence beam is a predetermined value, e.g., zero, is represented by ΔV1.
At this time, the light path length difference can be detected at intervals of ±λ×λ'/(λ-λ') centering around zero within the coherence range of the low coherence beam.
The waveform of the interference output generated by the coherence of the low coherence beam is maximized and is substantially the same as the waveform of the high coherent laser beam in the vicinity of where the light path lengths of the measurement reflection plane and the reference plane are the same.
The position where the light path length difference is zero is detected on the basis of the position where the phase difference of the interference outputs of the high coherence laser beam and the low coherence beam is zero.
A sine wave interference output corresponding to where the light path length difference is zero is determined on the basis of the phase difference of the interference outputs of the high coherence laser beam and the low coherence beam. Then, an origin synchronized with the interference output of the high coherence laser beam is defined.

First Embodiment

Figs. 1A and 1B are a side view and a plan view, respectively, illustrating the main components of a first embodiment of the present invention.
A small interference measurement apparatus according to the first embodiment employs an origin detection unit.
As a high coherence single-mode semiconductor laser beam LD, a distributed feedback (DFB) laser having a stable wavelength λ of 0.78 µm is used.
As a low coherence laser beam (diode laser beam) SLD, a super luminescent diode having spectral half bandwidth of about 10 nm and a central wavelength of about 0.82 µm is used. The spectra of the semiconductor laser beam LD and the diode laser beam SLD are illustrated in Fig. 2. The power spectrum of the semiconductor laser beam LD is an emission line at 0.78 µm. The power spectrum of the diode laser beam SLD has a central wavelength of 0.82 µm and a half bandwidth of about 10 nm.
The laser beams from the semiconductor laser LD and the diode laser SLD are collimated at collimator lenses COL1 and COL2, respectively. The beams are multiplexed to the same optical axis at a dichroic mirror DM1 and are directed through a lens LNS1 and a half mirror NBS. Then, the multiplexed beam is condensed to illuminate a position P1 on the focal plane of a lens LNS2.
From the position P1, the multiplexed beam is directed through the lens LNS2 as a collimated beam having a slightly tilted optical axis. Then, at a polarizing beam splitter (beam splitting unit) PBS, the multiplexed beam is split into two separate beams on the basis of polarization components. One of the beams (i.e., S polarized beam) reflected at the polarizing beam splitter PBS is incident on a reference mirror (reference plane) M1, whereas the other beam (i.e., P polarized beam) transmitted through the polarizing beam splitter PBS is incident on a measurement plane (mirror) M2, which is the surface to be measured.
The beams reflected at the reference mirror M1 and the measurement plane M2 are multiplexed at the polarizing beam splitter PBS and are condensed to illuminate a position P2 on the focal plane of the lens LNS2. Then, this multiplexed beam is returned to its original light path by a reflective film M0 provided in the vicinity of the position P2. The multiplexed beam from the position P2 is directed through the lens LNS2 as a collimated beam and is split into two separate beams at the polarizing beam splitter PBS. One of the beams (i.e., S polarized beam) reflected at the polarizing beam splitter PBS illuminates the reference mirror M1. The other beam (i.e., P polarized beam) transmitted through the polarizing beam splitter PBS illuminates the measurement plane (mirror) M2.
The beams reflected at the reference mirror M1 and the measurement plane M2 are multiplex at the polarizing beam splitter PBS and are condensed to illuminate the position P1 on the focal plane on the lens LNS2.
