EP1748496A3 - Light emitting semiconductor chip - Google Patents

Light emitting semiconductor chip Download PDF

Info

Publication number
EP1748496A3
EP1748496A3 EP06014455A EP06014455A EP1748496A3 EP 1748496 A3 EP1748496 A3 EP 1748496A3 EP 06014455 A EP06014455 A EP 06014455A EP 06014455 A EP06014455 A EP 06014455A EP 1748496 A3 EP1748496 A3 EP 1748496A3
Authority
EP
European Patent Office
Prior art keywords
semiconductor chip
light emitting
emitting semiconductor
semiconductor body
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP06014455A
Other languages
German (de)
French (fr)
Other versions
EP1748496A2 (en
EP1748496B1 (en
Inventor
Matthias Peter
Uwe Strauss
Matthias Sabathil
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of EP1748496A2 publication Critical patent/EP1748496A2/en
Publication of EP1748496A3 publication Critical patent/EP1748496A3/en
Application granted granted Critical
Publication of EP1748496B1 publication Critical patent/EP1748496B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Abstract

Es wird ein strahlungsemittierender Halbleiterchip angegeben, der einen Halbleiterkörper (3) mit einem n-leitenden (4) und einem p-leitenden Bereich (5) umfasst, wobei der Halbleiterkörper eine Löcher-Barriereschicht (7) aufweist, die ein Material aus dem Materialsystem InyGa1-x-yAlxN enthält.

Figure imgaf001
The invention relates to a radiation-emitting semiconductor chip comprising a semiconductor body (3) with an n-type (4) and a p-type region (5), the semiconductor body having a hole-barrier layer (7) comprising a material from the material system In y Ga 1-xy Al x N contains.
Figure imgaf001
EP06014455.7A 2005-07-29 2006-07-12 Light emitting semiconductor chip Active EP1748496B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005035721 2005-07-29
DE102005048196.5A DE102005048196B4 (en) 2005-07-29 2005-10-07 Radiation-emitting semiconductor chip

Publications (3)

Publication Number Publication Date
EP1748496A2 EP1748496A2 (en) 2007-01-31
EP1748496A3 true EP1748496A3 (en) 2011-04-20
EP1748496B1 EP1748496B1 (en) 2019-04-24

Family

ID=36790894

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06014455.7A Active EP1748496B1 (en) 2005-07-29 2006-07-12 Light emitting semiconductor chip

Country Status (4)

Country Link
US (1) US7791081B2 (en)
EP (1) EP1748496B1 (en)
JP (1) JP2007043151A (en)
DE (1) DE102005048196B4 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1569263B1 (en) * 2004-02-27 2011-11-23 OSRAM Opto Semiconductors GmbH Method for joining two wafers
DE102007031926A1 (en) * 2007-07-09 2009-01-15 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor body
DE102007058952A1 (en) * 2007-09-24 2009-04-09 Osram Opto Semiconductors Gmbh Optoelectronic component
CN103003961B (en) 2010-04-30 2015-11-25 波士顿大学理事会 There is the effective UV light-emitting diode of band structure potential fluctuation
US8379684B1 (en) * 2011-08-16 2013-02-19 Corning Incorporated Hole blocking layers in non-polar and semi-polar green light emitting devices
JP5737096B2 (en) * 2011-09-13 2015-06-17 豊田合成株式会社 Group III nitride semiconductor light emitting device
TW201347233A (en) * 2012-05-08 2013-11-16 Phostek Inc Light-emitting diode device and a method of manufacturing the same
US11063179B2 (en) 2015-06-05 2021-07-13 Ostendo Technologies, Inc. Light emitting structures with selective carrier injection into multiple active layers
JPWO2017119365A1 (en) * 2016-01-08 2018-11-01 ソニー株式会社 Semiconductor light emitting device, display device and electronic apparatus
JP6399011B2 (en) * 2016-02-09 2018-10-03 日亜化学工業株式会社 Light source device
DE102016109022B4 (en) 2016-05-17 2021-02-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laser diode chip

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5889295A (en) * 1996-02-26 1999-03-30 Kabushiki Kaisha Toshiba Semiconductor device
GB2352326A (en) * 1999-05-28 2001-01-24 Arima Optoelectronics Corp aN LED based on a two well system with charge asymmetric resonance tunnelling
US20030001170A1 (en) * 2001-06-07 2003-01-02 Naoki Shibata Group III nitride compound semiconductor light-emitting element
US20040101012A1 (en) * 1995-11-06 2004-05-27 Nichia Corporation Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor
EP1453160A1 (en) * 2001-11-05 2004-09-01 Nichia Corporation Semiconductor element