Subsequently, the beam is transmitted toward the side of the light source. Here, the S polarized beam is reciprocated between the reference mirror M1 and the polarizing beam splitter PBS twice, whereas the P polarized beam is reciprocated between the measurement plane M2 and the polarizing beam splitter PBS twice. These beams are transmitted toward the side of the light-receiving system via a non-polarizing beam splitter (half mirror) NBS. Then, each beam is transmitted through a quarter wave plate QWP so as to be converted into a linearly polarized beam in which the polarization direction is rotated in accordance with the change in phase difference.
The beam is transmitted through a condenser lens CON and an aperture stop AP and then split into three beams at a beam splitter GBS to separate laser beams LD (first beams) and laser beams SLD (second beams). The beams LD are transmitted through a dichroic mirror DM2 having the same structure as that of the dichroic mirror DM1, whereas the beams SLD are reflected at the dichroic mirror DM2. To separate the beams LD (first beams) and the beams SLD (second beams), the beams split into three beams are transmitted through a condenser lens CON and an aperture stop AP to a dichroic mirror DM2, having the same structure as that of the dichroic mirror DM1. At the dichroic mirror DM2, the beam LD and the beams SLD are separated by transmitting the beam LD and reflecting the beams SLD. The three beams LD transmitted through the dichroic mirror DM2 and the three beams SLD reflected from the dichroic mirror DM2 are transmitted through polarizing element arrays 3CH-POL and 3CH-POL', respectively. The polarizing elements of the polarizing element arrays 3CH-POL and 3CH-POL' have polarization axes different by 60° from each other. The three beams LD and the three beams SLD are incident on the three elements of the polarizing element arrays 3CH-POL and 3CH-POL', respectively, and are incident on the light-receiving parts of tripartition light-receiving elements PDA and PDA', respectively. In this way, interference signals UVW and U'V'W' are detected. The phases of the three interference signals UVW and the phases of the three interference signals U'V'W' in accordance with the out-of-plane displacement of the measurement plane (mirror) M2 are different by 120°.
At calculation unit SPC, A phase and B phase having phases different by 90° are calculated by the interference signals UVW, and A' phase and B' phase having phases different by 90° are calculated by the interference signals U'V'W'. The phase θ of the interference beam LD is determined by tan^-1(B/A), whereas the phase θ' of the beam SLD is determined by tan^-1(B'/A'). The phase difference Δθ=θ-θ' of the phase θ of the interference beam LD and the phase θ' of the beam SLD is zero when the light path lengths of the measurement plane M2 and the reference mirror M1 are equal.
When the light path length is increased, the phase difference Δθ=θ-θ' of the interference beam LD and the beam SLD is linearly increased to 2π, i.e., is returned to zero.
It can be determined that the light path lengths of the measurement plane M2 and the reference mirror M1 are not equal on the basis of the attenuation of the output of the beam SLD. Therefore, the origin can be set at a position where the light path lengths of the measurement plane M2 and the reference mirror M1 are equal.
The members provided in the light paths from the measurement plane M2 and the reference mirror M1 to the light-receiving elements PD2 and PDA constitute an element in the interference unit.
The embodiment will be described in detail below with reference to Fig. 2.
Fig. 2 illustrates power spectra of the beam LD from a semiconductor laser LD and the beam SLD from a diode SLD.
The power spectrum of the beam LD from the semiconductor laser LD is an emission line at 0.78 µm. The power spectrum of the beam SLD from the diode SLD is similar to a Lorentz type power spectrum in which the central wavelength is 0.82 µm and the half bandwidth is 10 nm. A power spectrum S(Δλ) corresponding to the wavelength difference Δλ from the central wavelength 0.82 µm of the beam SLD is represented by the following expression: $S (Δ λ) = (Δ Λ / 2) 2 / \{Δ λ 2 + (Δ Λ / 2) 2\}$