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63252492A (en) * 1987-04-09 1988-10-19 Hikari Gijutsu Kenkyu Kaihatsu Kk Semiconductor light-emitting element
EP0575684A1 (en) * 1992-06-22 1993-12-29 International Business Machines Corporation Decoupled optic and electronic confinement laser diode
JPH06209139A (en) * 1993-01-11 1994-07-26 Fujitsu Ltd Semiconductor laser
JP3658112B2 (en) * 1995-11-06 2005-06-08 日亜化学工業株式会社 Nitride semiconductor laser diode
JPH1056236A (en) * 1996-08-08 1998-02-24 Toyoda Gosei Co Ltd Group iii nitride semiconductor laser element
GB2327145A (en) * 1997-07-10 1999-01-13 Sharp Kk Graded layers in an optoelectronic semiconductor device
TW412889B (en) * 1997-09-24 2000-11-21 Nippon Oxygen Co Ltd Semiconductor laser
JP4161603B2 (en) * 2001-03-28 2008-10-08 日亜化学工業株式会社 Nitride semiconductor device
JP3645233B2 (en) * 2001-06-07 2005-05-11 日本電信電話株式会社 Semiconductor element
TW567618B (en) 2002-07-15 2003-12-21 Epistar Corp Light emitting diode with adhesive reflection layer and manufacturing method thereof
US7700940B2 (en) * 2002-07-16 2010-04-20 Nitride Semiconductor Co., Ltd. Gallium nitride-based compound semiconductor device
JP2004111514A (en) * 2002-09-17 2004-04-08 Sanyo Electric Co Ltd Nitride semiconductor light emitting element and its manufacturing method
JP2007504682A (en) 2003-05-09 2007-03-01 クリー　インコーポレイテッド III-nitride electronic device structure with high Al content AlGaN diffusion barrier
GB2407701A (en) * 2003-10-28 2005-05-04 Sharp Kk Manufacture of a semiconductor light-emitting device
KR100565894B1 (en) * 2005-07-06 2006-03-31 (주)룩셀런트 Method of controlling active layer of iii-nitride semiconductor light emitting device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040101012A1 (en) * 1995-11-06 2004-05-27 Nichia Corporation Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor
US5889295A (en) * 1996-02-26 1999-03-30 Kabushiki Kaisha Toshiba Semiconductor device
GB2352326A (en) * 1999-05-28 2001-01-24 Arima Optoelectronics Corp aN LED based on a two well system with charge asymmetric resonance tunnelling
US20030001170A1 (en) * 2001-06-07 2003-01-02 Naoki Shibata Group III nitride compound semiconductor light-emitting element
EP1453160A1 (en) * 2001-11-05 2004-09-01 Nichia Corporation Semiconductor element

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KIM T G ET AL: "Structure optimization of InGaN-GaN ultraviolet light-emitting diode with a low-energy electron injection mechanism", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 272, no. 1-4, 10 December 2004 (2004-12-10), pages 264 - 269, XP004658481, ISSN: 0022-0248, DOI: 10.1016/J.JCRYSGRO.2004.08.100 *

Also Published As

Publication number Publication date
DE102005048196B4 (en) 2023-01-26
EP1748496A2 (en) 2007-01-31
JP2007043151A (en) 2007-02-15
US20100181583A1 (en) 2010-07-22
EP1748496B1 (en) 2019-04-24
US7791081B2 (en) 2010-09-07
DE102005048196A1 (en) 2007-02-01

Similar Documents

Publication Publication Date Title
EP1748496A3 (en) Light emitting semiconductor chip
DE102007058720B4 (en) Reflexive mounting substrates for LEDs
EP2161752A3 (en) Light-emitting device and method of manufacturing the same
TW200701529A (en) Light emitting diode of a nanorod array structure having a nitride-based multi quantum well
EP2642536A3 (en) White light emitting diode
EP1560275A3 (en) Semiconductor light emitting devices including current spreading layers
EP1592076A3 (en) Optoelectronic device with several current spreading layers and its method of fabrication
WO2005094271A3 (en) Colloidal quantum dot light emitting diodes
JP2010016409A5 (en)
WO2008078297A3 (en) Semiconductor light emitting device configured to emit multiple wavelengths of light
EP2224466A3 (en) High power AllnGaN based multi-chip light emitting diode
WO2008129963A1 (en) Semiconductor light-emitting device and method for manufacturing the same
EP1976031A3 (en) Light emitting diode having well and/or barrier layers with superlattice structure
TW200514279A (en) Semiconductor light-emitting element and manufacturing method, integrated semiconductor light-emitting device and manufacturing method, image display and manufacturing method, and illuminating device and manufacturing method
WO2009120990A3 (en) Ultraviolet light emitting diode/laser diode with nested superlattice
RU2011116095A (en) SEMICONDUCTOR LIGHT-RADIATING DEVICES GROWED ON COMPOSITE SUBSTRATES
TW200703713A (en) White light emitting device
JP2007281257A5 (en)
EP1643554A3 (en) Light emitting diode assembly
WO2005081750A3 (en) Group iii-nitride based led having a transparent current spreading layer
TW200637035A (en) Flip chip type nitride semiconductor light emitting device
EP2709172A3 (en) Light emitting device
EP2101363A3 (en) Semiconductor light-emitting element and method for producing the same
EP1734590A3 (en) Light-Emitting device
TW200731567A (en) Production method for nitride semiconductor light emitting device

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA HR MK YU

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: OSRAM OPTO SEMICONDUCTORS GMBH

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: OSRAM OPTO SEMICONDUCTORS GMBH

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

REG Reference to a national code

Ref country code: DE

Ref legal event code: R079

Free format text: PREVIOUS MAIN CLASS: H01L0033000000

Ipc: H01L0033040000

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA HR MK RS

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 33/04 20100101AFI20110311BHEP

17P Request for examination filed

Effective date: 20111020

AKX Designation fees paid

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

17Q First examination report despatched

Effective date: 20160115

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 33/14 20100101AFI20180425BHEP

Ipc: H01L 33/12 20100101ALI20180425BHEP

Ipc: H01L 33/32 20100101ALN20180425BHEP

Ipc: H01L 33/04 20100101ALI20180425BHEP

Ipc: H01L 33/02 20100101ALN20180425BHEP

Ipc: H01S 5/323 20060101ALN20180425BHEP

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

INTG Intention to grant announced

Effective date: 20180628

RIN1 Information on inventor provided before grant (corrected)

Inventor name: PETER, MATTHIAS

Inventor name: STRAUSS, UWE

Inventor name: SABATHIL, MATTHIAS

GRAJ Information related to disapproval of communication of intention to grant by the applicant or resumption of examination proceedings by the epo deleted

Free format text: ORIGINAL CODE: EPIDOSDIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

REG Reference to a national code

Ref country code: DE

Ref legal event code: R079

Ref document number: 502006016234

Country of ref document: DE

Free format text: PREVIOUS MAIN CLASS: H01L0033040000

Ipc: H01L0033140000

INTC Intention to grant announced (deleted)
RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 33/12 20070131ALI20181108BHEP

Ipc: H01L 33/32 20070131ALN20181108BHEP

Ipc: H01S 5/323 20060101ALN20181108BHEP

Ipc: H01L 33/02 20070131ALN20181108BHEP

Ipc: H01L 33/04 20070131ALI20181108BHEP

Ipc: H01L 33/14 20070131AFI20181108BHEP

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 33/32 20100101ALN20181108BHEP

Ipc: H01L 33/14 20100101AFI20181108BHEP

Ipc: H01S 5/323 20060101ALN20181108BHEP

Ipc: H01L 33/02 20100101ALN20181108BHEP

Ipc: H01L 33/04 20100101ALI20181108BHEP

Ipc: H01L 33/12 20100101ALI20181108BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

INTG Intention to grant announced

Effective date: 20190103

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 33/12 20100101ALI20181108BHEP

Ipc: H01S 5/323 20060101ALN20181108BHEP

Ipc: H01L 33/14 20100101AFI20181108BHEP

Ipc: H01L 33/02 20100101ALN20181108BHEP

Ipc: H01L 33/04 20100101ALI20181108BHEP

Ipc: H01L 33/32 20100101ALN20181108BHEP

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE PATENT HAS BEEN GRANTED

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

Free format text: NOT ENGLISH

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 1125171

Country of ref document: AT

Kind code of ref document: T

Effective date: 20190515

Ref country code: IE

Ref legal event code: FG4D

Free format text: LANGUAGE OF EP DOCUMENT: GERMAN

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 502006016234

Country of ref document: DE

REG Reference to a national code

Ref country code: NL

Ref legal event code: MP

Effective date: 20190424

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG4D

RAP2 Party data changed (patent owner data changed or rights of a patent transferred)

Owner name: OSRAM OPTO SEMICONDUCTORS GMBH

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190424

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190424

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190424

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190824

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190424

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190424

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190424

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190725

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190424

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190724

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190824

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 502006016234

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190424

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190424

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190424

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190424

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190424

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190424

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190424

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20190724

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190424

26N No opposition filed

Effective date: 20200127

REG Reference to a national code

Ref country code: BE

Ref legal event code: MM

Effective date: 20190731

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20190724

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20190731

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20190712

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190424

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20190731

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20190731

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20190731

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20190712

REG Reference to a national code

Ref country code: AT

Ref legal event code: MM01

Ref document number: 1125171

Country of ref document: AT

Kind code of ref document: T

Effective date: 20190712

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20190712

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190424

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: HU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO

Effective date: 20060712

P01 Opt-out of the competence of the unified patent court (upc) registered

Effective date: 20230825

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20230719

Year of fee payment: 18