where, ΔΛ represents the half bandwidth, which is 10 nm in this case.
Based on Fig. 2, the dichroic mirrors DM1 and DM2 are set to have boundaries of transmission and reflection characteristics around 0.8 µm. Accordingly, the dichroic mirror DM1 is capable of multiplexing beams and the dichroic mirror DM2 is capable of splitting a beam.
The interference signals UVW obtained from the beam LD from the semiconductor laser LD have sufficiently high coherence.
The coherence and the visibility V (ΔV1) of the interference signals U'V'W' obtained from the beam SLD from the diode SLD can be approximated by applying the following expression that is derived by carrying out inverse Fourier transformation to expression 1: $V (Δ V 1) = Exp \{- π Δ Λ / λ 2\} Δ V 1$

where, λ represents the central wavelength of the beam SLD, which is 0.82 µm in this case, and ΔV1 represents the light path length difference.
Fig. 3 illustrates the relationship between the light path length difference ΔV1 and the visibility V.
Next, the polarization directions of the polarizing element 3CH-POL-1 of the polarizing element array 3CH-POL corresponding to the U output of the beam LD and the polarizing element 3CH-POL-1' of the polarizing element array 3CH-POL' corresponding to the U' output of the beam SLD are considered. The polarization direction is set to the direction in which a peak value is obtained when the difference of the light paths to the measurement plane M2 and the reference mirror M1 is equal to a predetermined value, e.g., zero. In this way, the U wave and the A phase of the beam LD are cosine waves with origins set at positions where the light path difference of the reference mirror M1 and the measurement plane M2 is zero, whereas the B phase is a sine wave.
The U' output and the A' phase of the beam SLD are cosine waves with origins set at positions where the light paths to the reference mirror M1 and the measurement plane M2 are equal and where the cosine wave attenuates as the distance becomes further away from the origin. The B' phase is a sine wave.
Fig. 4 illustrates ideal interference signals UVW generated from the beam LD from the semiconductor laser LD having nearly equal light paths.
Fig. 5 illustrates the A and B phases having phases that are obtained by the expressions A=2/3×{U-(V+W)/2} and B=1/√3×(V-W), respectively, and being different by 90°.
Fig. 6 illustrates ideal interference signal U'V'W' from the beam SLD from the diode SLD. Fig. 7 illustrates the A' and B' phases having phases that are obtained by the expressions A'={U'-(V'+W')/2} and B'=1/√3×(V'-W'), respectively and being different by 90°.
The horizontal axis represents the light path difference of the measurement plane M2 and the reference mirror M1. Since the beams are reciprocated two times, the displacement of the measurement plane M2 is 1/4.
The phase θ of the beam LD is obtained from tan^-1(B/A), whereas the phase θ' of the beam SLD is obtained from tan^-1(B'/A').
The phase difference Δθ=θ-θ' of the phase θ of the beam LD and the phase θ' of the beam SLD is zero when the light paths to the measurement plane M2 and the reference mirror M1 are equal and changes linearly with respect to the light path difference of the measurement plane M2 and the reference mirror M1. Fig. 8 illustrates the A phase of the beam LD, the A' phase of the beam SLD, and the phase difference Δθ=θ-θ', which is set to zero about every 16 seconds (which are the points indicated by the upward arrows in the drawing).
The visibility of the output of the beam SLD at this time is calculated by the following expression: $\sqrt{{A^{'}}^{2} + {B^{'}}^{2}}$

As shown in the drawing, it can be determined that the measurement plane M2 and the reference mirror M1 do not have equal light paths on the basis of the attenuation of the output of the beam SLD. Therefore, the position where the light paths to the measurement plane M2 and the reference mirror M1 are equal can be detected.
The wavelength 0.78 µm corresponds to 2π×0.78/16≈0.3 deg for the phase difference Δθ of the beam LD and the beam SLD. Thus, if the phase difference Δθ of the beam LD and the beam SLD is measured at ±0.15 deg or smaller, the waveform for one cycle of the beam LD at an equal light path position can be determined.
In this way, the origin can be defined in synchronization with the interference signal from the beam LD.
The 90°-different A and B phases of the interference signals UVW from the semiconductor laser LD are based on the principle of an interferometric measurement by a double reciprocal light path. Therefore, interference signals are sine wave signals having a signal period of 1/4 of the wavelength of the interference signal U from the semiconductor laser LD. When a laser diode SLD having a wavelength of 0.78 µm is used, a sine wave signal having a period of 0.195 µm is obtained. The wave number is counted and the phase is calculated by tan^-1(B/A) to detect the relative displacement with a resolution of the order of nanometers.
By resetting the counted wave number when a zero light path difference is detected, as described above, from the phase difference of the beam LD and the beam SLD and the interference (visibility) of the beam SLD and the absolute value of the origin can be measured on the order of nanometers.
As described above, according to this embodiment, a first interference signal (period signal) related to distance information of the measurement plane M2 is generated from the beams LD at the interference unit.
Furthermore, a second interference signal that has maximum amplitude when the distances to the measurement plane M2 and the reference mirror M1 are equal and has amplitude that attenuates in response to the distance is generated at the beams SLD.
Absolute displacement information is obtained by determining a measurement origin at a position where the measurement plane M2 and the reference mirror M1 are equal light paths on the basis of the intensity of interference of the second interference signal and a position where the phase difference of the first and second interference signals is a predetermined value, e.g., zero.

Second Embodiment

Fig. 9 illustrates a schematic view of the main components of a second embodiment of the present invention.
The differences of the second embodiment and the first embodiment are listed below.
(a) The semiconductor laser LD and the diode SLD are alternately turned on and off while the origin is being detected.
(b) The polarization element array 3CH-POL and the tripartition light-receiving elements PDA are included in both the SLD light-receiving system and the LD light-receiving system for receiving the interference signal from the semiconductor laser LD.
The interference signals UVW from the beam LD and the interference signals U'V'W' from the beam SLD are sampled and separated at a signal processing unit SPC in accordance with illumination. While the interference signals are not emitted, interpolation and estimation are carried out to obtain the interference signals UVW from the LD and the interference signals U'V'W' continuously.
(c) The signals do not have to be separated by wavelength.
The origin is defined in synchronization with the interference signals from the beam LD, in the same manner as the first embodiment, on the basis of the interference signals U'V'W' from the beam SLD and the interference signals UVW from the beam LD obtained as described above.
According to the second embodiment, since sampling is carried out in time series by turning on and off the diode SLD when detecting the origin, the movement of the measurement plane M2 has to be sufficiently faster than the sampling frequency.
However, in general, the movement of the measurement plane M2 is slower than the electric sampling so long as the movement of the measurement plane M2 is a mechanical movement. Thus, detection of the origin is easy.

Third Embodiment

The structure according to a third embodiment of the present invention is substantially the same as that illustrated in Fig. 9.
According to the third embodiment, instead of alternately turning on and off the driving of the semiconductor laser LD and the diode SLD when the origin is being detected, the semiconductor laser LD is constantly turned on.
The semiconductor laser LD is matched with the on and off of the driving of the diode SLD.
For example, the interference signals UVW from the beam LD is obtained when the diode SLD is turned off.
When the diode SLD is turned on, a signal obtained by superimposing the interference signals UVW from the semiconductor laser LD and the interference signals U'V'W' from the diode SLD is sampled and separated at the signal processing unit SPC. Interpolation and estimation is carried out on the interference signals to obtain continuous interference signals UVW and a signal obtained by superimposing the interference signals U'V'W' on the interference signals UVW.
Fig. 10 illustrates the waveforms of the signal U of the continuous interference signals UVW obtained by interpolation and estimation and the signal (U+U') of the interference signal obtained by superimposing the interference signals U'V'W' on the interference signals UVW near a position where the light path from the polarizing beam splitting unit PBS to the measurement plane M2 and the reference mirror M1 are equal.
The interference signals U'V'W' is obtained by carrying out subtraction on the interference signal in which the interference signals U'V'W' are superimposed to the interference signals UVW. The origin is defined in synchronization with the interference signals from the beam LD in the same manner as the first embodiment from the interference signals U'V'W' from the beam SLD and the interference signals UVW from the beam LD obtained as described above.
According to the third embodiment, the semiconductor laser LD is constantly illuminated. However, instead, the diode SLD may be constantly illuminated, and the semiconductor laser LD may be turned on and off.
It is desirable to maintain the temperature of the semiconductor laser LD so as to stabilize the laser oscillation.
However, if the semiconductor laser device is turned on and off, the temperature of the light-emitting unit of the semiconductor laser device changes due to thermal resistance of the semiconductor laser device when turned on. Thus, the single-mode laser oscillation may be unstable. Therefore, as described in the third embodiment, it is desirable to constantly illuminate the semiconductor laser LD.
As described above, according to the third embodiment, two different light sources are alternately turned on and off.
In accordance with the illumination of the beams LD and SLD, the interference beams are received by the light-receiving unit. The waveforms of the interference signals are interpolated and estimated on the basis of the beams LD and SLD received at the light-receiving unit. In this way, a measurement origin is defined at a position where the light path lengths from the measurement plane M2 and the reference mirror M1 to the polarizing beam splitter PBS are equal.
Instead, only one of the two light sources (first and second light sources) may be turned on and off. In such a case, an interference beam is detected from a beam from the first light sources while the second light source is turned off. An interference beam having a signal obtained by superimposing the interference signal from the beam SLD to the interference signal from the beam LD is received at the light-receiving unit while the second light source is turned on.
The waveform of the interference signal based on a beam from the first or second light source, whichever is being turned on, is interpolated and estimated.
In this way, the measurement origin is defined at a position where the light path lengths from the measurement plane M2 and the reference mirror M1 to the polarizing beam splitter PBS are equal.
According to the embodiments described above, the super luminescent diode SLD is used as a light source of the low coherence interference beam. The power spectrum of this beam is similar to a Lorentz type power spectrum but is not exactly the same. Therefore, in such a case, the visibility and the envelope curves of the interference signals U'V'W' are also different.
However, the greater the half bandwidth of the power spectrum is, the greater the peak of the origin (i.e., peak amplitude) is compared to the adjacent peak. Thus, detection is easier, whereas detection is more difficult when the half bandwidth of the power spectrum is small.
If the power spectra of the high coherence beam and the low coherence beam are similar, the light path difference when the phase difference ΔVθ of the interference signal of the high coherence beam and the interference signal of the low coherence beam is zero becomes great. Thus, detection becomes easy at the visibility of the low coherence beam.
However, the change in the phase difference ΔVθ with respect to the light path difference becomes small, and, thus, determining a one cycle waveform of the interference signal of the low coherence beam at the origin becomes difficult. It is necessary that the phase difference ΔVθ of the interference signal of the high coherence beam and the interference signal of the low coherence beam is zero when the light paths to the reference mirror M1 and the measurement plane M2 are equal and that the one cycle waveform of the interference signal of the low coherence beam at the point can be detected.
According to the embodiments described above, a dichroic mirror is used to multiplex the high coherence interference beam and the low coherence interference beam. However, a half mirror may be used for convenience although the light efficiency is lower.
As a small light source for the low coherence interference beam, a current constriction type point light source light-emitting diode may also be used although the directionality is wide and the use efficiency of light is low.
The embodiments may also be applied to a gas laser interference measurement apparatus using a mirror or a corner cube for the object to be measured. As a light source of a low coherence beam, a xenon lamp or a white point light source constituting a pin hole may also be used.
Instead of the DFB laser diode, a single mode surface-emitting semiconductor laser, e.g., a vertical cavity surface-emitting laser (VCSEL), controlled at a constant temperature or a gas laser, such as a helium-neon (He-Ne) laser, may be used.
According to the above-described embodiments, the origin can be defined at a resolution of the order of nanometers in synchronization with an output sine wave of laser interference.
Accordingly, it is easy to obtain absolute position information at a resolution on the order of nanometers. [00106] While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The scope of the following claims is to be accorded the broadest interpretation so as to encompass all modifications, equivalent structures and functions.

Claims

An interference measurement apparatus comprising:
a first light source (LD) configured to emit a first beam having high coherence;

a second light source (SLD) configured to emit a second beam having low coherence, the second beam having a central wavelength difference from the central wavelength of the first beam;

a multiplexing unit (DM) configured to multiplex the first beam and the second beam onto the same optical axis to obtain a first multiplexed beam;

a beam splitting unit (PBS) configured to split the first multiplexed beam from the multiplexing unit into a first split beam and a second split beam;

an interference unit configured to direct the first split beam obtained at the beam splitting unit to a measurement reflection plane of an object to be measured, direct the third multiplexed beam obtained at the beam splitting unit to a reference surface, then, multiplex the first split beam reflected from the reflection plane and the second split beam reflected from the reference surface, the interference unit allowing the first beam of the first split beam and the first beam of the second split beam to interfere with each other, and the second beam of the first split beam and the second beam of the second split beam to interfere with each other; and

a calculation unit (SPC) configured to generate a first interference signal (U'V'W') obtained from the first beams at the interference unit, the first interference signal relating to information on the distance to the measurement reflection plane, and a second interference signal (UVW) obtained from the second beams and to determine the position of a measurement origin for the measurement reflection plane by using the interference intensity of the second interference signal and the phase difference of the first and second interference signals.
The interference measurement apparatus according to Claim 1, wherein the measurement origin is set at a position where the phase difference of the first and second interference signals is zero.
The interference measurement apparatus according to Claim 1 or 2, wherein,
the amplitude of the second interference signal is maximized when distances to the measurement reflection plane and the reference plane are the same, and
the amplitude of the second interference signal attenuates in accordance with the distances.
The interference measurement apparatus according to any preceding claim, wherein,
the interference unit includes,
a first light-receiving unit (PDA) configured to detect a first interference signal (U'V'W') obtained from the first beams at the interference unit, the first interference signal relating to information on the distance to the measurement reflection plane, and
a second light-receiving unit (PD2) configured to detect a second interference signal (UVW) obtained from the second beams, the amplitude of the second beams being maximized when distances to the measurement reflection plane and the reference plane are the same and attenuating in accordance with the distances, and
the calculation unit is capable of carrying out calculations for determining the position where the light path lengths of the measurement reflection plane and the reference plane are equal as the position of a measurement origin for displacement information on the basis of intensity information of the interference signal obtained at the second light-receiving unit and the position where the phase difference of the first and second interference signals is zero.
The interference measurement apparatus according to any preceding claim, wherein,
the beam splitting unit includes a polarization beam splitter,
the beam splitting unit splits the first multiplexed beam into to a first linearly polarized beam and a second linearly polarized beam at the polarization beam splitter, the first and second linearly polarized beams being orthogonal to each other,
the beam splitting unit directs the first polarized beam to the measurement reflection plane so that the first polarized beam is reflected,
the beam splitting unit directs the second polarized beam to the reference plane so that the second polarized beam is reflected,
the beam splitting unit multiplexes the reflected first and second polarized beams at the polarization beam splitter to obtain a second multiplexed beam,
the beam splitting unit converts the second multiplexed beam into a third linearly polarized beam by transmitting the second multiplexed beam through a quarter wave plate, the polarization direction of the third linearly polarized beam being rotated in accordance with the change in the light path length difference of the reflected first and second polarized beams,
the beam splitting unit generates a first periodic signal on the basis of a first interference beam obtained from the first beams, the first periodic signal relating to information on the distance to the measurement reflection plane,
the beam splitting unit generates a second periodic signal on the basis of a second interference beam obtained from the second beams, the amplitude of the second beams being maximized when distances from the beam splitting unit to the measurement reflection plane and the reference plane are equal and attenuating in accordance with the distances, and
the beam splitting unit determines the position where the light path lengths of the measurement reflection plane and the reference plane are equal is set as the position of an origin on the basis of interference intensity of the second interference beam obtained from the second beams and the position where the phase difference of the first and second periodic signals is zero.
The interference measurement apparatus according to any preceding claim, wherein the central wave lengths of the first beams and the second beams are different.
The interference measurement apparatus according to Claim 1, wherein the position where the light path lengths from the light splitting unit to the measurement reflection plane and the reference plane are equal is set as the position of a measurement origin for displacement information by alternately turning on and off the illumination of the first and second light sources, receiving the first and second interference signals at a light receiving unit in accordance with the illumination of the first and second beams, and interpolating and estimating the waveform of the first and second interference signals obtained from the first and second beams.
The interference measurement apparatus according to Claim 1, wherein the position where the light path lengths from the light splitting unit to the measurement reflection plane and the reference plane are equal is set as the position of a measurement origin for displacement information by turning on and off one of the first and second light sources, detecting an interference beam obtained from the turned-on light source while the other light source is turned off, receiving an interference wave having waveform corresponding to a waveform of a signal obtained by superimposing the second interference signal obtained from the second beam onto the first interference signals obtained from the first beam in accordance with the illumination of the turned-off light source, and interpolating and estimating the waveform of one of the beams obtained from one of the first and second light sources being turned on and off.